• 한국정밀공학회지
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• 제17권11호
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• pp.191-198
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• 2000

Laser direct patterning of the coated photoresist (PMER-NSG31B) layer was studied to make halftone dots on gravure printing roll. The selective laser hardening of photoresist by Ar-ion laser(wavelength: 333.6~363.8nm) was controlled by the A/O modulator. The coating thickness in the range of 5~11$\mu m$ could be obtained by using the up-down directional moving device along the vertically located roll. The width, thickness and hardness of the hardened lines formed under the laser power of 200~260㎽ and irradiation time of 4.4~6.6 $\mu$sec/point were investigated after developing. The hardened width increased as the coating thickness increased. Though the hardened thickness was changed due to the effect of the developing solution, the hardened layer showed good resistance to the scratching of 2H pencil. Also, the hardened minimum line widths of 10$\mu m$ could be obtained. The change of line width was also found after etching, and the minimum line widths of 6$\mu m$ could be obtained. The hardened lines showed the good resistance to the etching solution. Finally, the experimental data could be applied to make gravure halftone dots using the developed imaging process, successfully.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1995년도 춘계학술대회 논문집
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• pp.58-61
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• 1995

레이저 유기에 대한 GaAs 의 건석에칭에 있어서 기존의 $CCl_4$와CCl$_2$F$_2$ 가스를 에칭하스로 사용하는 대신에 본 연구팀이 새로 개발한 CFCs 대체가스를 사용하여 기존의 가스와의 에칭률과 그 가공된 형태를 비교하였다. 실험은 power 밀도 12.7 MW/$\textrm{cm}^2$에서 27 MW/$\textrm{cm}^2$까지로 가변시키면서 하고 에칭가스의 압력은 260 Torr에서760 Torr 까지 변화를 주면서 하였다. 빔의 주사속도는 8.3$\mu\textrm{m}$/sec에서 80$\mu\textrm{m}$/sec 까지 가변을 시켰다. 그 결과 CHCiF$_2$가스에서의 에칭율(etch rate)은 최대 136$\mu\textrm{m}$/sec이고 aspect ratio 는 2.6 이 됨을 알 수 있었다. 애칭된 형태를 측정하기 위해서 SEM(Scanning Electron Microscopy)을 사용하였으며, 시료 표면의 물질 분석을 위해서 AES(Auger Electron Spectroscopy)를 사용하였다.

• 한국정밀공학회지
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• 제24권2호
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• pp.134-139
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• 2007

Usually nanosecond pulsed laser processing of metal is mainly affected by the thermal ablation. Many studies of the theoretical analysis and modeling to predict the laser ablation of metal are suggested on the basis of the photothermal mechanism at higher laser fluence. In this paper, we investigate the etching depth and laser fluence of laser ablation of copper foils and propose the simplified SSB Model(Srinivasan-Smrtic-Babu model) to study the photothermal effect of nanosecond pulsed laser ablation. The experimental results show that the photothermal ablation of the 355nm DPSS $NdYVO_{4}$ laser is useful to process the copper thin foils.

• 한국레이저가공학회:학술대회논문집
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• 한국레이저가공학회 2006년도 추계학술발표대회 논문집
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• pp.103-107
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• 2006

Decapsulation of EMC(Epoxy Molding Compound) in package device is a method used to inspect inside of device by removing plastic molding. So far, chemical etching and mechanical grinding methods have been used widely. Recently, several works using laser have been carried out. This method has advantages with fast process time and precision than conventional methods because of noncontact process. Also, laser process is a clean process because of removing EMC directly without using toxic chemicals. The wavelength of laser used in this study is 355nm. Key parameters of removing EMC are laser power, scan speed, and number of scans of laser. It if confirmed that laser decapsulation is a useful process to inspect inside a device with a small thermal damage to chip surface.

• 대한기계학회논문집A
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• 제38권9호
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• pp.967-972
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• 2014

우수한 광투과성 및 경도를 지닌 유리는 바이오, 전자, 광학 등의 분야에서 널리 활용되고 있다. 하지만, 유리는 경도가 높고 깨지기 쉬워 일반적으로 특수가공법을 이용하여 가공이 이루어진다. 그 중 레이저는 공구가 불필요하며 가공 속도가 빠르다는 장점을 지니고 있지만 유리의 높은 광투과성 때문에 가공에 적용하기에는 많은 제약이 따른다. 이에 저출력의 나노초 펄스 레이저로 유리 가공을 하기 위하여 간접가공법인 레이저 습식 후면 식각공정을 활용하고자 한다. 기존의 연구들에서는 흡수율이 뛰어난 고가의 단파장 레이저 장비를 주로 사용하였으나 본 연구에서는 범용적인 근적외선 레이저 장비를 활용하여 유리 구조물 제작의 가능성을 실험하였다. 특히 깊은 구조물 제작시 발생하는 문제점을 확인하고 이를 해결하기 위해 초음파 부가 공정을 통한 미세 구조물 제작을 수행하였다.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2006년도 춘계학술대회 논문집
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• pp.667-668
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• 2006

Usually nanosecond pulsing laser ablation of metal is under thermal effect. Many studies of the theoretical analysis and modeling to predict a result of laser ablation of metal are suggested on the basis of the photothermal mechanism. In this paper, we investigate the etching depth and laser fluence of laser ablation of copper films. We proposed the simplified SSB Model(Srinivasan-Smrtic-Babudp model) to study the photothermal effect of nanosecond pulsing laser ablation of copper thin metal. The experimental results were obtained by using the 355nm DPSS $Nd:YVO_4$ laser.

• 한국광학회:학술대회논문집
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• 한국광학회 1990년도 제5회 파동 및 레이저 학술발표회 5th Conference on Waves and lasers 논문집 - 한국광학회
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• pp.69-72
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• 1990

For the effective heat transfering in Lser Diodes, Beam-Lead structure were introduced which is applicable to hybrid Optoelectronic Integrated Circuits. A 5-layer planar structure Laser Diode is fabricated and Beam-Lead is made by Au plating. And carrier was made by etching Si substrate and LD was mounted on a carrier. The thermal resistance was measured and we could certain that Beam-Lead structure behaves well as a heat sink.

• 한국레이저가공학회지
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• 제6권1호
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• pp.33-40
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• 2003

The ablative decomposition mechanism of PMMA(polymethyl methacrylate) and PET(polyethylene terephthalate) with KrF excimer laser(λ : 248nm, pulse duration: 5㎱) is investigated. The UV/Vis spectrometer analysis showed that PMMA is a weak absorber and PET is a strong absorber at the wavelength of 248nm. The results(surface debris, melt, etch depth, etching shape) from drilling and direct writing experiments imply that ablation mechanism of PMMA is dominated by photothermal process, while that of PET is dominated by photochemical process.

• Biotechnology and Bioprocess Engineering:BBE
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• 제10권3호
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• pp.212-217
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• 2005

Desorption/ionization on silicon mass spectrometry (DIOS-MS) is a relatively new laser desorption/ionization technique for mass spectrometry without employing an organic matrix. This present study was carried to survey the experimental factors to improve the efficiency of DIOS-MS through electrochemical etching condition in structure and morphological properties of the porous silicon. The porous structure of silicon structure and its properties are crucial for the better performance of DIOS-MS and they can be controlled by the suitable selection of electrochemical conditions. The fabrication of porous silicon and ion signals on DIOS-MS were examined as a function of silicon orientation, etching time, etchant, current flux, irradiation, pore size, and pore depth. We have also examined the effect of pre- and post-etching conditions for their effect on DIOS-MS. Finally, we could optimize the electrochemical conditions for the efficient performance of DIOS-MS in the analysis of small molecule such as amino acid, drug and peptides without any unknown noise or fragmentation.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.644-647
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• 2001

Amorphous As-Ge-Se-S thin films have been studied with the aim of identifying optimum etching condition which can be used to produce holographic grating structure for use as diffractive optical elements. In this study, holographic gratings have been formed using He-Ne laser(632.8nm), and fabricated by the method of wet etching using NaOH etchant with various concentration(0.26N, 0.33N, 0.40N). The diffraction efficiency was obtained by +1st order intensity of the diffracted beam. The formed grating profiles were observed by atomic force microscope and showed that the expected grating profile could be achieved by controlling the etching time. Over-etching resulted in under-cutting of the grating lines. The highest 1st order diffraction efficiency for these gratings was about 5.05%.