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Analog performances of SGOI MOSFET with Ge mole fraction  

Lee, Jae-Ki (Dept. of Information Engineering, Gachon Univ. of Medicine and Science)
Kim, Jin-Young (Dept. of Electronics Engineering, Univ. of Incheon)
Cho, Won-Ju (Dept. of Electronic Materials Engineering, Kwangwoon University)
Park, Jong-Tae (Dept. of Electronics Engineering, Univ. of Incheon)
Publication Information
Journal of the Institute of Electronics Engineers of Korea SD / v.48, no.5, 2011 , pp. 12-17 More about this Journal
Abstract
In this work, the analog performances of n-MOSFET fabricated on strained-Si/relaxed Si buffer layer with Ge mole fractions and thermal annealing temperatures after device fabrication have been characterized in Depth. The effective electron mobility was increased with the increase of Ge mole fraction for all annealing temperatures. However the effective electron mobility was decreased at the Ge mole fraction of 32%. The analog performances were enhanced with the increase of Ge mole fraction at the room temperature but they were degraded at the Ge mole fraction of 32%. Since the degradation of the effective electron mobility of strained-Si layer is more significant than one of conventional Si layer at elevated temperature, the degradation of analog performances of SGOI devices were increased than those of SOI devices.
Keywords
Strained-Si; Ge mole fraction; Analog performance; SOI;
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