• 제어로봇시스템학회:학술대회논문집
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• 1992.10b
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• pp.425-429
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• 1992

Point sets in the Euclidean and digital planes are discussed. The local necessary and sufficient conditions are suggested for pointed lattice extraction from these sets are presented. A number of theorems and corollaries are given. The regular and "almost" regular point sets are studied. The results can be used in automatic control of textured textile images by both general and multiprocessing systems.g systems.

• Progress in Superconductivity
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• v.9 no.2
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• pp.140-145
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• 2008

We report on the Josephson vortex dynamics in $Bi_2Sr_2CaCuO_{8+\delta}$ natural Josephson junctions by c-axis tunneling measurements. Beside the quasiparticle branches in the current-voltage characteristics, a new set of multiple branches, referred to as Josephson-vortex-flow branches (JVFBs), are observed. The JVFBs emerge in an in-plane magnetic field above $H_0\;=\;{\Phi}_0/{\gamma}s^2$ and show highly hysteretic behavior, which can be explained in terms of the recently proposed dynamic-phase-separation model. In this work we examined the effect on the JVFBs by the presence of pancake vortices generated as the external magnetic field was applied slightly tilted from the in-plane direction. JVFBs were found to become larger and prominent with increasing pancake vortex density as the tilt angle increased, which were presumably caused by slowing down of a Josephson vortex lattice in the presence of pancake vortices.

• Journal of the Korean Magnetics Society
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• v.13 no.6
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• pp.221-225
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• 2003

Effects of annealing temperature on the crystalline and magnetic properties of YIG films grown by solid phase epitaxy. The eptiaxy films were made by annealing Fe-Y-O amorphous films in the air at 550-1050 $^{\circ}C$ which were sputtered on GGG (111) substrates in a conventional rf sputtering system. Crystallization temperature of Fe-Y-O amorphous films on GGG (111) substrate was between 600 and 650 $^{\circ}C$ which is much lower than that Fe-Y-O powder prepared by sol-gel method. Excellent epitaxial growth of YIG films could be conformed by the facts that the diffraction intensity of YIG (888) plane was comparable with that of GGG (888) plane and full width at half maximum of YIG (888) rocking curve was smaller than 0.14$^{\circ}$ when films were annealed at 1050 $^{\circ}C$. It could be seen that it is necessary to anneal the films at higher temperature for an excellent epitaxy because lattice parameter of YIG films were smaller and the peak of YIG (888) plane is higher and narrower with increasing annealing temperature. Films annealed at higher temperature shows M-H loop with perpendicular anisotropy which was due to 0.15％ lattice mismatch between YIG and GGG.

• Computational Structural Engineering : An International Journal
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• v.1 no.2
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• pp.107-116
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• 2001

The present paper investigates the nonlinear behavior of reinforced concrete shear walls with a crank based on a finite element analysis. The loading type is a horizontal cyclic one such as earthquake loads. Experiments of the shear walls with and without cranks, performed previously to see flow the behavior changes depending on the crank, are compared with the results obtained from the finite element analysis. The finite element analysis is based on an isoparametric degenerated shell formulation. The nonlinear constitutive equations fur concrete are modeled adopting the formulation based on a concept of Ring Typed-Lattice Model. The experiments indicate that the shear walls with a crank have low stiffness and relatively low carrying capacity compared with an ordinary plane shear wall without cranks and that they are more ductile, and the tendency is a1so confirmed based on the finite element analysis. Moreover, a good agreement between the experiments and analyses is obtained, accordingly, it is confined that the present numerical analysis scheme based on the Lattice Model is a powerful one to evaluate the behavior of reinforced concrete shear walls with cranks and without cranks.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.11 no.7
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• pp.1282-1290
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• 2000

The LHCP circularly polarized antenna operating at the satellite broadcast receiving band is developed by employing the sequential-rotation technique in which each truncated-corner patch square element is arranged in the triangular lattice type. Antenna designed with sequentially rotated technique of triangular lattice type has the effect of improved axial-ratio bandwidth, cross-polarization etc., and the degradation of radiation pattern can be reduced significantly by minimizing the radiation loss of feeding line structure. Characteristics of antenna designed is satisfied with specifications of array antenna for DBS that is -27 dB of side lobe level and -20 dB of cross-polarized level at $\Phi$=45$^{\circ}$ plane.

• Journal of the Korean institute of surface engineering
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• v.36 no.2
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• pp.135-140
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• 2003

The difference in lattice parameter and thermal expansion coefficient between GaN and Si which results in many defects into the grown GaN is larger than that between GaN and sapphire. In order to obtain high quality GaN films on Si substrate, it is essential to understand growth characteristics of GaN. In this study, GaN layers were grown on Si(111) substrates by MOCVD at three different GaN growth temperatures ($900^{\circ}C$, $1,000^{\circ}C$ and $1,100^{\circ}C$), using AlN and LT-GaN buffer layers. Using TEM, we carried out the comparative investigation of growth characteristics of GaN by characterizing lattice coherency, crystallinity, orientation relationship and defects formed (transition region, stacking fault, dislocation, etc). The localized region with high defect density was formed due to the lattice mismatch between AlN buffer layer and GaN. As the growth temperature of GaN increases, the defect density and surface roughness of GaN are decreased. In the case of GaN grown at $1,100^{\circ}$, growth thickness is decreased, and columns with out-plane misorientation are formed.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.38 no.4
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• pp.357-363
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• 2014

The electrolyte wetting phenomena in the electrode of lithium ion battery is studied numerically using a multiphase lattice Boltzmann method (LBM). When a porous electrode is compressed during roll-pressing process, the porosity and thickness of the compressed electrode are changed, which can affect its wettability. In this study, the change in electrolyte distribution and degree of saturation as a result of varying the compression ratio are investigated with two-dimensional LBM approach. We found that changes in the electrolyte transport path are caused by a reduction in through-plane pore size and result in a decrease in the wettability of the compressed electrode.

• Journal of the Korean Ceramic Society
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• v.30 no.3
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• pp.206-214
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• 1993

Coherent precipitation of Zn3P2 during Zn diffusion in a GaInAsP/InP heterostructure was studied using high-resolution transmission electron microscopy. Zn-diffusion-induced intermixing of Ga and In across the GaInAsP/InP heterointerface provided a Ga-mixed InP region which was nearly lattice-matched with Zn3P2 crystal and thus allowed thecoherent precipitation of Zn3P2. The Zn3P2 precipitates were preferentially nucleated at stacking faults which were formed to relax interfacial strain built up by the intermixing. The precipitates were grown to planar epitaxial layer along (100) plane in the lattice-matched region. The TEM images and diffraction pettern revealed that the tetragonal Zn3P2 crystals were coherently matched to the fcc structured GaInP matrix by the {{{{ SQRT {2} $\times$ SQRT {2} $\times$2 }} arrangement. The precipitation reaction of Zn3P2 was explained by an atomic migration model based on the kick-out mechanism.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.620-620
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• 2013

When $MoS_2$ is thinned to single layer (1L), photoluminescence (PL) quantum yield drastically increases due to emergence of direct band gap. A recent theory predicts that the electronic structure of 1L $MoS_2$ is very sensitive to its lattice constants. We investigated the response of 1L $MoS_2$ to biaxial tensile strain using spatially resolved PL and Raman spectroscopy. Changes in the lattice constants were monitored by the Raman frequency of the in-plane ($E^1{_2g}$) mode. Systematic correlations between PL and Ramanspectral features, revealed in the preliminary results, will be further tested with samples on other substrates and against thermal stress. The results will also be discussed in regard to the theory which predicts that 1L $MoS_2$ becomes an indirect semiconductor at small tensile strain and turns metallic when further extended.

• Journal of Magnetics
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• v.17 no.1
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• pp.6-8
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• 2012

M$\ddot{o}$ssbauer spectra of hexagonal $BaFe_{12}O_{19}$ single crystals were studied at various temperatures (4-300 K). It was found that the spin states in Fe atoms were parallel to the ${\gamma}$-ray's direction into a single crystal along the caxis. The location of the Fe ion in the 2b site is unusual in an oxide structure and has strong anisotropic lattice vibrations. Moreover, at room temperature, the zero absorption lines of the Fe ions at the 2b site were observed due to fast diffusion motion in a double well atomic potential. The two Fe ions of the single crystal mainly enter into the sites in the mirror plane of the trigonalbipyramidal structure.