• The Transactions of the Korean Institute of Electrical Engineers
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• v.41 no.6
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• pp.633-639
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• 1992

The physical and electrical properties of TiN/TiSiS12T contact barrier were studied. The TiN/TiSiS12T system was formed by rapid thermal anneal in NS12T ambient after the Ti film was deposited on silicon substrate. The Ti film reacts with NS12T gas to make a TiN layer at the surface and reacts with silicon to make a TiSiS12T layer at the interface respectively. It was found that the formation of TiN/TiSiS12T system depends on RTA temperature. In this experiment, competitive reaction for TiN/TiSiS12T system occured above $600^{\circ}C$. Ti-rich TiNS1xT layer and Ti-rich TiSiS1xT layer were formed at $600^{\circ}C$. stable structure TiN layer and TiSiS1xT layer which has CS149T phase and CS154T phase were formed at $700^{\circ}C$. Both stable TiN layer and CS154T phase TiSiS12T layer were formed at 80$0^{\circ}C$. The thickness of TiN/TiSiS12T system was increased as the thickness of deposited Ti film increased.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.41 no.8
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• pp.869-874
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• 1992

The physical and electrical properties of TiN/TiSiS12T bilayer were studied. The TiN/TiSiS12T bilayer was formed by rapid thermal anneal in NHS13T ambient after the Ti film was deposited on silicon substrate. The Ti film reacts with NHS13T gas to make a TiN layer at the surface and reacts with silicon to make a TiSiS12T layer at the interface respectively. It was found that the formation of TiN/TiSiS12T bilayer depends on RTA temperature. In this experiment, competitive reaction for TiN/TiSiS12T bilayer occured above $600^{\circ}C$. Ti-rich TiNS1xT layer and Ti-rich TiSiS1xT layer and Ti-rich TiSiS1xT layer were formed at $600^{\circ}C$. stable structure TiN layer TiSiS12T layer which has CS149T phase and CS154T phase were formed at $700^{\circ}C$. Both stable TiN layer and CS154T phase TiSiS12T layer were formed at 80$0^{\circ}C$. The thickness of TiN/TiSiS12T bilayer was increased as the thickness of deposited Ti film increased.

• Progress in Superconductivity
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• v.14 no.1
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• pp.30-33
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• 2012

We have grown $MgB_2$ superconducting thin films on the SiC buffer layers by means of hybrid physical-chemical vapor deposition (HPCVD) technique. Prior to that, SiC was first deposited on $Al_2O_3$ substrates at various temperatures from room temperature to $600^{\circ}C$ by using the pulsed laser deposition (PLD) method in a vacuum atmosphere of ${\sim}10^{-6}$ Torr pressure. All samples showed a high transition temperature of ~40 K. The grain boundaries of $MgB_2$ samples with SiC layer are greater in amount, compare to that of the pure $MgB_2$ samples. $MgB_2$ with SiC buffer layer samples show interesting change in the critical current density ($J_c$) values. Generally, at both 5 K and 20 K measurements, at lower magnetic field, all $MgB_2$ films deposited on SiC buffer layers have low $J_c$ values, but when they reach higher magnetic fields of nearly 3.5 Tesla, $J_c$ values are enhanced. $MgB_2$ film with SiC grown at $600^{\circ}C$ has the highest $J_c$ enhancement at higher magnetic fields, while all SiC buffer layer samples exhibit higher $J_c$ values than that of the pure $MgB_2$ films. A change in the grain boundary morphologies of $MgB_2$ films due to SiC buffer layer seems to be responsible for $J_c$ enhancements at high magnetic fields.

• Journal of the Korean institute of surface engineering
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• v.30 no.1
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• pp.23-32
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• 1997

The electrolytic boronizing on carbon steels in the mixture of $Na_2B_4O_7$ and NaCl was conducted at 750~$950^{\circ}C$ for 1~6 hours under 0.5A/$\textrm{cm}^2$ current density. The micorostructrure and microheredness of boronized layer was also studien. The effect of the additive such as $CaCl_2$ or NaOH on the formation of boronized layer was also investigated. The boronized layer were composed of two sublayers, i.e., FeB and $Fe_2B$ , which have tooth structure. the average layer thinknesses of the low carbon steel and SM45C boronized at $900^{\circ}C$ for 4hours were 153 and 138 $\mu\textrm{m}$, respectively. The thickness of the twosublayers was significantly increased with increasing boronizing temperature. To obtain a single $Fe_2B$ layer without FeB sublayer, the boronized materials ware homegenized at $950^{\circ}C$ for 4 hours. It was fount that the single layer with a microhardness Hv$\thickapprox$ 1120 -1250 was formed. The calculated activation energies for formation of boronized layer on the low carbon steel and SM45C were 18.7 and 12.6 Kcal/mol, respectively.

• Journal of the Korean institute of surface engineering
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• v.47 no.2
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• pp.93-98
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• 2014

The $Cr_2AlC$ carbides oxidized at 700, 850 and $1000^{\circ}C$ in air from 70 hours up to 360 days. They oxidized according to the reaction; $Cr_2AlC+O_2{\rightarrow}{\alpha}-Al_2O_3+CO(g)$. The scales consisted primarily of the thin, essentially pure $Al_2O_3$ layer and the underlying Al-dissolved $Cr_7C_3$ layer. They grew via the outward diffusion of Al and carbon, and the inward diffusion of oxygen. The oxidation resistance of $Cr_2AlC$ was excellent due to the formation of the protective $Al_2O_3$ layer. Even when $Cr_2AlC$ oxidized at $1000^{\circ}C$ for 360 days, the ${\alpha}-Al_2O_3$ layer was only about 4 ${\mu}m$-thick.

• Journal of Korea Foundry Society
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• v.18 no.6
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• pp.593-603
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• 1998

Commercial ductile iron was coated with titanium and aluminum powders by low pressure plasma spraying and then irradiated with a $CO_2$ laser to produce anti-corrosive TiC composite layer. TiC carbides were precipitated homogeneously in a laser alloyed layer by in-situ reaction between carbon existed in the base metal and titanium with thermal sprayed coating. The formation of gas pores and brittle limited mixing zone with ledeburite microstructure in TiC composite layer were surpressed by the complementary alloying of aluminum. The hardness of TiC composite layer obtained by addition of titanium and aluminum was between 600 and 660 Hv, which was three times as high as the hardness of ferritic ductile iron. From the results of isothermal oxidation at 1123k for 24 hours in air, high temperature oxidation resistance of the TiC composite layer with aluminum was improved and doubled when compared with the TiC composite layer without aluminum.

• Journal of the Korean institute of surface engineering
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• v.50 no.5
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• pp.345-351
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• 2017

A double-layered anti-reflective coating with hydrophilic/abrasion-resistant properties was studied using anatase titanium dioxide($TiO_2$) and silicon oxycarbide($SiO_xC_y$) thin film. $TiO_2$ and $SiO_xC_y$ thin films were sequentially deposited on a glass substrate by DC sputtering and PECVD, respectively. The optical properties were measured by UV-Vis-NIR spectrophotometer. The abrasion-resistance and the hydrophilicity were observed by a taber abrasion tester and a contact angle analyzer, respectively. The $TiO_2/SiO_xC_y$ double-layer thin film had an average transmittance of 91.3%, which was improved by 10% in the visible light region (400 to 800 nm) than that of the $TiO_2$ single-layer thin film. The contact angle of $TiO_2/SiO_xC_y$ film was $6.9^{\circ}$ right after UV exposure. After 9 days from the exposure, the contact angle was $10.2^{\circ}$, which was $33^{\circ}$ lower than that of the $TiO_2$ single-layer film. By the abrasion test, $SiO_xC_y$ film showed a superior abrasion-resistance to the $TiO_2$ film. Consequently, the $TiO_2/SiO_xC_y$ double-layer film has achieved superior anti-reflection, hydrophilicity, and abrasion resistance over the $TiO_2$ or $SiO_xC_y$ single-layer film.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.434-436
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• 2013

Ga-doped ZnO (GZO) was substitutes of the SnO2:F films on soda lime glass substrate in the photovoltaic devices such as CIGS, CdTe and DSSC due to good properties and low cost. However, it was reported that the electrical resistivity of GZO is unstable above $300^{\circ}C$ in air atmosphere. To improve thermal stability of GZO thin films at high temperature above $300^{\circ}C$ an $TiO_2$ thin film was deposited on the top of GZO thin films as a barrier layer by Pulsed Laser Deposition (PLD) method. $TiO_2$ thin films were deposited at various thicknesses from 25 nm to 100 nm. Subsequently, these films were annealed at temperature of $300^{\circ}C$, $400^{\circ}C$, $500^{\circ}C$ in air atmosphere for 20 min. The XRD measurement results showed all the films had a preferentially oriented ( 0 0 2 ) peak, and the intensity of ( 0 0 2 ) peak nearly did not change both GZO (300 nm) single layer and $TiO_2$ (50 nm)/GZO (300 nm) double layer. The resistivity of GZO (300 nm) single layer increased from $7.6{\times}10^{-4}{\Omega}m$ (RT) to $7.7{\times}10^{-2}{\Omega}m$ ($500^{\circ}C$). However, in the case of the $TiO_2$ (50 nm)/GZO (300 nm) double layer, resistivity showed small change from $7.9{\times}10^{-4}{\Omega}m$ (RT) to $5.2{\times}10^{-3}{\Omega}m$ ($500^{\circ}C$). Meanwhile, the average transmittance of all the films exceeded 80% in the visible spectrum, which suggests that these films will be suitable for photovoltaic devices.

• Journal of the Korean Society of Environmental Restoration Technology
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• v.15 no.2
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• pp.77-84
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• 2012

This study suggested the planting model of Zelkova serrata communities in the areas with the warmth index of both 80~100 and $100{\sim}120^{\circ}C{\cdot}month$. Warmth index was calculated with 449 weather points using inverse distance weighted interpolation method. The planting species were selected by correlation analysis between Z. serrata and each species of four or more frequency among the 36 relev$\acute{e}$ surveyed for this study. The result of this study is summarized as follows : Warmth index of Z. serrata communities was among $74{\sim}118^{\circ}C{\cdot}month$. Results of the correlation analysis between Z. serrata and each species observed that the Z. serrata belongs to the tree layer with warmth index of 80~100 and $100{\sim}120^{\circ}C{\cdot}month$. On the other hand, the species of Carpinus laxiflora, Quercus serrata, Prunus sargentii and Platycarya strobilacea appeared only in the tree layer with warmth index of $80{\sim}100^{\circ}C{\cdot}month$. Z. serrata and Styrax japonica appeared in the subtree layer with the warmth index of 80~100 and $100{\sim}120^{\circ}C{\cdot}month$, while Acer pseudosieboldianum, Lindera erythrocarpa, Acer mono, Quercus serrata, etc. appeared in the subtree layer with the warmth index of $80{\sim}100^{\circ}C{\cdot}month$. Z. serrata, Ligustrum obtusifolium, Lindera obtusiloba, Callicarpa japonica and Zanthoxylum schinifolium all appeared in the shrub layer with the warmth index of 80~100 and $100{\sim}120^{\circ}C{\cdot}month$. Lindera erythrocarpa, Orixa japonica, Staphylea bumalda, Akebia quinata and Sorbus alnifolia appeared in the shrub layer with the warmth index of $80{\sim}100^{\circ}C{\cdot}month$ and Styrax japonica and Stephanandra incisa appeared in the shrub layer with the warmth index of $100{\sim}120^{\circ}C{\cdot}month$, The numbers of each species planted in a $100m^2$ area of the Z. serrata community were suggested as follows : five in tree layer, five in subtree layer and nine in shrub layer. The average area of canopy are suggested to be about $86m^2$ for tree layer, $34m^2$ for subtree layer and $34m^2$ for shrub layer.

• Korean Journal of Fisheries and Aquatic Sciences
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• v.1 no.2
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• pp.73-79
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• 1968

The resolving capacities of xanthophyll pigments on thin-layers of Silica Gel, Hyflo super-Cel, and Micro-Cel C with varying concentrations of acetone in petroleum ether as the developing solvent were compared. The results showed that the resolving capacity of Micro-Cel C thin-layer was superior to others and satisfactory for the separation of leaf carotenoids in clearly separated six bands; carotenes, lutein-zeaxanthin, antheraxanthin, violaxanthin, an unidentified band, and neoxanthin, when it was developed with $13\%$ acetone-petroleum ether solution for 15 to 20minutes in an unsaturated chamber. Adhension of Micro-Cel C to glass was adequate without binder. Calcium sulfate used as a binder appeared to inactivate the resolving capacity of Micro-Cel C. Removing an about 0.2cm-wide layer on bo side of thin-layer slide helped to prevent 'edge effect' which gave tailing and faster solvent ascending along the side than the center. An adequate thickness of thin-layer was obtained when a 3 ml aliquot of the suspension in which l0g powdered Micro-Cel C was suspended in 75 ml distilled water was coated on a $2\times20cm$ glass slide.