• Title/Summary/Keyword: junction failure

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Temperature, Current, and Voltage Dependences of Junction Failure in PIN Photodiodes

  • Park, Sahng-Gi;Sim, Eun-Deok;Park, Jeong-Woo;Sim, Jae-Sik;Song, Hyun-Woo;Oh, Su-Hwan;Baek, Yong-Soon
    • ETRI Journal
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    • v.28 no.5
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    • pp.555-560
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    • 2006
  • A PIN photodiode having a low dark current of 1.35 nA and a high external quantum efficiency of 95.3% fabricated for a passive optical network receiver. As the current was increased under a high voltage of 38 V and a temperature of $190^{\circ}C$, it was observed that there is a threshold current at 11 mA which induces a junction failure. Experimental data suggest that the junction failure occurs due to the crystal breaking at the end facet as a result of thermal heat or energetic carriers. This threshold behavior of junction failure is a valuable observation for the safe treatment of photodiodes. As long as the current is limited below the threshold currents, we have not observed failure events of our photodiodes.

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The Effects of Elbow Joint Angle on the Mechanical Properties of the Common Extensor Tendon of the Humeral Epicondyle

  • Han, Jung-Soo
    • Journal of Mechanical Science and Technology
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    • v.18 no.4
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    • pp.582-591
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    • 2004
  • The purpose of this study was to determine the effects of elbow joint angle on mechanical properties, as represented by ultimate load, failure strain and elastic modulus, of bone-tendon specimens of common extensor tendon of the humeral epicondyle. Eight pairs of specimens were equally divided into two groups of 8 each, which selected arbitrarily from left or right side of each pair, positioned at 45$^{\circ}$ and 90$^{\circ}$ of elbow flexion and subjected to tension to failure in the physiological direction of the common extensor tendon. For comparison of the differences in the failure and elastic modulus between tendon and the bone-junction, data for both were evaluated individually. Significant reduction in ultimate load of bone-tendon specimens was shown to occur at 45$^{\circ}$. The values obtained from the bone-tendon junctions with regard to the failure strain were significant higher than those from tendon in both loading directions, but the largest failure strain at the bone-tendon junction was found at 45$^{\circ}$. The elastic modulus was found to decrease significantly at the bone-tendon junction when the loading direction switched from 90$^{\circ}$ to 45$^{\circ}$. Histological observation, after mechanical tensile tests, in both loading directions showed that failure occurred at the interface between tendon and uncalcified fibrocartilage in the thinnest fibrocartilage zone of the bone-tendon junction. We concluded that differences in measured mechanical properties are a consequence of varying the loading direction of the tendon across the bone-tendon specimen.

The Effects of Metal Structure on the Junction Stability of Sub-micron Contacts Using Selective CVD-W Plug (금속 구조 변화에 따른 선택 화학기상증착 W Plug의 접합 신뢰성 연구)

  • 최경근;김춘환;박흥락;고철기
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.31A no.5
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    • pp.94-100
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    • 1994
  • The junction failure mechanism of W plugs has not been fully understood while the selective W deposition has been widely used for plugging interconnection lines. In this paper, the thermal stability and junction failure mechanism of sub-micron contacts using selective CVD-W plugs were intensively studied with the metal lines of AISiCu, Ti/AISiCu and TiN/AISiCu. The experimental results showed that the contact chain resistance and leakage current in the AISiCu and Ti/AISiCu metallizations were significantly degraded after annealing. From the SEM analysis, it was found that the junction spiking, due to the Al atoms diffusion along the porous interface between selective CVD-W and contactside wall, caused the junction failure. In constast, there was no degradation of the contact resistance and junction leakage current in TiN/AISiCu metal structu-re. It is believed that the TiN barrier layer could prevent AI(Ti) atoms Fromdiffusing. Therefore, TiN barrier between W plug and Al should be used to impro-ve the thermal stability of sub-micron contacts using the selective CVD-W plugs.

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Electrostatic discharge simulation of tunneling magnetoresistance devices (터널링 자기저항 소자의 정전기 방전 시뮬레이션)

  • Park, S.Y.;Choi, Y.B.;Jo, S.C.
    • Journal of the Korean Magnetics Society
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    • v.12 no.5
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    • pp.168-173
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    • 2002
  • Electrostatic discharge characteristics were studied by connecting human body model (HBM) with tunneling magnetoresistance (TMR) device in this research. TMR samples were converted into electrical equivalent circuit with HBM and it was simulated utilizing PSPICE. Discharge characteristics were observed by changing the component values of the junction model in this equivalent circuit. The results show that resistance and capacitance of the TMR junction were determinative components that dominate the sensitivity of the electrostatic discharge(ESD). Reducing the resistance oi the junction area and lead line is more profitable to increase the recording density rather than increasing the capacitance to improve the endurance for ESD events. Endurance at DC state was performed by checking breakdown and failure voltages for applied DC voltage. HBM voltage that a TMR device could endure was estimated when the DC failure voltage was regarded as the HBM failure voltage.

Electrostatic Discharge (ESD) and Failure Analysis: Models, Methodologies and Mechanisms for CMOS, Silicon On Insulator and Silicon Germanium Technologies

  • Voldman, Steven H.
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.3 no.3
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    • pp.153-166
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    • 2003
  • Failure analysis is fundamental to the design and development methodology of electrostatic discharge (ESD) devices and ESD robust circuits. The role of failure analysis (FA) in the models, methodology, band mechanisms evaluation for improving ESD robustness of semiconductor products in CMOS, silicon-on-insulator (SOI) and silicon germanium (SiGe) technologies will be reviewed.

Antenatally detected urinary tract dilatation: a pediatric nephrologist's point of view

  • Hyung Eun Yim
    • Childhood Kidney Diseases
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    • v.28 no.1
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    • pp.1-7
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    • 2024
  • Antenatally diagnosed urinary tract dilatation (UTD), previously referred to as antenatal hydronephrosis, is the most commonly detected abnormality by prenatal ultrasonography. Several grading systems have been developed for the classification of antenatal UTD using prenatal and postnatal ultrasonography. UTD comprises a wide variety of congenital abnormalities of the kidney and urinary tract ranging from transient UTD to more significant abnormalities such as vesicoureteral reflux, ureteropelvic junction obstruction, ureterocele, ureterovesical junction obstruction, posterior urethral valves, and non-refluxing megaureter. Optimizing the evaluation of antenatally detected UTD is essential to recognize children with important disorders while avoiding excessive investigations. Conservative approach with close follow-up is increasingly accepted as an appropriate treatment option for patients with asymptomatic vesicoureteral reflux and ureteropelvic junction obstruction in recent years. However, predicting permanent kidney damage in an unselected group of children with antenatal UTD is still challenging. The management and follow-up of children with UTD should be individualized based on recommendations from a pediatric nephrologist, a pediatric urologist, or both. Future research directed at predicting long-term outcomes of children diagnosed with UTD from mild findings to severe disease is needed to refine management for those at higher risk of kidney disease progression.

An Experimental Study of Reservoir Failure Phenomena According to Transitional Zone: Spillway Scour During Overflow (저수지 월류 시 여수토 접속부 세굴에 따른 붕괴 현상의 실험적 연구)

  • Kim, Young-Ik;Yeon, Kyu-Seok;Kim, Ki-Sung;Jeong, Jong-Woo;Kim, Yong-Seong
    • Journal of The Korean Society of Agricultural Engineers
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    • v.53 no.2
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    • pp.27-33
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    • 2011
  • This study is a preliminary investigation into the development of a construction method that will protect a reservoir even during over flows caused by severe flooding. Through hydraulic modeling tests, the destructive phenomena caused by spillway-junction scour during reservoir overflow were modeled, and the effects on the embankment during such an overflow and the spillway-junction movements are discussed. The reservoir destruction model used the Tanbu reservoir, located in Gangwondo Chuncheon-si Namsanmyeon (H=22 m, L=115 m), as the model reservoir and created an embankment with a 1/60 ratio. We review the spillway-junction safety factor during overflow and embankment movement following reinforcement measures for three different cases: no reinforcement, cemented sand and gravel (CSG) reinforcement and water-blocking sheet reinforcement. The results of this study confirmed that when the spillway-junction is exposed to soil, it is very vulnerable to overflow and that a water-blocking sheet or CSG reinforcement are very effective measures in preventing embankment destruction in the long-term period.

Analysis of Risk Priority Number for Grid-connected Energy Storage System (계통연계형 에너지저장시스템의 위험우선순위 분석)

  • Kim, Doo-Hyun;Kim, Sung-Chul;Park, Jeon-Su;Kim, Eun-Jin;Kim, Eui-Sik
    • Journal of the Korean Society of Safety
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    • v.31 no.2
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    • pp.10-17
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    • 2016
  • The purpose of this paper is to deduct components that are in the group of highest risk(top 10%). the group is conducted for classification into groups by values according to risk priority through risk priority number(RPN) of FMEA(Failure modes and effects analysis) sheet. Top 10% of failure mode among total potential failure modes(72 failure modes) of ESS included 5 BMS(battery included) failure modes, 1 invert failure mode, and 1 cable connectors failure mode in which BMS was highest. This is because ESS is connected to module, try, and lack in the battery part as an assembly of electronic information communication and is managed. BMS is mainly composed of the battery module and communication module. There is a junction box and numerous connectors that connect these two in which failure occurs most in the connector part and module itself. Finally, this paper proposes RPN by each step from the starting step of ESS design to installation and operation. Blackouts and electrical disasters can be prevented beforehand by managing and removing the deducted risk factors in prior.

Development of Diagnosis System Adopted Intelligent Smart Junction Box for Improving Vehicular Power Safety (차량 전원 안정성 향상을 위한 Diagnosis System 채택 Intelligent Smart Junction Box 개발)

  • Jeong, Min-Soo;Kim, Mun-Gyeom;Park, Young-Hoan;Bang, Soon-Young
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.57 no.2
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    • pp.276-285
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    • 2008
  • These days the automobile industry, which has rapidly progressed, has been an indispensable part in social and economic activities as well as its research and development have been activated in response to various needs of consumers and markets. The second and third generation control system, getting count on safety and convenience differently than early circuits, cause the hypertrophy of wire harness. The J/Box(Junction Box), which distributes power and wires, was developed to solve the problem. As vehicles have been better in quantity and intelligence, however, environment-friendly electric apparatus system has continuously increased and ITS(Intelligent Transport System) has been introduced in earnest. In result, wires got complicated and multilateral and also there has been a stronger probability that vehicles are out of order due to various problems including mechanical failure. In this study, ISJB(Intelligent Smart Junction Box) was introduced to solve the problem. The diagnosis system was applied to prevent the overload and short of ISJE. Also, the state of vehicles displayed so that drivers monitor it in motion. Likewise error data are saved in the memory so that such data can be analyzed retrospectively. The busbar was adopted in to the main power terminal and the part of power pattern was coverd by lead. Because ISJB is more sensitive to heat in comparison to the busbar type J/Box. With regard the circuits related with safe, alternative circuits were set up in order that electronic devices may be normally operated even when an error arises. ISJB is expected to improve the safety and quality of vehicles.

Review of Failure Mechanisms on the Semiconductor Devices under Electromagnetic Pulses (고출력전자기파에 의한 반도체부품의 고장메커니즘 고찰)

  • Kim, Dongshin;Koo, Yong-Sung;Kim, Ju-Hee;Kang, Soyeon;Oh, Wonwook;Chan, Sung-Il
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.18 no.6
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    • pp.37-43
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    • 2017
  • This review investigates the basic principle of physical interactions and failure mechanisms introduced in the materials and inner parts of semiconducting components under electromagnetic pulses (EMPs). The transfer process of EMPs at the semiconducting component level can be explained based on three layer structures (air, dielectric, and conductor layers). The theoretically absorbed energy can be predicted by the complex reflection coefficient. The main failure mechanisms of semiconductor components are also described based on the Joule heating energy generated by the coupling between materials and the applied EMPs. Breakdown of the P-N junction, burnout of the circuit pattern in the semiconductor chip, and damage to connecting wires between the lead frame and semiconducting chips can result from dielectric heating and eddy current loss due to electric and magnetic fields. To summarize, the EMPs transferred to the semiconductor components interact with the chip material in a semiconductor, and dipolar polarization and ionic conduction happen at the same time. Destruction of the P-N junction can result from excessive reverse voltage. Further EMP research at the semiconducting component level is needed to improve the reliability and susceptibility of electric and electronic systems.