• Journal of Crop Science and Biotechnology
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• 제11권4호
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• pp.237-242
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• 2008

A liguleless mutant, which showed complete loss of lamina joint region at the junction between leaf blade and leaf sheath, was isolated from a Ds insertional mutants derived from the source cultivar, Dongjin. This mutant could not affect other developmental patterns like phyllotaxis. Southern blot analysis, using GUS as a probe, revealed that the liguleless mutant contained three Ds copies transposed in the rice genome. Among the four genomic sequences flanking the Ds, one was mapped in the intergenic region (31661640 - 31661759), and the other two predicted a protein kinase domain (12098980 - 12098667) as an original insertion site within a starter line used for massive production of Ds insertional mutant lines. Another predicted and inserted in first exon of liguleless 1 protein (OsLG1) that was mapped in coding region (LOC_Os04g56170) of chromosome 4. RT-PCR revealed that the OsLG1 gene was not expressed liguleless mutants. Structure analysis of OsLG1 protein revealed that it predicted transcription factor with a highly conserved SBP domain consisting of 79 amino acids that overlapped a nuclear localization signal (NLS). RT-PCR revealed that OsLG1 is mainly expressed in vegetative organs.

• Current Photovoltaic Research
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• 제1권1호
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• pp.63-68
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• 2013

We investigated the effects of Au eutectic reaction on Si thin film growth by hot wire chemical vapor deposition. Small SiC and Si nano-particles fabricated through a wet etching process were coated and biased at 50 V on micro-textured Si p-n junction solar cells. Au thin film of 10 nm and a Si thin film of 100 nm were then deposited by an electron beam evaporator and hot wire chemical vapor deposition, respectively. The Si and SiC nano-particles and the Au thin film were structurally embedded in Si thin films. However, the Au thin film grew and eventually protruded from the Si thin film in the form of Au silicide nano-balls. This is attributed to the low eutectic bonding temperature ($363^{\circ}C$) of Au with Si, and the process was performed with a substrate that was pre-heated at a temperature of $450^{\circ}C$ during HWCVD. The nano-balls and structures showed various formations depending on the deposited metals and Si surface. Furthermore, the samples of Au nano-balls showed low reflectance due to surface plasmon and quantum confinement effects in a spectra range of short wavelength spectra range.

• 한국농공학회지
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• 제41권4호
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• pp.77-85
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• 1999

In this study, a computer program considering initial imperfection of axisymmetric reinforced concrete shell which plastic deformation by large external loading was developed . Initial imperfection of dome was assumed as 'dimple type' which can be expressed as Wi=(Wo/h)(1-x$^2$)$^3$. The developed model applied to the analysis of dynamic response of axisymmetric reinforced concrete shell when it has initial imperfection. The initial imperfection of 0.0, -5.0, and 5cm and steel and steel layer ratio 0,3, and 5% were tested for numerical examples . The results can be summarized as follows ; 1. Dynmaic response of vertical deflection at dome crown showed slow increased if it has not inital imperfection . But the response showed relatively high amplitude when initial imperfection was inner directed (opposite direction to loading). Similar trends also appeared for different steel layer ratios. 2. Dynamic responses of radial displacement at the junction of dome and wall showed the highest amplitude when initial imperfection was inward directed (opposite direction to loading). The lowest amplitude occurred when initial imperfection was outward directed (same direction to loading). Vibration period also delayed for inward directed initial imperfection . These trends were obvious as steel layer ratio increasing. 3. The effects of imperfection for the dynamic response of radial displacement a the center of wall scarely appeared. The effects of initial imperfection of dome on the dynmaic response of the wall can be neglected. 4. Effect of steel on the dynmic response of axisymmetric shell structure was great when initial imperfection did not exist. And the effect of direction of initial imperfection (inward or outward) did not show big difference.

• 전자공학회논문지T
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• 제35T권1호
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• pp.7-13
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• 1998

Submicron급의 고집적 소자에서는 종래의 긴 채널 소자에서 생기지 않던 짧은 채널효과에 기인하는 2차원적인 영향으로 고온전자(hot carrier) 등이 발생하여 소자의 신뢰성을 저하시키는 요인이 되고 있어 이들의 발생을 최소화할 수 있는 다양한 형상의 소오스/드레인 구조가 연구되고 있다. 본 논문에서는 제작공정의 간략화, 소자규모의 미세화, 응답속도의 고속화에 적합한 소오스/드레인에 Schottky장벽 접합을 채택한 MOS형 트랜지스터를 제안하고, p형 실리콘을 이용한 소자의 제작을 통하여 동작특성을 조사하였다. 이 소자의 출력특성은 포화특성이 나타나지 않는 트랜지스터의 작용이 나타났으며, 전계효과 방식의 동작에 비하여 높은 상호콘덕턴스를 갖고 있는 것으로 나타났다. 여기서 고농도의 채널층을 형성하여 구동 전압을 낮게하고 높은 저항의 기판을 사용하므로서 드레인과 기판사이의 누설전류를 감소시키는 등의 개선점이 있어야 할 것으로 나타났다.

• Journal of Periodontal and Implant Science
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• 제34권3호
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• pp.647-657
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• 2004

A non-carious cervical lesion(NCCL) is the loss of tooth structure at the cementoenamel junction level that is unrelated to dental caries. This study was to evaluate the occlusal and periodontal status of teeth with non-carious cervical lesions. We evaluated 105 teeth with non-carious cervical lesions in 35 subjects aged 38-75 years and characterized them based on the shape and dimension, plaque retention, bleeding on probing(BOP), probing pocket depth(PPD), occlusal status, brushing type, hypersensitivity and wear facet. The results of this study were as follows 1. No significant association was observed between cervical lesions and occlusal contact in lateral excursions. 2. No significant difference occurred in plaque retention, PPD, BOP between teeth with and without cervical lesions. 3. Test teeth had a significantly higher percentage of hypersensitivity and occlusal wear facet than teeth without cervical lesions. 4. Wedge shaped lesions had a significantly higher percentage of plaque than saucer shaped lesions. 5. Teeth with plaque were found to have significantly deeper PPD than teeth without plaque retention in cervical regions. 6. Teeth with occlusal contacts were found to have significantly deeper PPD than teeth without occlusal contacts. 7. No significant association was observed between cervical lesions and PPD independent of plaque retention and occlusal contacts Although more knowledge is necessary, our results suggest that occlusal contact and bacterial plaque may influence on periodontal tissue, but NCCL is not directly associated with periodontal health

• KIEAE Journal
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• 제14권5호
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• pp.117-121
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• 2014

Even though a study of airtightness performance of apartment and detached house have been done constantly, there are few of studies of multi-family housing which increasing every year. Therefore, this study analyzed airtightness performance of 20 households of one room in Daejeon to investigate airtightness performance standard. All experiments were performed under the same conditions except sealing windows to investigate airtightness performance without sealing windows (natural condition) and airtightness performance with sealing windows of studio apartment. As results, (1) average ACH50 without sealing windows was 19.2/h for pressurization, and 12.8/h for depressurization and (2) average ACH50 with sealing windows was 16.0/h for pressurization, and 10.7/h for depressurization and ACH50 in both condition, ACH50 under pressurization was about 50% higher than that under depressurization. Throughout this experiment, we can figure out that about 16% of air infiltration rate is occurred in windows, and the other 84% is occurred in rest of places such as Junction structure, socket and ventilating opening.

• 한국광학회지
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• 제19권5호
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• pp.381-385
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• 2008

InGaN/Sapphire LED에서 기판 제거와 패키지 방식이 광출력 특성에 미치는 영향을 분석하였다. Sapphire 기판의 제거는 반도체 접합에서 발생된 열의 방출에 도움이 되지만, 반대로 광추출효율이 손상되는 문제점이 수반된다. Sapphire 기판이 제거된 칩을 열전도율이 좋은 금속의 마운트 위에 부착하면, 최대 구동전류는 현저히 증가하고 광출력도 상당히 증가됨으로써, 광추출효율이 손상되는 문제점이 어느 정도 보상된다. 하지만, sapphire 기판이 제거된 칩을 상대적으로 열전도율이 낮은 유전체의 마운트 위에 부착하는 경우에는, 거의 모든 입력전류 범위에서 sapphire 기판이 남아 있는 일반형 칩보다 낮은 광출력을 나타낸다. 따라서, 작은 광출력이 요구되는 응용분야에서는 사용된 칩 마운트의 종류에 무관하게, 일반형 칩이 sapphire 기판이 제거된 칩 보다 유리한 것으로 분석된다.

• 한국재료학회지
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• 제24권1호
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• pp.19-24
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• 2014

We report the nitrogen monoxide (NO) gas sensing properties of p-type CuO-nanorod-based gas sensors. We synthesized the p-type CuO nanorods with breadth of about 30 nm and length of about 330 nm by a hydrothermal method using an as-deposited CuO seed layer prepared on a $Si/SiO_2$ substrate by the sputtering method. We fabricated polycrystalline CuO nanorod arrays at $80^{\circ}C$ under the hydrothermal condition of 1:1 morality ratio between copper nitrate trihydrate [$Cu(NO_2)_2{\cdot}3H_2O$] and hexamethylenetetramine ($C_6H_{12}N_4$). Structural characterizations revealed that we prepared the pure CuO nanorod array of a monoclinic crystalline structure without any obvious formation of secondary phase. It was found from the gas sensing measurements that the p-type CuO nanorod gas sensors exhibited a maximum sensitivity to NO gas in dry air at an operating temperature as low as $200^{\circ}C$. We also found that these CuO nanorod gas sensors showed reversible and reliable electrical response to NO gas at a range of operating temperatures. These results would indicate some potential applications of the p-type semiconductor CuO nanorods as promising sensing materials for gas sensors, including various types of p-n junction gas sensors.

• 한국자기학회지
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• 제16권2호
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• pp.136-139
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• 2006

자기터널접합은 일반적으로 $250^{\circ}C$ 이상의 온도에서 터널자기저항비의 저하가 발생하는데 이는 반강자성체로 사용된 IrMn 중 Mn이 강자성체인 CoFe 및 터널배리어로의 내부확산에 기인한다. 자기터널접합의 열적 안정성을 향상시키기 위하여 나노산화층을 삽입하여 Mn의 확산을 제어하였다. CoNbZr 4/CoFe 10/IrMn 7.5/CoFe 3/터널배리어/CoFe 3/CoNbZr 2(nm)와 같은 자기터널접합을 기본구조로 하여 각각의 층에 나노산화층을 삽입하여 열적안정성 및 전자기적 특성을 비교 분석 하였다. 나노산화층의 삽입에 의해 터널자기저항비, 자기터널접합의 표면 평활도 및 열적안정성이 향상되었다.

• 한국전기전자재료학회논문지
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• 제30권8호
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• pp.525-529
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• 2017

Molybdenum oxide ($MoO_3$) offers pivotal advantages for high optical transparency and low light reflection. Considering device fabrication, n-type $MoO_3$ semiconductor can spontaneously establish a junction with p-type Si. Since the energy bandgap of Si is 1.12 eV, a maximum photon wavelength of around 1,100 nm is required to initiate effective photoelectric reaction. However, the utilization of infrared photons is very limited for Si photonics. Hence, to enhance the Si photoelectric devices, we applied the wide energy bandgap $MoO_3$ (3.7 eV) top-layer onto Si. Using a large-scale production method, a wafer-scale $MoO_3$ device was fabricated with a highly crystalline structure. The $MoO_3/p-Si$ heterojunction device provides distinct photoresponses for long wavelength photons at 900 nm and 1,100 nm with extremely fast response times: rise time of 65.69 ms and fall time of 71.82 ms. We demonstrate the high-performing $MoO_3/p-Si$ infrared photodetector and provide a design scheme for the extension of Si for the utilization of long-wavelength light.