• Electrical & Electronic Materials
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• v.8 no.2
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• pp.176-183
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• 1995

The present work is concerned with the switching conduction characteristics of PI LB films in metal insulator metal sandwiches. By applying various DC voltage bias to MIM junctions, conduction characteristics of junctions can be changed between the high-voltage low-current(off) condition, the low-voltage high-current (on) condition and the medium(mid) condition. Switching conduction characteristics can be also observed in MIM junctions employing some aromatic compounds as insulators. Switching conduction characteristics is assumed to be owing to the existence of aromatic rings, space charge in films, impurities on metal-insulator interface, and difference in work functions of base and top electrodes metal. To study the conduction process of on, off, and mid conductions, we measured I-V, d$^{2}$V/d I$^{2}$-V characteristics of junctions with several different top electrodes under various temperatures. Small conductance changes of junctions can be measured by observing the second derivative, d$^{2}$V/dI$^{2}$, of I-V curve. A dynamical technique is used to get the second derivatives. That is, a finite modulation of the current is applied to the junctions and the second harmonic of the voltage is detected.

• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.67.1-67.1
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• 2012

Graphene has attracted much attention for future nanoelectronics due to its superior electrical properties. Owing to its extremely high carrier mobility and controllable carrier density, graphene is a promising material for practical applications, particularly as a channel layer of high-speed FET. Furthermore, the planar form of graphene is compatible with the conventional top-down CMOS fabrication processes and large-scale synthesis by chemical vapor deposition (CVD) process is also feasible. Despite these promising characteristics of graphene, much work must still be done in order to successfully develop graphene FET. One of the key issues is the process technique for gate dielectric formation because the channel mobility of graphene FET is drastically affected by the gate dielectric interface quality. Formation of high quality gate dielectric on graphene is still a challenging. Dirac voltage, the charge neutral point of the device, also strongly depends on gate dielectrics. Another performance killer in graphene FET is source/drain contact resistance, as the contact resistant between metal and graphene S/D is usually one order of magnitude higher than that between metal and silicon S/D. In this presentation, the key issues on graphene-based FET, including organic-inorganic hybrid gate dielectric formation, controlling of Dirac voltage, reduction of source/drain contact resistance, device structure optimization, graphene gate electrode for improvement of gate dielectric reliability, and CVD graphene transfer process issues are addressed.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2013.10a
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• pp.328-331
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• 2013

As digital ecosystem has been rapidly transforming into the mobile based platform, several mobile operating system, which is in charge of user interface with mobile device has been appeared. This research suggest critical factors affecting success and failure of several commercial mobile operating systems from Palm OS appearing in 1996 to main mobile OSs appearing in 2013. For this, we analyse several mobile operating OS cases, elicit factors affecting success and failure of mobile OS, and conduct ID3 based inductive learning analyses based on elicted factors and values in case dataset. Through this, we draw rules in success and failure of mobile OS and suggest strategic implications for the commercial success of mobile OS.

• Bulletin of the Korean Chemical Society
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• v.35 no.2
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• pp.415-418
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• 2014

Phenyltrimethoxysilane (PTMS) was anchored onto the sensitized $TiO_2$ nanoparticles. This insulating molecular layer effectively inhibited the charge recombination at the interface of $TiO_2$/electrolyte in the dye-sensitized solar cells (DSCs) without sacrificing the dye-loading capacity of the nanocrystalline $TiO_2$. DSCs using PTMS-modified $TiO_2$ exhibited a short-circuit current ($J_{SC}$) of $15.9mA/cm^2$, an open-circuit voltage ($V_{OC}$) of 789 mV, and a fill factor (FF) of 68.2%, yielding an overall conversion efficiency (${\eta}$) of 8.55% under $100mW/cm^2$ illumination. The resulting cell efficiency was improved by ~10% as compared with the reference cell.

• Journal of Biomedical Engineering Research
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• v.34 no.1
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• pp.34-39
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• 2013

For the biocompatibility test of implantable devices or for the sensitivity evaluation of biomedical sensors, it is required to understand the mechanism of the protein adsorption and the interaction between the adsorbed proteins and cells. In this study, the adsorption of proteins in a cell culture medium with fetal bovine serum onto an indium tin-oxide electrode was characterized by using linear sweep voltammetry and impedance spectroscopy. We immersed the fabricated ITO electrodes in the culture medium for 30, 60, or 90 min, and then measured the electrochemical properties of electrodes with 10 mM $Fe(CN){_6}^{3-/4-}$ and 0.1 M KCl electrolyte. With an increase of contacting time, the anodic peak current was decreased and the charge transfer resistance was increased. However, both parameters were recovered to the values before contact with the medium after the treatment of Trypsin/Ethylenediaminetetraacetic acid hydrolyzing proteins.

• Journal of the Korea Society for Simulation
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• v.8 no.1
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• pp.1-18
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• 1999

Current CIM systems need to correspond flexibly to the frequent change of demands of the customers and the fast changing informations about the production environment. The demands have brought forth CIM systems developed using object-oriented technology, with reusability, expansibility, and flexibility for the system components. Due to the fact that the OO-CIM system has been developed based on an incomplete data, the constructed system must be implemented to the actual surroundings to see how pertinent it is. Hence, this paper presents an OO-simulator as a means to evaluate the pertinency and the efficiency of the developed CIM system. The OO-simulator can determine the problems likely to occur when a developed CIM system is implemented to the actual site and evaluate the efficiency beforehand. Such properties will decrease the cost of CIM system development and increase the reliability of the system. This paper presents a framework for an OO-simulator composed of a virtual factory component embodying the characteristics of a virtual factory, a connector component for the interface between the CIM system and the simulator, a configuration component for modeling the constituent structure of the CIM system, and a timer component in charge of the time advance for the simulation.

• Journal of the Korean Ceramic Society
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• v.52 no.3
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• pp.209-214
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• 2015

Silicon nitride films were deposited at $100^{\circ}C$ by using the catalytic chemical vapor deposition technique. The source gas mixing ratio, $R_N=[NH_3]/[SiH_4]$, was varied from 10 to 30, and the hydrogen dilution ratio, $R_H=[H_2]/[SiH_4]$, was varied from 20 to 100. The breakdown field strength reached a maximum value at $R_N=20$ and $R_H=20$, whereas the resistivity decreased in the same sample. The relative permittivity had a positive correlation with the breakdown field strength. The capacitance-voltage threshold curve showed an asymmetric hysteresis loop, which became more squared as $R_H$ increased. The width of the hysteresis window showed a negative correlation with the slope of the transition region, implying that the combined effect of $R_N$ and $R_H$ overides the interface defects while creating charge storage sites in the bulk region.

• Journal of the Semiconductor & Display Technology
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• v.10 no.1
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• pp.57-61
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• 2011

To develop high efficiency crystalline solar cells, the rear surface passivation is very important. In this paper, $Al_2O_3$ films deposited by thermal ALD(atomic layer deposition) method were studied for rear surface passivation of crystalline solar cells and their passivation properties were evaluated. After the deposition of $Al_2O_3$ films on p-type Si wafers, the lifetime was increased very much due to the reduction of interface state density and the field effects of the negative fixed charge in the films. Also, optimum annealing condition and effects of SiNx capping layer were investigated. The best lifetime was obtained when the films were annealed at $400^{\circ}C$ for 15min. And the lifetime degradation of the $Al_2O_3$ films with SiNx capping layers was improved compared to those without the capping layers.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.1
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• pp.41-47
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• 1998

The (Sr$_1$-\ulcorner.Ca\ulcorner)TiO$_3$(0.05 x 0.2) ceramics were fabricated to form semiconducting ceramics by sintering at about 1350[$^{\circ}C$] in a reducing atmosphere($N_2$gas). After being fired in a reducing atmosphere, metal oxides(CuO) was painted on the both surface of the specimens to diffuse to the grain boundary. The capacitance changes slowly and almost linearly in the temperature region of -40~+85[$^{\circ}C$]. The capacitance characteristics appears a stable value within $\pm$10[%]. According to increase of the frequency as a functional of temperature, all specimens used in this study showed the dielectric relaxation, and the relaxation frequency was above 10\ulcorner[Hz]. The capacitance is almost unchanged below about 20[V] but it decrease slowly over 20[V]. The voltage-current characteristics of specimens observed in the temperature range of 25~125[$^{\circ}C$] as the current increased appears that it is due to space charge condensed to interface between grain and grain boundary.

• Journal of the Korean Electrochemical Society
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• v.8 no.2
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• pp.106-114
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• 2005

This article covers the theoretical ac-impedance models for the analysis of oxygen reduction on the porous cathode electrode f3r solid oxide fuel cell (SOFC). Firstly, ac-impedance models were explained on the basis of the mechanism of oxygen reduction, which were classified into the rate-determining steps; (i) adsorption of oxygen atom on the electrode surface, (ii) diffusion of adsorbed oxygen atom along the electrode surface towards the three-phase (electrode/electrolyte/gas) boundaries, (iii) surface diffusion of adsorbed oxygen atom m ixed with the adsorption reaction of oxygen atom on the electrode surface and (iv) diffusion of oxygen vacancy through the electrode coupled with the charge transfer reaction at the electrode/gas interface. In each section for ac-impedance model, the representative impedance plots and the interpretation of important parameters attributed to the oxygen reduction reaction were explained. Finally, we discussed in detail the applications of the proposed theoretical ac-impedance models to the real electrode of SOFC system.