• Advances in nano research
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• 제3권2호
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• pp.81-96
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• 2015

Octahedral shaped single crystalline undoped and Ga-doped indium oxide nano-and microcrystals were fabricated using vapor-solid growth process. Effects of Ga doping on the crystallinity, defect structure, and optical properties of the nano-/microstructures have been studied using scanning electron microscopy, microRaman spectroscopy, transmission electron microscopy and cathodoluminescence spectroscopy. It has been observed that incorporation of Ga does not affect the morphology of $In_2O_3$ structures due to its smaller ionic radius, and similar oxidation state as that of In. However, incorporation of Ga in high concentration (~3.31 atom %) causes lattice compression, reduces optical band gap and defect induced CL emissions of $In_2O_3$ nano-/microcrystals. The single crystalline Ga-doped, $In_2O_3$ nano-/microcrystals with low defect contents are promising for optoelectronic applications.

• 대한화학회지
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• 제29권6호
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• pp.608-614
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• 1985

$ZrO_2$가 10, 20, 30, 40, 그리고 50 mol% 포함된 $ZrO_2-Sm_2O_3$계의 전기전도도를 500 ~ 1000$^{\circ}C$와 $10^{-5}~10^{-1}Po_2$ atm에서 측정하였다. 전기전도도를 온도의 함수로 도시한 결과 650$^{\circ}C$ 근처에서 온도의존성이 큰 고온영역과 적은 저온영역으로 구분되었으며 두 개의 각기 다른 결함구조를 보여 주었다. 전기전도도가 산소분압의 증가에 따라 증가하므로 P형의 전자성 반도체이며 고온영역에서 산소압력의존성은 ${\sigma}{\propto}Po_2^{1/5.3}$, 저온영역에서 ${\sigma}{\propto}Po_2^{1/6}$에 가까운 값을 나타냈다. ${\sigma}{\propto}Po_2^{1/5.3}$인 영역에서의 defect는 Oi"이며 ${\sigma}{\propto}Po_2^{1/6}$인 영역에서의 defect는 $Vs_m$"'이다. 고온영역에서 carrier type은 electron hole이며 저온영역에서는 이온성의 기여도가 있다. 이러한 이온성의 기여는 dopant의 양이 증가할 수록 커진다. 60mol% 가 포함된 $ZrO_2-Sm_2O_3$계에서는 전기전도도는 산소압력이 감소함에 따라 증가하였다.

• 한국세라믹학회지
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• 제47권1호
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• pp.19-25
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• 2010

Traditional Kr$\ddot{o}$ger-Vink (K-V) notation defines sites in ionic crystals as interstitial or belonging to host ions. It enables description and calculations of combinations of native and foreign defects, including dopants and substituents. However, some materials exhibit inherently disordered partial occupancy of ions and vacancies, or partial occupancy of two types of ions. For instance, the high temperature disordered phases of $Bi_2O_3$, $Ba_2In_2O_5$, $La_2Mo_2O_9$, mayenite $Ca_{12}Al_{14}O_{33}$, AgI, and $CsHSO_4$ are all good ionic conductors and thus obviously contain charged point defects. But traditional K-V notation cannot account for a charge compensating defect in each case, without resorting to terms like "100% substitution" or "Frenkel disorder". the former arbitrary and awkward and the latter inappropriate. Instead, a K-V compatible nomenclature in which the partially occupied site is defined as the perfect site, has been proposed. I here introduce it thoroughly and provide a number of examples.

• 한국결정성장학회지
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• 제29권5호
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• pp.187-191
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• 2019

고체전지, 산화물연료전지, 센서, 산화물 분리막 등 에너지 재료로 활용이 무궁한 산소 이온 전도체 중 acceptor가 첨가된 $LaAlO_3$의 전기적 특성과 고온에서의 혼합전도체로 사용 가능성을 연구하였다. Sr과 Mg을 $LaAlO_3$에 동시에 첨가하여 만든 LSAM의 전기적 특성을 교류(a.c.)와 직류(d.c.) 방법을 이용하여 다양한 산소 분압에서 측정하였다. 교류 임피던스 방법을 이용하여 LSAM의 전체 저항에서 입자(grain) 저항과 입계(grain boundary) 저항을 분리한 결과, $550^{\circ}C$ 이하의 온도에서는 입계 저항이 지배적이나 $800^{\circ}C$ 이상의 온도에서는 입자 저항이 대부분임을 알 수 있었다. 또 산소분압에 따른 전도도 측정을 물질의 결함모델(defect model)을 이용하여 분석해 전체 전도도를 이온 전도도와 전자 전도도로 분리하였다. 그 결과, $800^{\circ}C$ 이상의 고온에서 LSAM은 낮은 산소분압($Po_2$ < $10^{-10}atm$)에서는 산소이온 전도체이고 높은 산소분압($Po_2$ > $10^{-5}atm$)에서는 혼합전도체의 거동을 보였다. 또 온도가 증가하여도 산소이온 전도가 주도적인 산소분압의 영역은 줄어들지 않았고 낮은 산소분압에서도 안정적인 전기적 특성을 보이는 등으로 보아, LSAM은 고온의 낮은 산소분압(T > $1500^{\circ}C$, $Po_2$ < $10^{-10}atm$) 조건에서 용강에서의 산소이온센서와 같은 산소이온체로의 사용 가능성이 높다.

• The Korean Journal of Ceramics
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• 제4권2호
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• pp.146-150
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• 1998

The total conductivity and oxygen permeation in (Ce1-xZrxO2)0.9(CaO)0.1 solid solutions were measure das a function of temperature and oxygen partial pressure. Empirically, σ at given x and T was expressed essentially by σ=σo2+σeo Po2-1/4, where σo2 and σeo are constant. Applying a standard defect model in which major defects are Cace", Cece' and Vo in ideal solution, we can assign σo2 as the oxide ion conductivity decreases while the electronic conductivity increases with the increase in Zr content. Using the oxide ion and electronic conductivities thus determined, the oxygen permeation flux was calculated for respective Po2 and T conditions at which the measurements were made. The calculated values were found to agree with the observed ones.

• 한국재료학회지
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• 제2권3호
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• pp.207-212
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• 1992

과잉의 CaO와 $TiO_2$를 각각 포함한 $CaTiO_3$의 결함구조를 평형상태의 전기전도도를 $85O^{\circ}C$와 $1050^{\circ}C$사이에서 산소분압의 함수로 측정하여 연구하였다. 과잉의 CaO는 A site와 B site에 나누어져서 용해되어 $Ca_{Ti}$"와 Vo", 결함을 생성하였으며, 과잉의 $TiO_2$는 $V_{Ca}$"과 Vo"을 생성했다. 평형상태의 전기전도도는 CaO 용해도 5000ppm과 $TiO_2$ 용해도 2000ppm을 각각 나타냈다. 과잉의 양이온에 의하여 생성된 산소공공은 이온전도를 하여 넓은 영역의 산소 분압에 무관한 전도도 최소값을 보였으며, 반대로 대전된 음이온 결함과 결함쌍은 관찰되지 않았다.온 결함과 결함쌍은 관찰되지 않았다.

• 한국세라믹학회지
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• 제54권4호
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• pp.323-330
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• 2017

To understand the defect chemistry of multiferroic $BiFeO_3-based$ systems, we synthesized nonstoichiometric $Bi_{1+x}FeO_{3{\pm}{\delta}}$ ceramics by conventional solid-state reaction method and studied their structural, dielectric and high-temperature charge transport properties. Incorporation of an excess amount of $Bi_2O_3$ lowered the Bi deficiency in $BiFeO_3$. Polarization versus electric field (P-E) hysteresis loop and dielectric properties were found to be improved by the $Bi_2O_3$ addition. To better understand the defect effects on the multiferroic properties, the high temperature equilibrium electrical conductivity was measured under various oxygen partial pressures ($pO_2{^{\prime}}s$). The charge transport behavior was also examined through thermopower measurement. It was found that the oxygen vacancies contribute to high ionic conduction, showing $pO_2$ independency, and the electronic carrier is electron (n-type) in air and Ar gas atmospheres.

• 한국세라믹학회지
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• 제29권11호
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• pp.855-862
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• 1992

Thermoelectric power, electrical conductivity and Hall effect were measured, as functions of temperature in the range of 100 to 600 K, on polycrystalline Bi4/3Sb2/3Te3 which had been prepared via uniaxial hot-pressing at different temperatures in the range of 373 K to 773 K, aiming at searching a profitable processing route to a polycrystalline thermoelectric material, a promising, viable alternative to a single crystalline one. It was found that, with increasing temperature of pressing under a fixed pressure, the material, normally a p-type prior to being hot-pressed, underwent a transition to n-type. This transition was confirmed to be due to plastic deformation during hot-pressing and interpreted as being attributed to the change of the major ionic defect BiTe' into TeBi˙at temperature high enough for structure elements mobility. Thermoelectric figure-of-merit of the hot-pressed material was discussed in connection with the p-n transition in addition to microstructure.

• Bulletin of the Korean Chemical Society
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• 제9권1호
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• pp.21-24
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• 1988

The electrical conductivitv of the system $ThO_2-Ho_2O_3$ was measured in the temperature range 600-$1100^{\circ}C$ and $Po_2$range $10^{-5}-2{\times}10^{-1}$ atm. The mean value of activation energy was 1.45 eV. The observed conductivity dependence on $Po_2$ was ${Po_2}^{1/4}$ at $Po_2$'s above $10^{-3}$ atm and was independent on oxygen partial pressure at $Po_2$'s below $10^{-3}$ atm. It is suggested that these dependences are due to a mixed ionic plus electron hole conduction by Vo defect.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.192-192
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• 2011

Hyperthermal ion scattering experiments were conducted with low kinetic energy (<35 eV) cesium ion beams to analyze the UV-photolyzed water-ice films. Neutral molecules (X) on the surface were detected as cesium-molecule ion clusters ($CsX^+$) which were formed through a Reactive Ion Scattering (RIS) process. Ionic species on the surface were desorbed from the surface via a low energy sputtering (LES) process, and were analyzed [1]. Using these methods, the thermal stability of hydronium ion ($H_3O^+$) that was produced by UV light was examined. As the thermal stability of $H_3O^+$ is related with the reaction, $H_3O^+$ + OH + $e^-$ (or $OH^-$) ${\rightarrow}$ $2H_2O$, which is similar or same with the reverse reaction of the auto-ionization of water, the result from this work would be helpful to understand the auto-ionization of $H_2O$ in water-ice that has not been well-understood yet. However, as $H_3O^+$ was not detected through a LES method, the titration experiment of $H_3O^+$ with methylamine ($CH_3NH_2$, MA), MA + $H_3O^+\;{\rightarrow}\;MAH^+$ + $H_2O$, was conducted. In this case, the presence of $MAH^+$ indicates that of $H_3O^+$ in the ice. Thus the pristine ice was photolyzed with UV light for a few minutes and this photolyzed ice was remained at the certain temperature for minutes without UV light. Then MA was adsorbed on that surface so that the population of $H_3O^+$ was found. From the calibration experiments, the relation of $MAH^+$ and $H_3O^+$ was found, so that the thermal stability of $H_3O^+$ can be investigated [2].