• Proceedings of the Korean Society of Precision Engineering Conference
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• 2004.10a
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• pp.254-259
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• 2004

The research on surface modification technology has been advanced to change the properties of engineering material. Ion implantation is a novel surface modification technology to enhance the mechanical, chemical and electronic properties of mechanical parts. In this research, nitrogen ions are implanted into aluminum for mold to improve endurance and life span. To analyze modification of surface properties, micro hardness, friction coefficient, wear resistance, contact angle, and surface roughness were measured. Hardness of ion implanted specimens was higher than untreated specimen and friction coefficient was also improved. In this experiment, it can be expected that nitrogen ion implantation can contribute to enhance the mechanical properties of material and ion implantation technology may also be applied to other materials.

• Korean Journal of Materials Research
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• v.25 no.6
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• pp.293-299
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• 2015

In this study, nitrogen ions were implanted into STS 316L austenitic stainless steel by plasma immersion ion implantation (PIII) to improve the corrosion resistance. The implantation of nitrogen ions was performed with bias voltages of -5, -10, -15, and -20 kV. The implantation time was 240 min and the implantation temperature was kept at room temperature. With nitrogen implantation, the corrosion resistance of 316 L improved in comparison with that of the bare steel. The effects of nitrogen ion implantation on the electrochemical corrosion behavior of the specimen were investigated by the potentiodynamic polarization test, which was conducted in a 0.5 M $H_2SO_4$ solution at $70^{\circ}C$. The phase evolution and texture caused by the nitrogen ion implantation were analyzed by an X-ray diffractometer. It was demonstrated that the samples implanted at lower bias voltages, i.e., 5 kV and 10 kV, showed an expanded austenite phase, ${\gamma}_N$, and strong (111) texture morphology. Those samples exhibited a better corrosion resistance.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.12
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• pp.1091-1096
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• 2003

Ion implantation in polymeric materials can induce dramatic chemical modifications, such as bond breaking, cross linking, formation of new chemical products, which have strong influences on the macroscopic properties of the materials. In this study ion implantation was performed onto polymer, PC(polycarbonate), in order to investigate change of the optical transmittance property focusing ultraviolet ray range(200-400nm). PC was irradiated with N, Ar, Kr, Xe ions at the ion energy of 50keV and the dose range of 5 ${\times}$ 10$\^$15/, 1 ${\times}$ 10$\^$16/, 7${\times}$10$\^$16/ ions/$\textrm{cm}^2$. FT-IR, XPS, UV/Vis transmittance spectroscopy measurement technologies were employed to obtain chemical. structural properties and optical transmittance of irradiated polymer. The original PC(unimplanted) is quite transparent that it has more than 88% transmittance in the range UV-A(320∼400nm), but after ion implantation, surface colors were changed to the dark brown and the transmittance of UV ray decreased for all implantation condition, and the absorption edge was shift to visible range with increasing mass of implanted ion species and dose.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.7 no.4
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• pp.3-9
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• 2008

The ion implantation technology is generally used in order to improve surface mechanical properties, especially tribological properties, of engineering metals. In this study, experimental works were carried out to investigate the surface properties, such as hardness, wear quantity, wear rate and friction force, of a nitrogen ion implanted tool steel STD11 under dry condition. Specimens for the wear test were made to investigate the influences of the initial ion implantation temperature and the total ion radiation. Wear properties, such as the wear quantity and the wear rate, of the nitrogen ion implanted tool steel were considerably improved, especially under the low sliding speed and the low applied load.

• Proceedings of the IEEK Conference
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• 1999.06a
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• pp.946-949
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• 1999

In this research we have developed a reliable, effective and feasible HEI(High-Energy Ion Implantation) process 3D-simulation tool, and then by using it we can predict and analyze the effect of HEI process on characteristics of the standard CMOS device. high-energy ion implantation above 200 keV is inevitable process to form retrograde well and buried layer to prevent leakage current, to conduct field implant for field isolation, and to perform after-gate implantation. The feasible analysis tool is a product of the HEI process modeling verified by comparison of the SIMS experiments with the simulation results. Especially, in this paper, we present the predicting capability of HEI-induced impurity and damage profiles compared with the published SIMS data in order to acquire the reliability of our results ranging from few keV to several MeV for phosphorus and boron implantation.

• Journal of information and communication convergence engineering
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• v.1 no.2
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• pp.67-69
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• 2003

The experimental studies for the etch properties of the oxide grown on silicon substrate, which is in diluted hydrogen fluoride (HF) solution, are presented. Using different ion implantation dosages, dopants and energies, silicon substrate was implanted. The wet etching in diluted HF solution is used as a mean of wafer cleaning at various steps of VLSI processing. It is shown that the wet etch rate of oxide grown on various implanted silicon substrates is a strong function of ion implantation dopants, dosages and energies. This phenomenon has never been reported before. This paper shows that the difference of wet etch rate of oxide by ion implantation conditions is attributed to the kinds and volumes of dopants which was diffused out into $SiO_2$ from implanted silicon during thermal oxidation.

• Journal of the Korean Society for Precision Engineering
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• v.22 no.12 s.177
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• pp.124-130
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• 2005

The research on surface modification technology has been advanced to improve the properties of engineering materials. ion implantation is a novel surface modification technology to enhance the mechanical, chemical and electrical properties of substrate's surface using accelerated ions. In this research, nitrogen ions were implanted into aluminum substrates which would be used for mold of rubber materials. The composition of nitrogen ion implanted aluminum alloy and nitrogen ion distribution profile were analyzed by Auger Electron Spectroscopy (AES). To analyze the modified surface, properties such as hardness, friction coefficient, wear resistance, contact angle, and surface roughness were measured. Hardness of ion implanted specimens was higher than that of untreated specimens. Friction coefficient was reduced, and wear resistance was improved. From the experimental results, it can be expected that ion implantation of nitrogen enhances the surface properties of aluminum mold.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.34D no.5
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• pp.32-44
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• 1997

A three-dimensional (3D) full-dynamic damage model for ion implantation in crystalline silicon was proposed to calculate more accurately point defect distributions and ion-implanted concentration profiles during ion implantation process. The developed model was based on the physical monte carlo approach. This model was applied to simulate B and BF2 implantation. We compared our results for damage distributions with those of the analytical kinchin-pease approach. In our result, the point defect distributions obtained by our new model are less than those of kinchin-pease approach, and the vacancy distributions differ from the interstitial distributions. The vacancy concentrations are higher than the interstitial ones before 0.8 . Rp to the silicon surface, and after the 0.8 . Rp to the silicon bulk, the interstitial concentrations are revesrsely higher than the vacancy ones.The fully-dynamic damage model for the accumulative damage during ion implantation follows all of the trajectories of both ions and recoiled silicons and, concurrently, the cumulative damage effect on the ions and the recoiled silicons are considered dynamically by introducing the distributon probability of the point defect. In addition, the self-annealing effect of the vacancy-interstitial recombination during ion implantation at room temperature is considered, which resulted in the saturation level for the damage distribution.

• Journal of information and communication convergence engineering
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• v.9 no.6
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• pp.721-724
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• 2011

Polymer base organic PN junction with various ion types was studied. Low-energy ion implantation technique(~keV) is very useful in physical doping on PPP(Polyparaphenylene) polymer. By double implantation, effective organic PN junction was achieved. The best obtained electrical I-V property was rectification ratio which was about 10000. However, still have problems in low junction current density.

• 연구논문집
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• s.30
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• pp.137-145
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• 2000

Since the concept of osseointegration was introduced, titanium and titanium-based alloy materials have been increasingly used for bone-anchored metal in oralmaxillofacial and orthopedic reconstruction. Successful osseointegration has been attributed to biocompatibility and surface condition of metal implant among other factors. Although titanium and titanium alloys have an excellent over the metal ion release and biocompatibility, considerable controversy has developed over the metal ion and wear debris in vivo and vitro. In this study, nitrogen ion implantation technique was used to improve the corrosion resistance and wear property of titanium materials, ultimately to enhance the tissue reaction to titanium implants As ion implantation energy was increased, projected range of nitrogen ion the Ti substrate was gradually increased. Under condition of constant ion energy. atomic concentration of nitrogen was also increased with ion doses. The friction in Hank's solution was increased with ion doses. The friction coefficient of ion implanted specimens in HanK's solution was increased from 0.39, 0.47 to 0.52, 0.65 respectively under high energy and ion dose conditions. As increasing ion energies and ion dose, amount of wear was reduced.