• 제목/요약/키워드: interconnect

검색결과 564건 처리시간 0.054초

고체 산화물 연료전지용 Cr계 금속 연결재 제조 및 특성 연구 (Fabrication and Characterization of Cr Alloy for Metallic Interconnect of Solid Oxide Fuel Cell)

  • 송락현
    • 한국수소및신에너지학회논문집
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    • 제16권1호
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    • pp.58-65
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    • 2005

  • The $LaCrO_3$-dispersed Cr alloys for metallic interconnect of solid oxide fuel cell were prepared as a function of $LaCrO_3$ content in the range of 5 to 25 vol.% and were sintered at 1500$^{\circ}C$ under an Ar atmosphere with 5 vol.% $H_2$. The sintering and oxidation behaviors of these alloys were examined. The alloys indicated a good sinterability above 95% relative density at a given sintering condition, and their sintering densities is independent on $LaCrO_3$ content. The $LaCrO_3$ particles of the sintered alloys were concentrated on interfaces of Cr particles, and the size of the Cr particles increased with decreasing $LaCrO_3$ content, which is caused by inhibited grain growth of Cr particle by $LaCrO_3$ particle. The oxidation test showed all $LaCrO_3$-dispersed Cr alloys have good oxidation resistance as compared with pure Cr, which is attributed to presence of $LaCrO_3$ at the interface at which the oxidation reaction occurs rapidly. The Cr alloys with about 15 vol.% $LaCrO_3$ are very resistant to oxidation.

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신축 전자패키지 배선용 금속박막의 신축변형-저항 특성 I. Parylene F 중간층 및 PDMS 기판의 Swelling에 의한 영향 (Stretchable Deformation-Resistance Characteristics of Metal Thin Films for Stretchable Interconnect Applications I. Effects of a Parylene F Intermediate Layer and PDMS Substrate Swelling)

  • 박동현;오태성
    • 마이크로전자및패키징학회지
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    • 제24권3호
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    • pp.27-34
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    • 2017

  • Polydimethylsiloxane (PDMS) 신축기판과 Au 박막 사이의 중간층으로서 parylene F의 적용 가능성을 분석하고, Au 박막의 스퍼터링 중에 발생하는 PDMS 기판의 swelling이 Au 박막의 신축변형-저항 특성에 미치는 영향을 분석하였다. Parylene F 중간층 없이 PDMS 기판에 스퍼터링한 150 nm 두께의 Au 박막은 $11.7{\Omega}$의 초기저항을 나타내었으며, 12.5%의 인장변형률에서 저항의 overflow가 발생하였다. 반면에 150 nm 두께의 parylene F 중간층을 갖는 Au 박막의 초기저항은 $1.21{\Omega}$이었으며 30% 인장변형률에서 저항이 $246{\Omega}$으로 저항증가비가 현저히 낮아졌다. PDMS 기판의 swelling이 발생함에 따라 30% 인장변형률에서 Au 박막의 저항이 $14.4{\Omega}$으로 크게 저하되었다.

  • https://doi.org/10.6117/kmeps.2017.24.3.027 인용 PDF KSCI

용액공정을 이용한 SiOC/SiO2 박막제조

  • 김영희;김수룡;권우택;이정현;유용현;김형순
    • 한국재료학회:학술대회논문집
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    • 한국재료학회 2009년도 추계학술발표대회
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    • pp.36.2-36.2
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    • 2009

  • Low dielectric materials have been great attention in the semiconductor industry to develop high performance interlayer dielectrics with low k for Cu interconnect technology. In our study, the dielectric properties of SiOC /SiO2 thin film derived from polyphenylcarbosilane were investigated as a potential interlayer dielectrics for Cu interconnect technology. Polyphenylcarbosilane was synthesized from thermal rearrangement of polymethylphenylsilane around $350^{\circ}C{\sim}430^{\circ}C$. Characterization of synthesized polyphenylcarbosilane was performed with 29Si, 13C, 1H NMR, FT-IR, TG, XRD, GPC and GC analysis. From FT-IR data, the band at 1035 cm-1 is very strong and assigned to CH2 bending vibration in Si-CH2-Si group, indicating the formation of the polyphenylcarbosilane. Number average of molecular weight (Mn) of the polyphenylcarbosilane synthesized at $400^{\circ}C$ for 6hwas 2, 500 and is easily soluble in organic solvent. SiOC/SiO2 thin film was fabricated on ton-type silicon wafer by spin coating using 30wt % polyphenylcarbosilane incyclohexane. Curing of the film was performed in the air up to $400^{\circ}C$ for 2h. The thickness of the film is ranged from $1{\mu}m$ to $1.7{\mu}m$. The dielectric constant was determined from the capacitance data obtained from metal/polyphenylcarbosilane/conductive Si MIM capacitors and show a dielectric constant as low as 2.5 without added porosity. The SiOC /SiO2 thin film derived from polyphenylcarbosilane shows promising application as an interlayer dielectrics for Cu interconnect technology.

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