• Applied Microscopy
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• v.47 no.1
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• pp.13-18
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• 2017

High-quality graphene was synthesized on Cu foil and $Fe_2O_3$ film using $CH_4$ gas via inductively-coupled plasma chemical vapor deposition (ICPCVD). The graphene film was formed on $Fe_2O_3$ at a temperature as low as $700^{\circ}C$. Few-layer graphene was formed within a few seconds and 1 min on Cu and $Fe_2O_3$, respectively. With increasing growth time and plasma power, the graphene thickness was controllably reduced and ultimately self-limited to a single layer. Moreover, the crystal quality of graphene was constantly enhanced. Understanding the ICPCVD growth kinetics that are critically affected by ICP is useful for the controllable synthesis of high-quality graphene on metals and oxides for various electronic applications.

• Journal of the Korean Society for Heat Treatment
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• v.20 no.6
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• pp.299-305
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• 2007

The effect of spray deposition of oxide particles on oxidation behaviors of as-cast Mo-14.2Si-9.6B (at%) alloys at $1200^{\circ}C$ up to for 100 hrs has been investigated. Various oxide powders are utilized to make coatings by spray deposition, including $SiO_2,\;TiO_2,\;ZrO_2,\;HfO_2$ and $La_2O_3$. It is demonstrated that the oxidation resistance of the cast Mo-Si-B alloy can be significantly improved by coating with those oxide particles. The growth of the oxide layer is reduced for the oxide particle coated Mo-Si-B alloy. Especially, for the alloy with $ZrO_2$ coating, the thickness of oxide layer becomes only one fifth of that of uncoated alloys when exposed to in air for 100 hrs. The reduction of oxide scale growth of the cast Mo-Si-B alloy due to oxide particle coatings are discussed in terms of the change of viscosity of glassy oxide phases that form during oxidation at high temperature.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.54 no.7
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• pp.308-314
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• 2005

The 2 GHz film bulk acoustic wave resonator(FBAR), one of the most necessary device of the next generation mobile communication system, consisted of solidly mounted resonator(SMR) structure using Brags reflector, was researched in this paper The FBAR applied SiO$_{2}$ and W had large difference of the acoustic impedance to reflector Al to electrode and ZnO to piezoelectric layer. Specially, the FBAR applied the two-step deposition method to improve the c-axis orientation and increase reproducibility of the fabrication device had good performance. The electrical properties of plasma such as impedance, resistance, reactance, $V_{pp},\;I{pp}$, VSWR and phase difference of voltage and current, was analyzed and measured by RF sensor with the variable experiment process factors such as gas ratio, RF power and base vacuum level about concerning the thickness, c-axis orientation, adhesion and roughness. The FBAR device about the optimum condition resulted reflection loss(S$_{11}$) of -17 dB, resonance frequency of 1.93 GHz, electric-mechanical coefficient(k$_{eff}$) of 2.38 $\%$ and Qualify factor of 580. It was seen better qualify than the common dielectric filter at present and expected on business to the filter device of 2 GHz bandwidth with the MMIC technology.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.128-128
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• 2013

Fabrication of heterogeneous catalysts using Atomic Layer Deposition (ALD) has recently been attracting attention of surface chemists and physicists. In this talk, I will present recent results about structures and chemical activities of various catalysts prepared by ALD, particularly focusing on Ni-based catalysts. Ni has been considered as potential catalysts for $CO_2$ reforming of methane (CRM); however, Ni often undergoes rapid decrease in catalytic activity with time, and therefore, application of Ni as catalysts for CRM has been regarded as difficult so far. Deactivation of Ni catalysts during CRM reaction is from either coke formation on Ni surface or sintering of Ni particles during reaction. Two different strategies have been used for enhancing stability of Ni-based catalysts; $TiO_2$ nanoparticles were deposited on micrometer-size Ni particles by ALD, which turned out to reduce coke formation on Ni surfaces. Ni nanoparticles deposited by ALD on mesoporous silica showed high activity and long-term stability from CRM without coke deposition and sintering during CRM reaction. Ni-based catalysts have been also used for oxidation of toluene, which is one of the most notorious gases responsible for sick-building syndrome. It was shown that onset-temperature of Ni catalysts for toluene oxidation is as low as $120^{\circ}C$. At $250\circ}C$, total oxidation of toluene to $CO_2$ with a 100% conversion was found.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.367-367
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• 2013

Commercial applications of indium tin oxide (ITO) can be separated into two useful areas. As it is perceived to bear electrical properties and optical transparency at once, its chance to apply to promising fields, usually for an optical device, gets greater in the passing time. ITO is one of the transparent conducting oxides (TCO), and required to carry the relative resistance less than $10^{-3}{\Omega}$/cm and transmittances over 80 % in the visible wavelength of light. Because ITO has considerable refractive index, there exist applications for anti-reflection coatings. Anti-reflection properties require gradual change in refractive index from films to air. Such changes are obtained from film density or nano-clustered fractional void. Glancing angle deposition (GLAD) method is a well known process for adjusting nanostructure of the films. From its shadowing effects, GLAD helps to deposit well-controlled porous films effectively. In this study, we are comparing the reference sample to samples coated with controlled ITO multilayer accumulated by an e-beam evaporation system. At first, the single ITO layer samples are prepared to decide refractive index with ellipsometry. Afterwards, ITO multilayer samples are fabricated and fitted by multilayer ellipsometric model based on single layer data. The structural properties were measured by using atomic force microscopy (AFM), and by scanning X-ray diffraction (XRD) measurements. The ellipsometry was used to determine refractive indices and extinction coefficient. The optical transmittance of the film was investigated by using an ultraviolet-visible (UV-Vis) spectrophotometer.

• Journal of the Korean Society for Heat Treatment
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• v.4 no.4
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• pp.1-14
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• 1991

In PECVD(Plasma-Enhanced Chemical Vapor Deposition) process, titanium nitride is thin and its adhesion is poor for the protective coatings. Therefore it has been studied that intermediate layer forms between substrate and TiN thin film. Using R.F. plasma nitriding, nitride layer was first formed, then TiN thin film coated by PECVD. The chemical composition of the coatings has been characterized using AES, EDS and their crystallographic structure by means of XRD. Mechanical properties such as microhardness and film adhesion have also been determined by vickers hardness test, scratch test and indentation test. As a result, there was no difference in chemical composition and structure between the TiN deposition only and the composite of TiN deposition on nitrided steel. It was found that nitrided substrate increased the hardness of TiN coatings and was beneficial in preventing the plastic deformation in the substrate. Therefore the effective load bearing capacity of the TiN coatings on nitrided steel was increased and their adhesion was improved as well. According to the results of this study, the processes that lead to the formation of composite layers characterized by good working properties, i.e., high microhardness, adhesion and resistance to deformation.

• Membrane and Water Treatment
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• v.6 no.2
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• pp.161-172
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• 2015

Forward osmosis (FO) is an emerging membrane technology with potential applications in desalination and wastewater reclamation. The osmotic pressure gradient across the FO membrane is used to generate water flux. In this study, flux performance and foulant deposition on the FO membrane were systematically investigated with a co-current cross-flow membrane system. Sodium alginate (SA), bovine serum albumin (BSA) and tannic acid (TA) were used as model foulants. Organics adsorbed on the membrane were peeled off via oscillation and characterized by Fourier transform infrared (FTIR) spectroscopy and scanning electron microscopy (SEM). When an initial flux of $8.42L/m^2h$ was applied, both flux reduction and foulant deposition were slight for the feed solution containing BSA and TA. In comparison, flux reduction and foulant deposition were much more severe for the feed solution containing SA, as a distinct SA cake-layer was formed on the membrane surface and played a crucial role in membrane fouling. In addition, as the initial SA concentration increased in FS, the thickness of the cake-layer increased remarkably, and the membrane fouling became more severe.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.901-904
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• 2001

For the c-axis oriented epitaxial YBa$_2$Cu$_3$O$_{7-{\delta}}$ thin film on r-cut sapphire substrate it is necessary to deposit buffer layers. The CeO$_2$buffer layer was deposited on sapphire substrate using RF magnetron sputtering system. We investigated XRD pattern of CeO$_2$thin films at various sputtering conditions such as sputtering gas ratio, sputtering power, target to substrate distance, sputtering pressure and substrate temperature. The optimum condition was 15 mTorr with deposition pressure, 1:1.2 with $O_2$and Ar ratio and 9cm with target to substrate distance. The CeO$_2$(200) peak was notable for a deposition temperature above 75$0^{\circ}C$. The YBa$_2$Cu$_3$O$_{7-{\delta}}$ was deposited on CeO$_2$buffered r-cut sapphire substrate using pulsed laser ablation. The YBa$_2$Cu$_3$O$_{7-{\delta}}$CeO$_2$(200)/A1$_2$O$_3$thin film was exhibited a critical temperature of 89K.xhibited a critical temperature of 89K.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.12-12
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• 2008

Ruthenium is one of the noble metals having good thermal and chemical stability, low resistivity, and relatively high work function(4.71eV). Because of these good physical, chemical, and electrical properties, Ru thin films have been extensively studied for various applications in semiconductor devices such as gate electrode for FET, capacitor electrodes for dynamic random access memories(DRAMs) with high-k dielectrics such as $Ta_2O_5$ and (Ba,Sr)$TiO_3$, and capacitor electrode for ferroelectric random access memories(FRAMs) with Pb(Zr,Ti)$O_3$. Additionally, Ru thin films have been studied for copper(Cu) seed layers for Cu electrochemical plating(ECP) in metallization process because of its good adhesion to and immiscibility with Cu. We investigated Ru thin films by thermal ALD with various deposition parameters such as deposition temperature, oxygen flow rate, and source pulse time. Ru thin films were grown by ALD(Lucida D100, NCD Co.) using RuDi as precursor and $O_2$ gas as a reactant at 200~$350^{\circ}C$.

• JSTS:Journal of Semiconductor Technology and Science
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• v.5 no.2
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• pp.120-126
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• 2005

We have proposed a characteristic method to estimate real composition when multi component oxide films are deposited by ALD. Final atomic concentration ratio was theoretically calculated from the film densities and growth rates for $HfO_2$ and $Al_2O_3$ using ALD processed HfxAhOz mms.W e have transformed initial source feeding ratio during deposition to fins] atomic ratio in $Hf_xAl_yO_z$ films through thickness factors ($R_{HFO_2}$ ami $R_{Al_2O_3}$) ami concentration factor(C) defined in our experiments. Initial source feeding ratio could be transformed into the thickness ratio by each thickness factor. Final atomic ratio was calculated from thickness ratio by concentration factor. It has been successfully confirmed that the predicted atomic ratio was in good agreement with the actual measured value by ICP-MS analysis.