• ETRI Journal
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• 제28권5호
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• pp.555-560
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• 2006

A PIN photodiode having a low dark current of 1.35 nA and a high external quantum efficiency of 95.3% fabricated for a passive optical network receiver. As the current was increased under a high voltage of 38 V and a temperature of $190^{\circ}C$, it was observed that there is a threshold current at 11 mA which induces a junction failure. Experimental data suggest that the junction failure occurs due to the crystal breaking at the end facet as a result of thermal heat or energetic carriers. This threshold behavior of junction failure is a valuable observation for the safe treatment of photodiodes. As long as the current is limited below the threshold currents, we have not observed failure events of our photodiodes.

• Journal of Mechanical Science and Technology
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• 제18권4호
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• pp.582-591
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• 2004

The purpose of this study was to determine the effects of elbow joint angle on mechanical properties, as represented by ultimate load, failure strain and elastic modulus, of bone-tendon specimens of common extensor tendon of the humeral epicondyle. Eight pairs of specimens were equally divided into two groups of 8 each, which selected arbitrarily from left or right side of each pair, positioned at 45$^{\circ}$ and 90$^{\circ}$ of elbow flexion and subjected to tension to failure in the physiological direction of the common extensor tendon. For comparison of the differences in the failure and elastic modulus between tendon and the bone-junction, data for both were evaluated individually. Significant reduction in ultimate load of bone-tendon specimens was shown to occur at 45$^{\circ}$. The values obtained from the bone-tendon junctions with regard to the failure strain were significant higher than those from tendon in both loading directions, but the largest failure strain at the bone-tendon junction was found at 45$^{\circ}$. The elastic modulus was found to decrease significantly at the bone-tendon junction when the loading direction switched from 90$^{\circ}$ to 45$^{\circ}$. Histological observation, after mechanical tensile tests, in both loading directions showed that failure occurred at the interface between tendon and uncalcified fibrocartilage in the thinnest fibrocartilage zone of the bone-tendon junction. We concluded that differences in measured mechanical properties are a consequence of varying the loading direction of the tendon across the bone-tendon specimen.

• 전자공학회논문지A
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• 제31A권5호
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• pp.94-100
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• 1994

The junction failure mechanism of W plugs has not been fully understood while the selective W deposition has been widely used for plugging interconnection lines. In this paper, the thermal stability and junction failure mechanism of sub-micron contacts using selective CVD-W plugs were intensively studied with the metal lines of AISiCu, Ti/AISiCu and TiN/AISiCu. The experimental results showed that the contact chain resistance and leakage current in the AISiCu and Ti/AISiCu metallizations were significantly degraded after annealing. From the SEM analysis, it was found that the junction spiking, due to the Al atoms diffusion along the porous interface between selective CVD-W and contactside wall, caused the junction failure. In constast, there was no degradation of the contact resistance and junction leakage current in TiN/AISiCu metal structu-re. It is believed that the TiN barrier layer could prevent AI(Ti) atoms Fromdiffusing. Therefore, TiN barrier between W plug and Al should be used to impro-ve the thermal stability of sub-micron contacts using the selective CVD-W plugs.

• 한국자기학회지
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• 제12권5호
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• pp.168-173
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• 2002

본 연구에서는 인체모델(humman body model; HBM)을 터널링 자기저항(tunneling magneto resistance; TMR)소자에 연결하여 정전기에 대한 방전특성을 연구하였다. 이를 위해 제조된 TMR 시편을 전기적 등가회로 바꿔 HBM에 연결하여 PSPICE를 이용해 시뮬레이션 하였다. 이러한 등가회로에서 접합부분의 모델링 요소들의 값을 변화시켜 방전특성을 관찰할 수 있었다. 그 결과 시편의 저항과 정전용량 성분의 값이 다른 요소들에 비해 수배에서 수백 배까지 커서 정전기 방전(electrostatic discharge; ESD) 민감도를 좌우하는 주요한 요소임을 알 수 있었다. 여기에서 ESD현상에 대한 내구성을 향상시키기 위해서는 정전용량을 증가시키는 것 보다 접합면과 도선의 저항값을 줄이는 것이 유리하다. 그리고 직류 전압에 대해 절연층의 전위 장벽이 낮아져 많은 전류가 흐르게 되는 항복(breakdown)전압과 셀의 물리적 구조 및 성질이 변형되어 회복되지 못하는 파괴(failure)전압을 측정하여 DC 상태에서의 내구성을 연구하였다. 이 결과를 HBM 전압에 대한 파괴 전압으로 간주하여 TMR 소자가 견딜 수 있는 HBM 전압을 예측할 수 있었다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제3권3호
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• pp.153-166
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• 2003

Failure analysis is fundamental to the design and development methodology of electrostatic discharge (ESD) devices and ESD robust circuits. The role of failure analysis (FA) in the models, methodology, band mechanisms evaluation for improving ESD robustness of semiconductor products in CMOS, silicon-on-insulator (SOI) and silicon germanium (SiGe) technologies will be reviewed.

• Childhood Kidney Diseases
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• 제28권1호
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• pp.1-7
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• 2024

Antenatally diagnosed urinary tract dilatation (UTD), previously referred to as antenatal hydronephrosis, is the most commonly detected abnormality by prenatal ultrasonography. Several grading systems have been developed for the classification of antenatal UTD using prenatal and postnatal ultrasonography. UTD comprises a wide variety of congenital abnormalities of the kidney and urinary tract ranging from transient UTD to more significant abnormalities such as vesicoureteral reflux, ureteropelvic junction obstruction, ureterocele, ureterovesical junction obstruction, posterior urethral valves, and non-refluxing megaureter. Optimizing the evaluation of antenatally detected UTD is essential to recognize children with important disorders while avoiding excessive investigations. Conservative approach with close follow-up is increasingly accepted as an appropriate treatment option for patients with asymptomatic vesicoureteral reflux and ureteropelvic junction obstruction in recent years. However, predicting permanent kidney damage in an unselected group of children with antenatal UTD is still challenging. The management and follow-up of children with UTD should be individualized based on recommendations from a pediatric nephrologist, a pediatric urologist, or both. Future research directed at predicting long-term outcomes of children diagnosed with UTD from mild findings to severe disease is needed to refine management for those at higher risk of kidney disease progression.

• 한국농공학회논문집
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• 제53권2호
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• pp.27-33
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• 2011

This study is a preliminary investigation into the development of a construction method that will protect a reservoir even during over flows caused by severe flooding. Through hydraulic modeling tests, the destructive phenomena caused by spillway-junction scour during reservoir overflow were modeled, and the effects on the embankment during such an overflow and the spillway-junction movements are discussed. The reservoir destruction model used the Tanbu reservoir, located in Gangwondo Chuncheon-si Namsanmyeon (H＝22 m, L＝115 m), as the model reservoir and created an embankment with a 1/60 ratio. We review the spillway-junction safety factor during overflow and embankment movement following reinforcement measures for three different cases: no reinforcement, cemented sand and gravel (CSG) reinforcement and water-blocking sheet reinforcement. The results of this study confirmed that when the spillway-junction is exposed to soil, it is very vulnerable to overflow and that a water-blocking sheet or CSG reinforcement are very effective measures in preventing embankment destruction in the long-term period.

• 한국안전학회지
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• 제31권2호
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• pp.10-17
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• 2016

The purpose of this paper is to deduct components that are in the group of highest risk(top 10%). the group is conducted for classification into groups by values according to risk priority through risk priority number(RPN) of FMEA(Failure modes and effects analysis) sheet. Top 10% of failure mode among total potential failure modes(72 failure modes) of ESS included 5 BMS(battery included) failure modes, 1 invert failure mode, and 1 cable connectors failure mode in which BMS was highest. This is because ESS is connected to module, try, and lack in the battery part as an assembly of electronic information communication and is managed. BMS is mainly composed of the battery module and communication module. There is a junction box and numerous connectors that connect these two in which failure occurs most in the connector part and module itself. Finally, this paper proposes RPN by each step from the starting step of ESS design to installation and operation. Blackouts and electrical disasters can be prevented beforehand by managing and removing the deducted risk factors in prior.

• 전기학회논문지
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• 제57권2호
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• pp.276-285
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• 2008

These days the automobile industry, which has rapidly progressed, has been an indispensable part in social and economic activities as well as its research and development have been activated in response to various needs of consumers and markets. The second and third generation control system, getting count on safety and convenience differently than early circuits, cause the hypertrophy of wire harness. The J/Box(Junction Box), which distributes power and wires, was developed to solve the problem. As vehicles have been better in quantity and intelligence, however, environment-friendly electric apparatus system has continuously increased and ITS(Intelligent Transport System) has been introduced in earnest. In result, wires got complicated and multilateral and also there has been a stronger probability that vehicles are out of order due to various problems including mechanical failure. In this study, ISJB(Intelligent Smart Junction Box) was introduced to solve the problem. The diagnosis system was applied to prevent the overload and short of ISJE. Also, the state of vehicles displayed so that drivers monitor it in motion. Likewise error data are saved in the memory so that such data can be analyzed retrospectively. The busbar was adopted in to the main power terminal and the part of power pattern was coverd by lead. Because ISJB is more sensitive to heat in comparison to the busbar type J/Box. With regard the circuits related with safe, alternative circuits were set up in order that electronic devices may be normally operated even when an error arises. ISJB is expected to improve the safety and quality of vehicles.

• 한국산학기술학회논문지
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• 제18권6호
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• pp.37-43
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• 2017

본 논문에서는 고출력 전자기파 (Electromagnetic pulses, EMP) 영향에 의해 발생하는 반도체 부품의 물리적 상호작용에 대한 원리와 고장 발생 메커니즘의 연구를 위해 선행된 연구 내용을 고찰하였다. 반도체 부품에서의 전자기파 전이 과정은 3층 (공기/유전체/도체) 구조로 설명할 수 있으며, 복소반사계수에 의하여 이론적으로 흡수되는 에너지를 예상할 수 있다. 반도체 부품에 전달된 과도한 고출력 전자기파로 인한 반도체 부품의 주요 고장 원인은 전자기파 커플링에 의한 부품 소재의 줄 열에너지의 발생이다. 전기장에 의한 유전가열과 자기장에 의한 맴돌이손실에 의해 반도체 칩의 P-N 접합 파괴, 회로패턴의 burn-out과 리드 프레임과 칩을 연결하는 와이어의 손상 등이 발생한다. 즉, 반도체 부품에 전달된 전자기파는 반도체 내부 물질과 상호작용을 하며, 쌍극자분극과 이온 전도도 현상이 동시에 발생하여, 칩 내부의 P-N 접합 부분에 과도한 역전압이 형성되어 P-N 접합 파괴를 유발한다. 향후 고 신뢰성을 요구하는 전기전자시스템에 대한 EMP 내성을 향상하기 위한 반도체 부품 수준의 연구가 필요하다.