• Title/Summary/Keyword: ion detection

검색결과 668건 처리시간 0.025초

토양 중의 Pesticide Priority Pollutants 동시 분석에 관한 연구 (Simultaneous Analysis of Pesticide Priority Pollutants in Soil)

  • 이승석;박영주;이석근
    • 분석과학
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    • 제8권3호
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    • pp.237-248
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    • 1995
  • 미국 환경청이 지정한 129종의 priority pollutants 중 16종의 유기살충제를 포함한 토양시료를 제조하여 표준분석방법인 기체크로마토그래프-전자포획법과 기체크로마토그래프/질량분석기-SIM (selected ion monitoring)법을 이용하여 동시분석의 효율성을 실험하였다. 토양시료의 추출 및 농축방법으로는 EPA의 SW-846 방법을 조금 수정한 초음파추출법(sonication extraction)과 Soxhlet 추출법(Soxhlet extraction)을 비교 연구하였다. 각 화합물의 회수율, 상대표준편차 및 method detection limit를 측정하여 그 결과들을 보고하였다.

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환경색센서에 관한 기술 전망 (Propectives of Environmental Colorimetric-Sensors)

  • 김영훈;이병환
    • Korean Chemical Engineering Research
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    • 제49권4호
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    • pp.393-399
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    • 2011
  • 지난 수십년 동안, 환경오염물질에 대한 광학적 전기화학적 검출 방법에 관한 다양한 연구가 진행되었다. 최근에는 저렴하고, 장치가 불필요한 육안 식별 가능한 환경색센서가 개발되고 있다. 시각적 정성분석은 대상물질에 대한 즉각적인 정보를 제공하여, 실시간 현장 분석이 가능하게 해준다. 또한 정량분석이 가능한 색센서에 대한 관심도 높아지고 있다. 환경색센서는 기상의 VOC, 액상의 중금속 분석용으로 주로 개발되고 있다. 이에 본 총설에서는 다양한 환경색센서의 활용분야를 살펴보고, 기존 색센서의 문제점을 파악한 다음 환경색센서 기술의 발전방향에 관하여 전망하였다.

양면 인쇄법을 이용한 중금속 검출용 3D 종이 기반 분석장치 제작 (Fabrication of 3D Paper-based Analytical Device Using Double-Sided Imprinting Method for Metal Ion Detection)

  • 최진솔;정헌호
    • 청정기술
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    • 제28권4호
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    • pp.323-330
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    • 2022
  • 미세유체 종이-기반 분석 장치는 최근 현장 진단 및 환경 물질 감지를 포함한 다양한 적용가능성으로 주목을 받고 있다. 본 연구는 적은 비용과 간단한 검출 방법으로 중금속을 빠르게 검출할 수 있는 3D-μPAD를 제작하기 위해 PDMS 양면 인쇄 방법을 제안하였다. 3D-μPAD 디자인은 레이저 커팅으로 아크릴 스탬프에 적용할 수 있으며, 제작된 스탬프에 PDMS 고분자를 스핀 코팅 후 양면접촉인쇄 방식 도입을 통해 3차원 형태의 소수성 장벽 형성에 필요한 조건을 확인하였다. 구체적으로 소수성 장벽 형성 조건인 고분자 농도, 스핀 코팅 속도 및 접촉 시간에 따라 PDMS 소수성 장벽 면적과 친수성 채널의 면적 변화를 분석함으로써 3D-μPAD 제작 공정 조건 최적화를 수행하였다. 최적화된 μPAD로 니켈, 구리, 수은 이온, pH를 다양한 농도에서 검출하였고 이를 ImageJ 프로그램으로 분석하여 grayscale 값으로 정량화 하였다. 이를 통해 3D-μPAD를 제작함으로써 특별한 분석 기기 없이 다양한 중금속 비색 검출을 수행함으로써 조기진단 바이오 센서로의 응용 가능성을 증명하였다. 이 3D-μPAD는 휴대가 간편한 다중 금속이온 검출 바이오센서로서, 신속한 현장 모니터링이 가능하므로 개발도상국 같은 자원이 제한된 지역에서 유용하게 사용 가능하다.

Ion-cut에 의한 SOI웨이퍼 제조에서의 양성자조사기구 (Proton implantation mechanism involved in the fabrication of SOI wafer by ion-cut process)

  • 우형주;최한우;김준곤;지영용
    • 한국진공학회지
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    • 제13권1호
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    • pp.1-8
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    • 2004
  • 양성자 주입과 웨이퍼접합기술을 접목한 ion-cut기술로서 SOI 웨이퍼를 제조하는 기술을 개발하고자 하였다. TRIM 전산모사결과 표준 SOI 웨이퍼 (200 nm SOI, 400 nm BOX) 제조를 위해서는 65 keV의 양성자주입이 요구됨을 알 수 있었다. 웨이퍼분리를 위한 최적 공정조건을 얻기 위해 조사선량과 열처리조건(온도 및 시간)에 따른 표면변화를 조사하였다. 실험결과 유효선량범위는 6∼$9\times10^{16}$ $H^{+}/\textrm{cm}^2$이며, 최적 아닐링조건은 $550^{\circ}C$에서 30분 정도로 나타났다. 주입된 수소의 깊이분포는 ERD(Elastic Recoil Detection)와 SIMS(Secondary Ion Mass Spectrometry)측정에 의해 실험적으로 확인되었다. 아울러 상해층의 미세구조 형성기구를 X-TEM측정을 통해 조사하였다.

Investigation of Ne and He Buffer Gases Cooled Ar+ Ion Clouds in a Paul Ion Trap

  • Kiai, S.M. Sadat;Elahi, M.;Adlparvar, S.;Nemati, N.;Shafaei, S.R.;Karimi, Leila
    • Mass Spectrometry Letters
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    • 제6권4호
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    • pp.112-115
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    • 2015
  • In this article, we examine the influences of Ne and He buffer gases under confined Ar+ ion cloud in a homemade Paul ion trap in various pressures and confinement times. The trap is of small size (r0 = 1 cm) operating in a radio frequency (rf) voltage only mode, and has limited accuracy of 13 V. The electron impact and ionization process take place inside the trap and a Faraday cup has been used for the detection. Although the experimental results show that the Ar+ ion FWHM with Ne buffer gas is wider than the He buffer gas at the same pressure (1×10-1 mbar) and confinement time is about 1000 μs, nevertheless, a faster cooling was found with He buffer gas with 500 μs. ultimetly, the obtanied results performed an average cloud tempertures reduced from 1777 K to 448.3 K for Ne (1000 μs) and from 1787.9 K to 469.4 K for He (500 μs)

이온선택성 미소전극을 이용한 질산화 생물막내의 질소 이온의 농도 모니터링 (Monitoring of Nitrogen Ion in Nitrifying Biofilm using an Ion Selective Microelectrode)

  • 선지윤;변임규;이태호;박태주
    • KSBB Journal
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    • 제25권1호
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    • pp.85-90
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    • 2010
  • An ion selective microelectrode (ISME) was fabricated to measure concentrations of ammonium (${NH_4}^+$-N) and nitrate (${NO_3}^-$-N) according to the depth of nitrifying biofilm. The limits of detectability and validity of results were investigated to evaluate the ISME. The electromotive force (EMF) was directly proportional to the ion concentration, and average detection limits of ${NH_4}^+$ and ${NO_3}^-$ ISME were $10^{-5.14}$ and $10^{-5.18}$ M, respectively. The concentrations of ${NH_4}^+ $-N and ${NO_3}^-$-N in various depths on the nitrifying biofilm were measured by the ISME. When a modified Ludzack-Ettinger (MLE) process was operated at an HRT of 6 h, concentration gradients of ${NH_4}^+$-N in the bulk solution and biofilm at depths of $100\;{\mu}m$ decreased by $70\;{\mu}M$, while ${NO_3}^-$-N increased by $101\;{\mu}M$ and remained constant thereafter. At an HRT of 4 h, concentration gradients of ${NH_4}^+$-N at depths of $500\;{\mu}m$ decreased by $160\;{\mu}M$ and ${NO_3}^-$-N increased by $162;{\mu}M$ and remained constant thereafter. As HRT decreased, the concentration gradients of ${NH_4}^+$-N and ${NO_3}^-$-N between bulk solution and biofilm was higher due to the increase of nitrogen load. Also, the concentration gradients of the ${NH_4}^+$-N and ${NO_3}^-$-N of biofilm in the second aerobic tank were lower than those of the first aerobic tank, suggesting differences of nitrogen load and concentrations of DO between the first and second aerobic tank.

Implant Anneal Process for Activating Ion Implanted Regions in SiC Epitaxial Layers

  • Saddow, S.E.;Kumer, V.;Isaacs-Smith, T.;Williams, J.;Hsieh, A.J.;Graves, M.;Wolan, J.T.
    • Transactions on Electrical and Electronic Materials
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    • 제1권4호
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    • pp.1-6
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    • 2000
  • The mechanical strength of silicon carbide dose nor permit the use of diffusion as a means to achieve selective doping as required by most electronic devices. While epitaxial layers may be doped during growth, ion implantation is needed to define such regions as drain and source wells, junction isolation regions, and so on. Ion activation without an annealing cap results in serious crystal damage as these activation processes must be carried out at temperatures on the order of 1600$^{\circ}C$. Ion implanted silicon carbide that is annealed in either a vacuum or argon environment usually results in a surface morphology that is highly irregular due to the out diffusion of Si atoms. We have developed and report a successful process of using silicon overpressure, provided by silane in a CAD reactor during the anneal, to prevent the destruction of the silicon carbide surface, This process has proved to be robust and has resulted in ion activation at a annealing temperature of 1600$^{\circ}C$ without degradation of the crystal surface as determined by AFM and RBS. In addition XPS was used to look at the surface and near surface chemical states for annealing temperatures of up to 1700$^{\circ}C$. The surface and near surface regions to approximately 6 nm in depth was observed to contain no free silicon or other impurities thus indicating that the process developed results in an atomically clean SiC surface and near surface region within the detection limits of the instrument(${\pm}$1 at %).

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"Turn-on" type colorimetric/fluorimetric probe for selective detection of Cu2+ at neutral pH condition

  • Lee, Hyun Jung;Saleem, Muhammad;Lee, Ki Hwan
    • Rapid Communication in Photoscience
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    • 제4권4호
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    • pp.88-90
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    • 2015
  • The design and development of fluorescent chemosensors have recently been intensively explored for sensitive and specific detection of environmentally and biologically relevant metal ions in aqueous solution and living cells. Herein, we report the photophysical results of rhodamine B based fluorogenic and chromogenic receptor for selective copper detection in the complete organic or mixed aqueous-organic media at neutral pH under ambient condition. The ligand exhibited the remarkable increment in the fluorescence emission and UV-visible absorption signal intensities at 587 and 547 nm, respectively, on induction of copper ion while the ligand solution remain completely silent on addition of varieties of other metal ions.

Microcavity Effect of Top-emission Organic Light-emitting Diodes Using Aluminum Cathode and Anode

  • Lee, Chang-Jun;Park, Young-Il;Kwon, Jang-Hyuk;Park, Jong-Wook
    • Bulletin of the Korean Chemical Society
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    • 제26권9호
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    • pp.1344-1346
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    • 2005
  • We report microcavity effect of top emission organic light-emitting diodes (OLEDs) by using Al cathode and anode, which are feasible for not only top emission EL and angle dependant effects but facile evaporation process without ion sputtering. The device in case of $Alq_3$ green emission showed largely shifted EL maximum wavelength as 650 nm maximum emission. It was also observed that detection angle causes different EL maximum wavelength and different CIE values in R, G, B color emission. As a result, the green device using $Alq_3$ emission showed 650 nm emission ($0^{\circ}$) to 576 nm emission ($90^{\circ}$) as detection angle changed. We believe that these phenomena can be also explained with microcavity effect which depends on the different length of light path caused by detection angle.

Analysis of Inorganic Anions in Various Drinking Waters by Capillary Electrophoresis

  • Choi, One-Kyun;Cho, Jae-Sun
    • 분석과학
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    • 제8권4호
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    • pp.835-841
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    • 1995
  • The quantitation of inorganic anions in various drinking waters were investigated using capillary electrophoresis(CE) and the results were compared with ion chromatography(IC). With CE, in contrast to IC, was demonstrated rapid analysis, good efficiency, a low detection limit and the low comsumption of a solvent and samples. CE analysis was used 5 mM sodium chromate(pH 8.0) containing 20 mM tetraalkylammoniumbromide at -25kV applied voltage with indirect UV detection at 254 nm. This results in exceedingly short analysis time within 3 min. with efficiencies approaching 200,000 theoretical plates. The coefficients of variants of migration time are less than 0.8% and those of peak area are less than 2.3%. Detection limits for quantitative determination were 300 ppb-50 ppm level. These optimum conditions are applicable to various samples without pretreatment.

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