• Journal of Electrochemical Science and Technology
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• v.13 no.1
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• pp.71-77
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• 2022

Metal halide perovskites are promising photovoltaic materials, but they still have some issues that need to be solved. Hysteresis is a phenomenon that strongly is correlated with ion migration; thus, a fast, easy, and low-temperature method for measuring ion migration is required. Through selective blocking, ion migration can be measured separately, apart from electron migration. In this study, ion migration in metal halide perovskites was measured using a vertical device. At different temperatures, ionic activation energies were obtained for a range of perovskite compositions such as MAPbI₃, FAPbI₃, CsPbI₃, and MAPbBr₃. By comparing the measured ionic activation energies with the theoretical values, we conclude that among other possibilities, I^- is the migrating ion in MAPbI₃, FAPbI₃, CsPbI₃, and Br- is the migrating in MAPbBr₃.

• Environmental Engineering Research
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• v.20 no.3
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• pp.205-211
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• 2015

Reduced forms of iron, such as zero-valent ion (ZVI) and ferrous ion (Fe[II]), can activate dissolved oxygen in water into reactive oxidants capable of oxidative water treatment. The corrosion of ZVI (or the oxidation of (Fe[II]) forms a hydrogen peroxide ($H_2O_2$) intermediate and the subsequent Fenton reaction generates reactive oxidants such as hydroxyl radical ($^{\bullet}OH$) and ferryl ion (Fe[IV]). However, the production of reactive oxidants is limited by multiple factors that restrict the electron transfer from iron to oxygen or that lead the reaction of $H_2O_2$ to undesired pathways. Several efforts have been made to enhance the production of reactive oxidants by iron-induced oxygen activation, such as the use of iron-chelating agents, electron-shuttles, and surface modification on ZVI. This article reviews the chemistry of oxygen activation by ZVI and Fe(II) and its application in oxidative degradation of organic contaminants. Also discussed are the issues which require further investigation to better understand the chemistry and develop practical environmental technologies.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.140-140
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• 2010

Non-mass analyzed ion shower doping (ISD) technique with a bucket-type ion source or mass-analyzed ion implantation with a ribbon beam-type has been used for source/drain doping, for LDD (lightly-doped-drain) formation, and for channel doping in fabrication of low-temperature poly-Si thin-film transistors (LTPS-TFT's). We reported an abnormal activation behavior in boron doped poly-Si where reverse annealing, the loss of electrically active boron concentration, was found in the temperature ranges between $400^{\circ}C$ and $650^{\circ}C$ using isochronal furnace annealing. We also reported reverse annealing behavior of sequential lateral solidification (SLS) poly-Si using isothermal rapid thermal annealing (RTA). We report here the importance of implantation conditions on the dopant activation. Through-doping conditions with higher energies and doses were intentionally chosen to understand reverse annealing behavior. We observed that the implantation condition plays a critical role on dopant activation. We found a certain implantation condition with which the sheet resistance is not changed at all upon activation annealing.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.346-349
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• 2002

High Power and high dose ion implantation is essentially needed to make power MOSFET devices based on SiC wafers, because the diffusivities of the impurities such as Al, N, p, B in SiC crystal are very low. In addition, it is needed high temperature annealing for electrical activation of the implanted species. Due to the very high annealing temperature, the surface morphology after electrical activation annealing becomes very rough. We have found the different surface morphologies between implanted and unimplanted region. The unimplanted region showed smoother surface morphology It implies that the damage induced by high energy ion implantation affects the roughening mechanism. Some parts of Si-C bonding are broken in the damaged layer, s\ulcorner the surface migration and sublimation become easy. Therefore the macrostep formation will be promoted. N-type 4H-SiC wafers, which were Al ion implanted at acceleration energy ranged from 30kev to 360kev, were activated at 1600$^{\circ}C$ for 30min. The pre-activation annealing for damage relaxation was performed at 1100-1500$^{\circ}C$ for 30min. The surface morphologies of pre-activation annealed and activation annealed were characterized by atomic force microscopy(AFM).

• Bulletin of the Korean Chemical Society
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• v.18 no.3
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• pp.280-286
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• 1997

Potential energy function sets for some ion-exchanged A-type zeolites, K-A and Rb11Na1-A, were determined by introducing the X-ray crystal structures as constraints. The potential functions reproduced well the X-ray crystal structures of the monovalent ion-exchanged zeolites. The activation energies for the en- or de-capsulation of small molecules (H2, O2, N2, and CH4) and inert gases from the α-cage of model zeolites (Na-A, K-A, Rb11Na1-A, and Cs3Na9-A) were obtained by the molecular mechanical calculations. The calculated activation energies agreed well with experimental results.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.34D no.5
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• pp.45-51
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• 1997

Low temperature activation of dopants which were doped using ion mass doping system in amorphous silicon(a-Si) thin films was investigated. With a 20.angs.-thick Ni film on top of the a-Si thin film, the activation temperature of dopants lowered to 500.deg. C. When the doping was performaed after the deposition of Ni thin film on the a-Si thin films (post-doping), the activation time was shorter than that of dopants mass, the activation time of the dopants doped by pre-doping method increased. It turned NiSi2 formation, while the decrease of activation time was mainly due to the enhancement of the NiSi2 formation by mixing of Ni and a-Si at the interface of Ni and a -Si thin during the ion doping process.

• Journal of the Semiconductor & Display Technology
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• v.3 no.1
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• pp.35-39
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• 2004

Statistical design of experiments was successfully employed to investigate the effect of alternating magnetic field on activation of polycrystalline Si (p-Si) doped as n-type using $\textrm{PH}_3$, by full factorial design of three factors with two levels. In this design, the input variables are graphite size, alternating current, and activation time. The output parameter, sheet resistance, is analyzed in terms of the primary effects and multi-factor interactions. Notably, the three-factor interaction is calculated to be a dominant interaction. The interaction between graphite size and activation time and the main effect of current are important effects compared to the other variables and relevant interactions. Alternating magnetic flux activation is proved a significantly beneficial processing technique.

• Electrical & Electronic Materials
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• v.9 no.3
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• pp.284-290
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• 1996

The electrical properties of bulk galsses in the system Na$_{2}$O-CaO-Al$_{2}$O$_{3}$-B$_{2}$O$_{3}$-SiO$_{2}$ containing 20 to 30mol% sodium which have been subjected to a sodium .tautm. silver ion exchange reaction for 24, 36 and 48 hrs. were analysed by impedance spectroscopy method. Ion exchanged glasses exhibit activation energy values lower than those of the untreated ones. The electrical conductivity increase with sodium content and ion exchanging time. In this experiment the electrical conductivity exhibits a manximum value of 1.78*10$^{-4}$ S/cm at 200.deg. C which contains 30mol% sodium and subjects ion exchange reaction for 48hrs.

• Korean Journal of Materials Research
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• v.18 no.10
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• pp.552-556
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• 2008

Modified thermal annealing was applied to the activation of the polycrystalline silicon films doped as p-type through implantation of $B_2H_6$. The statistical design of experiments was successfully employed to investigate the effect of rapid thermal annealing on activation of polycrystalline Si doped as p-type. In this design, the input variables are furnace temperature, power of halogen lamps, and alternating magnetic field. The degree of ion activation was evaluated as a function of processing variables, using Hall effect measurements and Raman spectroscopy. The main effects were estimated to be furnace temperature and RTA power in increasing conductivity, explained by recrystallization of doped ions and change of an amorphous Si into a crystalline Si lattice. The ion activation using rapid thermal annealing is proven to be a highly efficient process in low temperature polycrystalline Si technology.

• Proceedings of the Materials Research Society of Korea Conference
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• 1994.05a
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• pp.159-159
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• 1994