• JSTS:Journal of Semiconductor Technology and Science
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• v.13 no.5
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• pp.492-499
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• 2013

We have investigated the electrical properties of Ru/Ni/n-GaN Schottky structure using current-voltage (I-V) and capacitance-voltage (C-V) measurements at room temperature. The barrier height (${\Phi}_{bo}$) and ideality factor (n) of Ru/Ni/n-GaN Schottky structure are found to be 0.66 eV and 1.44, respectively. The ${\Phi}_{bo}$ and the series resistance ($R_S$) obtained from Cheung's method are compared with modified Norde's method, and it is seen that there is a good agreement with each other. The energy distribution of interface state density ($N_{SS}$) is determined from the I-V measurements by taking into account the bias dependence of the effective barrier height. Further, the interface state density $N_{SS}$ as determined by Terman's method is found to be $2.14{\times}10^{12}\;cm^{-2}\;eV^{-1}$ for the Ru/Ni/n-GaN diode. Results show that the interface state density and series resistance has a significant effect on the electrical characteristics of studied diode.

• 전기의세계
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• v.26 no.6
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• pp.86-92
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• 1977

The phenomenon of non-steady-state current flow through the interface traps during the dielectric relaxation of MOS device is presented. Experimental method is also described for determining the energy distribution of interface traps, which is based on isothermal dielectric relaxation current technique. Actually, the energy distribution of interface traps was obtained by measuring the transient current through the traps at Si-SiO$_{2}$ interface only in lower-half of the bandgap. It is shown that the trap energy distributio has peak value 1.72*10$^{13}$ cm$^{-2}$ eV$^{-1}$ near 0.73eV approximately.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.29 no.1 s.232
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• pp.159-168
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• 2005

In recent studies, it was reported that there existed the temperature discontinuity at a liquid-vapor interface in an equilibrium state. However, from the viewpoint of the classical thermodynamics, it is highly questionable result although considering that the experiments related with a boundary layer is very difficult due to the extremely thin thickness of it. To clarify whether the temperature discontinuity over a liquid-vapor interface really exists, the computer simulations were performed. From the simulation results, it could be concluded that the misconception in a temperature calculation might result in non-uniform temperature distributions over an interface under an equilibrium state.

• Structural Engineering and Mechanics
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• v.5 no.6
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• pp.817-837
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• 1997

In the present contribution an interface crack model is introduced which is capable of modelling crack initialisation and growth in aluminium as well as in Fibre Metal Laminates. Interface elements are inserted in a finite element mesh with a yield function which bounds all states of stress in the interface. Hardening occurs after a state of stress exceeds the yield stress of the material. The hardening branch is bounded by the ultimate stress of the material. Thereafter, the state of stress is reduced to zero while the inelastic deformations grow. The energy dissipated by the inelastic deformations in this process equals the fracture energy of the material. The model is applied to calculate the onset and growth of cracking in centre cracked plates made of aluminium and GLARE$^{(R)}$. The impact of the model parameters on the performance of the crack model is studied by comparisons of the numerical results with experimental data.

• Proceedings of the Optical Society of Korea Conference
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• 1989.02a
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• pp.242-249
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• 1989

• Structural Engineering and Mechanics
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• v.34 no.6
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• pp.667-683
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• 2010

A mathematical model and its analytic solution for the analysis of stress-strain state of a linear elastic two-layer beam is presented. The model considers both slip and uplift at the interface. The solution is employed in assessing the effects of transverse and shear contact stiffnesses and the thickness of the interface layer on behaviour of nailed, two-layer timber beams. The analysis shows that the transverse contact stiffness and the thickness of the interface layer have only a minor influence on the stress-strain state in the beam and can safely be neglected in a serviceability limit state design.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.143.1-143.1
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• 2016

Ge is a promising candidate to replace Si in MOSFET because of its superior carrier mobility, particular that of the hole. However Ge oxide is thermodynamically unstable. At elevated temperature, GeO is formed at the interface of Ge and GeO2, and its formation increases the interface defect density, degrading its device performance. In search for a method to surmount the problem, we investigated Ge oxidation through an inert capped oxide layer. For this work, we prepared low doped n-type Ge(100) wafer by removing native oxide and depositing a capping layer, and show that GeO2 interface can be successfully grown through the capping layer by thermal oxidation in a furnace. The thickness and quality of thus grown GeO2 interface was examined by ellipsometry, XPS, and AFM, along with I-V and C-V measurements performed at 100K to 300K. We will present the result of our investigation, and provide the discussion on the oxide growth rate, interface state density and electrical characteristics in comparison with other studies using the direct oxidation method.

• Geomechanics and Engineering
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• v.11 no.3
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• pp.361-372
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• 2016

The soil-concrete interface shear strength, although has been extensively studied, is still difficult to predict as a result of the dependence on many factors such as normal stresses, surface roughness, particle sizes, moisture contents, dilation angles of soils, etc. In this study, a well-known rigorous statistical learning approach, namely the least squares support vector machine (LS-SVM) realized in a ubiquitous spreadsheet platform is firstly used in estimating the soil-structure interface shear strength. Instead of studying the complicated mechanism, LS-SVM enables to explore the possible link between the fundamental factors and the interface shear strengths, via a sophisticated statistic approach. As a preliminary investigation, the authors study the expansive soils that are found extensively in most countries. To reduce the complexity, three major influential factors, e.g., initial moisture contents, initial dry densities and normal stresses of soils are taken into account in developing the LS-SVM models for the soil-concrete interface shear strengths. The predicted results by LS-SVM show reasonably good agreement with experimental data from direct shear tests.

• Computers and Concrete
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• v.14 no.1
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• pp.91-107
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• 2014

Using the principle of damage mechanics, zero-thickness pore pressure cohesive elements (PPCE) are used to simulate the casing-cement interface (CCI) and cement-rock interface (CRI). The traction-separation law describes the emergence and propagation of the PPCE. Mohr-coulomb criteria determines the elastic and plastic condition of cement sheath and rock. The finite element model (FEM) of delamination fractures emergence and propagation along the casing-cement-rock (CCR) interfaces during hydraulic fracturing is established, and the emergence and propagation of fractures along the wellbore axial and circumferential direction are simulated. Regadless of the perforation angle (the angle between the perforation and the max. horizontal principle stress), mirco-annulus will be produced alonge the wellbore circumferential direction when the cementation strength of the CCI and the CRI is less than the rock tensile strength; the delamination fractures are hard to propagate along the horizontal wellbore axial direction; emergence and propagation of delamination fractures are most likely produced on the shallow formation when the in-situ stresses are lower; the failure mode of cement sheath in the deep well is mainly interfaces seperation and body damange caused by cement expansion and contraction, or pressure testing and well shut-in operations.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.128.1-128.1
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• 2016

Nitrided-metal gates on the high-${\kappa}$ dielectric material are widely studied because of their use for sub-20nm semiconductor devices and the academic interest for the evanescent states at the Si/insulator interface. Issues in these systems with the Si substrate are the electron mobility degradation and the reliability problems caused from N defects that permeates between the Si and the $SiO_2$ buffer layer interface from the nitrided-gate during the gate deposition process. Previous studies proposed the N defect structures with the gap states at the Si band gap region. However, recent experimental data shows the possibility of the most stable structure without any N defect state between the bulk Si valence band maximum (VBM) and conduction band minimum (CBM). In this talk, we present a new type of the N defect structure and the electronic structure of the proposed structure by using the first-principles calculation. We find that the pair structure of N atoms at the $Si/SiO_2$ interface has the lowest energy among the structures considered. In the electronic structure, the N pair changes the eigenvalue of the silicon-induced gap state (SIGS) that is spatially localized at the interface and energetically located just above the bulk VBM. With increase of the number of N defects, the SIGS gradually disappears in the bulk Si gap region, as a result, the system gap is increased by the N defect. We find that the SIGS shift with the N defect mainly originates from the change of the kinetic energy part of the eigenstate by the reduction of the SIGS modulation for the incorporated N defect.