• International Journal of Aeronautical and Space Sciences
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• v.12 no.2
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• pp.175-178
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• 2011

An optical fiber-based beam width measurement technique is presented. The proposed system can be applied to the optical fiber industry in applications such as lensed fiber, optical fiber based laser beam source, and fiber optic sensor. The measurement system is composed of optical fiber, which is used as a transceiver, and a single grating panel which consists of a multi-reflection area with an even non-reflection area. The grating panel is used to vary the reflected light. When the widths of the reflection area and non-reflection area are larger than the optical beam width, the reflected light is varied at the interface between the reflection area and the non-reflection area by the movement of the grating panel. Experiments were conducted in order to verify the feasibility of the proposed technique. Multi-mode fiber combined with a collimator was selected as an emitter and a receiver, and the beam width measurement system was contrived. Subsequently, the proposed method and the system were verified by comparing the experimental results with the results of the conventional charge-coupled device technique.

• Journal of the Korea Computer Industry Society
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• v.6 no.2
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• pp.279-286
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• 2005

The prefabricated type used generally in Korea to join cable runs on new installations or to repair broken Cable runs on existing installations, because installation is very simple and save time. This type is a permanent, shielded and submersible cable joint for direct burial or vault application. It confirms to the requirements of IEEE std. 404-1993 by factory testing, but many problems of insulated cable systems are caused by internal defects of the joint part which have to be mounted ensile. Faults arise from impurities or voids. A suitable solution for a monitoring of cable joints during the after-laying test and service is partial discharge detection. <중략> $\Phi-q-n$ properties were measured using detection impedance, high pass filter and computerized data acquisition system. Statistic Value like maximum charge, repetition rate, average charge, etc. are calculated. It is possible to quantitative analysis of $\Phi-q-n$ properties from this statistic value and pattern analysis.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.15 no.6
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• pp.1349-1354
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• 2011

In this work, we fabricated the CdZnS/CdTe heterojunction and investigated the C-V characteristics to determine the depletion width and the charge density distribution. A parallel experiment on CdS/CdTe heterojunction was also carried out for comparison. The depletion region width, for CdZnS/CdTe heterojunction, was nearly constant, regardless of bias voltage. However, the depletion region was wider than that of CdS/CdTe heterojunction due to high resistivity of CdZnS film. The interface charge density of CdZnS/CdTe heterojunction was increased linearly with the bias voltage and showed lower values than those for CdS/CdTe junction. The open circuit voltage of CdZnS/CdTe heterojunction solar cells increased with zinc mole ratio due to reducing of the electron affinity difference between CdZnS and CdTe films. However, the increase of series resistance due to the high resistivity of Cd1-xZnxS films results in reducing conversion efficiency.

• Journal of the Korea Computer Industry Society
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• v.3 no.12
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• pp.1651-1658
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• 2002

Recently power cable used generally in Korea, because installation is very simple and it has high stability. It confirms to the requirements of IEEE std. 404-1993 by factory testing, but many problems of insulated cable systems are caused by internal defects of the joint part which have to be mounted ensile. Especially, fault rates are arise from impurities or voids. A suitable solution for a monitoring of power cable during the after-laying test and service is partial discharge detection. The artificial defects between cable joint(EPR) and insulator(XLPE) interface are considered in this research to investigating the partial discharge characteristics. ${\varphi}$-q-n properties were detected using data acquisition system and Maximum charge($q_{max}$), repetition rate(${\={n}$), average charge(${\={q}$), Unbalance rate of ${\={n}$ and ${\={q}$ are calculated in order to analysis partial discharge properties quantitatively from this statistic value.

• Journal of the Korean Institute of Telematics and Electronics
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• v.26 no.5
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• pp.46-51
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• 1989

The degradation phenomena induced by hot-carrier injection was studied from the shift of threshold voltage and subthreshold current curve in LDD NMOSFET degraded under different DC stress-biases. Threshold voltage shift ${Delta}V_{tex}$ defined in saturation region was separated into contri butions due to trapped oxide charge $V_{ot}$ and interface traps ${Delta}V_{it}$ generated from midgap to threshold voltage. Under th positive stress electric field (TEX>$V_g>V_d$) condition, the shift of threshold voltage was attributed to the electrons traped ar gate oxide but subthreshold swing was not negative stress electric field ($V_g) condition, holes seems to be injected positive charges so threshold voltage and subthreshold swing were increased.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.11
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• pp.25-35
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• 2000

A simple two-terminal cyclic current0voltage(I-V) technique was used to measure the current-transients in metal-oxide-semiconductor capacitors. Distinct charging/discharging currents were measured and analyzed as a function of the hold time, the delay time, the gate polarity during the FNT electron injection, the injection fluence and the annealing time after the injection had stopped. The charge-exchange current was distinguished from total current-transients containing the displacement current components. Charging/discharging current caused by the charge exchange was strongly dependent not only on the density of positive charges in the $SiO_2$, but also on the density of interface traps generated during the FNT electron injection. Several tentative mechanisms were suggested.

• JSTS:Journal of Semiconductor Technology and Science
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• v.13 no.6
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• pp.581-588
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• 2013

This paper presents a study of the process temperature dependence of $Al_2O_3$ film grown by thermal atomic layer deposition (ALD) as a passivation layer in the crystalline Si (c-Si) solar cells. The deposition rate of $Al_2O_3$ film maintained almost the same until $250^{\circ}C$, but decreased from $300^{\circ}C$. $Al_2O_3$ film deposited at $250^{\circ}C$ was found to have the highest negative fixed oxide charge density ($Q_f$) due to its O-rich condition and low hydroxyl group (-OH) density. After post-metallization annealing (PMA), $Al_2O_3$ film deposited at $250^{\circ}C$ had the lowest slow and fast interface trap density. Actually, $Al_2O_3$ film deposited at $250^{\circ}C$ showed the best passivation effects, that is, the highest excess carrier lifetime (${\tau}_{PCD}$) and lowest surface recombination velocity ($S_{eff}$) than other conditions. Therefore, $Al_2O_3$ film deposited at $250^{\circ}C$ exhibited excellent chemical and field-effect passivation properties for p-type c-Si solar cells.

• Journal of the Korea Society of Computer and Information
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• v.4 no.4
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• pp.120-125
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• 1999

This paper is a study on the cyber education center, OpenEdu, developing on internet. The conventional cyber university is allowed for ID user only, but OpenEdu is opened all internet user for open education and it has a various content. free of charge and high quality. Also. in this system, we support the various 500 contents, other efficiently services and it is a self-learning(asynchronous) distance education application(HTML, PDF. Front Page) on cyber-space using the information super highway It will make the cyber education center from new paradigm of distance education. The purpose of OPenEdu provides a async. distance education service, free of charge to obtain many various contents on internet. The future study is enhanced user interface and upgraded content quality.

• JSTS:Journal of Semiconductor Technology and Science
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• v.5 no.3
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• pp.159-167
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• 2005

Quantization effects (QEs), which manifests when the device dimensions are comparable to the de Brogile wavelength, are becoming common physical phenomena in the present micro-/nanometer technology era. While most novel devices take advantage of QEs to achieve fast switching speed, miniature size and extremely small power consumption, the mainstream CMOS devices (with the exception of EEPROMs) are generally suffering in performance from these effects. In this paper, an analytical model accounting for the QEs and poly-depletion effects (PDEs) at the silicon (Si)/dielectric interface describing the capacitance-voltage (C-V) and current-voltage (I-V) characteristics of MOS devices with thin oxides is developed. It is also applicable to multi-layer gate-stack structures, since a general procedure is used for calculating the quantum inversion charge density. Using this inversion charge density, device characteristics are obtained. Also solutions for C-V can be quickly obtained without computational burden of solving over a physical grid. We conclude with comparison of the results obtained with our model and those obtained by self-consistent solution of the $Schr{\ddot{o}}dinger$ and Poisson equations and simulations reported previously in the literature. A good agreement was observed between them.

• Journal of the Korean Chemical Society
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• v.40 no.4
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• pp.264-272
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• 1996

Cluster models of the Υ-Al2O3(111) and the Pt(111) surfaces have been used in an atom superposition and electron delocalization molecular orbital study of interfacial bond strengths between them. The reduced extents for Al3+ are due to the ratio of oxygen to aluminum atoms. The greater the reduced extent for Al3+ is, the stronger the binding energy is to Pt atoms in a cluster. The oxygen-covered surfaces of Υ-Al2O3(111) are shown to bind more weakly to Pt atoms, while the binding to the oxygen-covered surface formed under oxidizing conditions of Pt atoms is strong. The interfacial bond of platinum-alumina may be possible by a charge-transfer mechanism from the platinum surface to the partially empty O-2p band and Al3+ dangling surface orbital.