• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
• /
• pp.247-247
• /
• 2012

Plasmon subwavelength nanostructures enable the structurally modulated color due to the resonance conditions for the specific wavelength range of light with the nanoscale hole arrays on a metal layer. While the unique properties offered from a single layer of metal may open up the potential applications of integrated devices to displays and sensors, fabrication requirements in nanoscale, typically on the order of or smaller than the wavelength of light in a corresponding medium can limit the cost-effective implementation of the plasmonic nanostructures. Simpler nanoscale replication technologies based on the soft lithography or roll-to-roll nanoimprinting can introduce economically feasible manufacturing process for these devices. Such replication requires an optimal design of a master template to produce a stamp that can be applied for a roll-to-roll nanoimprinting. In this paper, a master mold with subwavelength nanostructures is fabricated and optimized using focused ion beam for the applications to nanoimprinting process. Au thin film layer is deposited by sputtering on a glass that serves as a dielectric substrate. Focused ion beam milling (FIB, JEOL JIB-4601F) is used to fabricate surface plasmon subwavelength nanostructures made of periodic hole arrays. The light spectrum of the fabricated nanostructures is characterized by using UV-Vis-NIR spectrophotometer (Agilent, Cary 5000) and the surface morphology is measured by using atomic force microscope (AFM, Park System XE-100) and scanning electron microscope (SEM, JEOL JSM-7100F). Relationship between the parameters of the hole arrays and the corresponding spectral characteristics and their potential applications are also discussed.

• 대한기계학회논문집A
• /
• 제30권10호
• /
• pp.1314-1319
• /
• 2006

This paper describes the novel fabrication method of the high-aspect-ratio nano structure which is impossible by conventional method using a shadow mask and a Deep X-ray Lithography (DXRL). The shadow mask with $1{\mu}m-sized$ apertures is fabricated on the silicon membrane using a conventional UV-lithography. The size of aperture is reduced to 200nm by accumulated low stress silicon nitride using a LPCVD (low pressure chemical vapor deposition) process. The X-ray mask is fabricated by depositing absorber layer (Au, $3{\mu}m$) on the back side of nano shadow mask. The thickness of an absorber layer must deposit dozens micrometers to obtain contrast more than 100 for a conventional DXRL process. The thickness of $3{\mu}m-absorber$ layer can get sufficient contrast using a central beam stop method, blocking high energy X-rays. The nano circle and nano line, 200nm in diameter in width, respectively, were demonstrated 700nm in height with a negative photoresist of SU-8.

• 마이크로전자및패키징학회지
• /
• 제6권4호
• /
• pp.1-7
• /
• 1999

MCM-D 기판에 수동소자를 내장시키는 공정을 개발하였다. MCM-D 기판은 Cu/감광성 BCB를 각각 금속배선 및 절연막 재료로 사용하였고, 금속배선은 Ti/cu를 각각 1000$\AA$/3000$\AA$으로 스퍼터한 후 fountain 방식으로 전기 도금하여 3 um Cu를 형성하였으며, BCB 층에 신뢰성있는 비아형성을 위하여 BCB의 공정특성과 $C_2F_6$를 사용한 플라즈마 cleaning영향을 AES로 분석하였다. 이 실험에서 제작한 MCM-D 기판은 절연막과 금속배선 층이 각각 5개, 4개 층으로 구성되는데 저항은 2번째 절연막 위에 thermal evaporator 방식으로 NiCr을 600$\AA$증착하여 시트저항이 21 $\Omega$/sq가 되게 형성하였고. 인덕터는 coplanar 구조로 3, 4번째 금속배선층에 형성하였으며, 커패시터는 절연막으로 PECVD $Si_3N_4$를 900$\AA$증착한 후 1, 2번째 금속배선층에 형성하여 88nF/$\textrm {cm}^2$의 커패시턴스를 얻었다. 이 공정은 PECVD $Si_3N_4$와 thermal evaporation NiCr 공정을 이용함으로써 기존의 반도체 공정을 이용하여 MCM-D 기판에 수동소자를 안정적으로 내장시킬 수 있었다.

• 한국정보디스플레이학회:학술대회논문집
• /
• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
• /
• pp.186-189
• /
• 2006

The flexible organic thin film transistor (OTFT) array to use as a switching device for an organic light emitting diode (OLED) was designed and fabricated in the microcontact printing and room temperature process. The gate, source, and drain electrode patterns of OTFT were fabricated by microcontact printing process. The OTFT array with dielectric layer and organic active semiconductor layer formed at room temperature or at a temperature lower than $40^{\circ}C$. The microcontact printing process using SAM and PDMS stamp made it possible to fabricate OTFT arrays with channel lengths down to even submicron size, and reduced the fabrication process by 10 steps compared with photolithography. Since the process was done in room temperature, there was no pattern shrinkage, transformation, and bending problem appeared. Also, it was possible to improve electric field mobility, to decrease contact resistance, to increase close packing of molecules by SAM, and to reduce threshold voltage by using a big dielectric.

• 대한기계학회논문집A
• /
• 제28권11호
• /
• pp.1794-1798
• /
• 2004

We present a fabrication method of high aspect ratio 100nm-scale nickel stamper using e-beam writing for the injection molding of optical grating patterns. Conventional nickel stamper is fabricated by nickel electroplating process which is followed by seed layer deposition. In this paper, we have used chrome coated blank mask without anti-reflection layer of CrON in order to simplified electroplating process. In experimental study, we have optimized electron-beam dosage for 100nm-scale optical grating patterns with 2.5-aspect ratio, and fabricated nickel stamper using above grating patterns as PR mold. Fabricated nickel stamper have showed height of 240$\pm$20nm and width of 116$\pm$6nm.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
• /
• pp.180-181
• /
• 2006

As a rule, high temperature superconducting coated conductors have multi-layered buffers consisting of seed, diffusion barrier and cap layers. Multi-buffer layer deposition requires longer fabrication time. This is one of main reasons which increases fabrication cost Thus, single buffer layer deposition seems to be important for practical coated conductor process. In this study, a single layered buffer deposition of $CeO_2$ for low cost coated conductors has been tried using thermal evaporation technique 100nm-thick $CeO_2$ layers deposited by thermal evaporation were found to act as a diffusion layer. $0.4{\mu}m$-thick SmBCO superconducting layers were deposited by thermal co-evaporation on the $CeO_2$ buffered Ni-W substrate. Critical current of 118A/$cm^2$ was obtained for the SmBCO coated conductors.

• 한국세라믹학회지
• /
• 제34권12호
• /
• pp.1199-1204
• /
• 1997

SiC conversion layer was fabricated by the chemical vapor reaction between graphite substrate and silica powder. The CVR process was carried out in nitrogen atmosphere at 175$0^{\circ}C$ and 185$0^{\circ}C$. From the reduction of silica powder with graphite substrate, the SiO vapor was created, infiltrated into the graphite substrate, then, the SiC conversion layer was formed from the vapor-solid reaction of SiO and graphite. In the XRD pattern of conversion layer, it was confirmed that 3C $\beta$-SiC phase was created at 175$0^{\circ}C$ and 185$0^{\circ}C$. Also, in the back scattered image of cross-sectional conversion layer, it was found that the conversion layer was easily formed at 185$0^{\circ}C$, the interface of graphite substrate and SiC layer was observed. It was though that the coke particle size and density of graphite substrate mainly affect the XRD pattern and microstructure of SiC conversion layer. In the oxidation test of 100$0^{\circ}C$, the SiC converted graphites exhibited good oxidation resistance compared with the unconverted graphites.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
• /
• pp.394-394
• /
• 2012

We fabricated organic-inorganic superlattice films using molecular layer deposition (MLD) and atomic layer deposition (ALD). The MLD is a gas phase process in the vacuum like to atomic layer deposition (ALD) and also relies on a self-terminating surface reaction of organic precursor which results in the formation of a monolayer in each sequence. In the MLD process, 'Alucone' is very famous organic thin film fabricated using MLD. Alucone layers were grown by repeated sequential surface reactions of trimethylaluminum and ethylene glycol at substrate temperature of $80^{\circ}C$. In addition, we developed UV-assisted $Al_2O_3$ with gas diffusion barrier property better than typical $Al_2O_3$. The UV light was very effective to obtain defect-free, high quality $Al_2O_3$ thin film which is determined by water vapor transmission rate (WVTR). Ellipsometry analysis showed a self-limiting surface reaction process and linear growth of each organic, inorganic film. Composition of the organic films was confirmed by infrared (IR) spectroscopy. Ultra-violet (UV) spectroscopy was employed to measure transparency of the organic-inorganic superlattice films. WVTR is calculated by Ca test. Organic-inorganic superlattice films using UV-assisted $Al_2O_3$ and alucone have possible use in gas diffusion barrier for OLED.

• Design & Manufacturing
• /
• 제12권3호
• /
• pp.19-24
• /
• 2018

Fused deposition Modeling (FDM) is one of the most widely used for the prototype of parts at ease. The FDM 3D printing method is a lamination manufacturing method that the resin is melted at a high temperature and piled up one by one. Another term is also referred to as FFF (Fused Filament Fabrication). 3D printing technology is mainly used only in the area of prototype production, not in production of commercial products. Therefore, if FDM 3D printer is applied to the product process of commercial products when considered, the strength and dimensional accuracy of the manufactured product is expected to be important. In this study, the mechanical properties of parts made by 3D printing with FDM method were investigated. The aim of this work is to examine how the mechanical properties of the FDM parts, by changing of processing FDM printing direction and the height of stacking layer is affected. The effect of the lamination direction and the height of the stacking layer, which are set as variables in the lamination process, by using the tensile specimen and impact specimen after the FDM manufacturing process were investigated and analyzed. The PLA (Poly Lactic Acid) was used as the filament materials for the 3D printing.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
• /
• pp.312.1-312.1
• /
• 2016

We have deposited ZnO thin films by ultraviolet (UV) enhanced atomic layer deposition using diethylznic (DEZ) and water (H2O) as precursors with UV light. The atomic layer deposition relies on alternating dose of the precursor on the surface and subsequent chemisorption of the precursors with self-limiting growth mechanism. Though ALD is useful to deposition conformal and precise thin film, the surface reactions of the atomic layer deposition are not completed at low temperature in many cases. In this experiment, we focused on the effects of UV radiation during the ALD process on the properties of the inorganic thin films. The surface reactions were found to be complementary enough to yield uniform inorganic thin films and fully react between DEZ and H2O at the low temperature by using UV irradiation. The UV light was effective to obtain conductive ZnO film. And the stability of TFT with UV-enhanced ZnO was improved than ZnO by thermal ALD method. High conductive UV-enhanced ZnO film have the potential to applicability of the transparent electrode.