• KSCE Journal of Civil and Environmental Engineering Research
• /
• v.30 no.4A
• /
• pp.353-359
• /
• 2010

Cementitious matrix based composites are vulnerable to the drying shrinkage crack during the curing process. In this study, the drying shrinkage induced fracture behavior of the fiber reinforced concrete is simulated and the effects of the fiber reinforcement conditions on the fracture characteristics are analysed. The numerical model is composed of conduit elements and rigid-body-spring elements on the identical irregular lattice topology, where the drying shrinkage is presented by the coupling of nonmechanical-mechanical behaviors handled by those respective element types. Semi-discrete fiber elements are applied within the rigid-body-spring network to model the fiber reinforcement. The shrinkage parameters are calibrated through the KS F 2424 free drying shrinkage test simulation and comparison of the time-shrinkage strain curves. Next, the KS F 2595 restrained drying shrinkage test is simulated for various fiber volume fractions and the numerical model is verified by comparison of the crack initiating time with the previous experimental results. In addition, the drying shrinkage cracking phenomenon is analysed with change in the length and the surface shape of the fibers, the measurement of the maximum crack width in the numerical experiment indicates the judgement of the crack controlling effect.

• Korean Journal of Crystallography
• /
• v.3 no.2
• /
• pp.120-128
• /
• 1992

Single crysals of BaTiO3 were grown by TSSG technique at various cooling rates. Morpolo girts, defects and domain structures of the grown crystals were investigated. At the cooling rates below 0.5℃/hr, equant single crystals were obtained and the 11111 faces were dominantly developed. If the cooling rate was much faster or if the vortical temperature gradient in the so lotion was very large, the solution became unstable and the needle formed BasTil04 o crystals were precipitated. Two sets of parallel lamella domains are arranged perpendicular to each other and the irregularly shaped boundaries are fixed between them. These sets of domains show remarkable orientation contrast in x-ray topography. Heating the crystal above 127℃, the phase transition from tetragonal to cubic occurs. The phase transition front (PTF) moves in the direction of temperature gradient. Domains in the tetragonal phase are successively rearranged and regular strain patterns appear in the cubic phase. The habit plane of PTF in BaTi03 is found to deviate from a l1101 lattice plane by app roximately 9°.

• Korean Journal of Materials Research
• /
• v.28 no.10
• /
• pp.539-543
• /
• 2018

We report the structural, morphological and magnetic properties of the $Ni_{70}Mn_{30}$ alloy prepared by Planetary Ball Mill method. Keeping the milling time constant for 30 h, the effect of different ball milling speeds on the synthesis and magnetic properties of the samples was thoroughly investigated. A remarkable variation in the morphology and average particle size was observed with the increase in milling speed. For the samples ball milled at 200 and 300 rpm, the average particle size and hence magnetization were decreased due to the increased lattice strain, distortion and surface effects which became prominent due to the increase in the thickness of the outer magnetically dead layer. For the samples ball milled at 400, 500 and 600 rpm however, the average particle size and hence magnetization were increased. This increased magnetization was attributed to the reduced surface area to volume ratio that ultimately led to the enhanced ferromagnetic interactions. The maximum saturation magnetization (75 emu/g at 1 T applied field) observed for the sample ball milled at 600 rpm and the low value of coercivity makes this material useful as soft magnetic material.

• Journal of Powder Materials
• /
• v.27 no.2
• /
• pp.146-153
• /
• 2020

The co-doping effect of aliovalent metal ions such as Mg²⁺, Ca²⁺, Sr²⁺, Ba²⁺, and Zn²⁺ on the photoluminescence of the Y₂O₃:Eu³⁺ red phosphor, prepared by spray pyrolysis, is analyzed. Mg²⁺ metal doping is found to be helpful for enhancing the luminescence of Y₂O₃:Eu³⁺. When comparing the luminescence intensity at the optimum doping level of each Mg²⁺ ion, the emission enhancement shows the order of Zn²⁺ ≈ Ba²⁺ > Ca²⁺ > Sr³⁺ > Mg²⁺. The highest emission occurs when doping approximately 1.3% Zn²⁺, which is approximately 127% of the luminescence intensity of pure Y₂O₃:Eu³⁺. The highest emission was about 127% of the luminescence intensity of pure Y₂O₃:Eu³⁺ when doping about 1.3% Zn²⁺. It is determined that the reason (Y, M)₂O₃:Eu³⁺ has improved luminescence compared to that of Y₂O₃:Eu³⁺ is because the crystallinity of the matrix is improved and the non-luminous defects are reduced, even though local lattice strain is formed by the doping of aliovalent metal. Further improvement of the luminescence is achieved while reducing the particle size by using Li₂CO₃ as a flux with organic additives.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.13 no.12
• /
• pp.989-995
• /
• 2000

G $e_{1-x}$ S $n_{x}$G $e_{1-y}$S $n_{y}$ is a very promising material for the high-speed device due to the fact that electron and hole mobilities for the strained G $e_{1-x}$ S $n_{x}$G $e_{1-y}$S $n_{y}$ are greatly enhanced. Because G $e_{1-x}$ S $n_{x}$G $e_{1-y}$S $n_{y}$ has a direct band gap for the proper combination of x and y, it can be applied to the optoelectronic device. Therefore, the study of the electrical property for G $e_{1-x}$ S $n_{x}$G $e_{1-y}$S $n_{y}$(001) with a direct energy gap is needed. G $e_{1-x}$ S $n_{x}$ layer can not be grown thickly due to the large difference of lattice constants. This fact prefers the structure of the device where electrons and holes move in the plane direction. The transverse mobilities of electron and hole for G $e_{0.8}$S $n_{0.2}$Ge(001) are 2~3 times larger than those for Ge/Ge/ sub0.8/S $n_{0.2}$(001). Therefore, G $e_{0.8}$S $n_{0.2}$Ge(001) is expected to be better than Ge/G $e_{0.8}$S $n_{0.2}$(001) for the development of the high-speed device.h-speed device.device.h-speed device. device.

• Korean Journal of Materials Research
• /
• v.8 no.7
• /
• pp.591-595
• /
• 1998

In this work, the freestanding GaN single crystalline substrates without cracks were grown by hydride vapor phase epitaxy (HVPE) and its some properties were investigated. The GaN substrate, having a current maximum size of 350 $\mu\textrm{m}$-thickness and 100$\textrm{mm}^2$ area, were obtained by HVPE growth of thick film GaN on sapphire substrate and subsequent mechanical removal of the sapphire substrate. A lattice constant of $C_o$= 5.18486 $\AA$ and a FWHM of DCXRD was 650 arcsec for the single crystalline GaN substrate. The low temperature PL spectrum consist of three excitonic emission and a deep D- A pair recombination at 1.8eV. The Raman E, (high) mode frequency was 567$cm^{-1}$ which was the same as that of strain free bulk single crystals. The Hall mobility and carrier concentration was 283$cm^3$<\ulcornerTEX>/ V.sand 1.1$\times$$10^{18}cm^{-3}$, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.11a
• /
• pp.414-414
• /
• 2008

Vertically well-aligned Ga-doped ZnO nanorods with different Ga contents were grown by thermal evaporation on a ZnO template. The Ga-doped ZnO nanorods synthesized with 50 wt % Ga with respect to the Zn content showed maximum compressive stress relative to the ZnO template, which led to a rapid growth rate along the c-axis due to the rapid release of stored strain energy. A further increase in the Ga content improved the conductivity of the nanorods due to the substitutional incorporation of Ga atoms in the Zn sites based on a decrease in lattice spacing. The p-n diode structure with Ga-doped ZnO nanorods, as a n-type, displayed a distinct white light luminescence from the side-view of the device, showing weak ultraviolet and various deep-level emissions.

• Journal of Magnetics
• /
• v.20 no.3
• /
• pp.229-240
• /
• 2015

In this study, nanocrystalline ferrite powders with the composition $Ni_{0.5}Zn_{0.5}Fe_2O_4$ were prepared by the autocombustion method. The obtained powders were sintered at $800^{\circ}C$, $900^{\circ}C$ and $1,000^{\circ}C$ for 4 h in air atmosphere. The as-prepared and the sintered powders were characterized by X-ray diffraction (XRD), Fourier transform infrared (FT-IR) spectroscopy, and magnetization studies. An increase in the crystallite size and a slight decrease in the lattice constant with sintering temperature were observed, whereas microstrain was observed to be negative for all the samples. Two significant absorption bands in the wave number range of the $400cm^{-1}$ to $600cm^{-1}$ have been observed in the FT-IR spectra for all samples which is the distinctive feature of the spinel ferrites. The force constants were found to vary with sintering temperature, suggesting a cation redistribution and modification in the unit cell of the spinel. The M-H loops indicate smaller coercivity, which is the typical nature of the soft ferrites. The observed variation in the saturation magnetization and coercivity with sintering temperature has been attributed to the role of surface, inhomogeneous cation distribution, and increase in the crystallite size.

• Progress in Superconductivity
• /
• v.10 no.1
• /
• pp.23-28
• /
• 2008

We report refinement of crystalline boron by an attrition ball milling system and the superconducting properties of the $MgB_2$ pellets prepared from the refined boron. In this work, we have conducted the ball milling with only crystalline boron powder, in order to improve homogeneity and control the grain size of the $MgB_2$ that is formed from it. We observed that the crystalline responses in the ball-milled boron became broader and weaker when the ball-milling time was further increased. On the other hand, the $B_{2}O_{3}$ peak became stronger in the powders, resulting in an increase in the amount of MgO within the $MgB_2$ volume. The main reason for this is a greater oxygen uptake. From the perspective of the superconducting properties, however, the sample prepared from boron that was ball milled for 5 hours showed an improvement of critical current density ($J_c$), even with increased MgO phase, under an external magnetic field at 5 and 20 K.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2011.02a
• /
• pp.59-59
• /
• 2011

We will report atomically sharp epitaxial growth of $Bi_2Se_3$ three-dimensional topological insulator films on Si(111) substrate with molecular beam epitaxy (MBE). It was achieved by employing two step growth temperatures to prevent any formation of second phase, like as $SiSe_2$ clusters, between $Bi_2Se_3$ and Si substrate at the early stage of growth. The growth rate was determined completely by Bi flux and the Bi:Se flux ratio was kept ~1:15. The second-phase-free atomically sharp interface was verified by RHEED, TEM and XRD. Based on the RHEED analysis, the lattice constant of $Bi_2Se_3$ relaxed to its bulk value during the first quintuple layer implying the absence of strain from the substrate. Single-crystalline XRD peaks of $Bi_2Se_3$ were observed in films as thin as 4 QL. TEM shows full epitaxial structure of $Bi_2Se_3$ film down to the first quintuple layer without any second phases. This growth method was used to grow high quality epitaxial $Bi_2Se_3$ films from 3 QL to 3600 QL. The magneto-transport properties of these thin films show a robust 2D surface state which is thickness independent.