• Progress in Superconductivity
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• 제1권1호
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• pp.14-19
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• 1999

Measurements across single grain boundaries in YBCO thin films and bulk bicrystals have been used to demonstrate the influence of grain boundary structure on the critical current carried across the grain boundary. In particular, we show that one role of grain boundary structure is to change the degree of pinning along the boundary, thereby influencing the critical current. This effect can be used to explain the large difference in critical current density across grain boundaries in thin films compared to that for bulk bicrystal. These differences illustrate the distinction between the intrinsic mechanism of coupling across the grain boundary that determines the maximum possible critical current across a boundary and the measured critical current which is limited by dissipation due to the motion of vortices.

• 한국초전도ㆍ저온공학회논문지
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• 제20권3호
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• pp.5-10
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• 2018

This study presents that various grain boundary junctions are prepared by controlling the seed orientation combined with an artificial hole in a melt process REBCO bulk superconductor. Large grain YBCO superconductors have been fabricated with various grain boundary junctions that the angle between the grain boundary and the <001> axis of Y123 crystal is $0^{\circ}$, $30^{\circ}$ and $45^{\circ}$, respectively. The presence of the artificial hole is beneficial for the formation of clean grain boundary junction and single peak trapped magnetic field profiles have been obtained. Artificial hole makes two growth fronts meet at a point on a periphery of the artificial hole. The presence of artificial hole is not likely to affect on the distribution of Y211 particles. The newly formed <110> facet lines are explained by the formation of new Y123/liquid interface with (010) crystallographic plane.

• Interaction and multiscale mechanics
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• 제4권2호
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• pp.155-164
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• 2011

The lattice strain evolution within polycrystalline solids is influenced by the crystal orientation and grain interaction. For multi-phase polycrystals, due to potential large differences in properties of each phase, lattice strains are even more strongly influenced by grain interaction compared with single phase polycrystals. In this research, the effects of the grain interaction and crystal orientation on the lattice strain evolution in a two-phase polycrystals are investigated. Duplex steel of austenite and ferrite phases with equal volume fraction is selected for the analysis, of which grain arrangement sensitivity is confirmed in the literature through both experiment and simulation (Hedstr$\ddot{o}$m et al. 2010). Analysis on the grain interaction is performed using the results obtained from the finite element calculation based on the model of restricted slip within crystallographic planes. The dependence of lattice strain on grain interactions as well as crystal orientation is confirmed and motivated the need for more in-depth analysis.

• 대한기계학회논문집
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• 제14권6호
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• pp.1533-1541
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• 1990

본 연구에서는 초입자인 CBN단입자와 기존의 연삭입자인 SiC단입자를 연삭입 자로 하고, 경강과 연강의 공작물재료를 단입자로 연삭했을 때의 표면거칠기 특성을 단입자의 절삭현상으로부터 비교 구명하고 CBN입자에 의한 연삭의 경우가 표면거칠기 가 악화하는 원인을 구명함으로써 이것을 토대로 하여 CBN입자의 실용 보편화의 자료 로 삼고자 하였다.

• Progress in Superconductivity
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• 제8권1호
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• pp.8-15
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• 2006

The size of the superconducting domains and the critical current density inside these domains have to be enhanced for most of cryomagnetic applications of melt-textured YBCO bulks. To enlarge the size of the domains we studied the multi-seeding technique based on a well-established procedure for preparing high quality YBCO monoliths using self-made SmBCO seeds. The distance between the seeds was optimised as a result of the investigation of the effects of various seed distances on the characteristics of the grain boundary Junctions. The influences of a-b plane intersections and c-axis misalignments were researched. Thereby, a small range of tolerance of the misorientations between the seed crystals was found. Field mapping was applied to control the materials quality and the superconductor's grain structure was investigated using polarisation microscopy. YBCO function elements with iou. seeds in a line and an arrangement of making type (100)/(100) and (110)/(110) boundary junctions, respectively, were processed. The trapped field profile in both sample types shows single domain behaviour. To demonstrate the potential of the multi-seeding method a ring-shaped sample was processed by placing sixteen seeds in a way to make both (100)/(100) and (110)/(110) grain junctions at the same time. The results up to now are very promising to prepare large single domain melt-textured YBCO semi-finished products in complex shapes.

• Applied Science and Convergence Technology
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• 제26권5호
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• pp.129-132
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• 2017

We report a chemical vapor deposition approach and optimized growth condition to the synthesis of single layer molybdenum disulfide ($MoS_2$). Obtaining large grain size with continuous $MoS_2$ atomically thin films is highly responsible to the growth distance between molybdenum trioxide source and receiving silicon substrate. Experimental results indicate that triangular shape $MoS_2$ grain size could be enlarged up to > 80um with the precisely controlled the source-to-substrate distance under 7.5 mm. Furthermore, we demonstrate fabrication of a memory device by employing poly(methyl methacrylate) (PMMA) as insulating layer. The fabricated devices have a PMMA-$MoS_2$/metal configuration and exhibit a bistable resistance switching behavior with high/low-current ratio around $10^3$.

• 한국전기전자재료학회논문지
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• 제37권1호
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• pp.26-35
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• 2024

Aluminum-induced crystallization (AIC) as a route to reduce the fabrication cost and to obtain polycrystalline Si (p-Si) thin-film of large grain size is a promising alternative of single-crystalline (s-Si) substrate or p-Si thin-film obtained by conventional methods such as solid phase crystallization (SPC) and laser-induced crystallization (LIC). As the AIC process occurs at the interface between a-Si and Al thin-films, there are various process and interface parameters. Also, it directly means that there is a certain parametric window to obtain p-Si of large grain size having uniform crystal orientation. In this article, we investigate the effect of the various process and interface parameters to obtain p-Si of large grain size and uniform crystal orientation from the literature review. We also suggest the potential use of the p-Si as a virtual substrate for the growth of various compound semiconductors in a form of low-dimension as well as thin-film as a way for their monolithic integration on Si.

• 센서학회지
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• 제26권2호
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• pp.122-127
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• 2017

Graphene grown on copper-foil substrates by chemical vapor deposition (CVD) has been attracting interest for sensor applications due to an extraordinary high surface-to-volume ratio and capability of large-scale device fabrication. However, CVD graphene has a polycrystalline structure and a high density of grain boundaries degrading its electrical properties. Recently, processes such as electropolishing for flattening copper substrate has been applied before growth in order to increase the grain size of graphene. In this study, we systemically analyzed the effects of the process condition of electropolishing copper foil on the quality of CVD graphene. We observed that electropolishing process can reduce surface roughness of copper foil, increase the grain size of CVD graphene, and minimize the density of double-layered graphene regions. However, excessive process time can rather increase the copper foil surface roughness and degrade the quality of CVD graphene layers. This work shows that an optimized electropolishing process on copper substrates is critical to obtain high-quality and uniformity CVD graphene which is essential for practical sensor applications.

• 전자공학회논문지A
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• 제30A권6호
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• pp.1-7
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• 1993

After the 1%S-Al metal is deposited, a thin oxide is formed thereon. Then, a single charged Argon(Ar$^{+}$) is ion implanted into the oxide layer, thereby causing the metal grain in the upper surface of the metal layer to become amorphous. Consequently, the grain size will be reduced and the rough surface of the metal layer flattened. However, the remainder of the metal layer beneath the upper surface thereof will still exhibit large grain size and low resistance, because the Argon ion is only implanted to characterized by a dual-sized grain structure which served to reduce interlayer stress, thereby decreasing the rate of stress migration, and to lower the resistivity of the metal line, thereby enhancing the electromigration characteristic thereof. Experiments have shown that the metal line exhibits a metal migration rate which is approximately 700% less than the control group and a standard deviation which is approximately 200% less than these group.p.

• 한국초전도ㆍ저온공학회논문지
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• 제21권4호
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• pp.19-23
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• 2019

A large grain YBCO bulk superconductor is fabricated by the top-seeded melt growth (TSMG) method. In the TSMG process, the seed crystal is placed on the top surface of a partially melted compact and therefore the seed crystal is frequently tilted during the melt process due to intrinsic unstable nature of Y211 particle +liquid phase mixture. In this work, we report the successful growth of single-domain YBCO bulk superconductors by a bottom-seeded melt growth (BSMG) method. Investigations on the trapped magnetic field and the microstructures of the synthesized specimens show that a bottom-seeded melt growth method has hardly affected on the crystal growth behavior, the microstructure development and the magnetic properties of the large grain YBCO bulk superconductors. The bottom-seeded melt growth method is clearly beneficial for the stable control of seed orientation through the melt process for the fabrication of a large grain YBCO bulk superconductor.