Browse > Article

Analytical Breakdown Voltage for 4H-SiC ${p^+}$ Junction  

Jeong, Yong-Seong (서라벌대학, 컴퓨터정보학부)
Publication Information
Journal of the Institute of Electronics Engineers of Korea SD / v.39, no.1, 2002 , pp. 12-17 More about this Journal
Abstract
In this paper, an effective ionization coefficient for 4H-SiC is extracted in the form of c .E$^{m}$ from ionization coefficients of electron and hole. Analytical expressions for critical electric field and breakdown voltage of 4H-SiC p$^{+}$n junction are derived by employing the effective ionization coefficient. The analytic results agree well with the experimental ones reported within 10% in error for the doping concentration in the range of 10$^{15}$ cm$^{-3}$ ~10$^{18}$ cm$^{-3}$ . .
Keywords
Citations & Related Records
Times Cited By KSCI : 1  (Citation Analysis)
연도 인용수 순위
1 R. Raghunathan, B. J. Baliga, 'P-type 4H and 6H-SiC high voltage Schottky barrier diodes,' IEEE Electron Device Letters, Vol. 19, pp. 71-73, 1998   DOI   ScienceOn
2 B. J. Baliga, 'Power semiconductor devices for variable-frequency drivers,' Proc. IEEE, Vol. 82, pp. 1112-1122, 1994   DOI   ScienceOn
3 H. Morkoc, S. Strife, G. B. Gao, M. E. Lin, B. Sverdlov, and M Bums, 'Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologies,' J. Appl. Phys., Vol. 76, pp. 1363-1398, 1994   DOI   ScienceOn
4 M. W. Shin, G. L. Bilbro, and R. J. Trew, 'High temperature operation of N-type 6H-SiC and P-type diamond MESFET's,' in IEEE/ Cornell Conf., Ithaca, NY, 1993, pp. 421-430
5 K. J. Schoen, J. M. Woodall, J. A. Cooper, Jr., and M. R. Melloch, 'Design considerations and experimental analysis of high-voltage SiC Schottky barrier rectifiers,' IEEE Trans. Electron Devices, Vol. 45, pp. 1595-1604, 1995   DOI   ScienceOn
6 W. J. Schaffer, G. H. Negley, K. G Irvine, and J. W. Palmour, 'Conductivity anisotropy in epitaxial 6H and 4H-SiC,' in Proc. Mat. Res. Soc. Symp, Vol. 339, pp. 595-600, 1994
7 M. Bhatnagar and B. J. Baliga, 'Comparison of 6H-SiC, 3C-SiC, and Si for power devices,' IEEE Trans. Electron Devices, Vol. 40, No. 3, pp. 645-655, 1993   DOI   ScienceOn
8 M. Ruff, H. Mtlehner, and R. Helbig, 'SiC devices : physics and numerical simulation,' IEEE Trans. Electron Devices, Vol. 41, pp. 1040-1054, 1994   DOI   ScienceOn
9 D. L Barrett and R B. Campbell, 'Electron mobility measurements in SiC polytypes,' J. Appl. Phys., Vol. 38, pp. 53-55, 1967   DOI
10 A. Itoh, H. Akita, T. Kirnoto, and H. Matsunami, 'High-quality 4H-SiC homoepitaxial layers grown by step-controlled epitaxy,' Appl. Phys. Lett., Vol. 65, pp. 1400-1402, 1994   DOI   ScienceOn
11 A. Itoh, T. Kirnoto, and H Matsunami, 'High performance of high-voltage 4H-SiC Schottky barrier diodes,' IEEE Electron Device Letters, Vol. 16, pp. 280-282, 1995   DOI   ScienceOn
12 T. H. Moon, Y. I. Choi, and S. K. Chung, 'Calculation of avalanche breakdown voltage of the InP $p^+-n$ junction,' Solid State Electronics, Vol. 37, pp. 187-188, 1994   DOI   ScienceOn
13 H. Matsunami, 'Progress of semiconductor silicon carbide(SiC),' Electronics and Communications in Japan, Part 2, Vol. 81, pp. 38-44, 1998   DOI   ScienceOn
14 A. Itoh, T. Kirnoto, and H. Matsunami, 'Excellent reverse blocking characteristics of high-voltage 4H-SiC Schottky rectifiers with boron-implanted edge termination,' IEEE Electron Device Letters, Vol. 17, pp. 139-141, 1996   DOI   ScienceOn
15 D. Alok, R. Raghunathan, and B. J. Baliga, 'Planar edge termination for 4H-silicon carbide devices,' IEEE Trans. Electron Devices, Vol. 43, pp. 1315-1317, 1996   DOI   ScienceOn
16 R. Raghunathan, D. Alok, and B. J. Baliga, 'High voltage 4H-SiC Schottky barrier diodes,' IEEE Electron Device Letters, Vol. 16, pp. 226-227, 1995   DOI   ScienceOn
17 J. Wang and B. W. Williams, 'Evaluation of high-voltage 4H-SiC switching devices,' IEEE Trans. Electron Devices, Vol. 46, pp. 589-597, 1999   DOI   ScienceOn
18 S. Selberherr, Analysis and Simulation of Semiconductor Devices, Wien, Austria: Springer-Verlag, 1984
19 W. Fulop, 'Calculation of avalanche breakdown of silicon p-n junctions,' Solid State Electronics, Vol. 10, pp. 39-43, 1967   DOI   ScienceOn
20 Y. S. Chung, S. Y. Han, Y. I. Choi, and S. K. Chung, 'Closed-form analytical expressions for the breakdown voltage of GaAs parallel-plane $p^+n$ junction in <100>, <110>, and <111> orientations,' Solid State Electronics, Vol. 39, pp. 1678-1680, 1996   DOI   ScienceOn
21 J. W. Palmour, Cree Research, Triangle Park, NC, private communication
22 B. J. Baliga, Modern Power Devices, Wiley, New York, pp. 62-92, 1987
23 정용성, '6H-SiC $p^+n$ 접합의 항복 전압을 위한 해석적 모형,' 전자공학회논문지, 제38권, SD편, pp. 398-403, 2001   과학기술학회마을