• Title/Summary/Keyword: lateral current

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A New SOI LIGBT Structure with Improved Latch-Up Performance

  • Sung, Woong-Je;Lee, Yong-Il;Park, Woo-Beom;Sung, Man-Young
    • Transactions on Electrical and Electronic Materials
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    • v.2 no.4
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    • pp.30-32
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    • 2001
  • In this paper, a new silicon-on-insulator (SOI) lateral insulated gate bipolar transistor (LIGBT) is proposed to improve the latch-up performance without current path underneath the n$^{+}$ cathode region. The improvement of latch-up performance is verified using the two- dimensional simulator MEDICI and the simulation results on the latch-up current density are 4468 A/cm2 for the proposed LIGBT and 1343 A/$\textrm{cm}^2$ for the conventional LIGBT. The proposed SOI LIGBT exhibits 3 times larger latch-up capability than the conventional SOI LIGBT.T.

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A Research on Lengthening the Life of Warm Forging Die (온간단조금형의 수명연장에 관한 연구)

  • Kim, Sei-Hwan
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.11 no.1
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    • pp.49-54
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    • 2010
  • Rotor pole for AC(alternating current) generator is manufactured through transfer warm forging die. As soon as the material is heated at the warm manufacturing process, it is transferred to the first stage for upsetting work and then to the second stage for lateral extrusion work. The processes at the lateral extrusion work such as die block, die bushing, center punch, and side punch make severe condition and abrasion which leads to shorten the die life. This causes production decrease, long maintenance time, and low level of precision. Research on the die material selection, heat process cycle improvement, electric discharge machining trouble solution, and re-construction of main parts is expected to find a method to lengthen the die life up to 40 - 50%.

An experimental study on constructing MR secondary suspension for high-speed trains to improve lateral ride comfort

  • Ni, Y.Q.;Ye, S.Q.;Song, S.D.
    • Smart Structures and Systems
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    • v.18 no.1
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    • pp.53-74
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    • 2016
  • This paper presents an experimental study on constructing a tunable secondary suspension for high-speed trains using magneto-rheological fluid dampers (referred to as MR dampers hereafter), in the interest of improving lateral ride comfort. Two types of MR dampers (type-A and type-B) with different control ranges are designed and fabricated. The developed dampers are incorporated into a secondary suspension of a full-scale high-speed train carriage for rolling-vibration tests. The integrated rail vehicle runs at a series of speeds from 40 to 380 km/h and with different current inputs to the MR dampers. The dynamic performance of the two suspension systems and the ride comfort rating of the rail vehicle are evaluated using the accelerations measured during the tests. In this way, the effectiveness of the developed MR dampers for attenuating vibration is assessed. The type-A MR dampers function like a stiffness component, rather than an energy dissipative device, during the tests with different running speeds. While, the type-B MR dampers exhibit significant damping and high current input to the dampers may adversely affect the ride comfort. As part of an ongoing investigation on devising an effective MR secondary suspension for lateral vibration suppression, this preliminary study provides an insight into dynamic behavior of high-speed train secondary suspensions and unique full-scale experimental data for optimal design of MR dampers suitable for high-speed rail applications.

Centrifuge modelling of pile-soil interaction in liquefiable slopes

  • Haigh, Stuart K.;Gopal Madabhushi, S.P.
    • Geomechanics and Engineering
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    • v.3 no.1
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    • pp.1-16
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    • 2011
  • Piles passing through sloping liquefiable deposits are prone to lateral loading if these deposits liquefy and flow during earthquakes. These lateral loads caused by the relative soil-pile movement will induce bending in the piles and may result in failure of the piles or excessive pile-head displacement. Whilst the weak nature of the flowing liquefied soil would suggest that only small loads would be exerted on the piles, it is known from case histories that piles do fail owing to the influence of laterally spreading soils. It will be shown, based on dynamic centrifuge test data, that dilatant behaviour of soil close to the pile is the major cause of these considerable transient lateral loads which are transferred to the pile. This paper reports the results of geotechnical centrifuge tests in which models of gently sloping liquefiable sand with pile foundations passing through them were subjected to earthquake excitation. The soil close to the pile was instrumented with pore-pressure transducers and contact stress cells in order to monitor the interaction between soil and pile and to track the soil stress state both upslope and downslope of the pile. The presence of instrumentation measuring pore-pressure and lateral stress close to the pile in the research described in this paper gives the opportunity to better study the soil stress state close to the pile and to compare the loads measured as being applied to the piles by the laterally spreading soils with those suggested by the JRA design code. This test data shows that lateral stresses much greater than one might expect from calculations based on the residual strength of liquefied soil may be applied to piles in flowing liquefied slopes owing to the dilative behaviour of the liquefied soil. It is shown at least for the particular geometry studied that the current JRA design code can be un-conservative by a factor of three for these dilation-affected transient lateral loads.

The optimum design of InGaAsP/InP RWG MQW-LD (InGaAsP/InP RWG MQW-LD의 최적 설계)

  • 하홍춘;오수환;이석정;박윤호;오종환;홍창희
    • Korean Journal of Optics and Photonics
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    • v.7 no.4
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    • pp.375-385
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    • 1996
  • Recently interest in the fabrication of LD operated by low current is gradually increasing as fabrication techniques of MQW-LD are progressed. In this viewpoint, theoretical estimation for decreasing the amount of threshold current will be helpful to design and make LD in case that active layer of conventional bulk type RWG-LD structure is replaced with MQW structure. Therefore, the optimum design condition of RWG MQW-LD was obtained from theoretical analysis in order to operate in the weakly index-guided LD and low threshold current. The lateral effective index step has been obtained in RWG MQW-LD structure. Waveguide mechanism including this index step has been investigated by solving the carrier diffusion equation and lateral wave equation. From these theoretical results, the optimum design condition of RWG MQW-LD have been suggested.

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Allowable Speed of Tilting Car in the Conventional Line (기존선의 선형조건을 고려한 틸팅차량의 허용속도 평가)

  • 유영화;엄주환;엄기영
    • Journal of the Korean Society for Railway
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    • v.6 no.4
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    • pp.246-251
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    • 2003
  • A quantitative analysis on the amounts of cant and lateral displacement of gravitational center due to the introduction of high-speed tilting car was carried out, based on the current alignment of the conventional line. In addition, the maximum allowable speed in curve and the level of improvement in maximum speed of tilting car were evaluated through the comparison with the maximum speed of locomotive. It was found that the tilting car produces an equivalent amount of cant, which corresponds to 47.5 % of current actual cant. This effect could be explained by the fact that 1.34 m, which is the height of gravitational center of tilting car from the rail level, is much lower than that of locomotive and thus guarantees much higher level of safety in curve. The equivalent amount of cant due to the lateral displacement of gravitational center followed by tilting in curve was 2.4 mm. It was small but not enough to be neglected and must be included in calculating the maximum speed in curve. It could be concluded that the 15 % speed-up of the conventional line is reasonable under the current condition of alignment.

Edge Cut Process for Reducing Ni Content at Channel Edge Region in Metal Induced Lateral Crystallization Poly-Si TFTs

  • SEOK, Ki Hwan;Kim, Hyung Yoon;Park, Jae Hyo;Lee, Sol Kyu;Lee, Yong Hee;Joo, Seung Ki
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.16 no.2
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    • pp.166-171
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    • 2016
  • Nickel silicide is main issue in Polycrystalline silicon Thin Film Transistor (TFT) which is made by Metal Induced Lateral Crystallization (MILC) method. This Nickel silicide acts as a defect center, and this defect is one of the biggest reason of the high leakage current. In this research, we fabricated polycrystalline TFTs with novel method called Edge Cut (EC). With this new fabrication method, we assumed that nickel silicide at the edge of the channel region is reduced. Electrical properties are measured and trap state density also calculated using Levinson & Proano method.

InGaAsP/InP Buried-Ridge Waveguide Laser with Improved Lateral Single-Mode Property

  • Oh, Su-Hwan;Kim, Ki-Soo;Kwon, Oh-Kee;Oh, Kwang-Ryong
    • ETRI Journal
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    • v.30 no.3
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    • pp.480-482
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    • 2008
  • A novel InGaAsP/InP buried-ridge waveguide laser diode structure is proposed and demonstrated for use as a single-mode laser. The lateral mode of the proposed device can be controlled by adjusting the composition and thickness of the InGaAsP layer grown over the active region. Stable single-mode operation without kinks or beam-steering is achieved successfully with lateral and transverse in the junction plane even for the device with the ridge width of 9 ${\mu}m$ up to an injection current of 500 mA.

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A novel in-situ vacuu encapsulted lateral field emitter triode (자체적으로 진공을 갖는 수평형 전계 방출 트라이오드)

  • 임무섭;박철민;한민구;최연익
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.33A no.12
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    • pp.65-71
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    • 1996
  • A novel lateral field emitter triode has been designed and fabricated. It has self-vacuum environmets and low turn-on voltage, so that the chief problems of previous field emission devices such as additional vacuum sealing process and high turn-on voltage are settled. An in-situ vaccum encapsulation empolying recessed cavities by isotropic RIE (reactive ion etch) method and an electron beam evaporated molybdenum vacuum seals are implemented to fabricate the new field emitter triode. The device exhibits low turn-on voltage of 7V, stabel current density of 2.mu.A/tip at V$_{AC}$ = 30V, and high transconductance (g$_{m}$) of 1.7$\mu$S at V$_{AC}$ = 22V. The superb device characteristics are probably due to sub-micron dimension device structure and the pencil type lateral cathode tip employing upper and lower LOCOS oxidation.

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Fabrication and electrical characteristic analysis of poly-Si TFT with lateral body (측면 기판 단자를 갖는 다결정 실리콘 박막 트랜지스터의 제작과 전기적 특성 분석)

  • Choi, H.B.;Yoo, J.S.;Kim, C.H.;Han, M.K.
    • Proceedings of the KIEE Conference
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    • 1998.07d
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    • pp.1462-1464
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    • 1998
  • Poly-Si TFT(Thin Film Transistor) is a electronic device that can be applied to the field of large area electronics such as AMLCD. We have fabricated the poly-Si TFT with lateral body terminal that is counter-doped body electrode and investigated the electrical characteristics of it. The lateral body terminal being short with s terminal, we have measured the transfer charac (Vg-ld) and the output characteristic (Vd-ld) fabricated devices. The measured result showe only that leakage current in OFF-state was re and Kink effect in ON-state was suppressed bu that in output characteristic curve the output Id was sustained constantly with the output v Vd in the saturation region.

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