• Title/Summary/Keyword: ion source

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Morphology Evolution of GaAs(100) Surfaces during Inductively Coupled Plasma Etching at Biased Potential (유도결합 플라즈마 식각시 bias에 의한 GaAs(100) 표면의 형태 변화)

  • Lee, Sang-Ho
    • Journal of the Korean Vacuum Society
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    • v.16 no.4
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    • pp.250-261
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    • 2007

  • We present the morphological evolution at different source powers in the ion-enhanced etching of GaAs(100) in $BCl_3-Cl_2$ plasma. With little ion bombardment at floating potential, the surface develops <110> ridges and {111} facets, as it does in purely chemical etching. Higher source power (900 W) produces well developed crystallographic surfaces while lower source power (100 W) produces poorly developed crystallographic surfaces. This is attributed to the availability of excited reactive species (chlorine atoms) depending on source powers. With more concentration of the reactive species at higher source powers, the surface of GaAs(100) would be a surface that is expected from thermodynamics while the surface morphology would be determined by sputtering in the lack of reactive species. Statistical analysis of the surfaces, based on scaling theory, revealed two spatial exponents: one (smaller than one) is formed by atomic scale mechanisms, the other (larger than one) is formed by larger scale mechanisms which is believed to develop facets. When samples are biased, the surfaces experienced bombardment resulting in suppression of ridge formation at high source power and islands formation at low source power.

  • https://doi.org/10.5757/JKVS.2007.16.4.250 인용 PDF KSCI