• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.163-163
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• 2000

In this research, we used the ion irradiation technique which has an advantae in improving intentionally the properties of surface and interface in a non-equilibrium, instead of the conventional annealing method which has been known to improve the material properties in the equilibrium stat. Cu/Co multilayered films were prepared on SiN4/SiO2/Si substrates by the electron-beam evaporation for the Co layers and the thermal evaporation for the Cu layers in a high vacuum. The ion irradiation with a 80keV Ar+ was carried out at various ion doses in a high vacuum. Hysteresis loops of the films were investigated by magneto-optical polar Kerr spectroscopy at various experimental conditions. The change of atomic structure of the films before and after the ion irradiation was studied by glancing angle x-ray diffraction, and the intermixing between Co and Cu sublayers was confirmed by Rutherford backscattering spectroscopy. The surface roughness and magneto-resistance were measured by atomic force microscopy and with a four-point probe system, respectively. During the magneto-resistance measurement, we changed temperature and the direction of magnetization. From the results of experiments, we found that the change at the interfaces of the Cu/Co multilayered film induced by ion irradiation cause the change of magnetic properties. According to the change in hysteresis loop, the surface inplane component of magnetic easy axis was isotropic before the ion irradiation, but became anisotropic upon irradiation. It was confirmed that this change influences the axial behavior of magneto-resistance. Especially, the magneto-resistance varied in accordance with an external magnetic field and the direction of current, which means that magneto-resistance also shows the uniaxial behavior.

• Journal of the Korean Society of Food Science and Nutrition
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• v.3 no.1
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• pp.53-68
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• 1974

The thiohydantoin derivative derived from amino acid was used for the stepwise sequence analysis of peptide or protein from the carboxyl termini. Recently, SUZUKI reported the mass spectrometric identification about a part of these compounds. In this paper, was described the mass spectrometric identification of thiohydantoins derived from 20 amino acids. Mass spectra were obtained with a mass spectrometer, JEOL model JMS-06H and samples were introduced with a direct inlet probe. The molecular ion peaks and fragment ion peaks were identified easily, because these peaks appeared differently every amino acids and specially, it was easy discrimination between leucine and isoleucine. It is suggested that mass spectrometry was one of the useful methods to identify thiohydantoins derived from amino acids.

• Mass Spectrometry Letters
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• v.3 no.2
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• pp.29-38
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• 2012

A new approach of volatile compounds analysis is proposed using a linear ion trap Orbitrap mass spectrometer coupled with gas chromatography through an atmospheric pressure photoionization interface. In the proposed GC-HRMS/MS approach, direct chemical composition analysis is made for the precursor ions in high resolution MS spectra and the structural identifications were made through the database search of high quality MS/MS spectra. Successful analysis of a complex perfume sample was demonstrated and compared with GC-EI-Q and GC-EI-TOF. The current approach is complementary to conventional GC-EI-MS analysis and can identify low abundance co-eluting compounds. Toluene co-sprayed as a dopant through API probe significantly enhanced ionization of certain compounds and reduced oxidation during the ionization.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.58-61
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• 2002

SBT thin films were etched at different content of Cl$_2$in Cl$_2$/Ar plasma. We obtained the maximum etch rate of 883 ${\AA}$/min at Cl$_2$(20%)/Ar(80%). As Cl$_2$ gas increased in Cl$_2$/Ar plasma, the etch rate decreased. The maximum etch rate may be explained by variation of volume density for Cl atoms and by the concurrence of two etching mechanisms such as physical sputtering and chemical reaction with formation of low-volatile products, which can be desorbed only by ion bombardment. The variation of volume density for Cl, F and Ar atoms and ion current density were measured by the optical emission spectroscopy and Langmuir probe. To evaluate the physical damage due to plasma, X-ray diffraction and atomic force microscopy analysis carried out. After etching process, P-E hysteresis loops were measured by ferroelectric workstation.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.2
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• pp.95-100
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• 1998

A helical inductively coupled plasma asher, which produces low energy and high density plasma, has been built and investigated for photoresist stripping process. Oxygen ion density in the order of $10^{11}/cm^3$ is measured by Langmuir probe, and higher oxygen radical density is observed by Optical Emission Spectrometer. As RF source power is increased, the plasma density and thus photoresist stripping rate are increased. Independent RF bias power to the wafer stage provides a dc bias to the wafer and an ability to add the ion assisted reaction. At 1 KW of the source power, the coupling mechanism of the RF power to the plasma is changed from the inductive mode to the capacitive one at about 1 Torr. This change causes the plasma density and ashing rate decreases abruptly. The critical pressure of the mode change becomes larger with larger RF power.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2006.05a
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• pp.463-464
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• 2006

This paper present experimental results by non-contact mode Atomic Force Microscopy using high aspect ratio tips (HAR-T). We fabricated the carbon nanotube tip based on dielectrophoresis and the carbon nano probe by focused ion beam after dielectrophoretic assembling. In this paper, we measure AAO sample and trench structure to estimate HAR-T's performance and compared with conventional Si tip. We confirmed that results of HAR-T's performance in non contact mode was very superior than conventional tip.

• Journal of the Korean Society for Nondestructive Testing
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• v.32 no.3
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• pp.263-268
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• 2012

It is important to know the mechanism of cell membrane fluctuation because it can be readout for the nanomechanical interaction between cytoskeleton and plasma membrane. Traditional techniques, however, have drawbacks such as probe contact with the cell surface, complicate analysis, and limit spatial and temporal resolution. In this study, we developed a new system for non-contact measurement of nano-scale localized-cell surface dynamics using modified-scanning ion-conductance microscopy. With 2 nm resolution, we determined that endothelial cells have local membrane fluctuations of ~20 nm, actin depolymerization causes increase in fluctuation amplitude, and ATP depletion abolishes all membrane fluctuations.

• Journal of the Korean institute of surface engineering
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• v.32 no.2
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• pp.83-92
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• 1999

GaN etching was performed using planar inductively coupled $Cl_2$-based plasmas and the effects of main process parameters on the characteristics of the plasmas and their relations to GaN etch rates were studied. Also, the GaN etch mechanism was investigated using a Langmuir probe and optical emission spectroscopy (OES) during the etching, and X-ray photoelectron spectroscopy (XPS) of the etched surfaces. The GaN etch rates increased with the increase of chlorine radical density and ion energy, and a vertical etch profile haying the etch rate close to 4000 $\AA$/min could be obtained. The addition of 10% Ar to $Cl_2$ gas increased the GaN etch rate and the addition of Ar (more than 20%) and HBr generally reduced the GaN etch rate. The GaN etch rate appeared to be more affected by the chemical reaction between Cl radicals and GaN compared to the physical sputtering itself under the sufficient ion bombardments to break GaN bonds.

• Proceedings of the KIEE Conference
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• 1988.07a
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• pp.319-323
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• 1988

For finding the effects of As on $TiSi_2$ formation, sputter deposited Ti film on Si substrates implanted with various doses of As have been rapid thermal annealed in Ar atmosphere at temperatures of 600-900$^{\circ}C$ for 20 sec. The sheet resistance of Ti-Silicides was examined with 4-point probe, the thickness with ${\alpha}$-step, and the As dopant behavior in Si substrates with ASR. The thickness of Ti-Silicides decreased with increasing As doping, but Ti-Silicides sheet resistance increased with increasing it. However, the critical concentration effect reported by Park et al. was not observed. We observed that the thickness of native oxide increase with increasing As doping. Thus, we concluded that native oxide act as a "barrier" for the Si diffusion.

• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.1
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• pp.81-90
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• 1990

In this study, ion beam deposited tungsten thin film for gate material of GaAs SAGFET(Self Aligned Gate FET) was annealed from 800\ulcorner to 900\ulcorner using RTA and detailed investigations of structural and electrical characteristics of this film were carried out using four-point probe, XRD, SEM, AES and current-voltage measurement. Investigated results showed phase of as deposited tungsten film was fine grain \ulcornerphase and phase tdransformation of this film into \ulcornerphase occured at annealing condition of 900\ulcorner, 6sec. But regardless of phase transformation, electrical characteristics of tungsten film were very stable to 900\ulcorner and in case of 900\ulcorner, 4sec annealing condition Schottky barrier height obtained from 10 diodes measurements was 0.66 + 0.003 eV.