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Analytical Model of Breakdown Voltages for Abrupt pn Junctions in III-V Binary Semiconductors  

정용성 (서라벌대학 멀티미디어학부)
Publication Information
Journal of the Institute of Electronics Engineers of Korea SD / v.41, no.9, 2004 , pp. 1-9 More about this Journal
Abstract
Analytical expressions for breakdown voltages of abrupt pn junction in GaP, GaAs and InP of III-V binary semiconductors was induced. Getting analytical breakdown voltage, effective ionization coefficients were extracted using ionization coefficient parameters for each materials. The result of analytical breakdown voltages followed by ionization integral agrees well with numerical and experimental results within 10% in error.
Keywords
Breakdown Voltages; Abrupt pn Junction; III-V Binary Semiconductors; Effective ionization Coefficient;
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