• 제목/요약/키워드: large single grain

검색결과 66건 처리시간 0.029초

Orientation and thickness dependence of magnetic levitation force and trapped magnetic field of single grain YBa2Cu3O7-y bulk superconductors

  • Jung, Y.;Go, S.J.;Joo, H.T.;Lee, Y.J.;Park, S.D.;Jun, B.H.;Kim, C.J.
    • 한국초전도ㆍ저온공학회논문지
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    • 제19권1호
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    • pp.30-35
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    • 2017
  • The effects of the crystallographic orientation and sample thickness on the magnetic levitation forces (F) and trapped magnetic field (B) of single grain YBCO bulk superconductors were examined. Single grain YBCO samples with a (001), (110) or (100) surface were used as the test samples. The samples used for the force-distance (F-d) measurement were cooled at 77 K without a magnetic field (zero field cooling, ZFC), whereas the samples used for the B measurement were cooled under the external magnetic field of a Nd-B-Fe permanent magnet (field cooling, FC). It was found that F and B of the (001) surface were higher than those of the (110) or (100) surface, which is attributed to the higher critical current density ($J_c$) of the (001) surface. For the (001) samples with t=5-18 mm, the maximum magnetic levitation forces ($F_{max}s$) of the ZFC samples were larger than 40 N. About 80% of the applied magnetic field was trapped in the FC samples. However, the F and B decreased rapidly as t decreased below 5 mm. There exists a critical sample thickness (t=5 mm for the experimental condition of this study) for maintaining the large levitation/trapping properties, which is dependent on the material properties and magnitude of the external magnetic fields.

Czochralski법을 이용한 금속 단결정의 성장과 구조적, 전기적 성질에 관한 연구 (The Fabrication of the Single Crystal Wire from Cu Single Crystal Grown by the Czochralski Method and its Physical Properties)

  • 박정훈;차수영;박상언;김성규;조채룡;박혁규;김형찬;정명화;정세영
    • 한국결정학회지
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    • 제16권2호
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    • pp.141-148
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    • 2005
  • It is well known that the general metals have a lot of grain boundaries. The grain boundaries play a negative role to increase the resistivity and to decrease the conductivity. The small resistivity and the large conductivity have been a goal of the material scientists, and no signal noise, perfect signal transfer, and the realization of the real sound are the dream of electronic engineers and audio manias. Generally, oxygen free copper (OFC) and Ohno continuous casting (OCC) copper cables have been used for the purpose of the precise signal transfer and low noise. However they still include a lot of grain boundaries. In our study, we have grown the single crystal by the Czochralski method and succeeded to produce single crystal wires from the crystal in the dimension of $0.5{\times}0.5{\times}2500mm$. The produced wire still possesses very good single crystal properties. We observed the structure of the wire, and measured the resistance and impedance. Glow Discharge Spectrometer (GDS) was used for analyzing the compositions of copper single crystals and commercial copper. Current-Voltage curve, resistance, total harmonic distortion and speaker frequency response were measured for comparing electrical and acoustic properties of two samples.

X-X: Single-Crystalline Si TFTs Fabricated with ${\mu}-Czochralski$ (grain-filter) process

  • Ishihara, R.;Dijk, B.D.van;Wilt, P.Ch. van der;Metselaar, J.W.;Beenakker, C.I.M.
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2002년도 International Meeting on Information Display
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    • pp.159-162
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    • 2002
  • This paper reviews an advanced excimer-laser crystallization technique enabling precise location-control of the individual grains. With the developed ${\mu}$-Czochralski (grain-filter) process, the large grains having a diameter of 6 ${\mu}m$ can be set precisely at predetermined positions. We will also discuss the performance of the single-crystalline Si TFTs that are formed within the location-controlled Si grains. The field-effect mobility for electrons is 430 $cm^2/Vs$ on average, which is well comparable to that of TFTs made with silicon-on-insulator wafers.

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Direct fabrication of a large grain YBCO bulk superconductor without intermediate grinding step

  • Hong, Yi-Seul;Kim, Chan-Joong;Lee, Hee-Gyoun
    • 한국초전도ㆍ저온공학회논문지
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    • 제21권3호
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    • pp.27-31
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    • 2019
  • Large grain YBCO bulk superconductors are fabricated by the top-seeded melt growth (TSMG) or top-seeded infiltration growth (TSIG) method. Both growth methods use at least one of $YBa_2Cu_3O_{7-{\delta}}$, $Y_2BaCuO_5$, $BaCuO_3$ pre-reacted precursor powders. However, the synthesis of the pre-reacted powders includes multiple calcination runs which are cost-bearing and time-consuming. In this work, we report the successful growth of single-domain YBCO bulk superconductors directly by using the powder compact that has been pressed from the mixture of $Y_2O_3$, $BaCuO_3$ and CuO powders without any intermediate grinding step. Single-domain YBCO bulk superconductor has been also prepared by using $Y_2O_3$, $BaO_2$ and CuO powders without intermediate grinding step. Investigations on the trapped magnetic field and microstructure of the melt-processed specimen show that the elimination of the repeated processes of calcinations and pulverization has hardly affected on the crystal growth and the magnetic properties of the grown YBCO bulk superconductors. However, it is thought that the presence of residual carbon affects on the size of Y211 particles in melt-processed YBCO bulk superconductor.

Overlook of current chemical vapor deposition-grown large single-crystal graphene domains

  • Park, Kyung Tae;Kim, Taehoon;Park, Chong Rae
    • Carbon letters
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    • 제15권3호
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    • pp.151-161
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    • 2014
  • Exceptional progress has been made with chemical vapor deposition (CVD) of graphene in the past few years. Not only has good monolayer growth of graphene been achieved, but large-area synthesis of graphene sheets has been successful too. However, the polycrystalline nature of CVD graphene is hampering further progress as graphene property degrades due to presence of grain boundaries. This review will cover factors that affect nucleation of graphene and how other scientists sought to obtain large graphene domains. In addition, the limitation of the current research trend will be touched upon as well.

Study on Grain Boundaries in Single-layer Graphene Using Ultrahigh Resolution TEM

  • Lee, Zong-Hoon
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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    • pp.107-107
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    • 2012
  • Recently, large-area synthesis of high-quality but polycrystalline graphene has been advanced as a scalable route to applications including electronic devices. The presence of grain boundaries (GBs) may be detrimental on some electronic, thermal, and mechanical properties of graphene, including reduced electronic mobility, lower thermal conductivity, and reduced ultimate mechanical strength, yet on the other hand, GBs might be beneficially exploited via controlled GB engineering. The study of graphene grains and their boundary is therefore critical for a complete understanding of this interesting material and for enabling diverse applications. I present that scanning electron diffraction in STEM mode makes possible fast and direct identification of GBs. We also demonstrate that dark field TEM imaging techniques allow facile GB imaging for high-angle tilt GBs in graphene. GB mapping is systematically carried out on large-area graphene samples via these complementary techniques. The study of the detailed atomic structure at a GB in suspended graphene uses aberration-corrected atomic resolution TEM at a low kV.

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(K0.5Na0.5)NbO3-CaZrO3 계에서 입자모양과 입자성장 거동 (Grain Shape and Grain Growth Behavior in the (K0.5Na0.5)NbO3-CaZrO3 System)

  • 이철이;문경석
    • 한국분말재료학회지
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    • 제29권2호
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    • pp.110-117
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    • 2022
  • The grain growth behavior in the (1-x)K0.5Na0.5NbO3-xCaZrO3 (KNNCZ-x) system is studied as a function of the amount of CZ and grain shape. The (1-x)K0.5Na0.5NbO3-xCaZrO3 (KNNCZ-x) powders are synthesized using a conventional solid-state reaction method. A single orthorhombic phase is observed at x = 0 - 0.03. However, rhombohedral and orthorhombic phases are observed at x = 0.05. The grain growth behavior changes from abnormal grain growth to the suppression of grain growth as the amount of CaZrO3 (CZ) increases. With increasing CZ content, grains become more faceted, and the step-free energy increases. Therefore, the critical growth driving force increases. The grain size distribution broadens with increasing sintering time in KNNCZ-0.05. As a result, some large grains with a driving force larger than the critical driving force for growth exhibit abnormal grain growth behavior during sintering. Therefore, CZ changes the grain growth behavior and microstructure of KNN. Grain growth at the faceted interface of the KNNCZ system occurs via two-dimensional nucleation and growth.

EH36 TMCP강의 50mm 1 패스 일렉트로가스 용접부의 조직 및 충격특성 (Microstructures and Impact Properties of 500mm Single Pass Electrogas Weldment for EH36 TMCP steels)

  • 이해우;고대은
    • Journal of Welding and Joining
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    • 제17권3호
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    • pp.96-101
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    • 1999
  • Microstructures and mechanical properties of weldments were studied for EH36 TMCP higher-strength hull steel with electrogas welding jprocess. In case of a newly designed EH36 TMCP steel for large heat input welding process, the Microstructures of HAZ shows more narrow width of grain coarsed region than that of conventional EH36 TMCP weldments, the amount of acicular ferrite, which is beneficial to impact toughness, increased while the amount of grain-boundary ferrite decreased. Charpy V-notched impact tests show that a newly designed EH36 TMCP steel weldment satisfies all the requirement of specifications, especially at the fusion line +2mm where the conventional EH36 TMCP steel fails to exceed the requirement.

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Nearly single crystal, few-layered hexagonal boron nitride films with centimeter size using reusable Ni(111)

  • Oh, Hongseok;Jo, Janghyun;Yoon, Hosang;Tchoe, Youngbin;Kim, Sung-Soo;Kim, Miyoung;Sohn, Byeong-Hyeok;Yi, Gyu-Chul
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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    • pp.286-286
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    • 2016
  • Hexagonal boron nitride (hBN) is a dielectric insulator with a two-dimensional (2D) layered structure. It is an appealing substrate dielectric for many applications due to its favorable properties, such as a wide band gap energy, chemical inertness and high thermal conductivity[1]. Furthermore, its remarkable mechanical strength renders few-layered hBN a flexible and transparent substrate, ideal for next-generation electronics and optoelectronics in applications. However, the difficulty of preparing high quality large-area hBN films has hindered their widespread use. Generally, large-area hBN layers prepared by chemical vapor deposition (CVD) usually exhibit polycrystalline structures with a typical average grain size of several microns. It has been reported that grain boundaries or dislocations in hBN can degrade its electronic or mechanical properties. Accordingly, large-area single crystalline hBN layers are desired to fully realize the potential advantages of hBN in device applications. In this presentation, we report the growth and transfer of centimeter-sized, nearly single crystal hexagonal boron nitride (hBN) few-layer films using Ni(111) single crystal substrates. The hBN films were grown on Ni(111) substrates using atmospheric pressure chemical vapor deposition (APCVD). The grown films were transferred to arbitrary substrates via an electrochemical delamination technique, and remaining Ni(111) substrates were repeatedly re-used. The crystallinity of the grown films from the atomic to centimeter scale was confirmed based on transmission electron microscopy (TEM) and reflection high energy electron diffraction (RHEED). Careful study of the growth parameters was also carried out. Moreover, various characterizations confirmed that the grown films exhibited typical characteristics of hexagonal boron nitride layers over the entire area. Our results suggest that hBN can be widely used in various applications where large-area, high quality, and single crystalline 2D insulating layers are required.

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대면적·단일층·단결정 그래핀의 합성 (Synthesis of large area·single layer/crystalline graphene)

  • 최병상
    • 한국전자통신학회논문지
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    • 제9권2호
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    • pp.167-171
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    • 2014
  • CVD를 이용하여 다결정 및 단결정 Cu 시편에 대한 그래핀의 합성 실험을 수행하였으며, 광학현미경 조직사진과 이미지 분석을 통하여 그래핀의 성장거동과 합성에 대한 특성평가 결과를 제시 하였다. 다결정 Cu 시편의 결정성에 따른 그래핀의 성장에 대한 분석의 결과 그래핀의 성장이 다결정 Cu 시편의 결정에 따라 일정한 방향성을 갖고 성장한다는 것을 알 수 있었으며, 다결정 Cu 시편의 이웃하는 단일 결정 내에서 성장하는 그래핀 형성에 대한 이미지 분석의 결과 단층, 복층, 그리고 3층의 그래핀에 대한 특성 분석이 가능하였다. 또한, (111) 방향을 갖는 단결정 Cu 시편을 이용하여 약 $3mm^2$ 정도의 비교적 넓은 면적을 갖는 고품질의 단일층 단결정 그래핀 합성과 이에 대한 특성평가 결과를 나타내고 있다.