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Sun, Yong-Bin
- Proceedings of the Korean Society Of Semiconductor Equipment Technology
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- 2002.11a
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- pp.123-126
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- 2002
For the mold die sticking mechanism, the major explanation is that EMC filler of silica wears die surface roughened, which results in increase of adhesion strength. As big differences in experimental results from semiconductor manufacturers are dependent on EMC models, however, chemisorptions or acid-base interaction is apt to be also functioning as major mechanisms. In this investigation, the plasma source ion implantation (PSII) using $O_2$, $N_2$, and $CF_4$ modifies sample surface to form a new dense layer and improve surface hardness, and change metal surface condition from hydrophilic to hydrophobic and vice versa. Through surface energy quantification by measuring contact angle and surface ion coupling state analysis by Auger, major governing mechanism for sticking issue was figured out to be a complex of mechanical and chemical factors.
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김동석;이철인;서용진;김태형;김창일;장의구
- Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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- 1992.05a
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- pp.86-90
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- 1992
We have studied the characteristics of n-and p-channel FETs with submicron channel length fabricated by twin-well process. Threshold voltage variation and potential distribution with channel ion implantation conditions and impurity profile of n-and p-channel region wee simulated using SUPREM-II and MINIMOS 4.0 simulater, P-channel FET had buried-channel in the depth of 0.15 $\mu\textrm{m}$ from surface by counter-doped boron ion implantation for threshold voltage adjustment. As a result of device measurement, we have obtained good drain saturation characteristics for 3.3 [V] opreation, minimized short channel effect with threshold voltage shift below 0.2[V], high punchthrough and breakdown voltage above 10[V] and low subthreshold value.
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Kim, Guang-Hoon;Choi, Young-Wook;Lee, Hong-Sik;Rim, Geun-Hie;Nikiforov, S.A.
- The Transactions of the Korean Institute of Electrical Engineers C
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- v.50 no.8
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- pp.401-408
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- 2001
The information of the ion composition in plasma applications is required to characterize a plasma. A better understanding of ion species composition ratio and its spacial distribution, etc. is thus necessary in plasma-related processes, such as thin film deposition, plasma-based ion implantation, semiconductor processing, and so on. In this research, a compact ion mass analyzer that is based on magnetic sector analyzer was developed and its operational characteristics were studied in nitrogen plasma.
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Kim H.B.;Hobler G.
- Proceedings of the Korean Society of Precision Engineering Conference
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- 2005.10a
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- pp.581-584
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- 2005
Ion beam processing is one of the key technologies to realize mastless and resistless sub 50nm nano fabrication. Unwanted effects, however, may occur since an energetic ion can interact with a target surface in various ways. Depending on the ion energy, the interaction can be swelling, deposition, sputtering, re-deposition, implantation, damage, backscattering and nuclear reaction. Sputtering is the fundamental mechanisms in ion beam induced direct patterning. Re-deposition and backscattering are unwanted mechanisms to avoid. Therefore understanding of ion beam-solid interaction should be advanced for further ion beam related research. In this paper we simulate some important interaction mechanisms between energetic incident ions and solid surfaces and the results are compared with experimental data. The simulation results are agreed well with experimental data.
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