• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.9
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• pp.1-9
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• 2004

Analytical expressions for breakdown voltages of abrupt pn junction in GaP, GaAs and InP of III-V binary semiconductors was induced. Getting analytical breakdown voltage, effective ionization coefficients were extracted using ionization coefficient parameters for each materials. The result of analytical breakdown voltages followed by ionization integral agrees well with numerical and experimental results within 10% in error.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 1999.05a
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• pp.385-388
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• 1999

A new local model for impact ionization coefficients is proposed to account for a non-local effect. New model uses an effective electric field which comes from the path integral of a tangent electric field at an arbitrary point. The model consists of local variables, such as doping concentration, carrier concentration and gradient of the field, and can be easily applied to a conventional drift-diffusion device simulator. By comparing the results with Monte Carlo simulation, it is confirmed that new model explains the non-local effect fairly well.

• Journal of the Korean Chemical Society
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• v.35 no.5
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• pp.469-479
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• 1991

According to the recent paper by B. Fricke (J. Chem. Phys. 84, 862 (1986)), it is reported that the atomic polarizability (${\alpha}$) correlates very strongly with the first ionization potential (IP) within the groups of elements. In our study, we obtained very significant correlations between $ln\alpha$ and IP as well as lnIP by employing the least squares method. In examining the correlations of various atomic electronegativities with their first ionization potentials and the atomic polarizability within the groups of elements, good correlation coefficients are obtained except for groups 3a and 4a. Within the periods of elements, good correlation coefficients are obtained with no exception. This allows a very good prediction of various atomic polarizabilities undetermined.

• Proceedings of the KIEE Conference
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• 2006.10b
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• pp.159-162
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• 2006

In this paper energy distribution function in $SiH_4$ has been analysed over the E/N range 0.5${\sim}$300Td and Pressure value 0.5, 1.0, 2.5 Torr by a two-term approximation Boltzmann equation method and by a Monte Carlo simulation. The motion has been calculated to give swarm parameters for the electron drift velocity, diffusion coefficient, electron ionization, mean energy and the electron energy distribution function. The electron energy distribution function has been analysed in $SiH_4$ at E/N=30, 50Td for a case of the equilibrium region in the mean electron energy and respective set of electron collision cross sections. The results show that the deduced electron drift velocities, the electron ionization or attachment coefficients, longitudinal and transverse diffusion coefficients and mean energy agree reasonably well with theoretical for a rang of E/N values.

• International Journal of Aeronautical and Space Sciences
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• v.17 no.4
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• pp.455-466
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• 2016

Chemical-kinetic parameters of the equilibrium constants to evaluate the reverse rate coefficients in the shock layer of a blunt body and the expanding flows are derived for the temperature range from 300 K to 20,000 K. The expanded equilibrium constants for the chemical reactions of the dissociation, ionization, associative ionization, and neutral and charge exchange reactions of the atmospheric species and carbon materials are proposed in the present work. In evaluating the equilibrium constants, the inter-nuclear potential energies of the molecular species are calculated by the analytical potential function of the Hulburt-Hirschfelder model, and the parameters of the analytical model are determined from the semi-classically calculated RKR potentials. The electronic states and energies of the atoms are calculated by the electronic energy grouping model, and the rovibrational states and energies of each electronic states of the molecules are evaluated by the WKB method. The expanded equilibrium constants for 31 types of the reactions are provided for the best curve-fit functions, and the recombination reaction rate coefficients evaluated from the present equilibrium constants are compared with existing measured values.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.22 no.8
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• pp.104-108
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• 2008

Accurate sets of electron collision cross sections and the electron transport coefficients for atoms and molecules are necessary for quantitative understanding of plasma phenomena Kr and Xe atom are used in many industrial applications, such as in PDP and fluorescent induction lamps(FILs). Therefore, we analysed and calculated the electron transport coefficients, the electron drift velocity W, the longitudinal and transverse diffusion coefficient $ND_L$ and $ND_T$, and the ionization coefficient $\alpha$/N in pure Kr and Xe gases over the wide E/N range from 0.001 to 500[Td] at 1[Torr] by two-tenn approximation of the Boltzmann equation.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.39 no.1
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• pp.12-17
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• 2002

In this paper, an effective ionization coefficient for 4H-SiC is extracted in the form of c .E$^{m}$ from ionization coefficients of electron and hole. Analytical expressions for critical electric field and breakdown voltage of 4H-SiC p$^{+}$n junction are derived by employing the effective ionization coefficient. The analytic results agree well with the experimental ones reported within 10% in error for the doping concentration in the range of 10$^{15}$ cm$^{-3}$ ~10$^{18}$ cm$^{-3}$ . .

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.4
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• pp.226-231
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• 1999

Temperature dependence of effective ionization coefficients in GaAs is formulated as a single polynomial function of temperature, which allows analytical expressions for breakdown voltage of GaAs $p^+n$ junctions as a function of temperature. At 300 K, extracted effective ionization coefficient of GaAs $p^+n$ junction especially agrees well with the published result of <111> oriented GaAs. The analytic results agree with the simulation as well as the experimental ones reported within 10% in error for the doping concentrations in the range of $10_{14}cm_{-3}~10_{17}cm_{-3}$ at 100 K, 300 K and 500 K.

• 전자공학회논문지 IE
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• v.44 no.1
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• pp.10-14
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• 2007

Analytical expression for breakdown voltages of InP diodes is induced by employing the effective ionization coefficient extracted from ionization coefficients for electron and hole in InP. The analytical results for breakdown voltage are compared with numerical and experimental results for the doping concentration, $N_D=6\times10^{14}cm^{-3}\sim3\times10^{17}cm^{-3}$. The analytical results show good agreement with the numerical data. Good fits with the experimental results are found for the breakdown voltages within 10% in error at each doping concentration.

• The Proceedings of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.10 no.6
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• pp.96-103
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• 1996

This paper describes the electron transport characteristics in SF6 gas calculated for range of E/N values from 150~ 800[Td) by the Monte Carlo simulation and Boltzmann equation method using a set of electron collision cross sections detennined by the authors and the values of electron swarm parameters are obtained by TOF method. The results gRined that the values of the electron swarm parameters such as the electron drift velocity, the electron ionization or Rttachment coefficients, longitudinal and transverse diffusion coefficients agree with the experimental and theoretical for a range of E/N. The properties of electron avalanches is concerned electron energy non--equilibrium region. The electron energy distributions function were analysed in sulphur hexafluoride at E/N : 500~800[Td) for a case of non-equilibrium region in the mean electron energy. The validity of the results obtained has been confilll1ed by a TOF method.