• JSTS:Journal of Semiconductor Technology and Science
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• 제16권3호
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• pp.339-345
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• 2016

This paper presents a two-stage power amplifier MMIC using a $0.4{\mu}m$ GaN-HEMT process. The two-stage structure provides high gain and compact circuit size using an integrated inter-stage matching network. The size and loss of the inter-stage matching network can be reduced by including bond wires as part of the matching network. The two-stage power amplifier MMIC was fabricated with a chip size of $2.0{\times}1.9mm^2$ and was mounted on a $4{\times}4$ QFN carrier for evaluation. Using a downlink LTE signal with a PAPR of 6.5 dB and a channel bandwidth of 10 MHz for the 2.6 GHz band, the power amplifier MMIC exhibited a gain of 30 dB, a drain efficiency of 32%, and an ACLR of -31.4 dBc at an average output power of 36 dBm. Using two power amplifier MMICs for the carrier and peaking amplifiers, a Doherty power amplifier was designed and implemented. At a 6 dB back-off output power level of 39 dBm, a gain of 24.7 dB and a drain efficiency of 43.5% were achieved.

• 전기전자학회논문지
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• 제26권3호
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• pp.456-461
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• 2022

본 논문에서는 차동 증폭기에 필수적으로 필요한 Radio frequency(RF) transformer(TF)을 활용하여 광대역 이득 특성을 가지는 2단 단일 종단 전력증폭기를 제시하였다. RF TF의 특징을 파악하고 광대역 특성을 가지도록 설계한 뒤 2단 전력증폭기의 단간(inter-stage) 임피던스 정합 회로에 적용함으로써 증폭기의 대역폭을 향상시킬 수 있다. 기존의 2단 단일 종단(Single-ended) 증폭기의 성능과 면적을 유지하면서 광대역 이득 특성을 얻을 수 있도록 단간 정합 회로를 Monolithic Microwave Integrated Circuit (MMIC)와 다층 PCB에 구현하고 시뮬레이션을 통해 결과를 비교하였다. InGaP/GaAs HBT 모델을 사용하여 설계한 2단 전력증폭기 모듈을 시뮬레이션 한 결과 중심주파수 3.3GHz에서 기존의 전력증폭기가 11.2%의 fractional 대역폭을 보인 반면 제안된 설계 기법을 적용한 전력증폭기는 19.8%의 개선된 대역폭을 가짐을 확인하였다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제16권5호
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• pp.687-694
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• 2016

A differential power amplifier operating at millimeter-wave frequencies is demonstrated using a 65-nm CMOS technology. All of the input, output, and inter-stage network are implemented by transformers only, enabling impedance matching with low loss and a wide bandwidth. The millimeter-wave power amplifier exhibits measured small-signal gain exceeding 12.6 dB over a 3-dB bandwidth from 45 to 56 GHz. The output power and PAE are 13 dBm and 11.7%, respectively at 50 GHz.

• 한국전자파학회논문지
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• 제27권1호
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• pp.20-26
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• 2016

본 논문에서는 GaN-HEMT를 이용하여 X-대역에서 동작하는 이단으로 구성된 전력증폭기를 설계 및 제작하였다. 높은 전력 이득을 얻기 위해 간단한 구조의 중간 단 정합 네트워크를 통해 이단으로 구성하였다. 3D EM 시뮬레이션을 통하여 본드와이어 인덕턴스와 기생 캐패시턴스를 예측하였다. 본드와이어 인덕턴스를 줄임으로써 정합 네트워크의 Q(quality-factor)를 최소화하여 대역 특성을 향상시켰다. 제작된 전력증폭기는 40 V의 동작 전압을 인가하였으며, 8.1~8.5 GHz에서 16 dB 이상의 전력 이득, 42.5 dBm 이상의 출력 전력, 35 % 이상의 효율 특성을 나타냈다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제8권4호
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• pp.289-294
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• 2008

A 77 GHz 3-stage low noise amplifier (LNA) employing one common source and two cascode stages is developed using $0.13{\mu}m$ CMOS process. To compensate for the low gain which is caused by lossy silicon substrate and parasitic element of CMOS transistor, positive feedback technique using parasitic inductance of bypass capacitor is adopted to cascode stages. The developed LNA shows gain of 7.2 dB, Sl1 of -16.5 dB and S22 of -19.8 dB at 77 GHz. The return loss bandwidth of LNA is 71.6 to 80.9 GHz (12%). The die size is as small as $0.7mm\times0.8mm$ by using bias line as inter-stage matching networks. This LNA shows possibility of 77 GHz automotive RADAR system using $0.13{\mu}m$ CMOS process, which has advantage in cost compared to sub-100 nm CMOS process.

• JSTS:Journal of Semiconductor Technology and Science
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• 제7권2호
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• pp.98-101
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• 2007

A fully integrated 5-GHz CMOS power amplifier for IEEE 802.11a WLAN applications is implemented using $0.18-{\mu}m$ CMOS technology. An on-chip transmission-line transformer is used for output matching network and voltage combining. Input balun, inter-stage matching components, output transmission line transformer and RF chokes are fully integrated in the designed amplifier so that no external components are required. The power amplifier occupies a total area of $1.7mm{\times}1.2mm$. At a 3.3-V supply voltage, the amplifier exhibits a 22.6-dBm output 1-dB compression point, 23.8-dBm saturated output power, 25-dB power gain. The measured power added efficiency (PAE) is 20.1 % at max. peak, 18.8% at P1dB. When 54 Mbps/64 QAM OFDM signal is applied, the PA delivers 12dBm of average power at the EVM of -25dB.