• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.21-21
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• 2003

To increase the light-emission efficiency of LED, we increased the internal and external quantum efficiency by suppressing the defect formation in the quantum well and by increasing the light extraction efficiency in LED, respectively. First, the internal quantum efficiency was improved by investigating the effect of a low temperature (LT) grown p-GaN layer on the In$\sub$0.25/GaN/GaN MQW in green LED. The properties of p-GaN was optimized at a low growth temperature of 900oC. A green LED using the optimized LT p-type GaN clearly showed the elimination of blue-shift which is originated by the MQW damage due to the high temperature growth process. This result was attributed to the suppression of indium inter-diffusion in MQW layer as evidenced by XRD and HR-TEM analysis. Secondly, we improved the light-extraction efficiency of LED. In spite of high internal quantum efficiency of GaN-based LED, the external quantum efficiency is still low due to the total internal reflection of the light at the semiconductor-air interface. To improve the probability of escaping the photons outside from the LED structure, we fabricated nano-sized cavities on a p-GaN surface utilizing Pt self-assembled metal clusters as an etch mask. Electroluminescence measurement showed that the relative optical output power was increased up to 80% compared to that of LED without nano-sized cavities. I-V measurement also showed that the electrical performance was improved. The enhanced LED performance was attributed to the enhancement of light escaping probability and the decrease of resistance due to the increase in contact area.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.4
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• pp.199-202
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• 2014

The effect of neutron irradiation on the properties of SiC Schottky Diode has been investigated. SiC Schottky diodes were irradiated under neutron fluences and compared to the reference samples to study the radiation-induced changes in device properties. The condition of neutron irradiation was $3.1{\times}10^{10}$ $n/cm^2$. The current density after irradiation decreased from 12.7 to 0.75 $A/cm^2$. Also, a slight positive shift (${\Delta}V_{th}$= 0.15 V) in threshold voltage from 0.53 to 0.68 V and a positive change (${\Delta}{\Phi}_B$= 0.16 eV) of barrier height from 0.89 to 1.05 eV have been observed by the neutron irradiation, which is attributed to charge damage in the interface between the metal and the SiC layer.

• Advances in materials Research
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• v.8 no.4
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• pp.295-311
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• 2019

In this study, a three-dimensional Finite Element Model has been developed to estimate the size of the weakened zone in a bi-material a ceramic bonded to metal. The calculations results were compared to those obtained using Scanning Electron Microscope (SEM). In the case of elastic-plastic behaviour of the structure, it has been shown that the simulation results are coherent with the experimental findings. This indicates that Finite Element modeling allows an accurate prediction and estimation of the weakening effect of residual stresses on the bonding interface of Alumina. The obtained results show us that the three-dimensional numerical simulation used by the Finite Element Method, allows a good prediction of the weakened zone extent of a ceramic, which is bonded with a metal.

• Geomechanics and Engineering
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• v.16 no.1
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• pp.49-58
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• 2018

Open-mode cracks could be commonly observed in layered rocks. A concept model is firstly used to explore the mechanism of the vertical cracks (VCs) in the top layer. Then the crack behaviour of the two-layer model is simulated based on a cohesive zone model (CZM) for layer interfaces and a plastic-damage model for rocks. The model indicates that the tensile stress normal to the VCs changes to compression if the crack spacing to layer thickness ratio is lower than a threshold. The results indicate that there is a threshold for interfacial shear strength that controls the crack patterns of the layered system. If the shear strength is lower than the threshold, the top layer is meshed by the VCs and interfacial cracks (ICs). When the shear strength is higher than the threshold, the top layer is meshed by the VCs and parallel cracks (PCs). If the shear strength is comparative to the threshold, a combining pattern of VCs, PCs and ICs for the top layer can be formed. The evolutions of stress distribution in the crack-bound block indicate that the ICs and PCs can reduce the load transferred for the substrate layer, and thus leads to a crack saturation state.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.8
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• pp.42-48
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• 1993

Ar ions were implanted at 1 MeV into (100)Cz Si wafers with dose of 1 * 10$^{15}$ ions/cm$^{2}$. Damage induced by high energy implantation and its annealing behavior during rapid thermal annealing for 10sec at temperatures from 550 to 1100${\circ}C$ were investigated by crosssection transmission electron microscopy study. It can be clearly seen from the observation that the SPE(Solid Phase Epitaxy) regrowth of the buried amorphous layer induced by ion implantation proceeds from both upper and lower amorphous/crystalline (a/c) interfaces, and the activation energy for SPE from interfaces were both 1.43eV. Misfit dislocation where two interfaces met was formed and it coalesced into the hair pin dislocation in the upper regrown region. At the higher temperature after annealing out of the misfit dislocation, hair pin dislocations showed considerable drop in its bandwidth. However, they were not disappeared even at the temperature 1100${\circ}C$ with the end of range dislocation loops which were formed at the original lower a/c interface.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.83-83
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• 2008

Metal-oxide-silicon-on-insulator (MOSOI) structures were fabricated to study the effect caused by reactive ion etching (RIE) and sacrificial oxidation process on silicon-on-insulator (SOI) layer. The MOSOI capacitors with an etch-damaged SOI layer were characterized by capacitance-voltage (C-V) measurements and compared to the sacrificial oxidation treated samples and the reference samples without etching treatment. The measured C-V curves were compared to the numerical results from 2-dimensional (2-D) simulations. The measurements revealed that the profile of C-V curves significantly changes depending on the SOI surface condition of the MOSOI capacitors. The shift in the measured C-V curves, due to the difference of the fixed oxide charge ($Q_f$), together with the numerical simulation analysis and atomic force microscopy (AFM) analysis, allowed extracting the fixed oxide charges ($Q_f$) in the structures as well as 2-D carrier distribution profiles.

• 한국전산유체공학회:학술대회논문집
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• 2007.10a
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• pp.187-193
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• 2007

The flight vehicles have cavities such as wheel wells and bomb bays. The flow around a cavity is characterized as unsteady flow because of the formation and dissipation of vortices due to the interaction between the freestream shear layer and cavity internal flow, the generation of shock and expansion waves. Resonance phenomena can damage the structures around the cavity and negatively affect aerodynamic performance and stability. In the present study, numerical analysis was performed for cavity flows by the unsteady compressible three dimensional Reynolds-Averaged Navier-Stokes (RANS) equations with Wilcox's ${\kappa}\;-\;{\omega}$ turbulence model. The cavity has the aspect ratios of 2.5, 3.5 and 4.5 for two-dimensional case, same aspect ratios with the W/D ratio of 2 for three-dimensional case. The Mach and Reynolds numbers are 0.53 and 1,600,000 respectively. The flow field is observed to oscillate in the "shear layer mode" with a feedback mechanism. Based on the SPL(Sound Pressure Level) analysis of the pressure variation at the cavity trailing edge, the dominant frequency was analyzed and compared with the results of Rossiter's formula. The MPI(Message Passing Interface) parallelized code was used for calculations by PC-cluster.

• Journal of Digital Contents Society
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• v.9 no.4
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• pp.707-715
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• 2008

The ocean ecosystem and the marine farms were damaged after latest oil spill in Taean. They suffered heavily due to the expansion of the red tide on the coast and the sudden changes in water temperature. We should develop the way to deal with various factors to reduce the damage. In this paper, real time data with which are supplied us through many kinds of sensors on measure equipments will be processed to the visualized shape. Simple numeric data and 2D graph will be changed 2D or 3D graphic objects and animations using WPF, a new effect method in user interface area. This visualization system for environmental data shows us various pictures and offers multimedia data communication.

• Transactions of the Korean Society of Pressure Vessels and Piping
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• v.11 no.1
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• pp.74-78
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• 2015

Nuclear power plant steam generator that is one of the main component has several thousands of thin tubes. And the steam generator tube is subject to damage because of the severe operation conditions such as the high temperature and pressure. Therefore periodic inspections are conducted to ensure the integrity of steam generator component. Hanul unit 3 also has been inspected in accordance with in-service inspection program and is scheduled to be replaced for exceeding the plugging rate which was recommended by manufacturer. During the steam generator replacement activity, we found several clustered porosity on inner surface of main feed water pipe. Additionally crack-like indications were found at weld interface between base material and weld of main feed water pipe. This paper describes the field experience and visual testing results for inner surface of main feed water pipes. The destructive test result had shown that these indications were porosities which were caused by manufacturing process not by operation service.

• Journal of the Korean institute of surface engineering
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• v.32 no.4
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• pp.496-502
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• 1999

Electroplating of Ag and Au on the functional area of lead frames are required for good bonding ability in IC packaging. As the patterns of the lead frame become finer, development of new deposition technology has been required for solving problems associated with process control for uniform thickness on selected area. Sputtering was employed to investigate the adhesion between substrate Alloy42 and Ag film as a new candidate process alternative to conventional electroplating. Coating thickness of Ag film was controlled to 3.5$\mu\textrm{m}$ at room temperature as a reference. The deposition of film was optimized to ensure the adhesion by process parameters of substrate heating temperature at $100~300^{\circ}C$, sputter etching time at -300V for 10~30min, bias voltage of -100~-500V, and existence of Cr interlayer film of $500\AA$. The critical $load L_{c}$ /, defined as the minimum load at which initial damage occurs, was the highest up to 29N at bias voltage of -500V by scratch test. AFM surface image and AES depth profile were investigated to analyze the interface. The effect of bias voltage in sputtering was to improve the surface roughness and remove the oxide on Alloy42.