• Journal of Periodontal and Implant Science
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• v.52 no.4
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• pp.338-350
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• 2022

Purpose: Various studies have investigated 3-dimensional (3D)-printed implants using Ti6Al-4V powder; however, multi-root 3D-printed implants have not been fully investigated. The purpose of this study was to explore the stability of multirooted 3D-printed implants with lattice and solid structures. The secondary outcomes were comparisons between the 2 types of 3D-printed implants in micro-computed tomographic and histological analyses. Methods: Lattice- and solid-type 3D-printed implants for the left and right mandibular third premolars in beagle dogs were fabricated. Four implants in each group were placed immediately following tooth extraction. Implant stability measurement and periapical X-rays were performed every 2 weeks for 12 weeks. Peri-implant bone volume/tissue volume (BV/TV) and bone mineral density (BMD) were measured by micro-computed tomography. Bone-to-implant contact (BIC) and bone area fraction occupancy (BAFO) were measured in histomorphometric analyses. Results: All 4 lattice-type 3D-printed implants survived. Three solid-type 3D-printed implants were removed before the planned sacrifice date due to implant mobility. A slight, gradual increase in implant stability values from implant surgery to 4 weeks after surgery was observed in the lattice-type 3D-printed implants. The marginal bone change of the surviving solid-type 3D-printed implant was approximately 5 mm, whereas the value was approximately 2 mm in the lattice-type 3D-printed implants. BV/TV and BMD in the lattice type 3D-printed implants were similar to those in the surviving solid-type implant. However, BIC and BAFO were lower in the surviving solid-type 3D-printed implant than in the lattice-type 3D-printed implants. Conclusions: Within the limits of this preclinical study, 3D-printed implants of double-rooted teeth showed high primary stability. However, 3D-printed implants with interlocking structures such as lattices might provide high secondary stability and successful osseointegration.

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1590-1592
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• 1999

We have fabricated good quality superconducting $YBa_2Cu_3O_{7-{\delta}}$ thin films on Hastelloy(Ni-Cr-Mo alloys) with $CeO_2$ buffer layers by in-situ pulsed laser deposition in a multi-target processing chamber. Using one of electrical properties of YBCO superconducting which the resistance approaches to zero dramatically on transition temperature, we have researched to make power transmission line, we have deposited YBCO thin film on flexible metallic substrate. However, it is difficult to make films on flexible metallic substrates due to both interdiffusion problem between metallic substrate and superconducting layer and non-crystallization of YBCO on amorphous substrate. From early research, two ways-using textured metallic substrate and buffer layer-were proposed to overcome theses difficulties. We have chosen $CeO_2$ as a buffer layer which has cubic structure of $5.41{\AA}$ lattice parameter and only 0.2% of lattice mismatch with $3.82{\AA}$ of a-axis lattice parameter of YBCO on (110) direction of $CeO_2$. In order to enhance the crystallization of YBCO films on metallic substrates we deposited $CeO_2$ buffer layers at varying temperature $700^{\circ}C$ to $800^{\circ}C$ and $O_2$ pressure. By X-ray diffraction, we found that each domination of (200) and (111) orientations were strongly relied upon the deposition temperature in $CeO_2$ layer and the change of the domination of orientation affects the crystallization of YBCO upper layer.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.17 no.1
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• pp.35-40
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• 2007

Cobalt ($Co^{2+}$) doped yttria stabilized cubic zirconia (YSZ, $Y_2O_3\;:\;25{\sim}50wt%$) single crystals grown by a skull melting method were heat-treated in $N_2\;at\;1000^{\circ}C$ for 5 hrs. The reddish brown single crystals were changed into either violet or blue color, respectively. Before and after heat treatment, the Co-doped YSZ crystals cut for wafers (${\phi}6.5{\times}t\;2mm$) and round brilliant (${\phi}10mm$). The optical and structural properties were examined by UV-VIS spectrophotometer and XRD. These results are analyzed absorption by $Co^{2+}\;(^4A_2(^4F)\to{^4P})\;and\;Co^{3+}$, change of energy gap and lattice parameter.

• Journal of the Korean Vacuum Society
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• v.17 no.2
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• pp.109-112
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• 2008

The miniaturization of device size and submicron process causes serious problems in conventional metallization due to the solubility of silicon and metal at the interface, such as an increasing contact resistance in the contact hole and interdiffusion between metal and silicon. Moreover, the interaction between Cu and Si is so strong and detrimental to the electrical performance of Si even at temperatures below $200^{\circ}C$. Therefore it is necessary to implement a barrier layer between Cu and Si. So we study W-C-N diffusion barrier for prevent Cu diffusion as a function of $N_2$ gas flow and thermal stability. Especially, we also study the W-C-N diffusion barrier for analyzing the change of lattice constants.

• Korean Journal of Materials Research
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• v.21 no.2
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• pp.73-77
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• 2011

Specific heat of a crystal is the sum of electronic specific heat, which is the specific heat of conduction electrons, and lattice specific heat, which is the specific heat of the lattice. Since properties such as crystal structure and Debye temperature do not change even in the superconducting state, the lattice specific heat may remain unchanged between the normal and the superconducting state. The difference of specific heat between the normal and superconducting state may be caused only by the electronic specific heat difference between the normal and superconducting states. Critical temperature, at which transition occurs, becomes lower than $T_{c0}$ under the influence of a magnetic field. It is well known that specific heat also changes abruptly at this critical temperature, but magnetic field dependence of jump of specific heat has not yet been developed theoretically. In this paper, specific heat jump of superconducting crystals at low temperature is derived as an explicit function of applied magnetic field H by using the thermodynamic relations of A. C. Rose-Innes and E. H. Rhoderick. The derived specific heat jump is compared with experimental data for superconducting crystals of $MgCNi_3$, $LiTi_2O_4$ and $Nd_{0.5}Ca_{0.5}MnO_3$. Our specific heat jump function well explains the jump up or down phenomena of superconducting crystals.

• Journal of the Korean Vacuum Society
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• v.15 no.3
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• pp.273-279
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• 2006

This study explored the possibility of porous Si (PS) formed by indirect electrode anodization used for effective isolation material for radio frequency integrated circuits (RFIC). We investigated the effect of current density and reaction time on the porosity size and depth, and X-ray diffraction of bulk Si and porous Si to evaluate the change in lattice parameter. Porosity size and depth usually increases with an increase in the current density and reaction time. PS increases the lattice parameter of Si compared to the bulk Si which causes the compressive stress of around 8 MPa. PS formed by the method is believed to be suitable for isolation material for RFIC because it is simple process as well as good compatibility to Si VLSI process.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.40 no.1
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• pp.47-53
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• 2016

The electrolyte wetting phenomena occurring in the electrode of lithium-ion battery was studied using lattice Boltzmann method (LBM). Recently, lithium-ion batteries are being mixed with small particles on the active material to increase the capacity and energy density during the electrode design stage. The change to the mixing ratio may influence the wettability of electrolyte. In this study, the changes in electrolyte distribution and saturation were investigated according to various mixing ratios of active material. We found that the variations in mixing ratio of active material affect the wetting mechanism, and result in changes to the wetting speed and wettability of electrolyte.

• Journal of the Korean Society for Heat Treatment
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• v.20 no.4
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• pp.187-194
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• 2007

A transmission electron microscope (TEM) investigation has been performed on the precipitation of $L2_1$-type $Ni_2AlTi$ phase in B2-ordered NiAl system. The hardness after solution treatment is high in NiAl-Ti alloys suggesting the large contribution of solid solution strengthening in this alloy system. However, the amount of age hardening is not large as compared to the large microstructural variations during aging. At the beginning of aging, the $L2_1$-type $Ni_2AlTi$ precipitates keep a lattice coherency with the NiAl matrix. By longer periods of aging $Ni_2AlTi$ precipitates lose their coherency and change their morphology to the globular ones surrounded by misfit dislocations. Misfit dislocations, which are observed on {100} planes of H-precipitates have the Burgers vector of a <100> with a pure edge type. The lattice misfits of NiAl-$Ni_2AlTi$ system is estimated from the spacings of misfit dislocations to be 1.1% at 1273 K. The lattice misfits decrease with increasing aging temperature in this system.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.38 no.4
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• pp.357-363
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• 2014

The electrolyte wetting phenomena in the electrode of lithium ion battery is studied numerically using a multiphase lattice Boltzmann method (LBM). When a porous electrode is compressed during roll-pressing process, the porosity and thickness of the compressed electrode are changed, which can affect its wettability. In this study, the change in electrolyte distribution and degree of saturation as a result of varying the compression ratio are investigated with two-dimensional LBM approach. We found that changes in the electrolyte transport path are caused by a reduction in through-plane pore size and result in a decrease in the wettability of the compressed electrode.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.378.1-378.1
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• 2014

In this study, we investigated that the resistance switching characteristics of Nb-doped HfO2 films with increasing Nb doping concentration. The Nb-doped HfO2 based ReRAM devices with a TiN/Nb-doped HfO2/Pt/Ti/SiO2 were fabricated on Si substrates. The Nb-doped HfO2 films were deposited by reactive dc magnetron co-sputtering at $300^{\circ}C$ and oxygen partial ratio of 60% (Ar: 16sccm, O2: 24sccm). Microstructure of Nb-doped HfO2 films and atomic concentration were investigated by XRD, TEM, and XPS, respectively. The Nb-doped HfO2 films showed set/reset resistance switching behavior at various Nb doping concentrations. The process voltage of forming/set is decreased and whereas the initial current level is increased in doped HfO2 films. However, the switching properties of Nb-doped HfO2 were changed above the specific doping concentration of Nb. The change of resistance switching behavior depending on doping concentration was discussed in terms of concentration of non-lattice oxygen and micro-structure of Nb-doped HfO2.