• Journal of Information Display
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• 제8권3호
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• pp.1-4
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• 2007

The influence of a silane layer on the performances of polymer light emitting diode(pLED)s has been studied. Glycidoxypropyltrimethoxysilane(GPS) with an epoxy functional group was used as a surface modifier for ITO substrates. The GPS layer was inserted between an ITO and a poly(3,4)-ethylenedioxythiophene/polystyrenesulfonate(PEDOT) by wet process and the performances of PLEDs were investigated. The introduction of GPS layer increased the brightness and efficiency of PLEDs by 30%. In addition, the lifetime of PLEDs was also improved considerably by using GPS as a surface modifier.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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• pp.543-546
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• 2003

We studied the dielectric layer effect on the electro-optical (EO) properties of liquid crystal (LC) devices together with numerical simulations. Recently, it has been reported that the surface dielectric layer affects significantly the EO performances of LC microlens arrays and wide-viewing LC displays. it is found that the operation voltage of the LC device decreases with increasing the dielectric constant or with decreasing the thickness of the dielectric polymer layer. The experimental data agree well with theoretical results predicted in a simple dielectric model within the continuum formalism.

• 한국통신학회논문지
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• 제37권8A호
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• pp.689-697
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• 2012

본 논문은 무선 채널 환경에서 H.264 스케일러블 비디오 코딩으로 부호화된 비디오 데이터의 전송 성능 개선과 신뢰성 향상을 위해 기본계층 반복 전송과 HARQ를 제안하고 그 성능을 확인하고 있다. 제안 방법은 향상계층을 제외하고 기본계층에만 적용되기 때문에, 무선자원의 부족과 전송 지연의 문제들도 해결해 줄 수 있다. 수치 결과 제안 방법은 SNR=3.4dB 기준으로 $1.5{\times}10^{-5}$의 BER 성능을 보였고, 동일 SNR에서 $1.2{\times}10^{-3}$의 성능을 보여 주었다. 또한 실험 영상 결과를 통해서도 제안 방법이 무선 링크에서 SVC 성능을 개선함을 확인하였다.

• Journal of Information Display
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• 제6권3호
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• pp.26-29
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• 2005

Nanosize cobalt aluminate($CoAl_2O_4$) power was coated as filter layer for us to improve the color purity and contrast performances on the inner face of CRT panel. We simulated color properties by measuring the transmittance and thickness of the coated filter layer. Contrast performance could be improved and color gamut was also changed by the selective light absorption of filter layer at 580${\sim}$605 nm.

• 한국가금학회:학술대회논문집
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• 한국가금학회 2001년도 제18차 정기총회 및 학술발표 PROCEEDINGS
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• pp.54-55
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• 2001

The experiments were conducted to evaluate the feeding values of red pepper seed (Exp. 1) and to investigate its dietary supplementation on layer performances (Exp. 2). The values of TME, TMEn and average TAAA determined by force-feeding 14 roosters (Hy-line) were 2.83 kcal/g, 2.94 kcal/g and 82.72%, respectively. a total of 200 layers (ISA-brown) was divided into 4 groups with 5 replicates of 10 birds per replicate, and fed the experimental diets containing different level of red pepper seed (0, 3, 5, 10%). There were no differences in performances of laying hens among treatments. Liver lipids in all groups containing red pepper seed were significantly reduced as compared to those of control (P＜0.05).

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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• pp.1175-1178
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• 2005

Nanosize cobalt aluminate($CoAl_2O_4$) power as filter layer was coated to improve the color purityand contrast performances on inner face of CRT panel. We simulated color properties by measuring the transmittance and thickness of the coated filter layer. Contrast performance could be improved and color gamut was also changed because of the selective light absorption of filter layer at $580{\sim}605\;nm$.

• 한국방송∙미디어공학회:학술대회논문집
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• 한국방송공학회 1995년도 학술대회
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• pp.97-100
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• 1995

In transmission of image sequences over ATM networks, the packet loss problem and channel sharing efficiency are important. As a possible solution two-layer video coding methods have been proposed. These methods transmit video information over the network with different levels of protection with respect to packets loss. In this paper, a two-layer coding method using pyramid structure is proposed and several realizations of two-layer video coding methods are presented and their performances are compared.

• 대한전자공학회논문지SD
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• 제48권5호
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• pp.12-17
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• 2011

본 연구에서는 $Si_xGe_{1-x}$ 버퍼층 위에 성장된 strained-Si에 Ge 농도에 따라 n-MOSFET를 제작하고 소자 제작 후의 열처리 온도에 따른 소자의 아날로그 성능을 측정 분석하였다. 전자의 유효 이동도는 Ge 농도가 증가함에 따라 증가하였으나 32%로 높을 때에는 열처리 온도에 상관없이 오히려 감소하는 것으로 측정되었다. 상온에서 Ge 농도가 증가함에 따라 증가 소자의 아날로그 성능 지수가 우수하였으나 32% 농도에서는 오히려 좋지 않았다. 고온에서 strained-Si의 전자 유효이동도 저하가 Si보다 심하기 때문 SGOI 소자의 아날로그 성능 저하가 SOI 소자보다 심한 것을 알 수 있었다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제14권5호
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• pp.601-608
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• 2014

In this paper, we have characterized the electrical properties related to gate leakage current in AlGaN/GaN MISHFETs with varying the thickness (0 to 10 nm) of $Al_2O_3$ gate insulator which also serves as a surface protection layer during high-temperature RTP. The sheet resistance of the unprotected TLM pattern after RTP was rapidly increased to $1323{\Omega}/{\square}$ from the value of $400{\Omega}/{\square}$ of the as-grown sample due to thermal damage during high temperature RTP. On the other hand, the sheet resistances of the TLM pattern protected with thin $Al_2O_3$ layer (when its thickness is larger than 5 nm) were slightly decreased after high-temperature RTP since the deposited $Al_2O_3$ layer effectively neutralizes the acceptor-like states on the surface of AlGaN layer which in turn increases the 2DEG density. AlGaN/GaN MISHFET with 8 nm-thick $Al_2O_3$ gate insulator exhibited extremely low gate leakage current of $10^{-9}A/mm$, which led to superior device performances such as a very low subthreshold swing (SS) of 80 mV/dec and high $I_{on}/I_{off}$ ratio of ${\sim}10^{10}$. The PF emission and FN tunneling models were used to characterize the gate leakage currents of the devices. The device with 5 nm-thick $Al_2O_3$ layer exhibited both PF emission and FN tunneling at relatively lower gate voltages compared to that with 8 nm-thick $Al_2O_3$ layer due to thinner $Al_2O_3$ layer, as expected. The device with 10 nm-thick $Al_2O_3$ layer, however, showed very high gate leakage current of $5.5{\times}10^{-4}A/mm$ due to poly-crystallization of the $Al_2O_3$ layer during the high-temperature RTP, which led to very poor performances.

• Transactions on Electrical and Electronic Materials
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• 제7권1호
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• pp.16-20
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• 2006

In this paper, we investigated the effects of short-term oxygen plasma treatment of semiconducting silicone layer to improve interfacial performances in joints prepared with a insulating silicone materials. Surface characterizations were assessed using contact angle measurement and x-ray photoelectron spectroscopy (XPS), and then adhesion level and electrical performance were evaluated through T-peel tests and electrical breakdown voltage tests of treated semi-conductive and insulating joints. Plasma exposure mainly increased the polar component of surface energy from $0.21\;dyne/cm^2$ to $47\;dyne/cm^2$ with increasing plasma treatment time and then leveled off. Based on XPS analysis, the surface modification can be mainly ascribed to the creation of chemically active functional groups such as C-O, C=O and COH on semi-conductive silicone surface. This oxidized rubber layer is inorganic silica-like structure of Si bound with three to four oxygen atoms ($SiO_x,\;x=3{\sim}4$). The oxygen plasma treatment produces an increase in joint strength that is maximum for 10 min treatment. However, due to brittle property of this oxidized layer, the highly oxidized layer from too much extended treatment could be act as a weak point, decreasing the adhesion strength. In addition, electrical breakdown level of joints with adequate plasma treatment was increased by about $10\;\%$ with model samples of joints prepared with a semi-conducting/ insulating silicone polymer after applied to interface.