• Journal of the Korean Society of Propulsion Engineers
• /
• v.17 no.4
• /
• pp.32-42
• /
• 2013

We study the gap effect on detonating high explosives using numerical simulation. The characteristic acoustic impedance theory is applied to understand the reflection and transmission phenomena associated with gap test of high explosives and solid propellants. A block of charge with embedded multiple gaps is detonated at one end to understand the ensuing detonation propagation through pores and non uniformity of the tested material. A high-order multimaterial simulation provides a meaningful insight into how material interface dynamics affect the ignition response of energetic materials under a shock loading.

• Journal of the Semiconductor & Display Technology
• /
• v.16 no.2
• /
• pp.44-48
• /
• 2017

We explain optical and electrical properties of top and bottom-emission structured alternating-current powder electroluminescent devices (ACPELDs) with Ga-doped ZnO(GZO) transparent electrode. The top-emission ACPELDs were layered as the metal electrode/dielectric layer/emission layer/top transparent electrode and the bottom-emission ACPELDs were structured as the bottom transparent electrode/emission layer/dielectric layer/metal electrode. The yellow-emitting ZnS:Mn, Cu phosphor and the barium titanate dielectric layers were layered through the screen printing method. The GZO transparent electrode was deposited by the sputtering, its sheet resistivity is $275{\Omega}/{\Box}$. The transparency at the yellow EL peak was 98 % for GZO. Regardless of EL structures, EL spectra of ACPELDs were exponentially increased with increasing voltages and they were linearly increased with increasing frequencies. It suggests that the EL mechanism was attributed to the impact ionization by charges injected from the interface between emitting phosphor layer and the transparent electrode. The top-emission structure obtained higher EL intensity than the bottom-structure. In addition, charge densities for sinusoidal applied voltages were measured through Sawyer-Tower method.

• Journal of Electrochemical Science and Technology
• /
• v.13 no.4
• /
• pp.479-485
• /
• 2022

The power of energy storage devices is characterized by capacitance and the internal resistance. The capacitance is measured on an assumption that the charges are stored at the electrode interface and the electric double layer behaves like an ideal capacitor. However, in most cases, the electric double layer is not ideal so a constant phase element (CPE) is used instead of a capacitor to describe the practical observations. Nevertheless, another problem with the use of the CPE is that CPE does not give capacitance directly. Fortunately, a few methods were suggested to evaluate the effective capacitance in the literature. However, those methods may not be suitable for supercapacitors which are modeled as an equivalent circuit of a CPE and resistor connected in series because the time constant of the equivalent circuit is not clearly studied. In this report, in order to study the time constant of the CPE and find its equivalent capacitor, AC and DC methods are utilized in a complementary manner. As a result, the time constants in the AC and DC domains are compared with digital simulation and a proper equation is presented to calculate the effective capacitance of a supercapacitor, which is extended to an electrochemical system where faradaic and ohmic processes are accompanied by imperfect charge accumulation process.

• Journal of Drive and Control
• /
• v.20 no.4
• /
• pp.17-26
• /
• 2023

A forklift is an industrial vehicle that lifts or transports heavy objects using a hydraulically operated fork, and is equipped with an automatic transmission for the convenience of repetitive transportation, loading, and unloading work. The Transmission Control Unit (TCU) is a key component in charge of the shift control function of an automatic transmission. It consists of an electric circuit with an input/output signal interface function and firmware running on a microcontroller. To develop TCU firmware, the development process of shifting algorithm design, firmware programming, verification test, and performance improvement must be repeated. A simulator is a device that simulates a mechanical system having dynamic characteristics in real time and simulates various sensor signals installed in the system. The embedded transmission simulator is a simulator that is embedded in the TCU firmware. information related to the mechanical system that is necessary for TCU normal operation. In this study, an embedded transmission simulator applied to the originally developed forklift TCU firmware was designed and used to verify various forklift shift control algorithms.

• Journal of the Korean Vacuum Society
• /
• v.14 no.2
• /
• pp.91-96
• /
• 2005

The silicon-on-insulator (SOI) wafer fabrication technique has been developed by using ion-cut process, based on proton implantation and wafer bonding techniques. It has been shown by SRIM simulation that 65keV proton implantation is required for a SOI wafer (200nm SOI, 400nm BOX) fabrication. In order to investigate the optimum proton dose and primary annealing condition for wafer splitting, the surface morphologic change has been observed such as blistering and flaking. As a result, effective dose is found to be in the $6\~9\times10^{16}\;H^+/cm^2$ range, and the annealing at $550^{\circ}C$ for 30 minutes is expected to be optimum for wafer splitting. Direct wafer bonding is performed by joining two wafers together after creating hydrophilic surfaces by a modified RCA cleaning, and IR inspection is followed to ensure a void free bonding. The wafer splitting was accomplished by annealing at the predetermined optimum condition, and high temperature annealing was then performed at $1,100^{\circ}C$ for 60 minutes to stabilize the bonding interface. TEM observation revealed no detectable defect at the SOI structure, and the interface trap charge density at the upper interface of the BOX was measured to be low enough to keep 'thermal' quality.

• Journal of the Korea Academia-Industrial cooperation Society
• /
• v.19 no.6
• /
• pp.709-714
• /
• 2018

This study researched the reasons for changing polarity in accordance with junction properties in an interface of semiconductors. The contact properties of semiconductors are related to the effect of the semiconductor's device. Therefore, it is an important factor for understanding the junction characteristics in the semiconductor to increase the efficiency of devices. For generation of various junction properties, carbon-doped silicon oxide (SiOC) was deposited with various argon (Ar) gas flow rates, and the characteristics of the SiOC was varied based on the polarity in accordance with the Ar gas flows. Tin-doped zinc oxide (ZTO) as the conductor was deposited on the SiOC as an insulator to research the conductivity. The properties of the SiOC were determined from the formation of a depletion layer by the ionization reaction with various Ar gas flow rates due to the plasma energy. Schottky contact was good in the condition of the depletion layer, with a high potential barrier between the silicon (Si) wafer and the SiOC. The rate of ionization reactions increased when increasing the Ar gas flow rate, and then the potential barrier of the depletion layer was also increased owing to deficient ions from electron-hole recombination at the junction. The dielectric properties of the depletion layer changed to the properties of an insulator, which is favorable for Schottky contact. When the ZTO was deposited on the SiOC with Schottky contact, the stability of the ZTO was improved by the ionic recombination at the interface between the SiOC and the ZTO. The conductivity of ZTO/SiOC was also increased on SiOC film with ideal Schottky contact, in spite of the decreasing charge carriers. It increases the demand on the Schottky contact to improve the thin semiconductor device, and this study confirmed a high-performance device owing to Schottky contact in a low current system. Finally, the amount of current increased in the device owing to ideal Schottky contact.

• Journal of the Korean Electrochemical Society
• /
• v.1 no.1
• /
• pp.33-39
• /
• 1998

To AC impedance study was performed in this study on the interfacial reaction between organic electrolyte and amorphous tungsten oxides thin film, cathodically coloring oxide, prepared by e-beam evaporation method in the 1 M $LiClO_4/PC$ organic solution. The electrochemical reactions at the interface were analyzed by the transient method and the complex impedance spectroscopy. The impedance spectrums showed that the electro-chemical intercalation of lithium cations was consisted of the following three steps; the first step, the charge transfer reaction of lithium cation at the interface between amorphous tungsten oxides thin film and the organic electrolyte, the second step, the adsorption of lithium atom on the surface of amorphous tungsten oxides thin film, and then the third step, the absorption and the diffusion of lithium atom into amorphous tungsten oxides thin layer. The bleaching and the coloring characteristics of amorphous tungsten oxides thin film were explained in terms of thermodynamic and kinetic variables, the simulated $R_{ct},\;C_{dl},\;D$ and $\sigma_{Li}$ by CNLS fitting method. Especially it was found that the limiting values of electrochromic reaction were the molar ratio of lithium, y=0.167 and the electrode potential, E=2.245 V (vs. Li).

• Journal of Adhesion and Interface
• /
• v.22 no.3
• /
• pp.91-97
• /
• 2021

By introducing an organic interlayer on the Parylene C dielectric surface, the electrical device performances and the operating stabilities of organic field-effect transistors (OFETs) were improved. To achieve this goal, hexamethyldisilazane (HMDS) and octadecyltrichlorosilane (ODTS), as the organic interlayer materials, were used to control the surface energy of the Parylene C dielectrics. For the bare case used with the pristine Parylene C dielectrics, the field-effect mobility (μ_FET) and threshold voltage (V_th) of dinaphtho[2,3-b:2',3'-f ]thieno[3,2-b]- thiophene (DNTT) FET devices were measured at 0.12 cm²V^-1s^-1 and - 5.23 V, respectively. On the other hand, the OFET devices with HMDS- and ODTS-modified cases showed the improved μ_FET values of 0.32 and 0.34 cm²V^-1s^-1, respectively. More important point is that the μ_FET and V_th of the DNTT FET device with the ODTS-modified Parylene C dielectric presented the smallest changes during a repeated measurement of 1000 times, implying that it has the most stable operating stability. The results could be meaned that the organic interlayer, especially ODTS, effectively covers the Parylene C dielectric surface with alkyl chains and reduces the charge trapping at the interface region between active layer and dielectric, thereby improving the electrical operating stability.

• Corrosion Science and Technology
• /
• v.8 no.2
• /
• pp.53-61
• /
• 2009

In this study, both evaluations by visual imaging for exterior view of coating and by EIS were executed for epoxy primer coated specimens deteriorated by accelerated test, and comparison and analysis were carried out for 2 evaluation methods. In the comparison between total damaged area ratio acquired by image processing method and deterioration point, higher deterioration points were appeared for rusted specimens than for non-rusted specimens. It is attributed that deterioration point per unit area ratio given for rust is higher than for peeling. In the comparison between total damaged area ratio and EIS result, impedance of coating was largely decreased as about TEX>$10^4{\Omega}{\cdot}cm^2$ or less when rust area ratio is more than about 0.1%, and blistering area ratio is more than about 3%. Charge transfer resistance ($R_{ct}$) and double layer capacitance ($C_{dl}$) values were appeared for all specimens except 2 ones, which shows that water is accumulated and steel substrate is corroded at coated film-steel interface. In the comparison between deterioration point and EIS result, more than 10 points as deterioration point were given for specimens of below $10^6{\Omega}{\cdot}cm^2$ of impedance at low frequency. For specimens deteriorated by NORSOK cyclic test, impedance was lowest of all, though deterioration point was not high. It is thought to be attributed that coating system and accelerated deterioration condition of cyclic tested specimens were different from those of main specimens. From the result, it is thought that coating resistance can be relatively more decreased than deterioration degree estimated from exterior view under more severe corrosion environment or in the present of more complex deterioration factors.

• Korean Journal of Fisheries and Aquatic Sciences
• /
• v.12 no.2
• /
• pp.95-102
• /
• 1979

Brevibacterium flavum treated with phenol derivatives, guaiacol and o-vanillin has been revealed the marked increased ability in glutamic acid fermentation as 14.2 g/l in o-vanillin treated, 12.5 g/l in guaiacol treated while the 7.0 g/1 in nontreated cell. The increased ability of phenol derivatives treated cells in glutamic acid fermentation was ascribed to the formation of charge-transfer complex between phenols and oxygen. The charge-transfer complex effectively supply the oxygen to the fermention system in spite of high potential gradient in oxygen transfer formed by high cell concentration as insulator on film of air-liquid interface.