• The Transactions of the Korean Institute of Electrical Engineers C
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• v.54 no.3
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• pp.114-119
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• 2005

We investigated compatibilizing effects of electrical properties such as charge distributions and electrical breakdown in blends of low density polyethylene (LDPE) / polystyrene (PS) with poly [styrene-b-(ethylene-co-butylene)-b-styrene] (SEBS), the triblock copolymer. The blends with $70\;wt\%$ of LDPE and $30\;wt\%$ of PS were prepared through a melt blending in a batch type kneader at a temperature of $220^{\circ}C$ when the SEBS content increased up to $10\;wt\%$. Scanning electron microscopy (SEM) was investigated for observation of morphology of LDPE / PS blends increasing SEBS contents. The morphological observation showed that addition of SEBS results in the domain size reduction of the dispersed PS phase and a better interfacial adhesion between LDPE and PS phases. Measurements of space charge distributions for blends was carried out with pulsed electroacoustic (PEA) method. It was possible to observe that the amount of charge storage in the LDPE / PS blends decreased wiか increasing of SEBS content. The location of SEBS at a domain interface enables charges to move from one phase to the other via domain interface and results in a indicative decrease in the amount of space charge for the LDPE / PS blends with SEBS. Electrical breakdown strength of these blends was observed. It was found that the maximum breakdown strength of the blend was 51.55 kV/mm. These results were better than 38.38 kV/mm of LDPE used electrical insulator for cables and were caused by crystalinity of blends. Because the crystalinity of blends were lower than LDPE, electrical breakdown strength of LDPE / PS blends is higher than that of LDPE. We evaluated the possibility of these blends for insulating material substituted LDPE.

• 제어로봇시스템학회:학술대회논문집
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• 2000.10a
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• pp.101-101
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• 2000

MSC(Multispectral Camera), which will be a unique payload on KOMPSAT-II, is designed to collect panchromatic and multi-spectral imagery with a ground sample distance of 1m and a swath width of 15km at 685km altitude in sun-synchronous orbit. The instrument is designed to have an orbit operation duty cycle of 20% over the mission life time of 3 years. MSC electronics consists of three main subsystems; PMU(Payload Management Unit), CEU(Camera Electronics Unit) and PDTS(Payload Data Transmission Subsystem). PMU performs all the interface between spacecraft and MSC, and manages all the other subsystems by sending commands to them and receiving telemetry from them with software protocol through RS-422 interface. CEU controls FPA(Focal Plane Assembly) which contains TDI(Timc Delay Integration) CCD(Charge Coupled Device) and its clock drivers. PMU provides a Master Clock to synchronize panchromatic and multispectral camera. PDTS performs compression, storage and encryption of image data and transmits them to the ground station through x-band.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.157-158
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• 2007

Effects of post-metallization anneal (PMA) on interface trap characteristics of Si-$SiO_2$ are studied. The conventional PMA method utilizes forming gas anneal, where 10% hydrogen in nitrogen atmosphere is used. A new PMA method utilizes hydrogen rich PECVD- silicon nitride $(SiN_x)$ film as a hydrogen diffusion source and a out-diffusion blocking layer. It can be shown through charge pumping current measurement that the new PMA is indeed effective to decrease Si-$SiO_2$ interface trap density.

• Proceedings of the Korean Society of Propulsion Engineers Conference
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• 2005.11a
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• pp.184-187
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• 2005

Performing thermal transient test on electric initiator with SUS 304 bridgewire(diameter 2.3mil) and $Zr-KClO_4$ primary charge and analysing the test data using Fitted Wire Model shows that the thermal characteristic parameter related to primary charge is changed sharply around $300^{\circ}C$. It is determined that this phenomenon is due to endothermic reaction from phase transition of $KClO_4$, which is used as primary charge, and to physical change of thermal transient interface between bridgewire and primary charge. With this results, useful temperature range for the parameter obtained from thermal transient test can be suggested.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.10
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• pp.665-671
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• 2017

Herein, we report the fabrication of low-voltage N-type organic field-effect transistors by using high capacitance fluorinated polymer gate dielectrics such as P(VDF-TrFE), P(VDF-TrFE-CTFE), and P(VDF-TrFE-CFE). Electron-withdrawing functional groups in PVDF-based polymers typically cause the depletion of negative charge carriers and a high contact resistance in N-channel organic semiconductors. Therefore, we incorporated intermediate layers of a low-k polymerto prevent the formation of a direct interface between PVDF-based gate insulators and the semiconducting active layer. Consequently, electron depletion is inhibited, and the high charge resistance between the semiconductor and source/drain electrodes is remarkably improved by the in corporation of solution-processed charge injection layers.

• Transactions on Electrical and Electronic Materials
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• v.17 no.6
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• pp.380-382
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• 2016

The mechanism for instability under PBS (positive bias stress) in amorphous SIZO (Si-In-Zn-O) thin-film transistors was investigated by analyzing the charge trapping mechanism. It was found that the bulk traps in the SIZO channel layer and the channel/dielectric interfacial traps are not created during the PBS duration. This result suggests that charge trapping in gate dielectric, and/or in oxide semiconductor bulk, and/or at the channel/dielectric interface is a more dominant mechanism than the creation of defects in the SIZO-TFTs.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.11 no.1
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• pp.38-42
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• 2001

Electric and dielectric(Ba,Sr)$TiO_3$[BST] thin films for emtal-Insulator-Semiconductor(MIS) capacitors have been studied. BST thin films wre deposted on p-Si(100) substrates bythe RF magnetron sputtering with tempratue range of 500~$600^{\circ}C$. The dielectric properties of MIS capacitors consisting of Al/BST/$SiO_2$/Si sandwich structure were evaluated ot redcue the leakage current density. The charge state densities of the MIS capacitors were determined by high frequency (1 MHz) C-V measurement. In order to reduce the leakage current in MIS capacitor, high quality $SiO_2$ layer was deposited on bare p-Si substrate. Depending on the oxygen pressure and substrate temperature both positive and negative polarities of effective oxide charge in the MIS capacitors were evaluated. It is considered that the density of electronic states, generated at the BST/$SiO_2$/p-Si interface due to the asymmetric structure within BST/$SiO_2$/Si structure, and the oxygen vacancy content has influence on the behavior of oxide charge.

• Electronic Materials Letters
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• v.14 no.6
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• pp.657-668
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• 2018

Organic-inorganic hybrid lead halide perovskites have been extensively investigated for various optoelectronic applications. Particularly, owing to their ability to form highly crystalline and homogeneous films utilizing low-temperature solution processes (< $150^{\circ}C$), perovskites have become promising photoactive materials for realizing high-performance flexible solar cells. However, the current use of mesoporous $TiO_2$ scaff olds, which require high-temperature sintering processes (> $400^{\circ}C$), has limited the fabrication of perovskite solar cells on flexible substrates. Therefore, the development of a low-temperature processable charge-transporting layer has emerged as an urgent task for achieving flexible perovskite solar cells. This review summarizes the recent progress in low-temperature processable electron- and hole-transporting layer materials, which contribute to improved device performance in flexible perovskite solar cells.

• Journal of the Semiconductor & Display Technology
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• v.16 no.3
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• pp.59-64
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• 2017

As the demand on displays increases, new thin-film transistors such as metal oxide transistor are continuously being invented. When designing a circuit consisting of such new transistors, a new transistor model based on proper charge transport mechanisms is needed for each of them. In this paper, a modeling framework which enables to choose charge transport mechanisms that are limited to certain operation regions and assemble them into a transistor model instead of making an integrated transistor model dedicated to each transistor. The framework consists of a graphic user interface to choose charge transport models and a current calculation part, which is also implemented in AIM-SPICE for circuit simulation.

• Applied Science and Convergence Technology
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• v.23 no.6
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• pp.351-356
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• 2014

The electronic structure at organic-organic interface gives essential information on device performance such as charge transport and mobility. Especially, the molecular orientation of organic material can affect the electronic structure at interface and ultimately the device performance in organic photovoltaics. The molecular orientation is examined by the change in ionization potential (IP) for metal phthalocyanines (MPc, M=Zn, Cu)/fullerene ($C_{60}$) interfaces on ITO by adding the CuI templating layer through ultraviolet photoelectron spectroscopy measurement. On CuPc/$C_{60}$ bilayer, the addition of CuI templating layer represents the noticeable change in IP, while it hardly affects the electronic structure of ZnPc/$C_{60}$ bilayer. The CuPc molecules on CuI represent relatively lying down orientation with intermolecular ${\pi}-{\pi}$ overlap being aligned in vertical direction. Consequently, in organic photovoltaics consisting of CuPc and $C_{60}$ as donor and acceptor, respectively, the carrier transport along the direction is enhanced by the insertion of CuI templaing layer. In addition, optical absorption in CuPc molecules is increased due to aligned transition matrix elements. Overall the lying down orientation of CuPc on CuI will improve photovoltaic efficiency.