• Title/Summary/Keyword: interface charge

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Studies on the Electrical Properties of Semiconducting $BaTiO_3$ by Changing Sintering Atmosphere (분위기 변화에 따른 반도성 $BaTiO_3$ 전기적 특성 연구)

  • 최기영;한응학;박순자
    • Journal of the Korean Ceramic Society
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    • v.28 no.3
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    • pp.179-188
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    • 1991
  • The semiconducting BaTiO3 ceramics used in this study were sintered in the reducing atomosphere(hydrogen gas) and neutral atmosphere(nitrogen gas), then were heat-treated in air to vary defect concentrations. In this experiment, the correlations between the composition analysis and electrical characteristics of these samples were investigated. When the BaTiO3 ceramics were sintered in N2 atmosphere, it was observed that the Ba contents near the interface were lower than that of the grain center, and these samples showed superior PTCR effects. From analysis of the resistivities of grains and grain boundaries by CIRM(Complex Impedance Resonance Method), it was confirmed that the PTCR effects were caused by the resistivity of grain boundaries. And from measurement of the capacitance at each temperature, the samples sintered in N2 atmosphere show the increase of room temperature resistance and the decrease of capacitance as a result of the increase of the charge depletion layers. This phenomenon agrees well with the cation deficiencies in the analytical results.

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Enhancing Gas Response Characteristics of Mixed Metal Oxide Gas Sensors

  • Balamurugan, Chandran;Song, Sun-Ju;Kim, Ho-Sung
    • Journal of the Korean Ceramic Society
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    • v.55 no.1
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    • pp.1-20
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    • 2018
  • Semiconducting nanomaterials have attracted considerable interest in recent years due to their high sensitivity, selectivity, and fast response time. In addition, for portable applications, they have low power consumption, lightweight, simple in operation, a low maintenance cost. Furthermore, it is easy to manufacture microelectronic sensor structures with metallic oxide sensitive thin layers. The use of semiconducting metal oxides to develop highly sensitive chemiresistive sensing systems remains an important scientific challenge in the field of gas sensing. According to the sensing mechanisms of gas sensors, the overall sensor conductance is determined by surface reactions and the charge transfer processes between the adsorbed species and the sensing material. The primary goal of the present study is to explore the possibility of using semiconducting mixed metal oxide nanostructure as a potential sensor material for selective gases.

Hole Transfer Layer p-doped with a Metal Oxide for Low Voltage Operation of OLEDs

  • Shin, Won-Ju;Lee, Je-Yun;Kim, Jae-Chang;Yoon, Tae-Hoon;Kim, Tae-Shick;Song, Ok-Keun
    • 한국정보디스플레이학회:학술대회논문집
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    • 2007.08a
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    • pp.435-438
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    • 2007
  • $V_{2}O_{5}$ was tested as a p-dopant for lower operating voltage and higher stability of OLEDs. Low voltage and high stability were achieved using this doping layer. It can be separated to bulk and interface contributions and the latter is a more dominant factor both of operation voltage and stability.

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Development of data acquisition and analysis program modules for leakage current of polymeric insulators using the Labview software (Labview를 이용한 배전용 폴리머애자의 누설전류 측정 및 분석 프로그램 개발)

  • Cho, Seong-Soo;Han, Sang-Ok
    • Proceedings of the KIEE Conference
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    • 2000.07c
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    • pp.1969-1971
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    • 2000
  • This paper presents a data acquisition and analysis program modules that has been developed using the Labview program. These program modules can use to acquire and analyze leakage current data of insulator under different contamination conditions. The experimental hardware made up salt fog chamber, AC/DC power supply, transducer (shunt resistor), measurement devices and PC with the GPIB (General Purpose Interface Bus). And analysis program modules can calculate pulse level count, accumulated charge, average leakage current, power spectrum, and harmonics. The result of applying these analytical program modules to polymeric insulator is available for evaluation of leakage current characteristic of outdoor insulators.

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Study of Back-Up Electric Power Source as a Role for Instant Power Industry Safety by Super Capacitor (순간 정전시 산업안전용 보조전원 역할의 Super Capacitor에 관한 연구)

  • 김상길;김종철;허진우;김경민;이용욱;강안수
    • Proceedings of the Safety Management and Science Conference
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    • 1999.11a
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    • pp.345-354
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    • 1999
  • A new type of capacitor named "Super Capacitor" has been developed, in which the properties of electric double layer formed at the interface of activated carbon electrode- liquid organic electrolyte is applied. This capacitor is small In size, light in weight, wide In temperature range(-25~$70^{\circ}C$), large in charge-discharge capability and good in voltage preservation. And this super capacitor is applied as a power back-up for electricity failure in volatile memory devices etc., a power source for a short time and a power source for operating actuators. At present the development of high power back-up types of the capacitor system and improvement of their characteristics are being actively conducted in order to find wider applications.lications.

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Effects of Electrical Stress on Polysilicon TFTs with Hydrogen Passivation (다결정 실리콘 박막 트랜지스터의 수소화에 따른 전기적 스트레스의 영향)

  • Hwang, Seong-Su;Hwang, Han-Uk;Kim, Yong-Sang
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.48 no.5
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    • pp.367-372
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    • 1999
  • We have investigated the effects of electrical stress on poly-Si TFTs with different hydrogen passivation conditions. The amounts of threshod voltage shift of hydrogen passivated poly-Si TFTs are much larger than those of as-fabricated devices both under the gate only and the gate and drain bias stressing. Also, we have quantitatively analyzed the degradation phenomena by analytical method. We have suggested that the electron trapping in the gate dielectric is the dominant degradation mechanism in only gate bias stressed poly-Si TFT while the creation of defects in the channel region and $poly-Si/SiO_2$ interface is prevalent in gate and drain bias stressed device.

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Preparation of Ru-C Nano-composite Film by MOCVD and Electrode Properties for Oxygen Gas Sensor

  • Kimura, Teiichi;Goto, Takashi
    • Proceedings of the Korean Powder Metallurgy Institute Conference
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    • 2006.09a
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    • pp.358-359
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    • 2006
  • Ru-C nano-composite films were prepared by MOCVD, and their microstructures and their electrode properties for oxygen gas sensors were investigated. Deposited films contained Ru particles of 5-20 nm in diameter dispersed in amorphous C matrix. The AC conductivities associating to the interface charge transfer between Ru-C composite electrode and YSZ electrolyte were 100-1000 times higher than that of conventional paste-Pt electrodes. The emf values of the oxygen gas concentration cell constructed from the nano-composite electrodes and YSZ electrolyte showed the Nernstian theoretical values at low temperatures around 500 K. The response time of the concentration cell was 900 s at 500 K.

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Ionic-to-Metallic Layer Transition in Cs Adsorption on Si(111)-(7$\times$7). Charge-State Selective Detection of Adsorbate by Cs+ Reactive Ion Scattering.

  • Han, Seung-Jin;Park, Sung-Chan;Kang, Heon
    • Proceedings of the Korean Vacuum Society Conference
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    • 2000.02a
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    • pp.155-155
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    • 2000
  • Adsorption of alkali metals on a silicon surface has attracted much attention due to its importance in metal-semiconductor interface technology, In particular, the bonding nature of alkali metal to silicon substrate has been a focus of fundamental research efforts. We examined the adsorbed layer of Cs on a Si(111)-(7$\times$) surface by reactive ion scattering (RIS) of hyperthermal Cs+ beams. RIS from a Cs-adsorbed surface gives rise to Cs, representing pickup of surface Cs by Cs projectile. The Cs intensity is proportional to surface coverage of Cs at a high substrate temperature (473 K), while it varies anomalously with Cs coverage at low temperatures (130-170 K). This observation indicates that RIS selectively detects metallic Cs on surface, but discriminates ionic Cs. Transition from ionic to metallic Cs adlayer is driven by thermal diffusion of Cs and their clustering process.

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Epitaxial Growth of $Y_2O_3$ films by Ion Beam Assisted Deposition

  • Whang, C.N.
    • Proceedings of the Korean Vacuum Society Conference
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    • 2000.02a
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    • pp.26-26
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    • 2000
  • High quality epitaxial Y2O3 thin films were prepared on Si(111) and (001) substaretes by using ion beam assisted deposition. As a substrate, clean and chemically oxidized Si wafers were used and the effects of surface state on the film crystallinity were investigated. The crystalline quality of the films were estimated by x-ray scattering, rutherford backscattering spectroscopy/channeling, and high-resolution transmission electron microscopy (HRTEM). The interaction between Y and Si atoms interfere the nucleation of Y2O3 at the initial growth stage, it could be suppressed by the interface SiO2 layer. Therefore, SiO2 layer of the 4-6 layers, which have been known for hindering the crystal growth, could rather enhance the nucleation of the Y2O3 , and the high quality epitaxial film could be grown successfully. Electrical properties of Y2O3 films on Si(001) were measured by C-V and I-V, which revealed that the oxide trap charge density of the film was 1.8$\times$10-8C/$\textrm{cm}^2$ and the breakdown field strength was about 10MV/cm.

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Study of supersonic flame acceleration within AN-based high explosive containing various gap materials (AN계열 화약의 다양한 Gap 실험을 통한 초음속 화염 전파 특성 연구)

  • Lee, Jin-Wook;Yoh, Jai-Ick
    • Proceedings of the Korean Society of Propulsion Engineers Conference
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    • 2012.05a
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    • pp.342-349
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    • 2012
  • We study the gap effect on detonating high explosives using the characteristic acoustic impedance theory and numerical simulation. A block of charge embedded with multiple gap inserts is detonated at one end to understand the ensuing flame propagation through multiple gap materials. The present high-order multimaterial simulation provides meaningful validation of complex interface tracking algorithm as it is implemented in the SNU-Hydropack code.

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