• 한국세라믹학회지
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• 제45권9호
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• pp.556-560
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• 2008

The effects of Nb and Co ion substitution on the dielectric and magnetic properties of the multiferroic $BiFeO_3$ thin films have been investigated. Heteroepitaxial $BiFeO_3$ thin films were deposited by Pulsed Laser Deposition method. Nb substitution decreased the leakage current by 6 orders of magnitude and Co substituted $BiFeO_3$ thin films showed an enhanced magnetization, 2 times larger than that of un-substituted $BiFeO_3$. Through the co-substitution of Co and Nb, $BiFeO_3$ thin films with a low leakage current and an enhanced magnetization could be obtained.

• E2M - 전기 전자와 첨단 소재
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• 제8권6호
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• pp.708-714
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• 1995

We have discussed the buried-channel(BC) behavior through the subthreshold characteristics of submicron PMOSFET device fabricated with twin well CMOS process. In this paper, we have guessed the initial conditions of ion implantation using process simulation, obtained the subthreshold characteristics as a function of process parameter variation such as threshold adjusting ion implant dose($D_c$), channel length(L), gate oxide thickness($T_ox$) and junction depth of source/drain($X_j$) using device simulation. The buried channel behavior with these process prarameter variation were showed apparent difference. Also, the fabricated pMOSFET device having different channel length represented good S.S value and low leakage current with increasing drain voltage.

• Membrane and Water Treatment
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• 제1권1호
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• pp.13-37
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• 2010

The performance of an electrodialyzer for concentrating seawater is predicted by means of a computer simulation, which includes the following five steps; Step 1 mass transport; Step 2 current density distribution; Step 3 cell voltage; Step 4 NaCl concentration in a concentrated solution and energy consumption; Step 5 limiting current density. The program is developed on the basis of the following assumption; (1) Solution leakage and electric current leakage in an electrodialyzer are negligible. (2) Direct current electric resistance of a membrane includes the electric resistance of a boundary layer formed on the desalting surface of the membrane due to concentration polarization. (3) Frequency distribution of solution velocity ratio in desalting cells is equated by the normal distribution. (4) Current density i at x distant from the inlets of desalting cells is approximated by the quadratic equation. (5) Voltage difference between the electrodes at the entrance of desalting cells is equal to the value at the exits. (6) Limiting current density of an electrodialyzer is defined as average current density applied to an electrodialyzer when current density reaches the limit of an ion exchange membrane at the outlet of a desalting cell in which linear velocity and electrolyte concentration are the least. (7) Concentrated solutions are extracted from concentrating cells to the outside of the process. The validity of the computer simulation model is demonstrated by comparing the computed results with the performance of electrodialyzers operating in salt-manufacturing plants. The model makes it possible to discuss optimum specifications and operating conditions of a practical-scale electrodialyzer.

• Bulletin of the Korean Chemical Society
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• 제31권8호
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• pp.2201-2206
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• 2010

To improve the separation property and stability of metal chelate Cu(II) column, three new kinds of multidentate aminocarboxy silica columns with cation-exchange properties were synthesized using glutamic acid (Glu), glutamic acidbromoacetic acid (Glu-BAA), glutamic acid-bromosuccinic acid (Glu-BSUA) as ligands and silica gel as matrix. The standard proteins were separated with prepared chromatographic columns. The stationary phases exhibited the metal chelate property after fixing copper ion (II) on the synthesized multidentate ligand silica columns. The binding capacity of immobilized metal ion was related with the dentate number of multidentate ligands. Chromatographic behavior of proteins and the leakage of immobilized metal ion on multidentate chelate Cu(II) columns were affected by the dentate number of multidentate ligands and competitive elution system directly. The results showed that quinquedentate Glu-BSUA-Cu(II) column exhibited better chromatographic property and stability as compared with tridentate Glu-Cu(II) column, tetradentate Glu-BAA-Cu(II) column and commonly used IDA-Cu(II) column.

• 한국방사성폐기물학회:학술대회논문집
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• 한국방사성폐기물학회 2018년도 추계학술논문요약집
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• pp.353-354
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• 2018

• 대한전자공학회논문지SD
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• 제39권4호
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• pp.35-40
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• 2002

일함수가 낮은 바나듐과 몰리브덴을 장벽금속으로 사용하여 초절전형 SBR을 제조하였다. 일함수가 낮은 장벽금속을 사용함으로서 나타나는 역방향 누설전류를 감소시키기 위해 n-Si층에 아르곤 이온을 1×10/sup 14/ ion/㎠, 40 keV로 주입하였다. 제조된 소자의 전기적 특성은 60 A/㎠의 동일한 전류밀도에서 Mo-SBR의 V/sub F/는 0.39 V이고 V-SBR은 0.25 V로서 매우 낮은 V/sub F/를 나타내었다. 이에 따라 아르곤 이온주입에 의해 제조된 Y-SBR의 역방향 누설전류는 일반적인 V-SBR과 비교하여 20㎂ 이상 감소됨을 확인할 수 있었다. 또한, 아르곤 이온주입으로 인한 소자의 특성저하는 나타나지 않았다.

• 한국진공학회지
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• 제17권1호
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• pp.1-8
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• 2008

포항가속기연구소 저장링에 설치된 방사광 차단용 진공부품에서 냉각수가 누설되었을 때의 진공도 분포, 압력 변화, 잔류 기체의 변화 등을 측정하여 그 특성을 분석하였다. 냉각수 누설 시에 압력 상승은 국부적으로 나타났으며 잔류 기체의 변화 양상은 누설 위치로부터 잔류기체 분석기까지 거리와 이온펌프 및 전자빔의 On/Off에 따라서 크게 달랐으며 특정 기체의 선택적 상승도 나타났다. 냉각수 누설의 발견은 전압변화 측정으로 가능하였으며 잔류기체 분석기로는 물분자를 직접 측정하기보다는 $CH_4$, CO, NO 등 특성 기체의 증가를 분석함으로 누설 여부를 판단할 수 있었다.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 1999년도 하계종합학술대회 논문집
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• pp.946-949
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• 1999

In this research we have developed a reliable, effective and feasible HEI(High-Energy Ion Implantation) process 3D-simulation tool, and then by using it we can predict and analyze the effect of HEI process on characteristics of the standard CMOS device. high-energy ion implantation above 200 keV is inevitable process to form retrograde well and buried layer to prevent leakage current, to conduct field implant for field isolation, and to perform after-gate implantation. The feasible analysis tool is a product of the HEI process modeling verified by comparison of the SIMS experiments with the simulation results. Especially, in this paper, we present the predicting capability of HEI-induced impurity and damage profiles compared with the published SIMS data in order to acquire the reliability of our results ranging from few keV to several MeV for phosphorus and boron implantation.

• 대한전기학회논문지
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• 제40권6호
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• pp.619-625
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• 1991

Phenomena of streaming electrification of insulting oil(T.O) is studied where the oil is contacted with solid insulating materials when it is pumped through a circulating system in a large power transformer. The leakage current, the electrical potential at the neutral terminal point of the transformer and the surface electrical potential of the oil are investigated. And the leakage current from the neutral terminal point is measured as a function of a bias polarity applied to a transformer case to investigate the polarty of ion which is absorbed in the case at the interface between the case and oil. As a result, it is found that insulating materials, and it is suggested that the leakage current is the sum of the relaxation current by positive charge from insulating oil to the neutral terminal point and by electrification current from negative charge electrified by the contact with solid insulating materials.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1996년도 하계학술대회 논문집 C
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• pp.1582-1584
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• 1996

The polycrystalline silicon thin film transistors (poly-Si TFT) are the most promising candidate for active matrix liquid crystal displays (AMLCD) for their high mobilities and current driving capabilities. The leakage current of the poly-Si TFT is much higher than that of the amorphous-Si TFT, thus larger storage capacitance is required which reduces the aperture ratio fur the pixel. The offset gated poly-Si TFTs have been widely investigated in order to reduce the leakage current. The conventional method for fabricating an offset device may require additional mask and photolithography process step, which is inapplicable for self-aligned source/drain ion implantation and rather cost inefficient. Due to mis-alignment, offset devices show asymmetric transfer characteristics as the source and drain are switched. We have proposed and fabricated a new offset poly-Si TFT by applying photoresist reflow process. The new method does not require an additional mask step and self-aligned ion implantation is applied, thus precise offset length can be defined and source/drain symmetric transfer characteristics are achieved.