• Journal of the Institute of Electronics Engineers of Korea SD
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• v.42 no.9 s.339
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• pp.9-18
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• 2005

To make high-performance, low-power transistors beyond the technology node of 60 nm complementary metal-oxide-semiconductor field-effect transistors(C-MOSFETs) possible, the effect of electron mobility of the thickness of strained Si grown on a relaxed SiGe/SiO2/Si was investigated from the viewpoint of mobility enhancement via two approaches. First the parameters for the inter-valley phonon scattering model were optimized. Second, theoretical calculation of the electronic states of the two-fold and four-fold valleys in the strained Si inversion layer were performed, including such characteristics as the energy band diagrams, electron populations, electron concentrations, phonon scattering rate, and phonon-limited electron mobility. The electron mobility in an silicon germanium on insulator(SGOI) n-MOSFET was observed to be about 1.5 to 1.7 times higher than that of a conventional silicon on insulator(SOI) n-MOSFET over the whole range of Si thickness in the SOI structure. This trend was good consistent with our experimental results. In Particular, it was observed that when the strained Si thickness was decreased below 10 nm, the phonon-limited electron mobility in an SGOI n-MOSFT with a Si channel thickness of less than 6 nm differed significantly from that of the conventional SOI n-MOSFET. It can be attributed this difference that some electrons in the strained SGOI n-MOSFET inversion layer tunnelled into the SiGe layer, whereas carrier confinement occurred in the conventional SOI n-MOSFET. In addition, we confirmed that in the Si thickness range of from 10 nm to 3 nm the Phonon-limited electron mobility in an SGOI n-MOSFET was governed by the inter-valley Phonon scattering rate. This result indicates that a fully depleted C-MOSFET with a channel length of less than 15 m should be fabricated on an strained Si SGOI structure in order to obtain a higher drain current.

• Ocean Science Journal
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• v.42 no.4
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• pp.241-246
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• 2007

Northern Arabian Sea (NAS) between $17^{\circ}N-20.5^{\circ}N$ and $59^{\circ}E-69^{\circ}E$ was observed by using Argo float daily data fur about 9 months, from April 2002 through December 2002. Results showed that during April - May mixed layer shoaled due to light winds, clear sky and intense solar insolation. Sea surface temperature (SST) rose by $2.3^{\circ}C$ and ocean gained an average of 99.8 $Wm^{-2}$. Mixed layer reached maximum depth of about 71 m during June - September owing to strong winds and cloudy skies. Ocean gained abnormally low $\sim18Wm^{-2}$ and SST dropped by $3.4^{\circ}C$. During the inter monsoon period, October, mixed layer shoaled and maintained a depth of 20 to 30 m. November - December was accompanied by moderate winds, dropping of SST by $1.5^{\circ}C$ and ocean lost an average of 52.5 $Wm^{-2}$. Mixed layer deepened gradually reaching a maximum of 62 m in December. Analysis of surface fluxes and winds suggested that winds and fluxes are the dominating factors causing deepening of mixed layer during summer and winter monsoon periods respectively. Relatively big]h correlation between MLD, net heat flux and wind speed revealed that short term variability of MLD coincided well with short term variability of surface forcing.

• IEIE Transactions on Smart Processing and Computing
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• v.2 no.6
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• pp.345-349
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• 2013

This paper proposes a simplified generalized residual prediction (GRP) that reduces the computational complexity of spatial scalability in scalable high efficiency video coding (SHVC). GRP is a coding tool to improve the inter prediction by adding a residual signal to the inter predictor. The residual signal was created by carrying out motion compensation (MC) of both the enhancement layer (EL) and up-sampled reference layer (RL) with the motion vector (MV) of the EL. In the MC process, interpolation of the EL and the up-sampled RL are required when the MV of the EL has sub-pel accuracy. Because the up-sampled RL has few high frequency components, interpolation of the up-sampled RL does not give significantly new information. Therefore, the proposed method reduces the computational complexity of the GRP by skipping the interpolation of the up-sampled RL. The experiment on SHVC software (SHM-2.0) showed that the proposed method reduces the decoding time by 10 % compared to conventional GRP. The BD-rate loss of the proposed method was as low as 1.0% on the top of SHM-2.0.

• Journal of KIISE:Computing Practices and Letters
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• v.15 no.4
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• pp.280-283
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• 2009

To improve coding performance of scalable video coding which is an emerging video coding standard as an extension of H.264/AVC, SVC uses not only intra prediction and inter prediction but inter-layer prediction. This causes a problem that computational complexity is increased. In this paper, we propose an efficient intra prediction mode decision method in spatial enhancement layer to reduce the computational complexity. The proposed method selects Inra_BL mode using RD cost of Intra_BL in advance. After that, intra mode is decided by only comparing DC modes. Experimental results show that the proposed method reduces 59% of the computation complexity of intra prediction coding, while the degradation in video quality is negligible.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2018.05a
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• pp.173-174
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• 2018

This paper compared the electrical coupling of the monolithic 3D inverter consisting of MOSFET and JLFET. In the case of both the MOSFET and the JLFET, MOSFET and JLFET have a small threshold voltage variation when the thickness of inter-layer dielectric (ILD) = 100 nm. However, when the thickness of ILD = 10 nm, the threshold voltage variation is larger and the JLFET is twice as much as the MOSFET.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.5 no.2
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• pp.122-128
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• 1995

Sintered bodies were prepared from ${\alpha} - Al_2O_3/SiO_2$ composite powders which each alumina particles were surrounded by silica particles and investigated the mullitization behavior on the process of reaction - sintering. Mullitized reaction was started by formation of amorphous aluminosilicate inter - layer and proceeded by diffusion of alumina through this inter-layer. The growth of mullite was happened along the surface of alumina and controlled by the rate of diffusion.

• Proceedings of the KOSOMBE Conference
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• v.1997 no.11
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• pp.146-149
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• 1997

Computerized densitometry was developed or the quantitative measurement of diffuse retinal nerve fiber layer (RNFL) atrophy and intra- and inter-operator reliability and clinical validity of this system were evaluated. Vertical diameter, center of the optic disc, and peripapillary circles which had radii of 1.5 and 2.5 times that of the optic disc were user-interactively determined in digitized RNFL photograph and density profile along each circle was measured and normalized. The areas under the normalized density profiles of the superior and the inferior segments in both circle were used or the study of RNFL. To determine the variability and correspondence in the measurements of density variations, 21 RNFL photographs of glaucoma patients which showed varying degrees of atrophy underwent computerized densitometry by two operators on two separate occasions. Coefficient of variation in the densitometric measurements was $1.2{\sim}5.4%$. Intra- and inter-operator reliabilities were excellent. The correlations between the densitometric values and mean deviations of Humphrey C30-2 visual field showed statistical significance. Computerized densitometry of RNFL photographs was useful in the objective and quantitative assessment of diffuse RNFL atrophy.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2017.05a
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• pp.529-530
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• 2017

Electrical coupling of monolithic 3D inverter(M3D-INV) consisting of Junctionless FET(JLFET) was investigated. Depending on the thickness of Inter Layer Dielectirc (ILD) between top and bottom JLFETs, $N_{gate}-N_{gate}$ capacitance and transconductance $g_m$ are changed by the gate voltage of bottom JLFET. Therefore, when using a stacked structure with the ILD below tens nm, AC electrical coupling between two transistors in M3D-INV should be considered.

• Journal of Broadcast Engineering
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• v.13 no.1
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• pp.119-127
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• 2008

Transmission of video over Internet or wireless network requires coded stream capable of adapting to dynamic network conditions instantly. To meet this requirement, various scalable video coding schemes have been developed, among which the Scalable Video Coding (SVC) extension of the H.264/AVC is the most recent one. In comparison with the scalable profiles of previous video coding standards, the SVC achieves significant improvement on coding efficiency performance. For adapting to dynamic network bandwidth, the SVC employs inter-layer switching between different temporal, spatial or/and fidelity layers, which is currently supported with instantaneous decoding refresh (IDR) access unit. However, for real-time adaptability, the SVC has to frequently employ the IDR picture, which dramatically decreases the coding efficiency. Therefore, an extension of SP picture from the AVC to the SVC for an efficient inter-layer switching is investigated and presented in this paper. Simulations regarding the adaptability to dynamic network bandwidth are implemented. Results of experiment show that the SP picture added SVC provides an average 1.2 dB PSNR enhancement over the current SVC while providing similar adaptive functionality.

• Korean Journal of Materials Research
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• v.31 no.11
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• pp.635-641
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• 2021

Cr thin films with O added are deposited on sapphire substrate by DC sputtering and are nitrided in NH₃ atmosphere between 300 and 900 ℃ for various times. X-ray diffraction results show that nitridation begins at 500 ℃, forming CrN and Cr₂N. Cr oxides of Cr₂O₃ are formed at 600 ℃. And, at temperatures higher than 900 ℃, the intermediate materials of Cr₂N and Cr₂O₃ disappear and CrN is dominant. The atomic concentration ratios of Cr and O are 77% and 23%, respectively, over the entire thickness of as-deposited Cr thin film. In the sample nitrided at 600 ℃, a CrN layer in which O is substituted with N is formed from the surface to 90 nm, and the concentrations of Cr and N in the layer are 60% and 40%, respectively. For this reason, CrN and Cr₂N are distributed in the CrN region, where O is substituted with N by nitridation, and Cr oxynitrides are formed in the region below this. The nitridation process is controlled by inter-diffusion of O and N and the parabolic growth law, with activation energy of 0.69 eV.