• Analytical Science and Technology
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• v.6 no.2
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• pp.197-205
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• 1993

Blends of elemental Ni and 20 weight % Cr powder were milled for different period in a laboratory attritor. Powder size distribution, microstructure and X-ray diffraction characteristics were investigated as a function of processing period. Saturated magnetization, Ms and coercive force, Hc we also measured and compared with plasma melted ingot to confirm the mechanically alloyed states. Mechanical alloying occurred as a consequence of the partition of powders and the increase of interfacial area driving diffusing of Cr into Ni. However, magnetic properties of chemically homogeneous solid solution like melted ingot has not been observed even though steady state of submicron grain size has been achieved after milling over 15 hrs. Further mechanical alloying period gave refinement of grain size, which resulted in the increase of alloyed layer. It is concluded that homogenization should be controlled by the increase of interfacial area between constitutive powders caused by plastic particle deformation and by the diffusion of Cr within the alloyed phase into Ni-rich phase through lattice defects.

• Korean Journal of Materials Research
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• v.28 no.5
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• pp.268-272
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• 2018

An $Al_2O_3/AlN$ bilayer deposited on GaN by atomic layer deposition (ALD) is employed to prepare $Al_2O_3/AlN/GaN$ metal-insulator-semiconductor (MIS) diodes, and their interfacial properties are investigated using X-ray photoelectron spectroscopy (XPS) with sputter etch treatment and current-voltage (I-V) measurements. XPS analyses reveal that the native oxides on the GaN surface are reduced significantly during the early ALD stage, indicating that AlN deposition effectively clelans up the GaN surface. In addition, the suppression of Al-OH bonds is observed through the ALD process. This result may be related to the improved device performance because Al-OH bonds act as interface defects. Finally, temperature dependent I-V analyses show that the barrier height increases and the ideality factor decreases with an increase in temperature, which is associated with the barrier inhomogeneity. A Modified Richardson plot produces the Richardson constant of $A^{**}$ as $30.45Acm^{-2}K^{-2}$, which is similar to the theoretical value of $26.4Acm^{-2}K^{-2}$ for n-GaN. This indicates that the barrier inhomogeneity appropriately explains the forward current transport across the $Au/Al_2O_3/AlN/GaN$ interface.

• Transactions of Materials Processing
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• v.28 no.3
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• pp.135-144
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• 2019

Electromagnetic impulse welding (EMIW) is a type of solid state welding using the Lorentz force generated by interaction between the magnetic field of the coil and the current induced in the workpiece. Although many experimental studies have been investigated on the expansion and compression welding of tube using the EMIW process, studies on the EMIW process of lap joint between flat sheets are uncommon. Since the magnetic field enveloped inside the tube can be controlled with ease, the electromagnetic technique has been widely used for tube welding. Conversely, it is difficult to control the magnetic field in the flat sheet welding so as to obtain the required welding velocity. The current study analyzed the effects of coil shape on the impulse velocity for suitable flat one-turn coil for the EMIW of the flat sheets. The finite element (FE) multi-physics simulation involving magnetic and structural field of EMIW were conducted with the commercial software LS-DYNA to evaluate the several shape variables, viz., influence of various widths, thicknesses, gaps and standoff distances of the flat one-turn coil on the impulse velocity. To obtain maximum impulse velocity, the flat one-turn coil was designed based on the FE simulation results. The experiments were performed using an aluminum alloy 1050 sheets of 1.0mm thickness using the designed flat one-turn coil. Through the microscopic interfacial analysis of the welded specimens, the interfacial connectivity was observed to have no defects. In addition, the single lap joint tests were performed to evaluate the welding strength, and a fracture occurred in the base material. As a result, a flat one-turn coil was successfully designed to guarantee welding with bond strength equal to or greater than the base material strength.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.2
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• pp.162-167
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• 1999

GaN epilayers deposited by the OMVPE method on sapphires with 3 different surface orientations were investigated by TEM and their difference in mucrostructure were compared with each other. GaN epilayers were grown on the all three kinds of sapphire substrates; however, the best interfacial state and crystallinity were observed in the specimen using a {0001} substrate The density of defects in GaN epilayers on {0001} substrates was also less than others. No buffer layer was found at the interfaces of all the specimens; however, it was observed that the region which shows lattice distortion at the interface was only a few nonameter wide. Accordingly, TEM investigation revealed that GaN epilayers having some internal defects could be grown on sapphire {1120} and {1102} planes without a buffer layer, and the hetero-epitaxial GaN films were obtained from the specimen using {0001} substrates with the microstructural point of view.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.160-160
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• 2015

InGaZnO (IGZO) thin-film transistors (TFTs) are very promising due to their potential use in high performance display backplane [1]. However, the stability of IGZO TFTs under the various stresses has been issued for the practical IGZO applications [2]. Up to now, many researchers have studied to understand the sub-gap density of states (DOS) as the root cause of instability [3]. Nomura et al. reported that these deep defects are located in the surface layer of the IGZO channel [4]. Also, Kim et al. reported that the interfacial traps can be affected by different RF-power during RF magnetron sputtering process [5]. It is well known that these trap states can influence on the performances and stabilities of IGZO TFTs. Nevertheless, it has not been reported how these defect states are created during conventional RF magnetron sputtering. In general, during conventional RF magnetron sputtering process, negative oxygen ions (NOI) can be generated by electron attachment in oxygen atom near target surface and accelerated up to few hundreds eV by self-bias of RF magnetron sputter; the high energy bombardment of NOIs generates bulk defects in oxide thin films [6-10] and can change the defect states of IGZO thin film. In this study, we have confirmed that the NOIs accelerated by the self-bias were one of the dominant causes of instability in IGZO TFTs when the channel layer was deposited by conventional RF magnetron sputtering system. Finally, we will introduce our novel technology named as Magnetic Field Shielded Sputtering (MFSS) process [9-10] to eliminate the NOI bombardment effects and present how much to be improved the instability of IGZO TFTs by this new deposition method.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.466-468
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• 2012

Amorphous InGaZnO (${\alpha}$-IGZO) thin-film transistors (TFTs) are are very promising due to their potential use in thin film electronics and display drivers [1]. However, the stability of AOS-TFTs under the various stresses has been issued for the practical AOSs applications [2]. Up to now, many researchers have studied to understand the sub-gap density of states (DOS) as the root cause of instability [3]. Nomura et al. reported that these deep defects are located in the surface layer of the ${\alpha}$-IGZO channel [4]. Also, Kim et al. reported that the interfacial traps can be affected by different RF-power during RF magnetron sputtering process [5]. It is well known that these trap states can influence on the performances and stabilities of ${\alpha}$-IGZO TFTs. Nevertheless, it has not been reported how these defect states are created during conventional RF magnetron sputtering. In general, during conventional RF magnetron sputtering process, negative oxygen ions (NOI) can be generated by electron attachment in oxygen atom near target surface and accelerated up to few hundreds eV by self-bias of RF magnetron sputter; the high energy bombardment of NOIs generates bulk defects in oxide thin films [6-10] and can change the defect states of ${\alpha}$-IGZO thin film. In this paper, we have confirmed that the NOIs accelerated by the self-bias were one of the dominant causes of instability in ${\alpha}$-IGZO TFTs when the channel layer was deposited by conventional RF magnetron sputtering system. Finally, we will introduce our novel technology named as Magnetic Field Shielded Sputtering (MFSS) process [9-10] to eliminate the NOI bombardment effects and present how much to be improved the instability of ${\alpha}$-IGZO TFTs by this new deposition method.

• Computers and Concrete
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• v.24 no.3
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• pp.207-222
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• 2019

This paper has presented an effective and accurate meso-scale finite element model for simulating the fracture process of concrete under compression-shear loading. In the proposed model, concrete is parted into four important phases: aggregates, cement matrix, interfacial transition zone (ITZ), and the initial defects. Aggregate particles were modelled as randomly distributed polygons with a varying size according to the sieve curve developed by Fuller and Thompson. With regard to initial defects, only voids are considered. Cohesive elements with zero thickness are inserted into the initial mesh of cement matrix and along the interface between aggregate and cement matrix to simulate the cracking process of concrete. The constitutive model provided by ABAQUS is modified based on Wang's experiment and used to describe the failure behaviour of cohesive elements. User defined programs for aggregate delivery, cohesive element insertion and modified facture constitutive model are developed based on Python language, and embedded into the commercial FEM package ABAQUS. The effectiveness and accuracy of the proposed model are firstly identified by comparing the numerical results with the experimental ones, and then it is used to investigate the effect of meso-structure on the macro behavior of concrete. The shear strength of concrete under different pressures is also involved in this study, which could provide a reference for the macroscopic simulation of concrete component under shear force.

• Korean Journal of Materials Research
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• v.32 no.9
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• pp.396-402
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• 2022

In this study, surface roughness and interfacial defect characteristics were analyzed after forming a high-k oxide film on the surface of a prime wafer and a test wafer, to study the possibility of improving the quality of the test wafer. As a result of checking the roughness, the deviation in the test after raising the oxide film was 0.1 nm, which was twice as large as that of the Prime. As a result of current-voltage analysis, Prime after PMA was 1.07 × 10 A/cm² and Test was 5.61 × 10 A/cm², which was about 5 times lower than Prime. As a result of analyzing the defects inside the oxide film using the capacitance-voltage characteristic, before PMA Prime showed a higher electrical defect of 0.85 × 10¹² cm^-2 in slow state density and 0.41 × 10¹³ cm^-2 in fixed oxide charge. However, after PMA, it was confirmed that Prime had a lower defect of 4.79 × 10¹¹ cm^-2 in slow state density and 1.33 × 10¹² cm^-2 in fixed oxide charge. The above results confirm the difference in surface roughness and defects between the Test and Prime wafer.

• Korean Journal of Materials Research
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• v.4 no.2
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• pp.127-135
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• 1994

We investigated the bonding interfaces of directly-bonded Si-Si and $Si-Sio_{2}$/Si wafer pairs. By the angle lapping-delineation, anisotropic etching, and (FIR)-TEM observation methods, we studied on the interface defects and the transient region originated from the interface stress, the various types of voids, the formation and stability of interfacial oxide. We also compared the interface image of the bonded $Si-Sio_{2}$ with that of a typically grown $Si-Sio_{2}$.

• Journal of the Korean Ceramic Society
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• v.49 no.6
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• pp.637-641
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• 2012

Due to its high production cost and relatively high energy consumption during the Siemens process, poly-silicon makers have been continuously and eagerly sought another silicon route for decades. One candidate that consumes less energy and has a simpler acidic and metallurgical purification procedure is upgraded metallurgical-grade (UMG) silicon. Owing to its low purity, UMG silicon often requires special steps to minimize the impurity effects and to remove or segregate the metal atoms in the bulk and to remove interfacial defects such as precipitates and grain boundaries. A process often called the 'gettering process' is used with phosphorus diffusion in this experiment in an effort to improve the performance of silicon solar cells using UMG silicon. The phosphorous gettering processes were optimized and compared to the standard POCl process so as to increase the minority carrier lifetime(MCLT) with the duration time and temperature as variables. In order to analyze the metal impurity concentration and distribution, secondary ion mass spectroscopy (SIMS) was utilized before and after the phosphorous gettering process.