• Journal of Pharmaceutical Investigation
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• v.38 no.1
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• pp.9-14
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• 2008

Cation exchange resin complex of amlodipine free base has been investigated to improve the stability and dissolution profile. The complex was prepared by reacting amlodipine solution with activated cation exchange resin, and amlodipine content in the complex was 31.6% calculated by HPLC determination. Its product was not physical mixture but the complex formed by ionic bond, which was identified by microscope system, differential scanning calorimetry and X-ray diffractometry. Each tablet containing amlodipine free base(I) and its complex(II) was prepared for the accelerated stability test ($40^{\circ}C$, 75%RH) and dissolution test in the pH 1.2 buffer solution and purified water media. Dissolution patterns of formulation II in both media were similar to those of $Norvasc^{(R)}$ tablet, but the pattern of formulation I in purified water was different. After 6 months storage under stability test, amlodipine content of formulation I, II and $Norvasc^{(R)}$ tablet were $99.3{\pm}1.2%,\;98.9{\pm}1.4%\;and\;83.9{\pm}3.4%$, respectively. While amlodipine free base was unstable at the condition, its complex was not only significantly stable, but also similar in the dissolution pattern. These results suggest the usefulness of complex as a stable carrier for amlodipine free base.

• Progress in Superconductivity
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• v.8 no.2
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• pp.175-180
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• 2007

High temperature superconductor $YBa_2Cu_3O_{7-x}$ (YBCO) films have been grown by in-situ electron beam evaporation on artificial metal tapes such as ion-beam assisted deposition (IBAD) and rolling assisted biaxially textured substrates (RABiTS). Deposition rate of the YBCO films is $10{\sim}100{\AA}/sec$. X-ray diffraction shows that the films are grown epitaxially but have inter-diffusion phases, like as $BaZrO_3\;or\;BaCeO_3$, at their interfaces between YBCO and yttrium-stabilized zirconia (YSZ) or $CeO_2$, respectively. Secondary ion mass spectroscopy depth profile of the films confirms diffused region between YBCO and the buffer layers, indicating that the growth temperature ($850{\sim}900^{\circ}C$) is high enough to cause diffusion of Zr and Ba. The films on both the substrates show four-fold symmetry of in-plane alignment but their width in the -scan is around $12{\sim}15^{\circ}$. Transmission electron microscopy shows an interesting interface layer of epitaxial CuO between YBCO and YSZ, of which growth origin may be related to liquid flukes of Ba-Cu-O. Resistivity vs temperature curves of the films on both substrates were measured. Resistivity at room temperature is between 300 and 500 cm, the extrapolated value of resistivity at 0 K is nearly zero, and superconducting transition temperature is $85{\sim}90K$. However, critical current density of the films is very low, ${\sim}10^3A/cm^2$. Cracking of the grains and high-growth-temperature induced reaction between YBCO and buffer layers are possible reasons for this low critical current density.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.167-167
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• 2011

Magnetic random access memory (MRAM) is one of the prospective semiconductor memories for next generation. It has the excellent features including nonvolatility, fast access time, unlimited read/write endurance, low operating voltage, and high storage density. MRAM consists of magnetic tunnel junction (MTJ) stack and complementary metal-oxide semiconductor (CMOS). The MTJ stack is composed of various magnetic materials, metals, and a tunneling barrier layer. For the successful realization of high density MRAM, the etching process of magnetic materials should be developed. Among various magnetic materials, FePt has been used for pinned layer of MTJ stack. The previous etch study of FePt magnetic thin films was carried out using $CH_4/O_2/NH_3$. It reported only the etch characteristics with respect to the variation of RF bias powers. In this study, the etch characteristics of FePt thin films have been investigated using an inductively coupled plasma reactive ion etcher in various etch chemistries containing $CH_4$/Ar and $CH_4/O_2/Ar$ gas mixes. TiN thin film was employed as a hard mask. FePt thin films are etched by varying the gas concentration. The etch characteristics have been investigated in terms of etch rate, etch selectivity and etch profile. Furthermore, x-ray photoelectron spectroscopy is applied to elucidate the etch mechanism of FePt thin films in $CH_4$/Ar and $CH_4/O_2/Ar$ chemistries.

• Analytical Science and Technology
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• v.12 no.4
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• pp.265-272
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• 1999

A simultaneous profile analysis of 19 environmental estrogens, which act like estrogen and may effect the endocrine system by binding to hormone receptors or influencing cell signaling pathways, was attempted. The present method was based on the selected ion monitoring (SIM) mode of gas chromatography/mass spectrometry (GC/MS). It involves solid-liquid extraction, enzyme hydrolysis, liquid-liquid extraction and quantitative conversion into trimethylsilyl (TMS)-ether derivatives. Analytical recovery range was 47.6 ~ 99.5% and the RSD values of within-a-day and day-to-day test were 0.66 ~ 9.33%, 1.66 ~ 16.14%, respectively. The Korean reference values for the evaluation of environmental estrogen effects were established by this method.

• Applied Chemistry for Engineering
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• v.17 no.3
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• pp.327-330
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• 2006

We investigated the usefulness of $NbO_{x}$ nanopillars as an etching mask of dry etching for the formation of Si nanodot arrays. The $NbO_{x}$ nanopillar arrays were prepared by the anodic aluminum oxidation process of Al and Nb thin films. The etch rate and etch profile of $NbO_{x}$ nanopillar arrays were examined by varying the experimental conditions such as the concentration of etch gas, coil rf power, and dc bias voltage in the reactive ion etch system using the inductively coupled plasma. As the concentration of $Cl_{2}$ gas increased, the etch rate of $NbO_{x}$nanopillars decreased. With increasing coil rf power and dc bias voltage, the etch rates were found to increase. The etch characteristics and etch mechanism of $NbO_{x}$ nanopillars were investigated by varying the etch time under the selected etch conditions.

• Proceedings of the Ginseng society Conference
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• 1984.09a
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• pp.45-48
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• 1984

Ion-pair reverse phase HPLC techniques were used to compare the contents of IAA and IAAsp in the embryogenic and non-embryogenic calli derived from ginseng (Panax ginseng C.A. Meyer) root tissues. The contents of IAA and IAAsp of the embryogenic callus were much higher (7 to 18 X respectively) than those of non-embryogenic callus. There is a distinct fluorescent peak of an unknown component in the HPLC profile of the extract for indolic compounds from non-embryo-genic callus. This distinct difference may be employed as a promising parameter to screen the culture pieces for obtaining the calli with high potential for embryoid formation.

• Current Photovoltaic Research
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• v.2 no.3
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• pp.120-123
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• 2014

Thermal doping method using furnace is generally used for solar-cell wafer doping. It takes a lot of time and high cost and use toxic gas. Generally selective emitter doping using laser, but laser is very high equipment and induce the wafer's structure damage. In this study, we apply atmospheric pressure plasma for solar-cell wafer doping. We fabricated that the atmospheric pressure plasma jet injected Ar gas is inputted a low frequency (1 kHz ~ 100 kHz). We used shallow doping wafers existing PSG (Phosphorus Silicate Glass) on the shallow doping CZ P-type wafer (120 ohm/square). SIMS (Secondary Ion Mass Spectroscopy) are used for measuring wafer doping depth and concentration of phosphorus. We check that wafer's surface is not changed after plasma doping and atmospheric pressure doping width is broaden by increase of plasma treatment time and current.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.9
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• pp.695-699
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• 2001

Cerium dioxide (CeO$_2$) was used as the intermediate layer between the ferroelectric thin film and Si substrate in a metal-ferroelectric-semiconductor field effect transistor (MFSFET), to improve the interface property by preventing the interdiffusion of the ferroelectric material and the Si substrate. In this study, CeO$_2$ thin films were etched with a CF$_4$/Ar gas combination in inductively coupled plasma (ICP). The maximum etch rate of CeO$_2$ thin films was 270$\AA$/min under CF$_4$/(CF$_4$+Ar) of 0.2, 600 W/-200V, 15 mTorr, and $25^{\circ}C$. The selectivities of CeO$_2$ to PR and SBT were 0.21, 0.25, respectively. The surface reaction in the etching of CeO$_2$ thin films was investigated with x-ray photoelectron spectroscopy (XPS). There is a chemical reaction between Ce and F. Compounds such as Ce-F$_{x}$ remains on the surface of CeO$_2$ thin films. Those products can be removed by Ar ion bombardment. The results of secondary ion mass spectrometry (SIMS) were consistent with those of XPS. Scanning electron microscopy (SEM) was used to examine etched profiles of CeO$_2$ thin films. The etch profile of over-etched CeO$_2$ films with the 0.5${\mu}{\textrm}{m}$ line was approximately 65$^{\circ}$.>.

• Korean Journal of Optics and Photonics
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• v.11 no.5
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• pp.335-339
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• 2000

A $1.31/1.55\mu\textrm{m}$ coarse WDM opncal dIrectional coupler that conslsls of two idenlical straight channel waveguides in BK7 glass has been fabricated. The separatIOn between two channel waveguides is $8\mu\textrm{m}$ and the wavegu.ide width is $4\mu\textrm{m}$ . Especlally, we assumed that the index profile is Gaussian function and complementary error function in the width direction and depth direction, respectrvely. This directional coupler operating at $1.31/1.55\mu\textrm{m}$ with crosstalk of 18dB is demonstrated and has the 16 mm long length with 12.6 mm coupling region.region.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.5
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• pp.396-401
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• 1999

In this study, $Ar^+$ ion laser etching process of single/poly-crystalline Si with $CCl_2F_2$ gas is investigated for MEMS applications. In general, laser direct etching process is useful in microelectronic process, fabrication of micro sensors and actuators, rapid prototyping, and complementary processing because of the advantages of 3D micromachining, local etching/deposition process, and maskless process with high resolution. In this study, a pyrolytic method, in which $CCl_2F_2$ gasetches molten Si by the focused laser, was used. In order to analyze the temperature profile of Si by the focused laser, the 3D heat conduction equation was analytically solved. In order to investigate the process parameters dependence of etching characteristics, laser power, $CCl_2F_2$ gas pressure, and scanning speed were varied and the experimental results were observed by SEM. The aspect ratio was measured in multiple scanning and the simple 3D structure was fabricated. In addition, the etching characteristics of $6\mum$ thick poly-crystalline Si on the insulator was investigated to obtain flat bottom and vertical side wall for MEMS applications.