• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.12
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• pp.2221-2225
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• 2007

Hollow-type microneedle array can be used for painless, continuous and stable drug delivery through a human skin. The needles must be sharp and have sufficient length in order to penetrate the epidermis. An array of hollow-type silicon microneedles was fabricated by using deep reactive ion etching and HNA wet etching with two oxide masks. Isotropic etching was used to create tapered tips of the needles, and anisotropic etching of Bosch process was used to make the extended length and holes of microneedles. The microneedles were formed by three steps of isotropic, anisotropic, and isotropic etching in order. The holes were made by one anisotropic etching step. The fabricated microneedles have $170{\mu}m$ width, $40{\mu}m$ hole diameter and $230{\mu}m$ length.

• Proceedings of the KIEE Conference
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• 1995.07c
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• pp.1428-1430
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• 1995

In this study we fabricate Knife type Si-tip array using (110) Si wafer. We can fabricate vertical structure by anisotropic etching using EPW and observe it by SEM. After the step, we perform isotropic etching and oxidation sharpening of the structure and also observe it by SEM, respectively. The purpose of isotropic etching is to reduce the oxidation time. We attain a optimal tip whose radius is about $100{\AA}$ after anisotropic etching 2.25 min.+isotropic etching 5 min.+oxidation 1 hour and 23 min.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.70-71
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• 2007

Multicrystalline silicon(mc-Si) solar cells are steadily increasing their share of the PV market due to the lower material costs. However, commercial mc-Si solar cells have lower efficiency than singlecrystalline silicon solar cells. To improve efficiency of mc-Si solar cells, it is important to reduce optical losses from front surface reflection. Isotropic etching with acid solution based on hydrofluoric acid(HF) and nitric acid$(HNO_3)$ is one of the promising methods that can reduce surface reflectance for mc-Si solar cells. Anisotropic etching is not suitable for mc-Si because of its various grain orientations. In this paper, we isotropically etched mc-Si using acid solution. After that, etched surface was observed by Scanning Electron Microscope(SEM) and surface reflectance was measured. We obtained 29.29% surface reflectance by isotropic etching with acid solution in wavelength from 400nm to 1000nm for fabrication of mc-Si solar cells.

• Proceedings of the KIEE Conference
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• 1994.07b
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• pp.1250-1253
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• 1994

(100), (110) and (111) Si wafers are etched by isotropic etching method, anisotropic etching method using KOH etchant and EPW etchant and combined two-step etching method to compare the results. Isotopic etching method is effective in fabrication of wedge-shaped tips, especially (110) Si. Anisotropic etching method of (100) Si using EPW etchant can fabricate sharp cone-shaped tips and isotropic etching after anisotropic etching of (100) Si can fabricate wedge-shaped tips.

• Journal of the Semiconductor & Display Technology
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• v.10 no.4
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• pp.31-35
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• 2011

For high efficiency of Si-cells, Si wafers were textured by the KOH and NaOH etching solution to decreas the reflectance at surfaces of the cells. The textured surfaces were shown various types such as isotropic and anisotropic depending on the etching solution. The reflectance at sample of an anisotropic form with pyramid type was lower than that of isotropic form. The surface with isotropic form of general tiny circles on the surface increased the efficiency, however, the reflectance of it was increased. The efficiency was increased on surface with low roughness.

• Journal of the Korean Electrochemical Society
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• v.14 no.4
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• pp.191-195
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• 2011

Wet chemical etching methods were utilized to conduct Si surface texturing, which could enhance photoelectrochemical hydrogen generation rate. Two different etching methods tested, which were anisotropic metal-catalyzed electroless etching and isotropic etching. The Si nano-texture that was fabricated by the anisotropic etching showed ~25% increase in photocurrent for H2 generation. The photocurrent enhancement was attributed to the reduced reflection loss at the nano-textured Si surface, which provided a layer of intermediate density between water and the Si substrate.

• Electrical & Electronic Materials
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• v.10 no.7
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• pp.645-650
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• 1997

We manufactured CoNbZr/Cu/CoNbZr multi-layer films by rf magnetron sputtering methods and formed the patterns on the deposited multi-layer films. In this study, we fabricated a new etchant for forming the patterns by the wet etching with etchant and we searched for the best etching conditions and the etchant composition. Cu was etched selectively independent on the concentration of iron chloride solution, but amorphous CoNbZr thin film did not. The etchant was achieved by iron chloride solution(17.5 mol%) mixed with HF (20 mol%) during 150 sec, which etched CoNbZr/Cu/CoNbZr multi-layer films at the same time. Also, the etchant etched CoNbZr/Cu/CoNbZr multi-layer films by the three-step. It was shown that the cross-section had the isotropic structure and excellent etching characteristics with the above etchant.

• Journal of the Korean Ceramic Society
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• v.46 no.6
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• pp.685-688
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• 2009

Surface Texturing is very important process for high cell efficiency in crystalline silicon solar cell. Anisotropic texturing with an alkali etchant was known not to be able to produce uniform surface morphology in multi-crystalline silicon (mc-Si), because of its different etching rate with random crystal orientation. In order to reduce surface reflectance of mc-Si wafer, the general etching tendency was studied with HF/HN$O_3$/De-ionized Water acidic solution. And the surface structures of textured mc-Si in various HF/HN$O_3$ ratios were compared. The surface morphology and reflectance of textured silicon wafers were measured by FE-SEM and UVvisible spectrophotometer, respectively. We obtained average reflectance of $16{\sim}19$% for wavelength between 400 nm and 900 nm depending on different etching conditions.

• 한국신재생에너지학회:학술대회논문집
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• 2007.11a
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• pp.264-267
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• 2007

It is important to reduce optical losses from front surface reflection to improve the efficiency of crystalline silicon solar cells. Surface texturing by isotropic etching with acid solution based on HF and $HNO_3$ is one of the promising methods that can reduce surface reflectance. Anisotropic texturing with alkali solution is not suitable for multicrystalline silicon wafers because of its various grain orientations. In this paper, we textured multicrystalline silicon wafers by simple wet chemical etching using acid solution to reduce front surface reflectance. After that, surface morphology of textured wafer was observed by Scanning Electron Microscope(SEM) and Atomic Force Microscope(AFM), surface reflectance was measured in wavelength from 400nm to 1000nm. We obtained 29.29% surface reflectance by isotropic texturing with acid solution in wavelength from 400nm to 1000nm for fabrication of multicrystalline silicon solar cells.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2005.10a
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• pp.182-185
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• 2005

Indentation pattern and line pattern were machined on borosilicate(Pyrex 7740 glass) surface using the combination of mechanical machining by $Nanoi-indenter\circledR$ XP and HF wet etching, and a etch-mask effect of the affected layer of the nano-scratched and indented Pyrex 7740 glass surface was investigated. In this study, effects of indentation and scratch process with etching time on the morphologies of the indented and scratched surfaces after isotropic etching were investigated from an angle of deformation energies.