• 한국초전도학회:학술대회논문집
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• 한국초전도학회 2003년도 High Temperature Superconductivity Vol.XIII
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• pp.45-45
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• 2003

• Progress in Superconductivity
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• 제2권2호
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• pp.81-85
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• 2001

Uniformity of critical currents of YBa$_2$Cu$_3$O$_{7}$ step-edge Josephson junctions on SrTiO$_3$(100) substrates have been studied at various step-line angles. 15 identical junctions were made in series on each substrate that has a long straight step-edge line. Step-line angles studied were 0$^{\circ}$, 15$^{\circ}$, 30$^{\circ}$, and 45$^{\circ}$with respect to the crystal major axes of the substrate. Scattering of junction critical currents among the junctions on the same substrate increased with the step-line angle. Current-voltage curves showed standard resistively-shunted-junction (RSJ) characteristics in most of the 0$^{\circ}$junctions. However, the number of junctions showing RSJ behavior decreased with increasing step-line angle. Variations of detailed microstructure of the step-edge among junctions, which are coupled with the d-wave symmetry of YBa$_2$Cu$_3$O$_{7}$, are believed to be the main cause for the nonuniformity in the critical current.ent.

• JSTS:Journal of Semiconductor Technology and Science
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• 제12권1호
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• pp.59-65
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• 2012

A study on the electrical characteristic analysis of solar cell diodes under experimental conditions of varying temperature and frequency has been conducted. From the current-voltage (I-V) measurements, at the room temperature, we obtained the ideality factor (n) for Space Charge Region (SCR) and Quasi-Neutral Region (QNR) of 3.02 and 1.76, respectively. Characteristics showed that the value of n (at SCR) decreases with rising temperature and n (at QNR) increases with the same conditions. These are due to not only the sharply increased SCR current flow but the activated carrier recombination in the bulk region caused by defects such as contamination, dangling bonds. In addition, from the I-V measurements implemented to confirm the junction uniformity of cells, the average current dispersion was 40.87% and 10.59% at the region of SCR and QNR, respectively. These phenomena were caused by the pyramidal textured junction structure formed to improve the light absorption on the device's front surface, and these affect to the total diode current flow. These defect and textured junction structure will be causes that solar cell diodes have non-ideal electrical characteristics compared with general p-n junction diodes. Also, through the capacitance-voltage (C-V) measurements under the frequency of 180 kHz, we confirmed that the value of built-in potential is 0.63 V.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2000년도 제18회 학술발표회 논문개요집
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• pp.180-180
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• 2000

Plasma source ion implantation is a new doping technique for the formation of shallow junction with the merits of high dose rate, low-cost and minimal wafer charging damage. In plasma source ion implantation process, the wafer is placed directly in the plasma of the appropriate dopant ions. Negative pulse bias is applied to the wafer, causing the dopant ions to be accelerated toward the wafer and implanted below the surface. In this work, inductively couples plasma was generated by anodized Al antenna that was located inside the vacuum chamber. The outside wall of Al chamber was surrounded by Nd-Fe-B permanent magnets to confine the plasma and to enhance the uniformity. Before implantation, the wafer was pre-sputtered using DC bias of 300B in Ar plasma in order to eliminate the native oxide. After cleaning, B2H6 (5%)/H2 plasma and negative pulse bias of -1kV to 5 kV were used to form shallow p+/n junction at the boron dose of 1$\times$1015 to 5$\times$1016 #/cm2. The as-implanted samples were annealed at 90$0^{\circ}C$, 95$0^{\circ}C$ and 100$0^{\circ}C$during various annealing time with rapid thermal process. After annealing, the sheet resistance and the junction depth were measured with four point probe and secondary ion mass spectroscopy, respectively. The doping uniformity was also investigated. In addition, the electrical characteristics were measured for Schottky diode with a current-voltage meter.

• 공학논문집
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• 제6권2호
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• pp.33-38
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• 2004

To investigate the reliability of the MTJs on the roughness of insulating tunnel barrier, we prepared two MTJs with the different uniformity of barrier thickness. Namely, the one has uniform insulating barrier thickness; the other has non-uniform insulating barrier thickness as compared to different thing. As to depositing amorphous layer CoZrNb under the pinning layer IrMn, we achieved MTJ with uniform barrier thickness. Toinvestigate the reliability of the MTJs dependent on the bottom electrode, time-dependent dielectric breakdown (TDDB) measurements were carried out under constant voltage stress. The Weibull fit of out data shows clearly that $t_{BD}$ scales with the thickness uniformity of MTJs tunnel barrier. Assuming a linear dependence of log($t_{BD}$) on stress voltages, we obtained the lifetime of $10^4$years at a operating voltage of 0.4 V at MTJs comprising CoNbZr layers. This study shows that the reliabilityof new MTJs structure was improved due to the ultra smooth barrier, because the surface roughness of the bottom electrode influenced the uniformity of tunnel barrier.

• 한국재료학회지
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• 제13권6호
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• pp.369-373
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• 2003

Magneto-optic Kerr Effect(MOKE), AFM and magnetoresistance measurements have been carried out on as-deposited and annealed Magnetic Tunnel Junctions(MTJs) with junction sizes 180, 250, 320 and 380 $\mu\textrm{m}$ in order to investigate the correlation among interlayer exchange coupling, surface roughness and junction size. Relatively irregular variations of coercivity $H_{c}$ (∼17.5 Oe) and interlayer exchange coupling $H_{E}$ (∼17.5 Oe) are observed over the junction in as-deposited sample prepared by DC magnetron sputtering. After annealing at $200^{\circ}C$, $H_{c}$ decreases to 15 Oe, while $H_{ E}$ increases to 20 Oe with smooth local variation. $H_{E}$ shows very good correlation with surface roughness across the junction in agreement with Neel's orange peel coupling. The increasing slope per $\mu\textrm{m}$ of normalized $H_{c}$ and $H_{E}$ are same near junction edge along free-layer direction irrespective of junction size, giving relatively uniform $H_{c}$ and $H_{ E}$ for wider junction size. Thickness profiles of the junctions measured with $\alpha$-step show increasingly flat top surface for larger junctions, indicating better uniformity for large. junctions in agreement with the normalized$ H_{c}$ and H$/_{E}$ curves. TMR ratios also increase with increasing junction size, indicating improvement for larger uniform junctions.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.429-429
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• 2012

To investigate the gettering effect of B-doped n-type monocrystalline silicon wafer, we made the p-n junction by diffusing boron into n-type monocrystalline Si substrate and then oxidized the boron doped n-type monocrystalline silicon wafer by in-situ wet and dry oxidation. After oxidation, the minority carrier lifetime was measured by using microwave photoconductance and the sheet resistance by 4-point probe, respectively. The junction depth was analyzed by Secondary Ion Mass Spectrometry (SIMS). Boron diffusion reduced the metal impurities in the bulk of silicon wafer and increased the minority carrier lifetime. In the case of wet oxidation, the sheet resistance value of ${\sim}46{\Omega}/{\Box}$ was obtained at $900^{\circ}C$, depostion time 50 min, and drive-in time 10 min. Uniformity was ~7% at $925^{\circ}C$, deposition time 30 min, and drive-in time 10 min. Finally, the minority carrier lifetime was shown to be increased from $3.3{\mu}s$ for bare wafer to $21.6{\mu}s$ for $900^{\circ}C$, deposition 40 min, and drive-in 10 min condition. In the case of dry oxidation, for the condition of 50 min deposition, 10 min drive-in, and O2 flow of 2000 SCCM, the minority carrier lifetime of 16.3us, the sheet resistance of ${\sim}48{\Omega}/{\Box}$, and uniformity of 2% were measured.

• Transactions on Control, Automation and Systems Engineering
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• 제2권4호
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• pp.268-273
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• 2000

Plasma models are crucial to equipment design and process optimization. A radial basis function network(RBFN) in con-junction with statistical experimental design has been used to model a process plasma. A 2$^4$ full factorial experiment was employed to characterized a hemispherical inductively coupled plasma(HICP) in characterizing HICP, the factors that were varied in the design include source power, pressure, position of shuck holder, and Cl$_2$ flow rate. Using a Langmuir probe, plasma attributes were collected, which include typical electron density, electron temperature. and plasma potential as well as their spatial uniformity. Root mean-squared prediction errors of RBEN are 0.409(10(sup)12/㎤), 0.277(eV), and 0.699(V), for electron density, electron temperature, and Plasma potential, respectively. For spatial uniformity data, they are 2.623(10(sup)12/㎤), 5.704(eV) and 3.481(V), for electron density, electron temperature, and plasma potential, respectively. Comparisons with generalized regression neural network(GRNN) revealed an improved prediction accuracy of RBFN as well as a comparable performance between GRNN and statistical response surface model. Both RBEN and GRNN, however, experienced difficulties in generalizing training data with smaller standard deviation.

• Progress in Superconductivity
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• 제3권2호
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• pp.168-171
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• 2002

We have demonstrated ramp-edge Josephson junctions using high temperature superconductors without depositing artificial barriers. We fabricated a surface barrier formed naturally during an ion beam etching process and the annealing under the oxygen atmosphere. The experimental results imply that the barrier natures such as the resistivity are varied by the annealing conditions and the ion milling conditions including the beam voltages. Thus, the ann eating and etching conditions should be optimized to obtain excellent junction properties. In optimizing the fabricating factors, the interface-controlled junctions showed resistively shunted junctions like current-voltage characteristics and an excellent uniformity. These junctions exhibited a spread ($1\sigma$) of $I_{c}$ is 10% fur chips containing 7 junctions at 50K.K.

• 대한방사선치료학회지
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• 제26권2호
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• pp.217-224
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• 2014

목 적 : Conventional, IMRT, VMAT을 이용한 CSI치료 시, Setup 오차에 따른 각 Junction부의 선량변화측정을 통해 치료계획을 비교한다. 대상 및 방법 : 본원에서 CSI 치료환자를 대상으로 이클립스 10.0(Eclipse10.0, Varian, USA)를 이용하여 Conventional, IMRT, VMAT 치료계획을 세웠다. 또한 필름측정을 위하여 각 치료계획마다 IMRT QA phantom을 적용한 Verification plan을 생성하였다. 이때, 각 치료기법의 Setup 오차는 0, 머리방향으로 2, 4, 6mm, 다리방향으로 2, 4, 6mm로 적용하였다.(이하, '+'는 머리 방향, '-'는 다리방향을 의미한다.) IMRT QA Phantom과 EBT2 film을 이용하여, 각 치료기법별로 Junction부의 Setup 오차를 0, +2, +4, +6, -2, -4, -6mm로 이동하여 조사하였다. Film을 Scan하여 감마지수(Gamma index,${\gamma}$)를 도출하여, 측정된 Film과 치료계획상의 선량분포와의 일치성을 확인한 후, Setup 오차에 따른 Conventional, IMRT, VMAT 치료계획별 선량분포도를 비교하였고, Homogeneity Index(HI)를 계산하여 표적 내 선량분포의 균일성을 분석하였다. 결 과 : Film으로 측정하여 얻은 감마지수는 90.49%로 Film scan값과 치료계획상의 선량분포와의 일치성을 확인하였다. 또한, 거리에 따른 선량분포도에 따르면, Setup 오차를 머리 방향으로 2, 4, 6mm설정하면 Conventional의 $^*Diff$(%)는 3.1, 4.5, 8.1, IMRT는 1.1, 3.5, 6.3, VMAT은 1.6, 2.5, 5.7으로 나타났다. 같은 방법으로 Setup 오차를 다리방향으로 2, 4, 6mm로 설정을 하면 Conventional의 $^*Diff$(%)는 -1.6, -2.8, -4.4, IMRT는 -0.9, -1.6, -2.9, VMAT은 -0.5, -2.2, -2.5으로 나타났다. Homogeneity Index(HI)는 Conventional 1.216, IMRT 1.095, VMAT 1.069로 값을 얻었다. 결 론 : Dose homogeneity와 Junction 부위에 대한 완만한 Dose gradient의 장점을 가진 IMRT와 VMAT을 이용한 CSI치료는 Conventional 기법보다 Setup 오차에 따른 Junction 부위의 선량의 변화가 적었고, 균일성 또한 좋게 나타났다. 이러한 적은 선량의 변화는 CSI치료 시 발생하는 Setup 오차에도 환자에게 위험성이 적음을 의미한다.