• 한국자기학회지
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• 제8권1호
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• pp.6-12
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• 1998

플라즈마 이온주입 장치를 이용하여 $\alpha$-Fe foil에 질소 이온을 주입하여 질화철 결정상을 만들었으며, 이때 질소 이온 주입시간을 15분(FEN15)과 30분 (Fe30)으로 처리되었다. 오제 전자 분광법(Auger electron spectroscopy : AES)을 이용하여 측정한 주입된 질소 이온의 깊이는 사편 FeN15와 FeN30에서 각각 12000$\AA$과 40000$\AA$으로 나타난다. 진동 시편 자력계(vibrating sample magnetometer : VSM)측정결과 as-implanted 각각의 시편은 포화자화 값이 순수한 $\alpha$-Fe foil 보다 증가되었으며, 이는 $\alpha$'-Fe8N 또는 $\alpha$'-Fe16N2의 결정구조가 그원인으로 판단된다. 따라서 본 연구는 플라즈마 이온주입 방법으로 제작된 질화철에서 부분적인 $\alpha$'또는 $\alpha$'의 졀정구조 형성 가능성을 확인할 수 있었다.

• Journal of Korean Neurosurgical Society
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• 제64권6호
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• pp.853-863
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• 2021

Objective : Biodegradable poly-L-lactic acid (PLLA) with a highly biocompatible surface via tantalum (Ta) ion implantation can be an innovative solution for the problems associated with current biodegradable stents. The purpose of this study is to develop a Taimplanted PLLA stent for clinical use and to investigate its biological performance capabilities. Methods : A series of in vitro and in vivo tests were used to assess the biological performance of bare and Ta-implanted PLLA stents. The re-endothelialization ability and thrombogenicity were examined through in vitro endothelial cell and platelet adhesion tests. An in vivo swine model was used to evaluate the effects of Ta ion implantation on subacute restenosis and thrombosis. Angiographic and histologic evaluations were conducted at one, two and three months post-treatment. Results : The Ta-implanted PLLA stent was successfully fabricated, exhibiting a smooth surface morphology and modified layer integration. After Ta ion implantation, the surface properties were more favorable for rapid endothelialization and for less platelet attachment compared to the bare PLLA stent. In an in vivo animal test, follow-up angiography showed no evidence of in-stent stenosis in either group. In a microscopic histologic examination, luminal thrombus formation was significantly suppressed in the Ta-implanted PLLA stent group according to the 2-month follow-up assessment (21.2% vs. 63.9%, p=0.005). Cells positive for CD 68, a marker for the monocyte lineage, were less frequently identified around the Ta-implanted PLLA stent in the 1-month follow-up assessments. Conclusion : The use of a Ta-implanted PLLA stent appears to promote re-endothelialization and anti-thrombogenicity.

• 전기전자학회논문지
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• 제26권3호
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• pp.333-340
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• 2022

고전압용 정전기 보호소자인 DDDNMOS(double diffused drain N-type MOSFET) 소자의 더블 스냅백 방지를 위한 최적의 이온주입 조건을 결정하기 위해 공정 및 소자 시뮬레이션이 수행되었다. HP-Well, N^- 드리프트 및 N⁺ 드레인 이온주입량의 변화가 더블 스냅백 및 애발란치 브레이크다운 전압에 미치는 영향을 고찰함으로써 더블 스냅백을 방지하여 정전기 보호 성능 개선할 수 있었다. HP-Well 영역보다는 N^- 드리프트 영역의 이온주입 농도를 최적으로 설계할 경우, 1차 on 상태에서 2차 on 상태로 전이하는 것을 막아주므로 비교적 양호한 정전기 보호 성능을 얻을 수 있었다. 또한 드리프트 이온주입 농도는 누설전류 및 애발란치 브레이크다운 전압에도 영향을 미치므로 동작전압이 30V보다 큰 공정기술에서는 DPS와 같은 새로운 구조를 적용하거나, 대안으로 여러 공정 변수들을 종합(colligation)하여 적용할 경우 향상된 정전기 보호 성능을 실현할 수 있을 것이다.

• 한국산업보건학회지
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• 제34권2호
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• pp.125-133
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• 2024

Objectives: The aim of this study is to develop a comprehensive Occupational Safety and Health (OSH) guide for maintenance tasks in semiconductor processing, specifically focusing on etching, deposition, and ion implantation processes. Methods: The development of the OSH guide involved a literature review, consultations with industry experts, and field investigations. It concentrates on Maintenance Work (MW) operations in these specialized areas. Results: The result is a detailed OSH guide tailored to MW in etching, deposition, and ion implantation facilities within semiconductor processing. This guide is structured to assist maintenance workers through pre-, during and post-MW phases, ensuring easy comprehension and adherence to safety protocols. It highlights the necessity of safety and health measures throughout the MW process to protect personnel. The guide is enriched with real-life scenarios and visual aids, including cartoons and photographs, to aid in the understanding and implementation of safety and health principles. Conclusions: This OSH guide is designed to enhance the protection of workers engaged in maintenance activities in the electronics sector, particularly in semiconductor manufacturing. It aims to improve compliance with safety and health standards in these high-risk environments.

• JSTS:Journal of Semiconductor Technology and Science
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• 제8권3호
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• pp.251-263
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• 2008

In this paper, we report an analytical modeling and 2-D Synopsys Sentaurus TCAD simulation of ion implanted silicon carbide MESFETs. The model has been developed to obtain the threshold voltage, drain-source current, intrinsic parameters such as, gate capacitance, drain-source resistance and transconductance considering different fabrication parameters such as ion dose, ion energy, ion range and annealing effect parameters. The model is useful in determining the ion implantation fabrication parameters from the optimization of the active implanted channel thickness for different ion doses resulting in the desired pinch off voltage needed for high drain current and high breakdown voltage. The drain current of approximately 10 A obtained from the analytical model agrees well with that of the Synopsys Sentaurus TCAD simulation and the breakdown voltage approximately 85 V obtained from the TCAD simulation agrees well with published experimental results. The gate-to-source capacitance and gate-to-drain capacitance, drain-source resistance and trans-conductance were studied to understand the device frequency response. Cut off and maximum frequencies of approximately 10 GHz and 29 GHz respectively were obtained from Sentaurus TCAD and verified by the Smith's chart.

• 한국산학기술학회논문지
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• 제4권1호
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• pp.13-16
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• 2003

열산화막으로 성장시킨 TiO₂/Ti에 70kev의 에너지로 N/sup +/ion 주입을 하고 이때 도우즈 범위를 0, 2, 5, 10×10/sup 17//cm²로 실시하였다. 한편, 이온주입에 따른 표면손상의 회복을 위해 각각 600℃∼2 hr동안 Ar분위기에서 실시하였다. N/sup +/ 도우즈 앙과 열처리에 따라 TiO₂ 색변화, 표면조도, 경도변화를 확인하여 의장용 재료로서의 Ti의 새로운 발색 가능성을 확인하였다. 기존 티타늄 산화층에 N/sup +/ 이온을 주입한 결과 도우즈 증가에 따라 갈색위주의 색변화가 가능하였고, 광택을 나타내는 표면조도는 열처리에 의해서 개선이 가능하였다. 한편 이온주입에 따른 경도는 열처리에 의해 10% 정도 향상이 가능하였다.

• Journal of Korean Vacuum Science & Technology
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• 제6권2호
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• pp.62-66
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• 2002

Hydraulic pumps are used to control the landing wheels of aircrafts, and their proper operation is vital to plane safety It is well hewn that adhesive wear failure is a major cause of pump failure. A dual nitrogen plasma immersion ion implantation process calling for the implantation of nitrogen at two different energies and doses has been developed to enhance the surface properties of the disks in the pumps. The procedures meet the strict temperature requirement of <200$^{\circ}C$, and after the treatment, the working lifetime of the pumps increases by more than a factor of two. This experimental protocol has been adopted by the hydraulic pump factory as a standard manufacturing procedure.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2000년도 추계종합학술대회 논문집(2)
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• pp.325-328
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• 2000

The control of the data retention time is a main issue for realizing future high density dynamic random access memory. In this paper, we propose the new implantation scheme by gate-related ion beam shadowing effect and buffer-enhanced $\Delta$ Rp increase using buffered N- implantation with tilt and 4X-rotation that is designed on the basis of the local-field-enhancement model of the tail component. We report an excellent tail improvement of the retention time distribution attributed to the reduction of electric field across the cell junction due to the redistribution of N- concentration which is intentionally caused by Ion Beam Shadowing and Buffering Effect using tilt implantation with 4X-rotation.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1996년도 하계학술대회 논문집 C
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• pp.1553-1555
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• 1996

This paper deals with latchup effect in CMOS retrograde well, focusing on their dependence on I/I energy conditions, so we derived some latchup characteristics from simulation for different I/I conditions on implantation energies which were used in process simulation. From these results, we could understand the dependency of CMOS retrograde well latchup on I/I energy condition.

• 한국전기전자재료학회논문지
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• 제11권9호
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• pp.705-710
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• 1998

Intrinsic gettering is usually to improve wafer quality, which is an important factor for reliable ULSI devices. In order to generate oxygen precipitation in lightly and heavily boron doped silicon wafers with or without high $^75 As^+$ ion implantation, the 2-step annealing method was adopted. After annealing, the were cleaved and etched with th Wright etchant. The morphology of cross section on samples was inspected by FESEM(field emission scanning electron microscopy). The morphology of unimplanted samples was rater rough than that of the implanted. Oxygen precipitation density observed by an optical microscope in lightly boron doped samples was about 3$\times10^6/cm^3$. However, in heavily boron doped samples, the density of oxygen precipitation was largest at $600^{\circ}C$ in 1st annealing, and decreased abruptly until $800^{\circ}C$, But it increased slightly at $1000^{\circ}C$ and was independent with the implantation.