• Title/Summary/Keyword: isolation device

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The Protective Co-ordination between Low-Voltage Circuit-Breaker (저압차단기기의 보호협조)

  • Park, S.C.;Oh, J.S.;Lee, B.W.;Ryu, M.J.;Seo, J.M.
    • Proceedings of the KIEE Conference
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    • 2001.11b
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    • pp.340-343
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    • 2001
  • In an electrical network, electrical power are transmitted by a various of protection, isolation and control electric circuit devices. This thesis deals with the protection function between circuit-breakers. The protective coordination concerns the behaviour of two devices placed in series in an electrical network, with a short-circuit downstream circuit-breaker. It has two basic principles: First, discrimination which is an increasing requirement of low voltage electrical distribution systems. Second, which is less well known: cascading, which consists of installing a device, whose breaking capacity is less than the three-phase short-circuit current at its terminals and helped by main circuit-breaker. The important advantage of cascading is to be able to install at a branch circuit-breaker of a lesser performance without endangering the safety of the installation for more economical usage. To determine and guarantee co-ordination between two circuit breakers, it is necessary to carry out a theoretical approach, first, and then confirm the results by means of standard tests. This is illustrated in appendix A of IEC 947-2.

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A Study on Refresh Time Improvement of DRAM using the MEDICI Simulator (MEDICI 시뮬레이터를 이용한 DRAM의 Refresh 시간 개선에 관한 연구)

  • 이용희;이천희
    • Journal of the Korea Society for Simulation
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    • v.9 no.4
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    • pp.51-58
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    • 2000
  • The control of the data retention time is a main issue for realizing future high density dynamic random access memory. The novel junction process scheme in sub-micron DRAM cell with STI(Shallow Trench Isolation) has been investigated to improve the tail component in the retention time distribution which is of great importance in DRAM characteristics. In this' paper, we propose the new implantation scheme by gate-related ion beam shadowing effect and buffer-enhanced ${\Delta}Rp$ (projected standard deviation) increase using buffered N-implantation with tilt and 4X(4 times)-rotation that is designed on the basis of the local-field-enhancement model of the tail component. We report an excellent tail improvement of the retention time distribution attributed to the reduction of electric field across the cell junction due to the redistribution of N-concentration which is Intentionally caused by ion Beam Shadowing and Buffering Effect using tilt implantation with 4X-rotation. And also, we suggest the least requirements for adoption of this new implantation scheme and the method to optimize the key parameters such as tilt angle, rotation number, Rp compensation and Nd/Na ratio. We used MEDICI Simulator to confirm the junction device characteristics. And measured the refresh time using the ADVAN Probe tester.

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Design of Switchable and Reconfigurable Semi-lumped Wideband Bandpass Filter

  • Xiong, Yang;Wang, LiTian;Zhang, Wei;Pang, DouDou;Zhang, Fan;He, Ming
    • ETRI Journal
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    • v.39 no.5
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    • pp.756-763
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    • 2017
  • A switchable single-wideband (SWB)-to-dual-wideband (DWB) bandpass filter (BPF), which is realized by using lumped switches, is presented in this paper. By alternating the operation modes-ON and OFF-in which the ON mode is achieved by placing the capacitors at the switching spots and the OFF mode is achieved by replacing the capacitors with inductors, DWB-to-SWB BPF can be achieved on the same device. In addition, by changing the capacitor values, the center frequency (CF) of the lower passband of DWB BPF can be easily tuned from 1.69 GHz to 2.22 GHz, while the higher passband stays almost unchanged. As an example, an SWB-to-DWB BPF is designed, fabricated, and measured. This BPF exhibits good performance including wideband, high isolation, compact size, and ability to switch.

Fast Component Placement with Optimized Long-Stroke Passive Gravity Compensation Integrated in a Cylindrical/Tubular PM Actuator

  • Paulides, J.J.H.;Encica, L.;Meessen, K.J.;Lomonova, E.A.
    • Journal of international Conference on Electrical Machines and Systems
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    • v.2 no.3
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    • pp.275-282
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    • 2013
  • Applications such as vibration isolation, gravity compensation, pick-and-place machines, etc., would benefit from (long-stroke) cylindrical/tubular permanent magnet (PM) actuators with integrated passive gravity compensation to minimize the power consumption. As an example, in component placing (pick-and-place) machines on printed circuit boards, passive devices allow the powerless counteraction of translator including nozzles or tooling bits. In these applications, an increasing demand is arising for high-speed actuation with high precision and bandwidth capability mainly due to the placement head being at the foundation of the motion chain, hence, a large mass of this device will result in high force/power requirements for the driving mechanism (i.e. an H-bridge with three linear permanent magnet motors placed in an H-configuration). This paper investigates a tubular actuator topology combined with passive gravity compensation. These two functionalities are separately introduced, where the combination is verified using comprehensive three dimensional (3D) finite element analyses.

Pounding analysis of RC bridge considering spatial variability of ground motion

  • Han, Qiang;Dong, Huihui;Du, Xiuli;Zhou, Yulong
    • Earthquakes and Structures
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    • v.9 no.5
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    • pp.1029-1044
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    • 2015
  • To investigate the seismic pounding response of long-span bridges with high-piers under strong ground motions, shaking table tests were performed on a 1/10-scaled bridge model consisting of three continuous spans with rigid frames and one simply-supported span. The seismic pounding responses of this bridge model under different earthquake excitations including the uniform excitation and the traveling wave excitations were experimentally studied. The influence of dampers to the seismic pounding effects at the expansion joints was analyzed through nonlinear dynamic analyses in this research. The seismic pounding effects obtained from numerical analyses of the bridge model are in favorable agreement with the experimental results. Seismic pounding effect of bridge superstructures is dependent on the structural dynamic properties of the adjacent spans and characteristics of ground motions. Moreover, supplemental damping can effectively mitigate pounding effects of the bridge superstructures, and reduce the base shear forces of the bridge piers.

A Study on the Design and Chracteristic Analysis for Noise Cut Transformer (NCT 설계 및 특성 분석에 관한 연구)

  • 이재복;허창수
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.12 no.4
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    • pp.146-154
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    • 1998
  • Broadband noise with frequency components in the range from several kHz up the tens of MHz is a major obstacle factor in normal operation of the AC line to supply the power to electrical and electronic control equipments. Because this kind of noise could damage the device or could be a source of malfunction, many devices such as filter and surge suppressor are used to cut off the noise. But those devices could not disconnected from the power line, so they result in poor common-mode of NCT as well as insulation characteristics as a isolation transformer in addition faraday shielding and proposed analysis model of NCT having tow functions of surge and noise reduction. The simulated and experimental results for the surge suppression characteristics are compared and evaluated for designed protype 1[kVA] NCT.

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DC Characteristics of n-MOSFET with $Si_{0.88}Ge_{0.12}$ Heterostructure Channels ($Si_{0.88}Ge_{0.12}$ 이종접합 구조의 채널을 이용한 n-MOSFET의 DC 특성)

  • Choi, Sang-Sik;Yang, Hyun-Duk;Han, Tae-Hyun;Cho, Deok-Ho;Lee, Nae-Eung;Shim, Kyu-Hwan
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.06a
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    • pp.150-151
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    • 2006
  • $Si_{0.88}Ge_{0.12}$/Si heterostructure channels grown by RPCVD were employed to n-type metal oxide semiconductor field effect transistors(MOSFETs), and their electrical properties were investigated. SiGe nMOSFETs presented very high transconductance compared to conventional Si-bulk MOSFETs, regardless substantial drawbacks remaining in subthreshold-slope, $I_{off}$, and leakage current level. It looks worthwhile to utilize excellent transconductance properties into rf applications requesting high speed and amplification capability, although optimization works on both device structure and unit processes are necessary for enhanced isolation and reduced power dissipation.

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EMC Safety Margin Verification for GEO-KOMPSAT Pyrotechnic Systems

  • Koo, Ja-Chun
    • International Journal of Aerospace System Engineering
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    • v.9 no.1
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    • pp.1-15
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    • 2022
  • Pyrotechnic initiators provide a source of pyrotechnic energy used to initiate a variety of space mechanisms. Pyrotechnic systems build in electromagnetic environment that may lead to critical or catastrophic hazards. Special precautions are need to prevent a pulse large enough to trigger the initiator from appearing in the pyrotechnic firing circuits at any but the desired time. The EMC verification shall be shown by analysis or test that the pyrotechnic systems meets the requirements of inadvertent activation. The MIL-STD-1576 and two range safeties, AFSPC and CSG, require the safety margin for electromagnetic potential hazards to pyrotechnic systems to a level at least 20 dB below the maximum no-fire power of the EED. The PC23 is equivalent to NASA standard initiator and the 1EPWH100 squib is ESA standard initiator. This paper verifies the two safety margins for electromagnetic potential hazards. The first is verified by analyzing against a RF power. The second is verified by testing against a DC current. The EMC safety margin requirement against RF power has been demonstrated through the electric field coupling analysis in differential mode with 21 dB both PC23 and 1EPWH100, and in common mode with 58 dB for PC23 and 48 dB for 1EPWH100 against the maximum no-fire power of the EED. Also, the EMC safety margin requirement against DC current has been demonstrated through the electrical isolation test for the pyrotechnic firing circuits with greater than 20 dB below the maximum no-fire current of the EED.

Seismic Response of Arch Structure with Base Isolation Device Depending on Installation Angle (면진장치 설치각도에 따른 아치구조물의 지진응답)

  • Kim, Gee-Cheol;Lee, Joon-Ho
    • Journal of Korean Association for Spatial Structures
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    • v.22 no.1
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    • pp.25-32
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    • 2022
  • The seismic behaviors of the arch structure vary according to the rise-span ratio of the arch structure. In this study, the rise-span ratio (H/L) of the example arch structure was set to 1/4, 1/6, and 1/8. And the installation angle of the seismic isolator was set to 15°, 30°, 45°, 60° and 90°. The installation angles of the seismic isolator were set by analyzing the horizontal and vertical reaction forces according to the rise-span ratio of the arch structure. Due to the geometrical and dynamic characteristics of the arch structure, the lower the rise-span ratio, the greater the horizontal reaction force of the static load, but the smaller the horizontal reaction force of the dynamic load. And if the seismic isolator is installed in the direction of the resultant force of the reaction forces caused by the seismic load, the horizontal seismic response becomes small. Also, as the installation angle of the seismic isolator increases, the hysteresis behavior of the seismic isolator shows a plastic behavior, and residual deformation appears even after the seismic load is removed. In the design of seismic isolators for seismic response control of large space structures such as arch structures, horizontal and vertical reaction forces should be considered.

Integration Technologies for 3D Systems

  • Ramm, P.;Klumpp, A.;Wieland, R.;Merkel, R.
    • Proceedings of the International Microelectronics And Packaging Society Conference
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    • 2003.09a
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    • pp.261-278
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    • 2003
  • Concepts.Wafer-Level Chip-Scale Concept with Handling Substrate.Low Accuracy Placement Layout with Isolation Trench.Possible Pitch of Interconnections down to $10{\mu}{\textrm}{m}$ (Sn-Grains).Wafer-to-Wafer Equipment Adjustment Accuracy meets this Request of Alignment Accuracy (+/-1.5 ${\mu}{\textrm}{m}$).Adjustment Accuracy of High-Speed Chip-to-Wafer Placement Equipment starts to meet this request.Face-to-Face Modular / SLID with Flipped Device Orientation.interchip Via / SLID with Non-Flipped Orientation SLID Technology Features.Demonstration with Copper / Tin-Alloy (SLID) and W-InterChip Vias (ICV).Combination of reliable processes for advanced concept - Filling of vias with W as standard wafer process sequence.No plug filling on stack level necessary.Simultanious formation of electrical and mechanical connection.No need for underfiller: large area contacts replace underfiller.Cu / Sn SLID layers $\leq$ $10{\mu}{\textrm}{m}$ in total are possible Electrical Results.Measurements of Three Layer Stacks on Daisy Chains with 240 Elements.2.5 Ohms per Chain Element.Contribution of Soldering Metal only in the Range of Milliohms.Soldering Contact Resistance ($0.43\Omega$) dominated by Contact Resistance of Barrier and Seed Layer.Tungsten Pin Contribution in the Range of 1 Ohm

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