• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.1
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• pp.8-22
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• 2014

In the past few decades, CMOS logic technologies and devices have been successfully developed with the steady miniaturization of the feature size. At the sub-30-nm CMOS technology nodes, one of the main hurdles for continuously and successfully scaling down CMOS devices is the parametric failure caused by random variations such as line edge roughness (LER), random dopant fluctuation (RDF), and work-function variation (WFV). The characteristics of each random variation source and its effect on advanced device structures such as multigate and ultra-thin-body devices (vs. conventional planar bulk MOSFET) are discussed in detail. Further, suggested are suppression methods for the LER-, RDF-, and WFV-induced threshold voltage (VTH) variations in advanced CMOS logic technologies including the double-patterning and double-etching (2P2E) technique and in advanced device structures including the fully depleted silicon-on-insulator (FD-SOI) MOSFET and FinFET/tri-gate MOSFET at the sub-30-nm nodes. The segmented-channel MOSFET (SegFET) and junctionless transistor (JLT) that can suppress the random variations and the SegFET-/JLT-based static random access memory (SRAM) cell that enhance the read and write margins at a time, though generally with a trade-off between the read and the write margins, are introduced.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.2
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• pp.7-14
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• 2010

This paper describes the effects of kinetic parameters such as attaching speed, attaching time, and dettaching speed on printing property of electrodes which were fabricated by micro-contact printing with Ag ink. In inking process the attaching speed was preferable to be less than 1 mm/s, attaching time as short as possible, and detaching speed larger than 1000 mm/s in order to obtain the transfer ratio of ink larger than 98%. Meanwhile in printing process the parameters were totally opposite to the results of inking process; attaching speed larger than 100 mm/s, attaching time larger than 30 sec, and detaching speed less than 1 mm/s for the best results. With the parameters we could obtain the micro-contact printed electrodes with the minimum line width of $30\;{\mu}m$, thickness of 300~500 nm, roughness less than 50 nm, and resistivity of about $15{\sim}16{\mu\Omega\cdot}cm$.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.6
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• pp.7-14
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• 2011

This paper is related to a roll-type micro-contact printing process. The proper parameters such as coating velocity, inking velocity, printing velocity and printing pressure as well as Ag contents of Ag ink were extracted to perform the fine patterning of Ag electrodes. Additionally we developed a process for PDMS with high uniform thickness. Finally, we obtained the Ag fine electrodes on $4.5cm\;{\times}\;4.5cm$ plastic substrate with the line width of 10 um, thickness less than 300 nm, surface roughness less than 40 nm, and the specific resistance of $2.08\;{\times}\;10^{-5}{\Omega}{\cdot}cm$.

• Journal of the Mineralogical Society of Korea
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• v.22 no.4
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• pp.353-358
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• 2009

The ability of natural abrasives which were recovered from CRT glass polishing process was evaluated. Comparing the center line average roughness values of a glass polished with new pumice (Ra = $0.039{\mu}m$) and with new garnet (Ra = $0.031{\mu}m$), the glass surface polished with the recycled pumice and the garnet had less pits on the surface with smaller Ra values (Ra = $0.025{\mu}m$ for recycled pumice and Ra = 0.029 for recycled garnet). Recycled rouge contains amorphous glass fragments so that it should be used as a cement replacement rather than recycle into an abrasive. Nnatural abrasives, pumice and garnet powder, which are used in CRT glass polishing process can be recycled into abrasives so that it can help to minimize costs and environmental impact from the production of abrasives and the disposal of waste sludge.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.45-45
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• 2007

Capacitors among the embedded passive components are most widely studied because they are the major components in terms of size and number and hard to embed compared with resistors and inductors due to the more complicated structure. To fabricate a capacitor-embedded PCB for in-line process, it is essential to adopt a low temperature process (<$200^{\circ}C$). However, high dielectric materials such as ferroelectrics show a low permittivity and a high dielectric loss when they are processed at low temperatures. To solve these contradicting problems, we studied BMN materials as a candidate for dielectric capacitors. processed at PCB-compatible temperatures. The morphologies of BMN thin films were investigated by AFM and SEM equipment. The electric properties (C-F, I-V) of Pt/BMN/Cu/polymer were evaluated using an impedance analysis (HP 4194A) and semiconductor parameter analyzer (HP4156A). $Bi_2Mg_{2/3}Nb_{4/3}O_7$(BMN) thin films deposited on copper clad laminate substrates by sputtering system as a function of Ar/$O_2$ flow rate at room temperature showed smooth surface morphologies having root mean square roughness of approximately 5.0 nm. 200-nm-thick films deposited at RT exhibit a dielectric constant of 40, a capacitance density of approximately $150\;nF/cm^2$, and breakdown voltage above 6 V. The crystallinity of the BMN thin films was studied by TEM and XRD. BMN thin film capacitors are expected to be promising candidates as embedded capacitors for printed circuit board (PCB).

• Korean Journal of Materials Research
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• v.16 no.12
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• pp.731-738
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• 2006

It is seriously considered using Al CMP (chemical mechanical planarization) process for the next generation 45 nm Al wiring process. Al CMP is known that it has a possibility of reducing process time and steps comparing with conventional RIE (reactive ion etching) method. Also, it is more cost effective than Cu CMP and better electrical conductivity than W via process. In this study, we investigated 4 different kinds of slurries based on abrasives for reducing scratches which contributed to make defects in Al CMP. The abrasives used in this experiment were alumina, fumed silica, alkaline colloidal silica, and acidic colloidal silica. Al CMP process was conducted as functions of abrasive contents, $H_3PO_4$ contents and pressures to find out the optimized parameters and conditions. Al removal rates were slowed over 2 wt% of slurry contents in all types of slurries. The removal rates of alumina and fumed silica slurries were increased by phosphoric acid but acidic colloidal slurry was slightly increased at 2 vol% and soon decreased. The excessive addition of phosphoric acid affected the particle size distributions and increased scratches. Polishing pressure increased not only the removal rate but also the surface scratches. Acidic colloidal silica slurry showed the highest removal rate and the lowest roughness values among the 4 different slurry types.

• Proceedings of the Korea Water Resources Association Conference
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• 2018.05a
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• pp.381-381
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• 2018

우리나라에서는 지속적인 자연재해로 각기 다른 필요성과 목적에 따라 다양한 형태의 홍수 침수 관련 지도가 작성되어 왔다. 연구 성과로 작성된 계획 빈도 및 상위 2개 빈도의 호우피해예상도를 실측 강우와 연계하여 재난관리단계별 대응단계에 활용하기 위해 실시간 피해위험구역을 표출하고자 한다. 본 연구는 실시간으로 피해위험구역을 표출하기 위해 실측 강우와 연계된 호우피해예상도에 공간 보간 알고리즘을 적용하고자 한다. 호우피해예상도란 돌발호우나 태풍으로 인하여 홍수가 발생하면 인명 및 재산피해를 최소화하기 위해 홍수지역을 미리 예측 가능하도록 제작된 지도이다. 지형자료(DEM), 하천 중심선(Stream Centerline), 하천 횡단면(Cross-Section Line), 제방고(Bank), 수문기상 자료(Hydrological Data), 조도계수(Roughness) 등을 사용하여 하천법 제 21조와 하천법시행령 제 17조를 근거로 작성된다. 본 연구에서는 호우피해예상도에 IDW(Inverse Distance Weighted, 역거리가중법) 보간, TIN(Triangulated Irregular Network system, 불규칙삼각망) 보간, Kriging 보간 방법 적용 알고리즘을 제시하고자 하였다. 호우피해예상도에 보간 알고리즘을 적용하기 위해 보간 방법에 따른 적용사례를 분석하였으며 그 결과, 보간 알고리즘을 적용한 호우피해예상도 보간을 통하여 계획빈도 및 상위 2개 빈도 이외의 빈도(하위빈도-계획빈도, 계획빈도-상위빈도 구간)에 대한 호우피해예상도의 피해위험구역 구현 방안을 제시하였다. 호우피해예상도에 IDW, TIN, Kriging 보간 알고리즘을 적용하여 계획빈도 및 상위빈도 이외의 빈도에 대한 피해위험구역을 표출 할 수 있다. 표출된 계획빈도 및 상위빈도 이외의 빈도를 지점확률강우량-빈도에 대한 Matching table을 통하여 실측 강우와 연계 가능하다. 본 연구 결과는 추후 풍수해피해예측시스템에 활용하여 재난관리단계별 예방 및 대응 단계에 활용 할 수 있을 것으로 판단된다.

• KSCE Journal of Civil and Environmental Engineering Research
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• v.31 no.3B
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• pp.205-209
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• 2011

The low carrying capacity caused by the deposition in a sewer line is one of the main reason of the urban flood. Therefore, an efficient maintenance and management of the storm water drainage system is very important to prevent urban flood. In this research, the sediment transport characteristics through a pressure pipeline were examined with laboratory experiments. Bed-forms in a pipeline, sediment rates, roughness due to sediments were examined. Experimental system consists of flow circulation system with a pump and a sediment feeder at the upstream of the pipeline. Sediments were supplied into a 60 mm-diameter and 8 m-long pipe. Maximum flow rate is $30m^3/hr$, and the sediment feeding rate range is 5 g/s~19 g/s. Governing parameters and estimation equation for sediment transport rate were developed. The mean velocity (U), coefficient of viscosity (${\mu}$), unit width bed load ($q_b$), mean diameter of particle ($d_{50}$), unit weight of sediment in water (${\gamma}^{\prime}_s$) were adopted as the most influencing factors of sediment transport patterns. The prediction equation for sediment transport rate were developed with two dimensionless terms. These two dimensionless terms showed a linear relationship with high correlation coefficient.

• Journal of the Korean Vacuum Society
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• v.20 no.6
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• pp.395-402
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• 2011

The nanomechanical properties of fully lithiated and unlithiated silicon nanowire deposited on silicon substrate have been studied with atomic force microscopy. Silicon nanowires were synthesized using the vapor-liquid-solid process on stainless steel substrates using Au catalyst. Fully lithiated silicon nanowires were obtained by using the electrochemical method, followed by drop-casting on the silicon substrate. The roughness, derived from a line profile of the surface measured in contact mode atomic force microscopy, has a smaller value ($0.65{\pm}0.05$ nm) for lithiated silicon nanowire and a higher value ($1.72{\pm}0.16$ nm) for unlithiated silicon nanowire. Force spectroscopy was utilitzed to study the influence of lithiation on the tip-surface adhesion force. Lithiated silicon nanowire revealed a smaller value (~15 nN) than that of the Si nanowire substrate (~60 nN) by a factor of two, while the adhesion force of the silicon nanowire is similar to that of the silicon substrate. The elastic local spring constants obtained from the force-distance curve, also shows that the unlithiated silicon nanowire has a relatively smaller value (16.98 N/m) than lithiated silicon nanowire (66.30 N/m) due to the elastically soft amorphous structures. The frictional forces of lithiated and unlithiated silicon nanowire were obtained within the range of 0.5-4.0 Hz and 0.01-200 nN for velocity and load dependency, respectively. We explain the trend of adhesion and modulus in light of the materials properties of silicon and lithiated silicon. The results suggest a useful method for chemical identification of the lithiated region during the charging and discharging process.

• Journal of Korea Technical Association of The Pulp and Paper Industry
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• v.47 no.4
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• pp.177-186
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• 2015

Until Mandelbrot introduced the concept of fractal geometry and fractal dimension in early 1970s, it has been generally considered that the geometry of nature should be too complex and irregular to describe analytically or mathematically. Here fractal dimension indicates a non-integer number such as 0.5, 1.5, or 2.5 instead of only integers used in the traditional Euclidean geometry, i.e., 0 for point, 1 for line, 2 for area, and 3 for volume. Since his pioneering work on fractal geometry, the geometry of nature has been found fractal. Mandelbrot introduced the concept of fractal geometry. For example, fractal geometry has been found in mountains, coastlines, clouds, lightning, earthquakes, turbulence, trees and plants. Even human organs are found to be fractal. This suggests that the fractal geometry should be the law for Nature rather than the exception. Fractal geometry has a hierarchical structure consisting of the elements having the same shape, but the different sizes from the largest to the smallest. Thus, fractal geometry can be characterized by the similarity and hierarchical structure. A process requires driving energy to proceed. Otherwise, the process would stop. A hierarchical structure is considered ideal to generate such driving force. This explains why natural process or phenomena such as lightning, thunderstorm, earth quakes, and turbulence has fractal geometry. It would not be surprising to find that even the human organs such as the brain, the lung, and the circulatory system have fractal geometry. Until now, a normal frequency distribution (or Gaussian frequency distribution) has been commonly used to describe frequencies of an object. However, a log-normal frequency distribution has been most frequently found in natural phenomena and chemical processes such as corrosion and coagulation. It can be mathematically shown that if an object has a log-normal frequency distribution, it has fractal geometry. In other words, these two go hand in hand. Lastly, applying fractal principles is discussed, focusing on pulp and paper industry. The principles should be applicable to characterizing surface roughness, particle size distributions, and formation. They should be also applicable to wet-end chemistry for ideal mixing, felt and fabric design for papermaking process, dewatering, drying, creping, and post-converting such as laminating, embossing, and printing.