• Title/Summary/Keyword: inversion height

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The Effect of Total Contact Inserts on the Gait Parameters During High-Heeled Shoes Walking (높은 굽 신발 보행 시 전면 접촉인솔이 보행 변수에 미치는 영향)

  • Moon, Gon-Sung;Kim, Tack-Hoon
    • Physical Therapy Korea
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    • v.18 no.2
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    • pp.1-8
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    • 2011
  • The purpose of this study was to investigate the effect of high heeled shoes with the total contact insert (TCI) on the frontal plane of the joints for the lower extremity during the gait. Ten healthy females voluntarily participated in this study and the height of the high heeled shoes was 7 cm. A three-dimensional motion analysis system (VICON) and force plates were used to analyze the movements of the joints for the lower extremities. The results were as follows: There were no significant differences for the angle value on the event of the gait cycle in the maximum eversion and inversion of the ankle joint, the varus and valgus of the knee joint, and the adduction and abduction of the hip joint (p>.05). But, there was a significant difference or the range of motion in the ankle joint (p<.05). The value of ankle and knee moment with a TCI was less than the value for no TCI. And there were significant differences for the moment value of the maximum inversion and eversion on the ankle joint and for the maximum varus and valgus on the knee joint (p<.05). Therefore, a TCI would be effective in stabilizing the joints of the lower extremities and increasing the balance of a body to reduce the injure from a fall during the gait.

High Temperature Characterization of Accumulation-mode Pi-gate pMOSFETs (고온에서 accumulation-mode Pi-gate p-MOSFET 특성)

  • Kim, Jin-Young;Yu, Chong-Gun;Park, Jong-Tae
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.47 no.7
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    • pp.1-7
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    • 2010
  • The device performances of accumulation-mode Pi-gate pMOSFETs with different fin widths have been characterized at high operating temperatures. The device fin height is 10nm and fin widths are 30nm, 40nm, and 50nm. The variation of the drain current, threshold voltage, subthreshold swing, effective mobility, and leakage current have been investigated as a function of operating temperatures. The drain current at high temperature is slightly larger than at room temperature. The variation of the threshold voltage as a function of the operating temperature is smaller than that of the inversion-mode MOSFETs. The effective mobility is decreased with the increase of operating temperature. It is observed that the effective mobility is enhanced as the fin width decreases.

Retrieval of surface parameters in tidal flats using radar backscattering model and multi-frequency SAR data

  • Choe, Byung-Hun;Kim, Duk-Jin
    • Korean Journal of Remote Sensing
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    • v.27 no.3
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    • pp.225-234
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    • 2011
  • This study proposes an inversion algorithm to extract the surface parameters, such as surface roughness and soil moisture contents, using multi-frequency SAR data. The study areas include the tidal flats of Jebu Island and the reclaimed lands of Hwaong district on the western coasts of the Korean peninsula. SAR data of three frequencies were accordingly calibrated to provide precise backscattering coefficients through absolute radiometric calibration. The root mean square (RMS) height and the correlation length, which can describe the surface roughness, were extracted from the backscattering coefficients using the inversion of the Integral Equation Method (IEM). The IEM model was appropriately modified to accommodate the environmental conditions of tidal flats. Volumetric soil moisture was also simultaneously extracted from the dielectric constant using the empirical model, which define the relations between volumetric soil moistures and dielectric constants. The results obtained from the proposed algorithm were verified with the in-situ measurements, and we confirmed that multi-frequency SAR observations combined with the surface scattering model for tidal flats can be used to quantitatively retrieve the geophysical surface parameters in tidal flats.

Error Accumulation and Transfer Effects of the Retrieved Aerosol Backscattering Coefficient Caused by Lidar Ratios

  • Liu, Houtong;Wang, Zhenzhu;Zhao, Jianxin;Ma, Jianjun
    • Current Optics and Photonics
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    • v.2 no.2
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    • pp.119-124
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    • 2018
  • The errors in retrieved aerosol backscattering coefficients due to different lidar ratios are analyzed quantitatively in this paper. The actual calculation shows that the inversion error of the aerosol backscattering coefficients using the Fernald backward-integration method increases with increasing inversion distance. The greater the error in the lidar ratio, the faster the error in the aerosol backscattering coefficient increases. For the same error in lidar ratio, the smaller actual aerosol backscattering coefficient will get the larger relative error of the retrieved aerosol backscattering coefficient. The errors in the lidar ratios for dust or the cirrus layer have great impact on the retrievals of backscattering coefficients. The interval between the retrieved height and the reference range is one of the important factors for the derived error in the aerosol backscattering coefficient, which is revealed quantitatively for the first time in this paper. The conclusions of this article can provide a basis for error estimation in retrieved backscattering coefficients of background aerosols, dust and cirrus layer. The errors in the lidar ratio of an aerosol layer influence the retrievals of backscattering coefficients for the aerosol layer below it.

Cold Cathode using Avalanche Phenomenon at the Inversion Layer (반전층에서의 애벌런치 현상을 이용한 냉음극)

  • Lee, Jung-Yong
    • Journal of the Korean Vacuum Society
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    • v.16 no.6
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    • pp.414-423
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    • 2007
  • Field Emission Display(FED) has significant advantages over existing display technologies, particularly in the area of small and high quality display. In order to test the feasibility of fabricating the System-on-Chip(SOC) with FED, we conducted the experiment to use the p-n junction as an electron beam source for the flat panel display. A novel structure was constructed to form p-n junctions by generating inversion layer with the electric field from the cantilever style gate. When we applied more than 220V at the cantilever style gate which has a height of $1{\mu}m$, avalanche breakdown onset was successfully achieved. The characteristics was compared with the electron emission from the ultra shallow junction in the avalanche region. The experiment result and the future direction were discussed.

Molecular Orbital Studies on the Reaction Path and Reactivity of $S_N2$ Reactions. Determination of Reactivity by MO Theory (Part 69) (SN2 반응의 반응경로 및 반응성에 관한 분자궤도함수 이론적 연구)

  • Lee, Ik Choon;Cho, Jeoung Ki;Lee, Hae Hwang;O, Hyeok Geun
    • Journal of the Korean Chemical Society
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    • v.34 no.3
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    • pp.239-247
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    • 1990
  • The gas-phase S_N2$ reactions can be classified into neutral bimolecular, solvated, and ionic reactions; the neutral bimolecular reaction proceeds via retention mechanism whereas the ionic reaction produces inversion products. In the reaction of solvated nucleophile with one solvent molecule, a six-center transition state (TS) is formed and the two processes i.e., retention and inversion, are found to compete with a favored path depending on the electronic effect of the nucleophile and substituents in the substrate and on the steric requirement. In the ionic reaction, the difference in the energy barrier between the two processes reduces to a small value when the substrate methyl group is made bulky, leaving ability of the leaving group is improved and at the same time the negative charge of the nucleophile is dispersed. When the reaction center atom in the $S_N2$ reaction is changed to a larger sized second row elements, the activation barrier decreases since the steric crowding in the penta-coordinated TS is relieved. However within the same row, the barrier was found to increase as the atomic size decreased. For the boron, B, the barrier height was the least since in addition to the relatively large atomic size compared to C and N, it forms tetra-coordinated TS so that the steric crowding becomes nearly negligible.

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Laboratory Experimentals and Numerical Analysis for Development of a Atmospheric Mixed Layer (대기 혼합층 발달 과정의 모형 실험과 수치 해석)

  • 이화운
    • Journal of Environmental Science International
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    • v.2 no.1
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    • pp.17-26
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    • 1993
  • The layer that is directly influenced by ground surface is called the atmospheric boutsdary layer in comparison with the free atmosphere of higher layer. In the boundary layer, the changes of wind, temperature and coefficient of turbulent diffusion in altitude are large and have great influences an atmospheric diffusion. The purpose of this paper is to express the structure and characteristics of development of mixed layer by using laboratory experiment and numerical simulation. Laboratory experiment using water tank are performed that closely simulate the process of break up of nocturnal surface inversion above heated surface and its phenomena are analyzed by the use of horizontally averaged temperature which is observed. The result obtained from the laboratory experiment is compared with theoretical ones from ; \textsc{k}-\varepsilon numerical model. The results are summarized as follows. 1) The horizontally averaged temperature was found to vary smoothly with height and the mixed layer developed obviously being affected by the convection. 2) The mean height of mixed layer may be predicted as a function of time, knowing the mean initial temperature gradient. The experimental values are associated well with the theoretical values computed for value of the universal constant $C_r$= 0.16, our $C_r$ value is little smaller than the value found by Townsend and Deardoru et al.

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EFFECT OF PARTITION AND SPECIES DIFFUSIVITY ON DOUBLE DIFFUSIVE CONVECTION OF WATER NEAR DENSITY MAXIMUM

  • Sivasankaran, S.;Kandaswamy, P.
    • Journal of the Korean Society for Industrial and Applied Mathematics
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    • v.11 no.1
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    • pp.71-83
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    • 2007
  • The double diffusive convection of cold water in the vicinity of its density maximum in a rectangular partitioned enclosure of aspect ratio 5 with isothermal side walls and insulated top and bottom is studied numerically. A thin partition is attached to the hot wall. The species diffusivity of the fluid is assumed to vary linearly with concentration. The governing equations are solved by finite difference scheme. The effects of position and height of the partition, variable species diffusivity and enclosure width are analyzed for various hot wall temperatures. It has been found that adding partition on the hot wall reduces the heat transfer. The density inversion of the water has a great influence on the natural convection. When increasing species diffusivity parameter heat and mass transfer rate is decreased.

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Effects of Channel Electron In-Plane Velocity on the Capacitance-Voltage Curve of MOS Devices

  • Mao, Ling-Feng
    • ETRI Journal
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    • v.32 no.1
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    • pp.68-72
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    • 2010
  • The coupling between the transverse and longitudinal components of the channel electron motion in NMOS devices leads to a reduction in the barrier height. Therefore, this study theoretically investigates the effects of the in-plane velocity of channel electrons on the capacitance-voltage characteristics of nano NMOS devices under inversion bias. Numerical calculation via a self-consistent solution to the coupled Schrodinger equation and Poisson equation is used in the investigation. The results demonstrate that such a coupling largely affects capacitance-voltage characteristic when the in-plane velocity of channel electrons is high. The ballistic transport ensures a high in-plane momentum. It suggests that such a coupling should be considered in the quantum capacitance-voltage modeling in ballistic transport devices.

An Analytical Model of the First Eigen Energy Level for MOSFETs Having Ultrathin Gate Oxides

  • Yadav, B. Pavan Kumar;Dutta, Aloke K.
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.10 no.3
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    • pp.203-212
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    • 2010
  • In this paper, we present an analytical model for the first eigen energy level ($E_0$) of the carriers in the inversion layer in present generation MOSFETs, having ultrathin gate oxides and high substrate doping concentrations. Commonly used approaches to evaluate $E_0$ make either or both of the following two assumptions: one is that the barrier height at the oxide-semiconductor interface is infinite (with the consequence that the wave function at this interface is forced to zero), while the other is the triangular potential well approximation within the semiconductor (resulting in a constant electric field throughout the semiconductor, equal to the surface electric field). Obviously, both these assumptions are wrong, however, in order to correctly account for these two effects, one needs to solve Schrodinger and Poisson equations simultaneously, with the approach turning numerical and computationally intensive. In this work, we have derived a closed-form analytical expression for $E_0$, with due considerations for both the assumptions mentioned above. In order to account for the finite barrier height at the oxide-semiconductor interface, we have used the asymptotic approximations of the Airy function integrals to find the wave functions at the oxide and the semiconductor. Then, by applying the boundary condition at the oxide-semiconductor interface, we developed the model for $E_0$. With regard to the second assumption, we proposed the inclusion of a fitting parameter in the wellknown effective electric field model. The results matched very well with those obtained from Li's model. Another unique contribution of this work is to explicitly account for the finite oxide-semiconductor barrier height, which none of the reported works considered.