• Experimental Neurobiology
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• 제26권5호
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• pp.241-251
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• 2017

Saturation mutagenesis was performed on a single position in the voltage-sensing domain (VSD) of a genetically encoded voltage indicator (GEVI). The VSD consists of four transmembrane helixes designated S1-S4. The V220 position located near the plasma membrane/extracellular interface had previously been shown to affect the voltage range of the optical signal. Introduction of polar amino acids at this position reduced the voltage-dependent optical signal of the GEVI. Negatively charged amino acids slightly reduced the optical signal by 33 percent while positively charge amino acids at this position reduced the optical signal by 80%. Surprisingly, the range of V220D was similar to that of V220K with shifted optical responses towards negative potentials. In contrast, the V220E mutant mirrored the responses of the V220R mutation suggesting that the length of the side chain plays in role in determining the voltage range of the GEVI. Charged mutations at the 219 position all behaved similarly slightly shifting the optical response to more negative potentials. Charged mutations to the 221 position behaved erratically suggesting interactions with the plasma membrane and/or other amino acids in the VSD. Introduction of bulky amino acids at the V220 position increased the range of the optical response to include hyperpolarizing signals. Combining The V220W mutant with the R217Q mutation resulted in a probe that reduced the depolarizing signal and enhanced the hyperpolarizing signal which may lead to GEVIs that only report neuronal inhibition.

• 한국전기전자재료학회논문지
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• 제32권1호
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• pp.70-77
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• 2019

$SiO_x$ nanoparticles were granulated, and their microstructures and effects on electrochemical behaviors were investigated. In spite of the promising electrochemical performance of $SiO_x$, nanoparticles have limitations such as high surface area, low density, and difficulty in handling during slurry processing. Granulation can be one solution. In this study, pelletizing and annealing were conducted to create particles with sizes of several decades of micron. Decrease in surface area directly influences the initial charge and discharge process when granules are applied as anode materials for Li-ion batteries. Lower surface area is key to decreasing the amount of irreversible phase-formation, such as $Li_2Si_2O_5$, $Li_2SiO_3$ and $Li_4SiO_4$, as well as forming the solid electrolyte interface. Additionally, aggregation of nanoparticles is required to obtain further enhancement of the electrochemical behavior due to restrictions that there be no $Li_4SiO_4$-related reaction during the first discharge process.

• 전기전자학회논문지
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• 제22권4호
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• pp.1230-1233
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• 2018

에어로졸 데포지션 (aerosol deposition)공정을 통해 $Al_2O_3$막을 4H-SiC 상에 50 nm 두께로 제조하였고, 후열처리 공정에 따른 전기적 특성을 분석하였다. 그 결과 $N_2$분위기 열처리 시 $Al_2O_3$와 SiC 계면의 고정전하량이 감소하였으나 산소공공 생성에 의한 누설전류의 증가를 확인하였다. 본 결과로부터 계면특성 향상과 누설전류의 감소를 위해서는 적절한 $N_2$와 $O_2$가스의 혼합이 중요함을 확인하였다.

• Korean Chemical Engineering Research
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• 제60권1호
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• pp.62-69
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• 2022

그래핀은 부피에 비해 표면적이 넓고 뛰어난 기계적 물성과 전기전도성을 가지며 생체적합성이 우수하다. 본 연구에서는 전기화학적 방법을 이용하여 indium tin oxide (ITO) 글래스 슬라이드 표면에 산화그래핀을 증착·환원시킨 전극을 제작하였고 그래핀으로 표면 개질된 ITO의 전기화학적 특성을 조사하였다. 산화그래핀의 증착과 환원에 순환전압전류법을 사용하였다. 주사전자현미경과 에너지 분산형 X-선 분광법을 사용하여 그래핀이 코팅된 ITO 표면을 관찰하였다. 순환전압전류법과 전기화학 임피던스 분광법을 사용하여 제작된 전극들의 전기화학 특성을 평가하였다. 사이클 수와 주사 속도는 산화그래핀 증착과 환원도에 상당한 영향을 미쳤으며 제작된 전극의 전기화학 특성도 달랐다. ITO 전극에 비하여 그래핀으로 표면 개질된 ITO는 전극 계면에서의 전하 전달 저항이 낮았고 더 많은 전류를 생산하였다. 그래핀으로 표면 개질된 ITO 표면에 고정화된 포도당 산화효소는 포도당을 산화시키며 성공적으로 전자들을 생성하였다.

• 한국항행학회논문지
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• 제26권5호
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• pp.358-364
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• 2022

항공용 인터콤 시스템은 정/부조종사 간 내부 통화 및 조종사와 승무원 간 내부 통화, 초고주파 무전기(U/VHF)와 같은 통신 장비를 통한 외부 통화, 초단파전방향거리탐지기/계기착륙장치(VOR/ILS), 전술 항법 장치(TACAN)와 같은 항법 및 임무 장비 오디오 신호 모니터링, 비행 데이터기록장치(FDR) 및 자료전송 시스템(DTS)으로의 음성 녹음용 오디오 신호 출력, 항공기의 상태와 위협 등에 대한 오디오 경고음/경고 음성 발생 등 항공기 내의 모든 음성 신호에 대한 처리를 담당하는 장비이다. 이러한 항공용 인터콤은 아날로그 오디오 신호의 경우 노이즈에 민감하기 때문에 조종사 및 승무원의 임무 수행을 위해 항공기 내/외부의 전자파 노이즈로부터 오디오 신호를 보호할 수 있는 이중화 설계가 필요하다. 본 논문에서는 항공용 디지털 인터콤의 이중화를 위한 정상/백업 운용모드 및 디지털 방식의 이중화 설계 방안과 제작 및 검증 결과에 대하여 기술한다.

• 센서학회지
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• 제30권4호
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• pp.191-195
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• 2021

Pure ZnFe₂O₄ and Fe₂O₃-ZnFe₂O₄ hetero-composite spheres were prepared by ultrasonic spray pyrolysis of a solution containing Zn- and Fe-nitrates. Additionally, the sensing characteristics of these spheres in the presence of 5 ppm ethanol, benzene, p-xylene, toluene, and CO (within the temperature range of 275-350 ℃) were investigated. The Fe₂O₃-ZnFe₂O₄ hetero-composite sensor with a cation ratio of [Zn]:[Fe]=1:3 exhibited a high response (resistance ratio = 140.2) and selectivity (response to p-xylene/response to ethanol = 3.4) to 5 ppm p-xylene at 300 ℃, whereas the pure ZnFe₂O₄ sensor showed a comparatively lower gas response and selectivity. The reasons for the superior response and selectivity to p-xylene in Fe₂O₃-ZnFe₂O₄ hetero-composite sensor were discussed in relation to the electronic sensitization due to charge transfer at Fe₂O₃-ZnFe₂O₄ interface and Fe₂O₃-induced catalytic promotion of gas sensing reaction. The sensor can be used to monitor harmful volatile organic compounds and indoor air pollutants.

• 반도체디스플레이기술학회지
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• 제22권1호
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• pp.28-32
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• 2023

Recently, the use of stable lithium nanostructures as substrates and electrodes for secondary batteries can be a fundamental alternative to the development of next-generation system semiconductor devices. However, lithium structures pose safety concerns by severely limiting battery life due to the growth of Li dendrites during rapid charge/discharge cycles. Also, enabling long cyclability of high-voltage oxide cathodes is a persistent challenge for all-solid-state batteries, largely because of their poor interfacial stabilities against oxide solid electrolytes. For the development of next-generation system semiconductor devices, solid electrolyte nanostructures, which are used in high-density micro-energy storage devices and avoid the instability of liquid electrolytes, can be promising alternatives for next-generation batteries. Nevertheless, poor lithium ion conductivity and structural defects at room temperature have been pointed out as limitations. In this study, a low-dimensional Graphene Oxide (GO) structure was applied to demonstrate stable operation characteristics based on Li+ ion conductivity and excellent electrochemical performance. The low-dimensional structure of GO-based solid electrolytes can provide an important strategy for stable scalable solid-state power system semiconductor applications at room temperature. The device using uncoated bare NCA delivers a low capacity of 89 mA h g-1, while the cell using GO-coated NCA delivers a high capacity of 158 mA h g−1 and a low polarization. A full Li GO-based device was fabricated to demonstrate the practicality of the modified Li structure using the Li-GO heterointerface. This study promises that the lowdimensional structure of Li-GO can be an effective approach for the stabilization of solid-state power system semiconductor architectures.

• Journal of Electrochemical Science and Technology
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• 제14권2호
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• pp.184-193
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• 2023

This study investigates the effects of a carbon fiber layer formed on the surface of an etched aluminum current collector on the electrochemical properties of the activated carbon electrodes for an electric double layer capacitor. A particle size analyzer, field-emission SEM, and nitrogen adsorption/desorption isotherm analyzer are employed to analyze the structure of the carbon fiber layer. The electric and electrochemical properties of the activated carbon electrodes using a carbon fiber layer are evaluated using an electrode resistance meter and a charge-discharge tester, respectively. To uniformly coat the surface with carbon fiber, we applied a planetary mill process, adjusted the particle size, and prepared the carbon paste by dispersing in a binder. Subsequently, the carbon paste was coated on the surface of the etched aluminum current collector to form the carbon under layer, after which an activated carbon slurry was coated to form the electrodes. Based on the results, the interface resistance of the EDLC cell made of the current collector with the carbon fiber layer was reduced compared to the cell using the pristine current collector. The interfacial resistance decreased from 0.0143 Ω·cm² to a maximum of 0.0077 Ω·cm². And degradation reactions of the activated carbon electrodes are suppressed in the 3.3 V floating test. We infer that it is because the improved electric network of the carbon fiber layer coated on the current collector surface enhanced the electron collection and interfacial diffusion while protecting the surface of the cathode etched aluminum; thereby suppressing the formation of Al-F compounds.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.23-23
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• 2009

GaN-based nitride semiconductors have attracted considerable attention in high-brightness light-emitting-diodes (LEDs) and laser diodes (LDs) covering from green to ultraviolet spectral range. LED and LD heterostructures are usually grown on (0001)-$Al_2O_3$. The large lattice mismatch between $Al_2O_3$ substrates and the GaN layers leads to a high density of defects(dislocations and stacking faults). Moreover, Ga and N atoms are arranged along the polar [0001] crystallographic direction, which leads to spontaneous polarization. In addition, in the InGaN/GaN MQWs heterostructures, stress applied along the same axis can also give rise to piezoelectric polarization. The total polarization, which is the sum of spontaneous and piezoelectric polarizations, is aligned along the [0001] direction of the wurtzite heterostructures. The change in the total polarization across the heterolayers results in high interface charge densities and spatial separation of the electron and hole wave functions, redshifting the photoluminescence peak and decreasing the peak intensity. The effect of polarization charges in the GaN-based heterostructures can be eliminated by growing along the non-polar [$11\bar{2}0$] (a-axis) or [$1\bar{1}00$] (m-axis) orientation instead of thecommonly used polar [0001] (c-axis). For non-polar GaN growth on non-polar substrates, the GaN films have high density of planar defects (basal stacking fault BSFs, prismatic stacking fault PSFs), because the SFs are formed on the basal plane (c-plane) due to their low formation energy. A significant reduction in defect density was recently achieved by applying blocking layer such as SiN, AlN, and AlGaN in non-polar GaN. In this work, we were performed systematic studies of the defects in the nonpolar GaN by conventional and high-resolution transmission electron microscopy.

• 한국세라믹학회지
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• 제42권4호
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• pp.251-259
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• 2005

혼합전도체 산화물, LSCF의 전극반응점 분포에 따른 분극현상을 관찰하기 위해 다공성 양극의 기공률을 변화시켜가며 분극특성을 관찰하였다. 전극의 기공률을 달리하기 위해 크기가 다른 두 종류의 LSCF 분말들을 혼합비를 달리하여 사용하였으며 GDC 전해질 기판에 스크린 인쇄법을 통해 전극을 구성한 후 반쪽전지 실험을 수행하였다. 제조된 후막전극의 기공률은 화상 분석법을 통해 측정하였으며 전극의 전체 비표면적을 유추하기 위해 2차원 이미지에서의 기공의 둘레 길이를 측정하였다. 교류 임피던스법을 이용해 분극 특성을 관찰한 결과 혼합전도체인 LSCF 양극에서의 전극반응은 i) 양극표면에서 이온화된 산소이온이 전해질과의 삼상계면까지 이동해 오는 단계, ii) 이동해온 산소이온이 양극으로부터 전해질로 전달되는 반응단계에 의해 제어됨을 알 수 있었다. 이러한 양극에서의 분극은 기공률의 증가에 따라 전극 반응에 필요한 활성 표면이 증가됨으로써 줄어드는 것을 알 수 있었다.