• Journal of Information Display
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• v.8 no.3
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• pp.1-4
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• 2007

The influence of a silane layer on the performances of polymer light emitting diode(pLED)s has been studied. Glycidoxypropyltrimethoxysilane(GPS) with an epoxy functional group was used as a surface modifier for ITO substrates. The GPS layer was inserted between an ITO and a poly(3,4)-ethylenedioxythiophene/polystyrenesulfonate(PEDOT) by wet process and the performances of PLEDs were investigated. The introduction of GPS layer increased the brightness and efficiency of PLEDs by 30%. In addition, the lifetime of PLEDs was also improved considerably by using GPS as a surface modifier.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.543-546
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• 2003

We studied the dielectric layer effect on the electro-optical (EO) properties of liquid crystal (LC) devices together with numerical simulations. Recently, it has been reported that the surface dielectric layer affects significantly the EO performances of LC microlens arrays and wide-viewing LC displays. it is found that the operation voltage of the LC device decreases with increasing the dielectric constant or with decreasing the thickness of the dielectric polymer layer. The experimental data agree well with theoretical results predicted in a simple dielectric model within the continuum formalism.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.37 no.8A
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• pp.689-697
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• 2012

In this paper, we propose base layer repetition and HARQ schemes for improving the reliability and the performances of H.264 SVC video transmission in a wireless channel, and investigate its performances. The proposed method may solve the problems of transmission delay as well as the scarcity of wireless resources, since the proposed scheme was applied for only base layer, not for enhancement layer. The numerical results show that the proposed scheme can enhance the BER performance of $1.5{\times}10^{-5}$ and the FER of $1.2{\times}10^{-3}$, when SNR=3.4dB. Also, it was confirmed through the resultant images that the proposed method can improve the SVC performance in the wireless link.

• Journal of Information Display
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• v.6 no.3
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• pp.26-29
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• 2005

Nanosize cobalt aluminate($CoAl_2O_4$) power was coated as filter layer for us to improve the color purity and contrast performances on the inner face of CRT panel. We simulated color properties by measuring the transmittance and thickness of the coated filter layer. Contrast performance could be improved and color gamut was also changed by the selective light absorption of filter layer at 580${\sim}$605 nm.

• Proceedings of the Korea Society of Poultry Science Conference
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• 2001.11a
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• pp.54-55
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• 2001

The experiments were conducted to evaluate the feeding values of red pepper seed (Exp. 1) and to investigate its dietary supplementation on layer performances (Exp. 2). The values of TME, TMEn and average TAAA determined by force-feeding 14 roosters (Hy-line) were 2.83 kcal/g, 2.94 kcal/g and 82.72%, respectively. a total of 200 layers (ISA-brown) was divided into 4 groups with 5 replicates of 10 birds per replicate, and fed the experimental diets containing different level of red pepper seed (0, 3, 5, 10%). There were no differences in performances of laying hens among treatments. Liver lipids in all groups containing red pepper seed were significantly reduced as compared to those of control (P＜0.05).

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1175-1178
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• 2005

Nanosize cobalt aluminate($CoAl_2O_4$) power as filter layer was coated to improve the color purityand contrast performances on inner face of CRT panel. We simulated color properties by measuring the transmittance and thickness of the coated filter layer. Contrast performance could be improved and color gamut was also changed because of the selective light absorption of filter layer at $580{\sim}605\;nm$.

• Proceedings of the Korean Society of Broadcast Engineers Conference
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• 1995.06a
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• pp.97-100
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• 1995

In transmission of image sequences over ATM networks, the packet loss problem and channel sharing efficiency are important. As a possible solution two-layer video coding methods have been proposed. These methods transmit video information over the network with different levels of protection with respect to packets loss. In this paper, a two-layer coding method using pyramid structure is proposed and several realizations of two-layer video coding methods are presented and their performances are compared.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.5
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• pp.12-17
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• 2011

In this work, the analog performances of n-MOSFET fabricated on strained-Si/relaxed Si buffer layer with Ge mole fractions and thermal annealing temperatures after device fabrication have been characterized in Depth. The effective electron mobility was increased with the increase of Ge mole fraction for all annealing temperatures. However the effective electron mobility was decreased at the Ge mole fraction of 32%. The analog performances were enhanced with the increase of Ge mole fraction at the room temperature but they were degraded at the Ge mole fraction of 32%. Since the degradation of the effective electron mobility of strained-Si layer is more significant than one of conventional Si layer at elevated temperature, the degradation of analog performances of SGOI devices were increased than those of SOI devices.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.5
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• pp.601-608
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• 2014

In this paper, we have characterized the electrical properties related to gate leakage current in AlGaN/GaN MISHFETs with varying the thickness (0 to 10 nm) of $Al_2O_3$ gate insulator which also serves as a surface protection layer during high-temperature RTP. The sheet resistance of the unprotected TLM pattern after RTP was rapidly increased to $1323{\Omega}/{\square}$ from the value of $400{\Omega}/{\square}$ of the as-grown sample due to thermal damage during high temperature RTP. On the other hand, the sheet resistances of the TLM pattern protected with thin $Al_2O_3$ layer (when its thickness is larger than 5 nm) were slightly decreased after high-temperature RTP since the deposited $Al_2O_3$ layer effectively neutralizes the acceptor-like states on the surface of AlGaN layer which in turn increases the 2DEG density. AlGaN/GaN MISHFET with 8 nm-thick $Al_2O_3$ gate insulator exhibited extremely low gate leakage current of $10^{-9}A/mm$, which led to superior device performances such as a very low subthreshold swing (SS) of 80 mV/dec and high $I_{on}/I_{off}$ ratio of ${\sim}10^{10}$. The PF emission and FN tunneling models were used to characterize the gate leakage currents of the devices. The device with 5 nm-thick $Al_2O_3$ layer exhibited both PF emission and FN tunneling at relatively lower gate voltages compared to that with 8 nm-thick $Al_2O_3$ layer due to thinner $Al_2O_3$ layer, as expected. The device with 10 nm-thick $Al_2O_3$ layer, however, showed very high gate leakage current of $5.5{\times}10^{-4}A/mm$ due to poly-crystallization of the $Al_2O_3$ layer during the high-temperature RTP, which led to very poor performances.

• Transactions on Electrical and Electronic Materials
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• v.7 no.1
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• pp.16-20
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• 2006

In this paper, we investigated the effects of short-term oxygen plasma treatment of semiconducting silicone layer to improve interfacial performances in joints prepared with a insulating silicone materials. Surface characterizations were assessed using contact angle measurement and x-ray photoelectron spectroscopy (XPS), and then adhesion level and electrical performance were evaluated through T-peel tests and electrical breakdown voltage tests of treated semi-conductive and insulating joints. Plasma exposure mainly increased the polar component of surface energy from $0.21\;dyne/cm^2$ to $47\;dyne/cm^2$ with increasing plasma treatment time and then leveled off. Based on XPS analysis, the surface modification can be mainly ascribed to the creation of chemically active functional groups such as C-O, C=O and COH on semi-conductive silicone surface. This oxidized rubber layer is inorganic silica-like structure of Si bound with three to four oxygen atoms ($SiO_x,\;x=3{\sim}4$). The oxygen plasma treatment produces an increase in joint strength that is maximum for 10 min treatment. However, due to brittle property of this oxidized layer, the highly oxidized layer from too much extended treatment could be act as a weak point, decreasing the adhesion strength. In addition, electrical breakdown level of joints with adequate plasma treatment was increased by about $10\;\%$ with model samples of joints prepared with a semi-conducting/ insulating silicone polymer after applied to interface.