• Proceedings of the Korean Radioactive Waste Society Conference
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• 2003.11a
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• pp.54-59
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• 2003

Several radionuclides are considered as an object of the assesment to develop a scaling factor and a periodical verification method which are needed for the evaluation of radionuclide inventory of various radioactive wastes from nuclear power plants in Korea. A selective separation of $^{55}Fe$, $^{90}FSr$ 및 $^{94}Nb$ which should be recovered individually for the radiochemical analysis was described in detail. Sorption and desorption behaviours of ion exchange and extraction chromatographic resins for Fe, Sr, Nb and co-existing metal ions were Investigated using an artificial waste solution simulated of chemical composition of real radioactive wastes. Separation conditions available for the sequential recovery of these metal ions from a single sample were optimized to minimize a discharge of radioactive wastes produced through the analytical process and a radiation exposure to analysts. Their recovery yields were measured with reliability.

• Journal of the Korean institute of surface engineering
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• v.36 no.3
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• pp.256-262
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• 2003

The current efficiency and the composition of Zn-Cr and Zn-Cr-X (X : Co, Mn) alloy electrodeposits were investigated by using chloride bath with EDTA auditive and flow cell plating system. The current efficiency of Zn-Cr alloy decreased with increasing current density, while it increased with the content of Co and Mn of the Zn-Cr-X alloy bath in high current density region. The Cr content in Zn-Cr alloy increased from 1.4-2.7 to $28wt\%$ with increasing current density and the phase structure of the alloys changed from $\eta-Zn$ through $\eta-Zn+\gamma'-ZnCr\;to\;\gamma'-ZnCr$ with Increasing Cr content of the alloys. The Co content in Zn-Cr-Co alloys increased with Co content of the bath, while Cr content of the alloy increased or decreased in low current density region $(10-75A/dm^2)$ or high current density region $(75-100A/dm^2)$, respectively. $\gamma-ZnCo$ phase was formed in the Zn-Cr-Co alloy with above $9.0wt\%$ Co. The content of Mn and Cr in Zn-Cr-Mn alloys increased or decreased with the increase of current density in high current density region, respectively while Cr content of the alloy decreased noticeably with the increase of Mn content in the bath. Two phases of $\delta_1-ZnMn$ and $\gamma'-ZnCr$ were formed in the Zn-Cr-Mn alloy with above $8.6wt\%$ Mn.

• Journal of the Korean institute of surface engineering
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• v.47 no.3
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• pp.109-115
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• 2014

High power impulse magnetron sputtering (HIPIMS), also known as the technology is called peak power density in a short period, you can get high, so high ionization sputtering rate can make. Higher ionization of sputtered species to a variety of coating materials conventional in the field of improving the characteristics and self-assisted ion thin film deposition process, which contributes to a superior being. HIPIMS at the same power, but the deposition speed is slow in comparison with DC disadvantages. Since recently as a replacement for HIPIMS modulated pulse power (MPP) has been developed. This ionization rate of the sputtered species can increase the deposition rate is lowered and at the same time to overcome the problems to be reported. The differences between the MPP and the HIPIMS is a simple single pulse with a HIPIMS whereas, MPP is 3 ms in pulse length is adjustable, with the full set of multi-pulses within the pulse period and the pulse is applied can be micro advantages. In this experiment, $In_2O_3$ : $SnO_2$ composition ratio of 9 : 1 wt% target was used, Ar : $O_2$ flow rate ratio is 4.8 to 13.0% of the rate of deposition was carried out at room temperature. Ar 40 sccm and the flow rate of $O_2$ and then fixed 2 ~ 6 sccm was compared against that. The thickness of the thin film deposition is fixed at 60 nm, when the partial pressure of oxygen at 9.1%, the specific resistance value of $4.565{\times}10^{-4}{\Omega}cm$, transmittance 86.6%, mobility $32.29cm^2/Vs$ to obtain the value.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.8
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• pp.470-475
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• 2016

In this study, $Zn_xMn_{3-x}O_4$ (x=0.95~1.20) specimens were prepared by using a conventional mixed oxide method. All specimens were sintered in air at $1,200^{\circ}C$ for 12 h and cooled at a rate of $2^{\circ}C/min$ to $800^{\circ}C$, subsequently quenching to room temperature. We investigated the structural and electrical properties of $Zn_xMn_{3-x}O_4$ specimens with variation of ZnO amount for the application of NTC thermistors. As results of X-ray diffraction patterns, all specimens showed the formation of a complete solid solution with tetragonal spinel phase. And, the second phase was observed by the solubility limit of Zn ions in $x{\geq}1.10$ composition. The average grain size was increased from $2.72{\mu}m$ to $4.18{\mu}m$ with increasing the compositional ratio of Zn ion from x=0.95 to 1.20, respectively. $Zn_{1.10}Mn_{1.90}O_4$ specimen showed the minimum electrical resistance of $57.5k{\Omega}$ at room temperature and activation energy of 0.392 eV.

• Journal of the Korean Ceramic Society
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• v.32 no.12
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• pp.1357-1368
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• 1995

Nasigels of composition Na0.75Zr2PSi2O12 and Na3Zr2PSi2O12 have been synthesized by the sol-gel technique using metal alkoxide precursors. The monolithic dry gels of Na0.75Zr2PSi2O12 with no crack have been prepared by the control of the shrinkage rte, but gels of Na3Zr2PSi2O12 were impossible to prepare without cracking. The gels treated up to 80$0^{\circ}C$ led to the formtion of glass but the glasses were converted to the crystalline phases at above this temperature. Crystaline phases precipitated from the Na0.75Zr2PSi2O12 glass were NASICON-like phase, Na2Si2O5, and free Zirconia. Phase that precipitated from the Na3Zr2PSi2O12 was only rhombohedral NASICON. For Na0.75Zr2PSi2O12 gels, framework of PO4 tetrahedra and SiO4(PO4) tetrahedra formed at low temperature but changed to that of SiO4 and SiO4(PO4) tetrahedras as it were crystallized. In the case of Na3Zr2PSi2O12 gel, framework of isolated PO4 and SiO4 tetrahedras formed at low temperature but changed to SiO4(PO4) tetrahedra framework which usually formed in the NASICON crystal after crystallization at high temperature. The gels treated up to 80$0^{\circ}C$ contained the residual water. The ionic conduction was attributed to the motion of proton and Na+ ion at low (up to 150~20$0^{\circ}C$) and high temperatures, respectively. As the temperature of heat treatment increased, ionic conductivity gradaully increased with the extent of precipitation of crystalline phase.

• Journal of Applied Reliability
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• v.15 no.3
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• pp.197-206
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• 2015

Failure analysis of pre-insulated pipe (SPPS 380, 400A) transporting high temperature water ($95{\sim}110^{\circ}C$) for a plant was carried out. The damaged area (${\Phi}5mm$) of pre-insulated pipe was found only on welds. The chemical composition of damaged pipe meets specification of carbon steel pipes for pressure service (KS D 3562). As results of microstructure analysis, crack propagated from outer to inside after pitting corrosion occurred on the outside surface. The non-metallic inclusion existed on the end of crack. And the non-metallic inclusion continuously and linearly formed along with the bond line of welds. Based on SEM-EDS analysis, the nonmetallic inclusions have higher Manganese (Mn) and Oxygen (O) content but sulfur (S) was not detected. As results of water quality analysis, hydrogen ion concentration and minerals like Fe, Mg, Si were in low level. But the content of dissolved oxygen (11.2 ppm) was slightly higher than that of standard. It seems that the cause of damaged pipe is grooving corrosion due to MnO inclusion formed on bond line and corrosion took place nearby welds.

• Bulletin of the Korean Chemical Society
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• v.33 no.1
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• pp.177-182
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• 2012

A new composition of standardized Scutellariae Radix extract (HPO12) was developed for treatment of Alzheimer's disease. For the preclinical pharmacokinetic study of HPO12, a rapid, sensitive, and selective LCMS/MS method was developed and validated for the simultaneous determination of 4 bioactive compounds, baicalein, baicalin, wogonin, and wogonoside. After extraction with ethylacetate, chromatographic analysis was performed on a Thermo $C_{18}$ column ($150mm{\times}2.1mm$, $3{\mu}m$) with a mobile phase consisting of 0.1% formic acid (A) and 0.1% formic acid in 95% acetonitrile (B) by using gradient elution at a flow rate of $250{\mu}L/min$. Analytes introduced to a mass spectrometer were monitored by multiple reaction monitoring (MRM) in positive ion mode. Using $25{\mu}L$ of plasma sample, the method was validated over the following concentration ranges: 25-5000 ng/mL for baicalein, 20-40000 ng/mL for baicalin, 1-1000 ng/mL for wogonin, and 5-10000 ng/mL for wogonoside. The intra- and inter-day precision and accuracy of the quality control samples at the 4 concentrations showed $\leq$ 13.7% relative standard deviation (RSD) and 86.6-105.5% accuracy. The method was successfully applied to determine the concentrations of baicalein, baicalin, wogonin, and wogonoside in rat plasma after intraperitoneal and oral administrations of HPO12.

• Korean Journal of Materials Research
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• v.14 no.4
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• pp.235-238
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• 2004

The LT-MBE (low temperature molecular beam epitaxy) allows to dope GaAs with Mn over its solubility limit. A 75 urn thick GaMnAs layers are grown on a low temperature grown LT-GaAs buffer layer at a substrate temperature of $260^{\circ}C$ by varying Mn contents ranged from 0.03 to 0.05. The typical growth rate for GaMnAs layer is fixed at 0.97 $\mu\textrm{m}$/h and the V/III ratio is varied from 25 to 34. The electrical and magnetic properties are investigated by Hall effect and superconducting quantum interference device(SQUID) measurements, respectively. Double crystal X-ray diffraction(DCXRD) is also performed to investigate the crystallinity of GaMnAs layers. The $T_{c}$ of the $Ga_{l-x}$ /$Mn_{x}$ As films grown by LT-MBE are enhanced from 38 K to 65 K as x increases from 0.03 into 0.05 whereas the $T_{c}$ becomes lower to 45 K when the V/III ratio increases up to 34 at the same composition of x=0.05. This means that the ferromagnetic exchange coupling between Mn-ion and a hole is affected by the growth condition of the enhanced V/III ratio in which the excess-As and As-antisite defects may be easily incorporated into GaMnAs layer.

• Korean Journal of Materials Research
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• v.17 no.2
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• pp.73-80
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• 2007

For the sub-65 nm CMOS process, it is necessary to develop a new silicide material and an accompanying process that allows the silicide to maintain a low sheet resistance and to have an enhanced thermal stability, thus providing for a wider process window. In this study, we have evaluated the property and unit process compatibility of newly proposed composite silicides. We fabricated composite silicide layers on single crystal silicon from $10nm-Ni_{1-x}Co_x/single-crystalline-Si(100),\;10nm-Ni_{1-x}Co_x/poly-crystalline-\;Si(100)$ wafers (x=0.2, 0.5, and 0.8) with the purpose of mimicking the silicides on source and drain actives and gates. Both the film structures were prepared by thermal evaporation and silicidized by rapid thermal annealing (RTA) from $700^{\circ}C\;to\;1100^{\circ}C$ for 40 seconds. The sheet resistance, cross-sectional microstructure, surface composition, were investigated using a four-point probe, a field emission scanning probe microscope, a field ion beam, an X-ray diffractometer, and an Auger electron depth profi1ing spectroscopy, respectively. Finally, our newly proposed composite silicides had a stable resistance up to $1100^{\circ}C$ and maintained it below $20{\Omega}/Sg$., while the conventional NiSi was limited to $700^{\circ}C$. All our results imply that the composite silicide made from NiCo alloy films may be a possible candidate for 65 nm-CMOS devices.

• Journal of Powder Materials
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• v.25 no.1
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• pp.7-11
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• 2018

In this study, we synthesize tungsten oxide thin films by electrodeposition and characterize their electrochromic properties. Depending on the deposition modes, compact and porous tungsten oxide films are fabricated on a transparent indium tin oxide (ITO) substrate. The morphology and crystal structure of the electrodeposited tungsten oxide thin films are investigated by scanning electron microscopy (SEM) and X-ray diffraction (XRD). X-ray photoelectron spectroscopy is employed to verify the chemical composition and the oxidation state of the films. Compared to the compact tungsten oxides, the porous films show superior electrochemical activities with higher reversibility during electrochemical reactions. Furthermore, they exhibit very high color contrast (97.0%) and switching speed (3.1 and 3.2 s). The outstanding electrochromic performances of the porous tungsten oxide thin films are mainly attributed to the porous structure, which facilitates ion intercalation/deintercalation during electrochemical reactions.