• Title/Summary/Keyword: interconnect

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Fabrication and Characterization of Cr Alloy for Metallic Interconnect of Solid Oxide Fuel Cell (고체 산화물 연료전지용 Cr계 금속 연결재 제조 및 특성 연구)

  • Song, Rak-Hyun
    • Journal of Hydrogen and New Energy
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    • v.16 no.1
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    • pp.58-65
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    • 2005
  • The $LaCrO_3$-dispersed Cr alloys for metallic interconnect of solid oxide fuel cell were prepared as a function of $LaCrO_3$ content in the range of 5 to 25 vol.% and were sintered at 1500$^{\circ}C$ under an Ar atmosphere with 5 vol.% $H_2$. The sintering and oxidation behaviors of these alloys were examined. The alloys indicated a good sinterability above 95% relative density at a given sintering condition, and their sintering densities is independent on $LaCrO_3$ content. The $LaCrO_3$ particles of the sintered alloys were concentrated on interfaces of Cr particles, and the size of the Cr particles increased with decreasing $LaCrO_3$ content, which is caused by inhibited grain growth of Cr particle by $LaCrO_3$ particle. The oxidation test showed all $LaCrO_3$-dispersed Cr alloys have good oxidation resistance as compared with pure Cr, which is attributed to presence of $LaCrO_3$ at the interface at which the oxidation reaction occurs rapidly. The Cr alloys with about 15 vol.% $LaCrO_3$ are very resistant to oxidation.

Stretchable Deformation-Resistance Characteristics of Metal Thin Films for Stretchable Interconnect Applications I. Effects of a Parylene F Intermediate Layer and PDMS Substrate Swelling (신축 전자패키지 배선용 금속박막의 신축변형-저항 특성 I. Parylene F 중간층 및 PDMS 기판의 Swelling에 의한 영향)

  • Park, Donghyun;Oh, Tae Sung
    • Journal of the Microelectronics and Packaging Society
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    • v.24 no.3
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    • pp.27-34
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    • 2017
  • We investigated the feasibility of parylene F usage as an intermediate layer between a polydimethylsiloxane (PDMS) substrate and an Au thin-film interconnect as well as the swelling effect of PDMS substrate on the stretchable deformability of an Au thin film. The 150-nm-thick Au film, which was sputtered on a PDMS substrate without a parylene F layer, exhibited an initial resistance of $11.7{\Omega}$ and an overflow of its resistance at a tensile strain of 12.5%. On the other hand, the Au film, which was formed with a 150-nm-thick parylene F layer, revealed an much improved resistance characteristics: $1.21{\Omega}$ as its initial resistance and $246{\Omega}$ at its 30% elongation state. With swelling of PDMS substrate, the resistance of an Au film substantially decreased to $14.4{\Omega}$ at 30% tensile strain.

용액공정을 이용한 SiOC/SiO2 박막제조

  • Kim, Yeong-Hui;Kim, Su-Ryong;Gwon, U-Taek;Lee, Jeong-Hyeon;Yu, Yong-Hyeon;Kim, Hyeong-Sun
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2009.11a
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    • pp.36.2-36.2
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    • 2009
  • Low dielectric materials have been great attention in the semiconductor industry to develop high performance interlayer dielectrics with low k for Cu interconnect technology. In our study, the dielectric properties of SiOC /SiO2 thin film derived from polyphenylcarbosilane were investigated as a potential interlayer dielectrics for Cu interconnect technology. Polyphenylcarbosilane was synthesized from thermal rearrangement of polymethylphenylsilane around $350^{\circ}C{\sim}430^{\circ}C$. Characterization of synthesized polyphenylcarbosilane was performed with 29Si, 13C, 1H NMR, FT-IR, TG, XRD, GPC and GC analysis. From FT-IR data, the band at 1035 cm-1 is very strong and assigned to CH2 bending vibration in Si-CH2-Si group, indicating the formation of the polyphenylcarbosilane. Number average of molecular weight (Mn) of the polyphenylcarbosilane synthesized at $400^{\circ}C$ for 6hwas 2, 500 and is easily soluble in organic solvent. SiOC/SiO2 thin film was fabricated on ton-type silicon wafer by spin coating using 30wt % polyphenylcarbosilane incyclohexane. Curing of the film was performed in the air up to $400^{\circ}C$ for 2h. The thickness of the film is ranged from $1{\mu}m$ to $1.7{\mu}m$. The dielectric constant was determined from the capacitance data obtained from metal/polyphenylcarbosilane/conductive Si MIM capacitors and show a dielectric constant as low as 2.5 without added porosity. The SiOC /SiO2 thin film derived from polyphenylcarbosilane shows promising application as an interlayer dielectrics for Cu interconnect technology.

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