• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.3
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• pp.401-406
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• 1998

For the applications in optical waveguides and devices, LiNbO_3$ single crystals need to overcome the weakness of optical damage due to the inhomogeneities of laser-induced refractive index. This problem can be solved by doping of Mg in LiNbO_3$ and proton exchange of LiNbO_3$. In this study, to understand the mechanism of optical damage resistance in LiNbO_3$, the changes of lattice defects in LiNbO_3$ caused by MgO doping and acid treatment were observed indirectly by $OH^-$ absorption bands using a FT-IR spectrophotometer. The effect of lattice defects on temperature, heat-treatment and polishing were also investigated. It is shown that MgO doping increases optical damage resistance by generating the defects of $Mg_{Nb}^{2+}$ in the lattice of LiNbO_3$, and that proton exchange by implantation of $H^+$ ion in the hexagonally closest packed oxygen layers on the surface of LiNbO_3$, makes lattice defects, which diffuse into the crystal after heat-treatment above $400^{\circ}C$.

• Proceedings of the Korean Nuclear Society Conference
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• 1995.05a
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• pp.707-712
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• 1995

Grain boundary diffusion plays significant role in the fission gas release, which is one of the crucial processes dominating nuclear fuel performance. Gaseous fission products such as Xe and Kr generated inside fuel pellet have to diffuse in the lattice and in the grain boundary before they reach open space in the fuel rod. In the mean time, the grains in the fuel pellet grow and shrink according to grain growth kinetics, especially at elevated temperature at which nuclear reactors are operating. Thus the boundary movement ascribed to the grain growth greatly influences the fission gas release rate by lengthening or shortening the lattice diffusion distance, which is the rate limiting step. Sweeping fission gases by the moving boundary contributes to the increment of the fission gas release as well. Lattice and grain boundary diffusion processes in the fission gas release can be studied by 'tracer diffusion' technique, by which grain boundary diffusion can be estimated and used directly for low burn-up fission gas release analysis. However, even for tracer diffusion analysis, taking both the intragranular grain growth and the diffusion processes simultaneously into consideration is not easy. Only a few models accounting for the both processes are available and mostly handle them numerically. Numerical solutions are limited in the practical use. Here in this paper, an approximate analytical solution of the lattice and stationary grain boundary diffusion in a polycrystalline solid is developed for the tracer diffusion techniques. This short closed-form solution is compared to available exact and numerical solutions and turns out to be acceptably accurate. It can be applied to the theoretical modeling and the experimental analysis, especially PIE (post irradiation examination), of low burn up fission. gas release.

• Journal of the Korean Magnetics Society
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• v.13 no.6
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• pp.221-225
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• 2003

Effects of annealing temperature on the crystalline and magnetic properties of YIG films grown by solid phase epitaxy. The eptiaxy films were made by annealing Fe-Y-O amorphous films in the air at 550-1050 $^{\circ}C$ which were sputtered on GGG (111) substrates in a conventional rf sputtering system. Crystallization temperature of Fe-Y-O amorphous films on GGG (111) substrate was between 600 and 650 $^{\circ}C$ which is much lower than that Fe-Y-O powder prepared by sol-gel method. Excellent epitaxial growth of YIG films could be conformed by the facts that the diffraction intensity of YIG (888) plane was comparable with that of GGG (888) plane and full width at half maximum of YIG (888) rocking curve was smaller than 0.14$^{\circ}$ when films were annealed at 1050 $^{\circ}C$. It could be seen that it is necessary to anneal the films at higher temperature for an excellent epitaxy because lattice parameter of YIG films were smaller and the peak of YIG (888) plane is higher and narrower with increasing annealing temperature. Films annealed at higher temperature shows M-H loop with perpendicular anisotropy which was due to 0.15％ lattice mismatch between YIG and GGG.

• Applied Chemistry for Engineering
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• v.33 no.3
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• pp.328-334
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• 2022

For the study of environmental application of natural zeolites (NZ) and red mud (RM), which are discharged from various industrial fields, the catalytic ozonation of 2-butaone (methyl ethyl ketone, MEK) was performed using the Mn-loaded NZ prepared according to the Mn content of 1, 3, 5, 7, and 10 wt%. By the addition of Mn to NZ, the BET (Brunaure-Emmett-Teller) specific surface area of Mn/NZ catalysts decreased while the ratio of Mn³⁺/[Mn³⁺+Mn⁴⁺] intensively increased. Besides, the addition of Mn component to NZ increased the ratio of adsorbed oxygen (O_adsorbed) toward lattice oxygen (O_lattice), O_adsorbed/O_lattice from 0.076 of NZ to 0.465 of 10 wt% Mn/NZ according to the amount of Mn. It is known that the proportion of two species, Mn³⁺ and O_adsorbed, would greatly affect the catalytic activity. However, the balancing between the paired species, Mn³⁺ vs. Mn⁴⁺ and O_adsorbed vs. O_lattice might be more essential for the catalytic ozonation of MEK at room temperature. Among the Mn-loaded NZ catalysts, the 3 wt% Mn/NZ showed the best activity for the removal of MEK and ozone. The 5, 7, and 10 wt% Mn/NZ catalysts are slightly inferior to the 3 wt% Mn/NZ. Compared to the pristine NZ, the Mn/NZ catalysts showed better activity for the catalytic ozonation of MEK. In addition, the 3 wt% Mn/NZ was confirmed to have the most available acid sites among them by the analysis of NH₃-TPD (temperature programmed desorption). This might be the major reason for the best catalytic activity of 3 wt% Mn/NZ together with the adjusted distribution ratios of Mn³⁺/Mn⁴⁺ and O_adsorbed/O_lattice. Considering the result of 3 wt% Mn/NZ, the 3 wt% Mn/RM was prepared to perform the catalytic activity for the removal of MEK and ozone, but the efficiency of 3 wt% Mn/RM was significantly lower than that of the 3 wt% Mn/NZ.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.3
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• pp.377-382
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• 1998

GaN epilayers having good adhesion and quality were obtained directly on the sapphire {1120} substrates by the OMVPE method without introducing a buffer layer at the lower temperature. The preferred orientations of epilayers turned out to be <0002> and at least 4 kinds of epilayers were competitively grown. Slight distortions of lattices caused by lattice mismatches between sapphire and GaN were observed at the lattices within 2~3 nm region from the interface. Accordingly, TEM investigation revealed that GaN epilayers could be grown on sapphire {1120} planes without a buffer layer.

• Journal of the Korean Magnetic Resonance Society
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• v.17 no.1
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• pp.24-29
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• 2013

The structural characteristics of 4-coordinate $BO_4$ [B(1)] and 3-coordinate $BO_3$ [B(2)] groups in $BiB_3O_6$ were studied by $^{11}B$ magic angle spinning (MAS) and single-crystal nuclear magnetic resonance (NMR) spectroscopy. The spin-lattice relaxation time in the laboratory frame, $T_1$, for $^{11}B$ decreased slowly with increasing temperature, whereas the spin-lattice relaxation times in the rotating frame, $T_{1{\rho}}$, for B(1) and B(2), which differed from $T_1$, were nearly constant. Further, $T_{1{\rho}}$ for B(1) and B(2) showed very similar trends, although the $T_{1{\rho}}$ value of B(2) was shorter than that of B(1). The 3-coordinate $BO_3$ and 4-coordinate $BO_4$ were distinguished by $^{11}B$ MAS NMR spectrum and $T_{1{\rho}}$.

• Journal of the Korean institute of surface engineering
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• v.36 no.2
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• pp.135-140
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• 2003

The difference in lattice parameter and thermal expansion coefficient between GaN and Si which results in many defects into the grown GaN is larger than that between GaN and sapphire. In order to obtain high quality GaN films on Si substrate, it is essential to understand growth characteristics of GaN. In this study, GaN layers were grown on Si(111) substrates by MOCVD at three different GaN growth temperatures ($900^{\circ}C$, $1,000^{\circ}C$ and $1,100^{\circ}C$), using AlN and LT-GaN buffer layers. Using TEM, we carried out the comparative investigation of growth characteristics of GaN by characterizing lattice coherency, crystallinity, orientation relationship and defects formed (transition region, stacking fault, dislocation, etc). The localized region with high defect density was formed due to the lattice mismatch between AlN buffer layer and GaN. As the growth temperature of GaN increases, the defect density and surface roughness of GaN are decreased. In the case of GaN grown at $1,100^{\circ}$, growth thickness is decreased, and columns with out-plane misorientation are formed.

• The Journal of the Petrological Society of Korea
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• v.21 no.2
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• pp.249-261
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• 2012

Olivine is a dominant mineral in the upper mantle and is elastically very anisotropic. When olivine is deformed under stress at high pressure and high temperature, lattice preferred orientation (LPO) is formed. It is known that the LPO of olivine is affected by water, stress, and pressure. In this paper, I reviewed the papers dealing with the effects of water, stress, and pressure on the LPO of olivine, summarized the papers on the LPOs of olivine in natural mantle rocks, and discussed its implications for seismic anisotropy in the upper mantle. In addition, I also described four types of LPOs of orthopyroxene recently found in natural spinel lherzolite.

• Journal of the Korean Magnetics Society
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• v.3 no.1
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• pp.13-17
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• 1993

We have studied $CuF_{2}.2H_{2}O$ using $^{1}H$ and $^{19}F$ pulsed nuclear magnetic resonance at 30 MHz. From the data of lineshapes, the spin-lattice relaxation times ($T_1$) and the spin echo decay times, lattice dynamics in the structure is investigated. $T_1$ data from both $^{1}H$ and $^{19}F$ NMR indicate that spin-lattice relaxation is dominated by the paramagnetic ion centers at the Cu sites. The lineshapes at room temperature appear to be strongly affected by exchange narrowing and motional narrowing.

• Journal of the Korean Society for Heat Treatment
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• v.20 no.4
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• pp.187-194
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• 2007

A transmission electron microscope (TEM) investigation has been performed on the precipitation of $L2_1$-type $Ni_2AlTi$ phase in B2-ordered NiAl system. The hardness after solution treatment is high in NiAl-Ti alloys suggesting the large contribution of solid solution strengthening in this alloy system. However, the amount of age hardening is not large as compared to the large microstructural variations during aging. At the beginning of aging, the $L2_1$-type $Ni_2AlTi$ precipitates keep a lattice coherency with the NiAl matrix. By longer periods of aging $Ni_2AlTi$ precipitates lose their coherency and change their morphology to the globular ones surrounded by misfit dislocations. Misfit dislocations, which are observed on {100} planes of H-precipitates have the Burgers vector of a <100> with a pure edge type. The lattice misfits of NiAl-$Ni_2AlTi$ system is estimated from the spacings of misfit dislocations to be 1.1% at 1273 K. The lattice misfits decrease with increasing aging temperature in this system.