• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2007.06a
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• pp.207-210
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• 2007

We prepared Al doped ZnO/Ag/Al doped ZnO on the polymer substrate by Facing Target Sputtering (FTS). FTS featured Facing Target Sputtering featured that deposition is stable at the low pressure, it has high plasma density and suppresses the substrate damage from energetic particles. We fixed to 50nm up and down thickness of AZO layer, respectively and that of intermediate Ag layer was adjusted with deposition time. In the result, AZO/Ag/AZO multilayer thin films have much better electrical conductivity than AZO single layer thin film. As increasing the thickness of Ag layer, the transmittance decreased.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.940-943
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• 2005

The characteristics of a-Si:H TFTs with silicon oxide as passivation layer were reported. It was studied that the insulating characteristics and step coverage characteristics of low temperature silicon oxide before applying to a-Si:H TFT fabrications. With the optimum deposition conditions considering electrical and deposition characteristics, low temperature silicon oxide was applied to a-Si:H TFTs. The changes in characteristics of a-Si:H TFTs were analyzed after replacing silicon nitride passivation layer with low temperature silicon oxide layer. This low temperature silicon oxide can be adapted to high resolution a-Si:H TFT LCD panels.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.289-289
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• 2011

The conducting polymer thin films were deposited using the gas phase method which known as molecular layer deposition (MLD). Terephthalaldehyde (TPA) and p-phenylenediamine (PD) were used as monomers to deposit conducting polymer. Self-terminating nature of TPA and PD reaction were demonstrated by growth rate saturation versus precursors dosing time. Infrared spectroscopic and X-ray photoelectron spectroscopy were employed to determine the chemical composition and state of conducting polymer thin films. Layer by layer growth and polymerization of thin films can be showed by shifting of absorption edge using UV-VIS spectroscopy. This conducting polymer fabricated by using MLD method gives the opportunity to develop new hybrid materials by combining inorganic materials in nanoscale.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.305-305
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• 2012

The organic-inorganic hybrid polymer thin films were deposited using the gas phase method which known as molecular layer deposition (MLD). Titaniumchloride (TiCl4) and 1,4-phenylenediamine (PD) were used as monomers to deposit hybrid polymer. Self-terminating nature of TiCl4 and PD reaction were demonstrated by growth rate saturation versus precursors dosing time. Infrared spectroscopic and X-ray photoelectron spectroscopy were employed to determine the chemical composition and state of hybrid polymer thin films. Layer by layer growth was showed by increasing UV-VIS absorption peak of hybrid polymer thin films.

• Journal of the Semiconductor & Display Technology
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• v.19 no.1
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• pp.93-96
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• 2020

Polyimide thin film was prepared by annealing the polyamic acid that was synthesized through co-deposition of diamine and dianhydride. The polyamic acid and polyimide thin film were characterized with FT-IR and HR FE-SEM. The average roughness of the film surface, evaluated with AFM, were 0.385 nm and 0.299 nm after co-deposition, and annealing at 120 ℃ respectively. OLED was passivated with the polyimide layer of 200 nm thickness. While the inorganic passivation layer enhances the WVTR of OLED, the organic passivation layer gives flexibility to the OLED. The in-situ passivation of OLED with organic thin film layer provides the leading technique to develop flexible OLED Display.

• Korean Journal of Materials Research
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• v.12 no.5
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• pp.327-333
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• 2002

In order to obtain the oxidation layer for SiC MOS, the oxide layers by thermal oxidation process with dry and wet method were deposited and characterized. Deposition temperature for oxidation layer was $1100^{\circ}C$~130$0^{\circ}C$ by $O_2$ and Ar atmosphere. The oxide thickness, surface morphology, and interface characteristic of deposited oxide layers were measurement by ellipsometer, SEM, TEM, AFM, and SIMS. Thickness of oxidation layer was confirmed 50nm and 90nm to with deposition temperature at $1150^{\circ}C$ and $1200{\circ}C$ for dry 4 hours and wet 1 hour, respectively. For the high purity oxidation layer, the necessity of sacrificial oxidation which is etched for the removal of the defeats on the wafer after quickly thermal oxidation was confirmed.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.231-231
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• 2010

현재 Cu배선 제조공정에서 전해도금은 Damascene pattern의 Cu filling에 사용되고 있는데, 우수한 특성의 전해도금을 위해서는 step coverage가 우수한 Cu seed layer가 필수적이다. 현재까지 Cu seed layer를 형성하는 방법으로는 ionized physical vapor deposition(I-PVD)이 사용되고 있는데, 22 nm 이후의 소자에서는 step coverage의 한계로 인해 완벽한 Cu filling 어려울 것으로 예상된다. 본 연구에서는 step coverage가 매우 우수한 atomic layer deposition(ALD) 방법으로 Cu seed layer를 증착하고 그 특성을 기존의 PVD 박막과 비교하였다. Ketoiminate 계열의 +2가 Cu 전구체와 $H_2$를 이용하여 ALD Cu 박막을 증착하였는데 exposure, 기판의 온도를 변화시키면서 기판별로 ALD Cu의 최적공정조건을 도출하였다. ALD Cu seed와 PVD Cu seed 위에 약 $1{\mu}m$의 Cu 박막을 전해도금한 후 박막의 두께, 비저항, 미세구조와 함께 pattern filling 특성을 비교하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.166.2-166.2
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• 2014

In this work, we demonstrated a facile and effective method for deposition of metal tetraphenylporphyrin (MTPP) thin film by a combined a thermal evaporation (TE) and atomic layer deposition (ALD). For the deposition of Zn-TPP thin film, Tetraphenylporphyrin (TPP) and diethyl zinc (DEZ) were used as organic and inorganic materials, respectively. Optimum conditions for the deposition of Zn-TPP thin film were established systematically: (1) the exposure time of DEZ as inorganic precursor and (2) the substrate temperature were adjusted, respectively. As a result, we verified that the surface reaction between organic semiconductor (TPP) and metal atom (Zn) was ALD process. In addition, we calculated activation energy by using Arrhenius equation for the substrate temperature versus area change rate of pyrrolic nitrogen. The surface and interface reactions between TPP with Zn were investigated by X-ray photoelectron spectroscopy, Raman spectroscopy, UV-vis spectroscopy, and scanning electron microscopy. These results show a facile and well-controllable fabrication technique for the metal-organic thin film for future electronic applications.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.109-109
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• 2011

CO oxidaition reacitvity of bare and $TiO_2$ -coated NiO/$Ni(OH)_2$ nanoparticles was studied. For the deposition of $TiO_2$ atomic layer deposition was used, and formation of three-dimensional island of $TiO_2$ on NiO/$Ni(OH)_2$ could be identified. Based on the data of X-ray Photoelectron Spectroscopy, we suggest that only $Ni(OH)_2$ existed on the surface, whereas NiO disappeared upon $TiO_2$ deposition. Both CO adsorption and CO oxidation took place on NiO/$Ni(OH)_2$ surfaces under our experimental conditions. CO adsorption was completely suppressed after $TiO_2$ deposition, whereas CO oxidation activity was maintained to large extent. It is proposed that bare NiO can uptake CO under our experimental condition, whereas hydroxylated surface of NiO can be active for CO oxidation.

• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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• 2003.02a
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• pp.129-132
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• 2003

Yttria stabilized zirconia (YSZ) buffer layers were deposited by a metal organic chemical vapor deposition (MOCVD) technique using single liquid source for the application of YBa$_2$Cu$_3$$O_{7-x}$ (YBCO) coated conductor. Y:Zr mole ratio was 0.2:0.8, and tetrahydrofuran (THF) was used as a solvent. The (100) single crystal MgO substrate was used for searching deposition condition. Bi-axially oriented CeO$_2$ and NiO films were fabricated on {100}〈001〉 Ni substrate by the same method and used as templates. At a constant working pressure of 10 Torr, the deposition temperatures (660~80$0^{\circ}C$) and oxygen flow rates (100~500 sccm) were changed to find the optimum deposition condition. The best (100) oriented YSZ film on MgO was obtained at 74$0^{\circ}C$ and $O_2$ flow rate of 300 sccm. For YSZ buffer layer with this deposition condition on CeO$_2$/Ni template, full width half maximum (FWHM) values of the in-plane and out-of-plane alignments were 10.6$^{\circ}$ and 9.8$^{\circ}$, respectively. The SEM image of YSZ film on CeO$_2$/Ni showed surface morphologies without microcrack.k.