• JSTS:Journal of Semiconductor Technology and Science
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• 제6권2호
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• pp.101-105
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• 2006

Nanoscale floating-gate characteristic of colloidal Au nanoparticles electrostatically assembled on the oxidized surface of Si nanowires have been investigated. The Si nanowire split-gate transistor structure was fabricated by electron beam lithography and subsequent reactive ion etching. Colloidal Au nanoparticles with ${\sim}5$ nm diameters were selectively deposited onto the Si nanowire surface by 2 min electrophoresis. It was found that electric fields applied to the self-aligned split side gates allowed charge to be transferred on the Au nanoparticles. It was observed that the depletion mode cutoff voltage, induced by the self-aligned side gates, was shifted by more than 1 V after Au nanoparticle electrophoresis. This may be due to the semi-one dimensional nature of the narrow Si nanowire transport channel, having much enhanced sensitivity to charges on the surface.

• 한국정밀공학회지
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• 제21권6호
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• pp.153-159
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• 2004

In this study, a new process to pattern directly on a thin metal layer using improved nano replication printing (nRP) process is suggested to evaluate the possibilities of fabricating a stamp for nano-imprinting. In the nRP process, any figure can be replicated from a bitmap figure file in the range of several micrometers with nano-scaled details. In the process, liquid-state resins are polymerized by two-photon absorption which is induced by femto-second laser. A thin gold layer was sputtered on a glass plate and then, designed patterns or figures were developed on the gold layer by newly developed top-down building approach. Generally, stamps fur nano-imprinting have been fabricated by using the costly electron-beam lithography process combined with a reactive ion-etching process. Through this study, the effectiveness of the improved nRP process is evaluated to make a stamp with the resolution of around 200nm with reduced cost.

• 한국정밀공학회지
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• 제31권12호
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• pp.1101-1106
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• 2014

Hybrid manufacturing technology has been advanced to overcome limitations due to traditional fabrication methods. To fabricate a micro/nano-scale structure, various manufacturing technologies such as lithography and etching were attempted. Since these manufacturing processes are limited by their materials, temperature and features, it is necessary to develop a new three-dimensional (3D) printing method. A novel nano-scale 3D printing system was developed consisting of the Nano-Particle Deposition System (NPDS) and the Focused Ion Beam (FIB) to overcome these limitations. By repeating deposition and machining processes, it was possible to fabricate micro/nano-scale 3D structures with various metals and ceramics. Since each process works in different chambers, a transfer process is required. In this research, nanoscale 3D printing system was briefly explained and an alignment algorithm for nano-scale 3D printing system was developed. Implementing the algorithm leads to an accepted error margin of 0.5% by compensating error in rotational, horizontal, and vertical axes.

• 마이크로전자및패키징학회지
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• 제14권2호
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• pp.17-21
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• 2007

밀도가 높고 주기적으로 배열된 실리콘 나노점이 실리콘 기판위에 형성 되었다. 실리콘 나노점을 형성하기 위해 사용된 나노패턴의 지름은 $15{\sim}40$ 나노미터(nm)이고 깊이는 40 nm 이었으며 기공과 기공 사이의 거리는 $40{\sim}80\;nm$ 이었다. 나노미터 크기의 패턴을 형성시키기 위해서 자기조립물질을 사용했으며 폴리스티렌(PS) 바탕에 벌집형태로 평행하게 배열된 실린더 모양의 폴리메틸메타아크릴레이트(PMMA)의 구조를 형성하였다. 폴리메틸메타아크릴레이트를 아세트산으로 제거하여 폴리스티렌만 남아있는 나노크기의 마스크를 만들었다. 형성된 나노패턴에 전자빔 기상증착장치를 사용하여 금 박막을 $100\;{\AA}$ 증착하고 리프트오프(lift-off) 방식으로 금 나노점을 만들었다. 형성된 금 나노점을 불소기반의 화학반응성 식각법을 이용하여 식각하고 황산으로 제거하였다. 형성된 실리콘 나노점의 지름은 $30{\sim}70\;nm$였고 높이는 $10{\sim}20\;nm$ 였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.348-348
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• 2011

Carbon nanotube (CNT) field effect transistors and sensors use CNT as a current channel, of which the resistance varies with the gate voltage or upon molecule adsorption. Since the performance of CNT devices depends very much on the CNT/metal contact resistance, the CNT/electrode contact must be stable and the contact resistance must be small. Depending on the geometry of CNT/electrode contact, it can be categorized into the end-contact, embedded-contact (top-contact), and side-contact (bottom-contact). Because of difficulties in the sample preparation, the end-contact CNT device is seldom practiced. The embedded-contact in which CNT is embedded inside the electrode is desirable due to its rigidness and the low contact resistance. Fabrication of this structure is complicated, however, because each CNT has to be located under a high-resolution microscope and then the electrode is patterned by electron beam lithography. The side-contact is done by depositing CNT electrophoretically or by precipitating on the patterned electrode. Although this contact is fragile and the contact resistance is relatively high, the side-contact by far has been widely practiced because of its simple fabrication process. Here we introduce a simple method to embed CNT inside the electrode while taking advantage of the bottom-contact process. The idea is to utilize a eutectic material as an electrode, which melts at low temperature so that CNT is not damaged while annealing to melt the electrode to embed CNT. The lowering of CNT/Au contact resistance upon annealing at mild temperature has been reported, but the electrode in these studies did not melt and CNT laid on the surface of electrode even after annealing. In our experiment, we used a eutectic Au/Al film that melts at 250$^{\circ}C$. After depositing CNT on the electrode made of an Au/Al thin film, we annealed the sample at 250$^{\circ}C$ in air to induce eutectic melting. As a result, Au-Al alloy grains formed, under which the CNT was embedded to produce a rigid and low resistance contact. The embedded CNT contact was as strong as to tolerate the ultrasonic agitation for 90 s and the current-voltage measurement indicated that the contact resistance was lowered by a factor of 4. By performing standard fabrication process on this CNT-deposited substrate to add another pair of electrodes bridged by CNT in perpendicular direction, we could fabricate a CNT cross junction. Finally, we could conclude that the eutectic alloy electrode is valid for CNT sensors by examine the detection of Au ion which is spontaneously reduced to CNT surface. The device sustatined strong washing process and maintained its detection ability.